Patents by Inventor Kaiser H. Wong

Kaiser H. Wong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5923955
    Abstract: There is disclosed a process for creating a flip chip bonded combination for a first integrated circuit and a second integrated circuit. Creating a first connection means on each bonding pad of a first integrated circuit within a first wall structure and a second connection means on each bonding pad of a second integrated circuit within a second wall structure. Removing the second wall structure and partially placing each second connection means within the first wall structure over a respective connection means of the first integrated circuit.
    Type: Grant
    Filed: May 28, 1998
    Date of Patent: July 13, 1999
    Assignee: Xerox Corporation
    Inventor: Kaiser H. Wong
  • Patent number: 5815327
    Abstract: A method for making a fresnel lens on a substrate by forming a plurality of annular rings. Each ring has a plurality of steps, with each step having an inner wall and an outer wall, and an upper surface.
    Type: Grant
    Filed: March 14, 1997
    Date of Patent: September 29, 1998
    Assignee: Xerox Corporation
    Inventor: Kaiser H. Wong
  • Patent number: 5779751
    Abstract: A method for making a fresnel lens on a substrate by forming a plurality of annular rings. Each ring has a plurality of steps, with each step having an inner wall and an outer wall, and an upper surface. The first step is formed on the substrate, and successive steps are formed at least partially on the upper surface of the previous step such that the outer wall of each successive annular step is offset from the outer wall of the previous annular step in an outward radial direction.
    Type: Grant
    Filed: March 14, 1997
    Date of Patent: July 14, 1998
    Assignee: Xerox Corporation
    Inventor: Kaiser H. Wong
  • Patent number: 5358907
    Abstract: A thin layer of Class 1B, IIB, IIIA, IVB, VB, VIB, VIIB or VIIIB metal is deposited on silicon or a silicon-based compound by immersion in a buffered metallic salt bath containing a hydrofluoric acid etchant followed by an electroless plating bath to build up the metal thickness. This process can also be used to pattern deposited metal on silicon or a silicon-based compound. An additional use of this process is to form metal silicides out of the deposited metal.
    Type: Grant
    Filed: May 10, 1993
    Date of Patent: October 25, 1994
    Assignee: Xerox Corporation
    Inventor: Kaiser H. Wong