Abstract: A method of monitoring a fluid includes: applying the fluid from within a nozzle to a surface of a wafer outside of the nozzle; emitting light, by a light source, from the nozzle to the surface; receiving light reflected from the surface by a light sensor and causing the reflected light to propagate into the nozzle; and determining whether a variation of the fluid occurs according to the reflected light.

Abstract: A nozzle for emitting a fluid comprises a channel, a light source and a light sensor. The channel is configured to flow the fluid. The light source is configured to emit light towards a surface on which the fluid is applied and the light sensor is configured to receive reflected light from the surface.

Abstract: A method includes disposing a semiconductor substrate over a chuck. The chuck has a plurality of holes therein. The semiconductor substrate has a first surface facing the chuck and a second surface opposite thereto. A liquid layer is formed flowing over a top surface of the chuck by supplying liquid to the top surface of the chuck through the holes of the chuck. The semiconductor substrate is moved toward the chuck such that the first surface of the semiconductor substrate is in contact with the liquid layer and the liquid layer flows between the first surface of the semiconductor substrate and the top surface of the chuck.

Abstract: An apparatus of processing a semiconductor substrate include a chuck, a holder, a liquid supplying system and a positive pressure unit. The chuck has a principal surface and at least a hole formed thereon. The holder is capable of holding a semiconductor substrate at a position above the principal surface. The liquid supplying system is configured to provide a liquid film onto the principal surface through the hole. The positive pressure unit is configured for providing a gas flow to a space over the chuck. A method of processing a semiconductor substrate is disclosed herein as well.

Abstract: An apparatus of processing a semiconductor substrate include a chuck, a holder, a liquid supplying system and a positive pressure unit. The chuck has a principal surface and at least a hole formed thereon. The holder is capable of holding a semiconductor substrate at a position above the principal surface. The liquid supplying system is configured to provide a liquid film onto the principal surface through the hole. The positive pressure unit is configured for providing a gas flow to a space over the chuck. A method of processing a semiconductor substrate is disclosed herein as well.

Abstract: A method for forming patterns includes the following steps. A first layout including a first target pattern and a first unprintable dummy pattern is provided. A second layout including a second target pattern and a second printable dummy pattern are provided, wherein at least part of the second printable dummy pattern overlaps the first unprintable dummy pattern exposure limit, such that the second printable dummy pattern cannot be formed in a wafer.

Abstract: A photomask including first opaque patterns and second opaque patterns is provided. The first opaque patterns are distributed in a first plane defined in the photomask, while the second opaque patterns are disposed above the first opaque patterns and spaced apart from the first opaque patterns. In other words, the first opaque pattern and second opaque pattern are not distributed in the same plane.

Abstract: A method for forming a photo-mask is provided. A first photo-mask pattern relating to a first line, an original second photo-mask pattern relating to a first via plug, and a third photo-mask pattern relating to a second line are provided. A first optical proximity correction (OPC) process is performed. A second OPC process is performed, comprising enlarging a width of the second photo-mask pattern along the first direction to form a revised second photo-resist pattern. A contour simulation process is performed to make sure the revised second photo-mask pattern is larger or equal to the original second-mask pattern. The first photo-mask pattern, the revised second photo-mask pattern, and the third photo-mask pattern are output. The present invention further provides an OPC method.

Abstract: A nozzle for emitting a fluid comprises a channel, a light source and a light sensor. The channel is configured to flow the fluid. The light source is configured to emit light towards a surface on which the fluid is applied and the light sensor is configured to receive reflected light from the surface.

Abstract: A photomask including first opaque patterns and second opaque patterns is provided. The first opaque patterns are distributed in a first plane defined in the photomask, while the second opaque patterns are disposed above the first opaque patterns and spaced apart from the first opaque patterns. In other words, the first opaque pattern and second opaque pattern are not distributed in the same plane.

Abstract: A method for forming a photo-mask is provided. A first photo-mask pattern relating to a first line, an original second photo-mask pattern relating to a first via plug, and a third photo-mask pattern relating to a second line are provided. A first optical proximity correction (OPC) process is performed. A second OPC process is performed, comprising enlarging a width of the second photo-mask pattern along the first direction to form a revised second photo-resist pattern. A contour simulation process is performed to make sure the revised second photo-mask pattern is larger or equal to the original second-mask pattern. The first photo-mask pattern, the revised second photo-mask pattern, and the third photo-mask pattern are output. The present invention further provides an OPC method.

Abstract: A calculation method for generating a layout pattern in a photomask includes at least the following steps. A two-dimensional design layout including several geometric patterns distributed in a plane is provided to a computer system. The computer system is used to mark portions of the geometric patterns and generate at least one marked geometric pattern and at least one non-marked geometric pattern. The marked geometric pattern is then simulated and corrected by the computer system so as to generate a 3-D design layout. Through the simulation and correction, the marked geometric pattern and the non-marked geometric pattern are arranged alternately along an axis orthogonal to the plane. The 3-D design layout is outputted to a mask-making system afterwards.

Abstract: A method for forming patterns includes the following steps. A first layout including a first target pattern and a first unprintable dummy pattern is provided. A second layout including a second target pattern and a second printable dummy pattern are provided, wherein at least part of the second printable dummy pattern overlaps the first unprintable dummy pattern exposure limit, such that the second printable dummy pattern cannot be formed in a wafer.

Abstract: A method for forming photomasks includes the following steps. A first photomask including a first target pattern and a first unprintable dummy pattern is provided. A second photomask including a second target pattern and a second printable dummy pattern are provided, wherein at least part of the second printable dummy pattern overlapping the first unprintable dummy pattern exposure limit, such that the second printable dummy pattern can not be printed in a wafer.

Abstract: An alignment accuracy (AA) mark is described, including N (N?3) pattern sets defined by N exposure steps respectively. The N exposure steps are performed also to a device area disposed on a wafer together with the AA mark. The i-th (i=1, 2 . . . N?1) pattern set surrounds the (i+1)-th pattern set. Each pattern set includes a 1st set of x-directional linear patterns, a 2nd set of x-directional linear patterns arranged opposite to the 1st set of x-directional linear patterns in the y-direction, a 1st set of y-directional linear patterns, and a 2nd set of y-directional linear patterns arranged opposite to the 1st set of y-directional linear patterns in the x-direction, wherein each set of x- or y-directional linear patterns include at least three separate parallel linear patterns.

Abstract: A method for forming photomasks includes the following steps. A first photomask including a first target pattern and a first unprintable dummy pattern is provided. A second photomask including a second target pattern and a second printable dummy pattern are provided, wherein at least part of the second printable dummy pattern overlapping the first unprintable dummy pattern exposure limit, such that the second printable dummy pattern can not be printed in a wafer.

Abstract: An alignment accuracy (AA) mark is described, including N (N?3) pattern sets defined by N exposure steps respectively. The N exposure steps are performed also to a device area disposed on a wafer together with the AA mark. The i-th (i=1, 2 . . . N?1) pattern set surrounds the (i+1)-th pattern set. Each pattern set includes a 1st set of x-directional linear patterns, a 2nd set of x-directional linear patterns arranged opposite to the 1st set of x-directional linear patterns in the y-direction, a 1st set of y-directional linear patterns, and a 2nd set of y-directional linear patterns arranged opposite to the 1st set of y-directional linear patterns in the x-direction, wherein each set of x- or y-directional linear patterns include at least three separate parallel linear patterns.