Abstract: The present invention has an object to provide a photosensitive resin composition for optical waveguide formation, which has low transmission loss and can form a waveguide pattern with high shape accuracy at low cost; an optical waveguide; and a method for producing an optical waveguide. The present invention provides a photosensitive resin composition for optical waveguide formation comprising at least: a polymer containing at least a (meth)acrylate structure unit having an epoxy structure, and a (meth)acrylate structure unit having a lactone structure and/or a vinyl monomer structure unit having an aromatic structure; and a photoacid generator, of which one or both of a core layer and a cladding layer are formed of a cured product.

Abstract: There are here disclosed a photoresist material for lithography using a light of 220 nm or less which comprises at least a polymer represented by the following formula (2) and a photo-acid generator for generating an acid by exposure: wherein R1, R2, R3 and R5 are each a hydrogen atom or a methyl group; R4 is an acid-labile group, an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has an acid labile group, an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has a carboxyl group, or a hydrocarbon group having 3 to 13 carbon atoms, which has an epoxy group; R6 is a hydrogen atom, a hydrocarbon group having 1 to 12 carbon atoms, or an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has a carboxyl group; x, y and z are optional values which meet x+y+z=1, 0<x?1, 0?y<1 and 0?z<1; and a weight-average molecular weight of the polymer is in the range of 2000 to 200000, and a resin having a (meth)acrylate unit of an alicyclic lactone structure represented by the

Abstract: A noble alicyclic unsaturated compound represented by the general formula (1): wherein at least one of R1 and R2 is a fluorine atom or a fluorinated alkyl group; a polymer formed by the polymerization of a polymer precursor comprising the alicyclic compound. The polymer is useful, in the lithography using a light having a wavelength of 190 nm or less, as a chemically amplified resist which exhibits excellent transparency with respect to the light for use in exposure and also is excellent in the adhesion to a substrate and the resistance to dry etching.

Abstract: There is disclosed a photosensitive resin composition for interlayer insulating films, surface protection films or the like, which exhibits excellent resolution and can be developed with an aqueous alkaline solution. The photosensitive resin composition is prepared using a polymer at least having a constitutional repeating unit represented by general formula II: wherein R1 represents hydrogen atom or methyl group; R2 to R9 independently represent hydrogen atom, halogen atom or alkyl group having 1 to 4 carbon atoms; X represents —CH?N—, —CONH—, —(CH2)n—CH?N— or —(CH2)n—CONH— and the N atom in X is bonded to a carbon atom in the benzene ring having AO— at an o-position; A represents hydrogen atom or a group being decomposed by an acid; and n represents a positive integer of 1 to 3.

Abstract: There are here disclosed a photoresist material for lithography using a light of 220 nm or less which comprises at least a polymer represented by the following formula (2) and a photo-acid generator for generating an acid by exposure: wherein R1, R2, R3 and R5 are each a hydrogen atom or a methyl group; R4 is an acid-labile group, an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has an acid labile group, an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has a carboxyl group, or a hydrocarbon group having 3 to 13 carbon atoms, which has an epoxy group; R6 is a hydrogen atom, a hydrocarbon group having 1 to 12 carbon atoms, or an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has a carboxyl group; x, y and z are optional values which meet x+y+z=1, 0<x?1, 0?y<1 and 0?z<1; and a weight-average molecular weight of the polymer is in the range of 2000 to 200000, and a resin having a (meth)acrylate unit of an alicyclic lactone structure represented by the

Abstract: An LSI package having an optical interface is mounted on a surface of a photoelectric wiring board. The photoelectric wiring board and the optical interface are optically connected with sufficient precision. A wiring board side guide member including socket pins and guide pins is soldered and fixed onto the photoelectric wiring board including an optical transmission line, a guide pin, and a mirror. An optical interface side guide member having a fitting hole is glued to the optical interface. The optical interface is mounted on an interposer of the LSI package. The guide pin of the photoelectric wiring board is fitted into the fitting hole formed through the interposer. The guide pin of the guide member is fitted into the fitting hole of the guide member. As a result, position alignment between the optical interface and the photoelectric wiring board is conducted with high precision.

Abstract: There are here disclosed a photoresist material for lithography using a light of 220 nm or less which comprises at least a polymer represented by the following formula (2) and a photo-acid generator for generating an acid by exposure: wherein R1, R2, R3 and R5 are each a hydrogen atom or a methyl group; R4 is an acid-labile group, an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has an acid labile group, an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has a carboxyl group, or a hydrocarbon group having 3 to 13 carbon atoms, which has an epoxy group; R6 is a hydrogen atom, a hydrocarbon group having 1 to 12 carbon atoms, or an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has a carboxyl group; x, y and z are optional values which meet x+y+z=1, 0<x?1, 0?y<1 and 0?z<1; and a weight-average molecular weight of the polymer is in the range of 2000 to 200000, and a resin having a (meth)acrylate unit of an alicyclic lactone structure represented by the

Abstract: Light-emitting device array 2 is mounted on LSI 1, following which necessary light-emitting devices 2a among two or more light-emitting devices 2 that make up mounted light-emitting device array 2 are allowed to remain and unnecessary light-emitting devices 2a are removed in order to mount light-emitting devices on a plurality of output ports that are randomly arranged on LSI 1.

Abstract: Photodetectors 2a capable of converting optical signals that are received as input from the outside to electrical signals and supplying these electrical signals as output to output ports are mounted on two or more input ports of substrate 1 on which a semiconductor integrated circuit can be mounted; and moreover, the heights of these two or more photodetectors 2a are uniformly aligned, and the electrical signal input ports of the semiconductor integrated circuit that is mounted can be connected to the output ports of the above-described substrate 1.

Abstract: As a polymer exhibiting improved transparency which is suitable for a resist resin used in a chemical-amplification-type resist being applicable for photolithography using exposure light at 180 nm or shorter, this invention provides a polymer comprising a repeating unit resulting from polymerization of a monomer exhibiting a polymerization activity, wherein the monomer has a fluorine-containing acetal or ketal structure represented by general formula (1): wherein R represents an atomic group containing a carbon-carbon double bond exhibiting polymerization activity; at least one of R1 and R2 is fluorinated alkyl group or fluorinated aryl group having 1 to 20 carbon atoms; and R3 represents a radical selected from the group consisting of hydrogen atom, alkyl group, alkoxy-substituted alkyl group, fluorinated alkyl group, aryl group, fluorinated aryl group, aralkyl group and fluorinated aralkyl group having 1 to 20 carbon atoms.

Abstract: There is disclosed a photosensitive resin composition for interlayer insulating films, surface protection films or the like, which exhibits excellent resolution and can be developed with an aqueous alkaline solution. The photosensitive resin composition is prepared using a polymer at least having a constitutional repeating unit represented by general formula II: wherein R1 represents hydrogen atom or methyl group; R2 to R9 independently represent hydrogen atom, halogen atom or alkyl group having 1 to 4 carbon atoms; X represents —CH?N—, —CONH—, —(CH2)n—CH?N— or —(CH2)n—CONH— and the N atom in X is bonded to a carbon atom in the benzene ring having AO— at an o-position; A represents hydrogen atom or a group being decomposed by an acid; and n represents a positive integer of 1 to 3.

Abstract: There is provided a chemically-amplified resist composition having high transparency to light having a wavelength of 220 nanometers or smaller, excellent resistance to etching, and excellent adhesion to a substrate. The chemically-amplified resist composition is prepared through the use of at least one of a repeated structural unit having a bridged alicyclic ?-lactone structure defined in the general formula (III), a repeated structural unit having a bridged alicyclic ?-lactone structure defined in the general formula (IV), and a repeated structural unit having a bridged alicyclic ?-lactone structure defined in the general formula (V).

Abstract: There are here disclosed a photoresist material for lithography using a light of 220 nm or less which comprises at least a polymer represented by the following formula (2) and a photo-acid generator for generating an acid by exposure: wherein R1, R2, R3 and R5 are each a hydrogen atom or a methyl group; R4 is an acid-labile group, an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has an acid labile group, an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has a carboxyl group, or a hydrocarbon group having 3 to 13 carbon atoms, which has an epoxy group; R6 is a hydrogen atom, a hydrocarbon group having 1 to 12 carbon atoms, or an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has a carboxyl group; x, y and z are optional values which meet x+y+z=1, 0<x?1, 0?y<1 and 0?z<1; and a weight-average molecular weight of the polymer is in the range of 2000 to 200000, and a resin having a (meth)acrylate unit of an alicyclic lactone structure represented by the

Abstract: A photosensitive resin composition for forming an optical waveguide comprises, at least, a polymer comprising at least one repeating structural unit represented by the following general formula (1): wherein R1 represents a hydrogen atom or methyl group; and R2 to R5 each independently represent a hydrogen atom, a halogen atom or an alkyl group having 1 to 4 carbon atoms, and a photoacid generator. This composition can form an optical waveguide pattern with excellent shape precision and at a low cost, and an optical waveguide of a low propagation loss.

Abstract: An LSI package having an optical interface is mounted on a surface of a photoelectric wiring board. The photoelectric wiring board and the optical interface are optically connected with sufficient precision. A wiring board side guide member including socket pins and guide pins is soldered and fixed onto the photoelectric wiring board including an optical transmission line, a guide pin, and a mirror. An optical interface side guide member having a fitting hole is glued to the optical interface. The optical interface is mounted on an interposer of the LSI package. The guide pin of the photoelectric wiring board is fitted into the fitting hole formed through the interposer. The guide pin of the guide member is fitted into the fitting hole of the guide member. As a result, position alignment between the optical interface and the photoelectric wiring board is conducted with high precision.

Abstract: A noble alicyclic unsaturated compound represented by the general formula (1): wherein at least one of R1 and R2 is a fluorine atom or a fluorinated alkyl group; a polymer formed by the polymerization of a polymer precursor comprising the alicyclic compound. The polymer is useful, in the lithography using a light having a wavelength of 190 nm or less, as a chemically amplified resist which exhibits excellent transparency with respect to the light for use in exposure and also is excellent in the adhesion to a substrate and the resistance to dry etching.

Abstract: The present invention relates to a resist resin having an acid-decomposable group, which gives rise to decomposition of the acid-decomposable group to show an increased solubility to an aqueous alkali solution by the action of an acid, wherein the resist resin has, in the main chain, an alicyclic lactone structure represented by the following general formula (1). According to the present invention, a positive-type chemically amplified resist can be obtained which has high transparency to a far-ultraviolet light having a wavelength of about 220 nm or less, excellent etching resistance, and excellent adhesion to substrate; and a fine pattern required in production of semiconductor device can be formed. (wherein Z is an alicyclic hydrocarbon group having a lactone structure).

Abstract: As a polymer exhibiting improved transparency which is suitable for a resist resin used in a chemical-amplification-type resist being applicable for photolithography using exposure light at 180 nm or shorter, this invention provides a polymer comprising a repeating unit resulting from polymerization of a monomer exhibiting a polymerization activity, wherein the monomer has a fluorine-containing acetal or ketal structure represented by general formula (1): wherein R represents an atomic group containing a carbon-carbon double bond exhibiting polymerization activity; at least one of R1 and R2 is fluorinated alkyl group or fluorinated aryl group having 1 to 20 carbon atoms; and R3 represents a radical selected from the group consisting of hydrogen atom, alkyl group, alkoxy-substituted alkyl group, fluorinated alkyl group, aryl group, fluorinated aryl group, aralkyl group and fluorinated aralkyl group having 1 to 20 carbon atoms.

Abstract: Photoacid generators comprising sulfonium salt compounds represented by the following general formula (2) wherein R1 and R2 represent each an alkyl group optionally having oxo, or R1 and R2 may be cyclized together to form an alkylene group optionally having oxo; R3, R4 and R5 represent each hydrogen or a linear, branched, monocyclic, polycyclic or crosslinked cyclic alkyl group; and Y? represents a counter ion.

Abstract: There is provided a chemically-amplified resist composition having high transparency to light having a wavelength of 220 nanometers or smaller, excellent resistance to etching, and excellent adhesion to a substrate. The chemically-amplified resist composition is prepared through the use of at least one of a repeated structural unit having a bridged alicyclic &ggr;-lactone structure defined in the general formula (III), a repeated structural unit having a bridged alicyclic &ggr;-lactone structure defined in the general formula (IV), and a repeated structural unit having a bridged alicyclic &ggr;-lactone structure defined in the general formula (V).