Abstract: An analog-to-digital (ADC) converter system and method of using the system that can be used in low power situations. The converter can periodically or recurrently turn off a reference standard in order to conserve power and instead using a stable supply source as a reference voltage. A precise conversion for signal from the analog to the digital domain while maintaining a low quiescent current.

Abstract: An analog-to-digital (ADC) converter system and method of using the system that can be used in low power situations. The converter can periodically or recurrently turn off a reference standard in order to conserve power and instead using a stable supply source as a reference voltage. A precise conversion for signal from the analog to the digital domain while maintaining a low quiescent current.

Abstract: A system current sensor module can accurately sense or measure system current flowing through a sense current resistor by shunting current through a gain-setting resistor and using an amplifier to measure a resulting voltage, with an output transistor controlled by the amplifier controlling current through the gain setting resistor in a manner that tends to keep the amplifier inputs at the same voltage. The resistors can be thermally coupled to maintain similar temperatures when a system current is flowing. The thermal coupling can include conducting heat from a first resistor layer carrying the current sense resistor to a thermal cage layer located beyond a second resistor layer carrying the gain-setting resistor. This preserves accuracy, including during aging.

Abstract: A semiconductor Hall plate-based sensor can provide information about package stress and can be substantially immune to the influence of magnetic fields. In an example, the sensor can include a Hall plate and an excitation circuit. The excitation circuit can provide signals to respective node pairs of the Hall plate. A measurement circuit can receive information about a first electric signal at a first pair of nodes in response to a first portion of the excitation signal, and can receive information about a second electric signal at a second pair of nodes in response to a second portion of the excitation signal. The first and second electric signals can indicate a charge carrier mobility characteristic of the semiconductor, which can be used to provide an indication of physical stress on the sensor.

Abstract: A semiconductor-based stress sensor can include a bipolar transistor device with first and second collector terminals. An excitation circuit can provide an excitation signal to an emitter terminal of the bipolar transistor device, and a physical stress indicator for the semiconductor can be provided based on a relationship between signals measured at the collector terminals in response to the excitation signal. The signals can indicate a charge carrier mobility characteristic of the semiconductor, which can be used to provide an indication of physical stress. In an example, the physical stress indicator is based on a current deflection characteristic of a base region of the transistor device.

Abstract: A system current sensor module can accurately sense or measure system current flowing through a sense current resistor by shunting current through a gain-setting resistor and using an amplifier to measure a resulting voltage, with an output transistor controlled by the amplifier controlling current through the gain setting resistor in a manner that tends to keep the amplifier inputs at the same voltage. The resistors can be thermally coupled to maintain similar temperatures when a system current is flowing. The thermal coupling can include conducting heat from a first resistor layer carrying the current sense resistor to a thermal cage layer located beyond a second resistor layer carrying the gain-setting resistor. This preserves accuracy, including during aging.

Abstract: A system current sensor module can accurately sense or measure system current flowing through a sense current resistor by shunting current through a gain-setting resistor and using an amplifier to measure a resulting voltage, with an output transistor controlled by the amplifier controlling current through the gain setting resistor in a manner that tends to keep the amplifier inputs at the same voltage. The resistors can be thermally coupled to maintain similar temperatures when a system current is flowing. The thermal coupling can include conducting heat from a first resistor layer carrying the current sense resistor to a thermal cage layer located beyond a second resistor layer carrying the gain-setting resistor. This preserves accuracy, including during aging.

Abstract: A system current sensor module can accurately sense or measure system current flowing through a sense current resistor by shunting current through a gain-setting resistor and using an amplifier to measure a resulting voltage, with an output transistor controlled by the amplifier controlling current through the gain setting resistor in a manner that tends to keep the amplifier inputs at the same voltage. The resistors can be thermally coupled to maintain similar temperatures when a system current is flowing. The thermal coupling can include conducting heat from a first resistor layer carrying the current sense resistor to a thermal cage layer located beyond a second resistor layer carrying the gain-setting resistor. This preserves accuracy, including during aging.

Abstract: In a system and method for correcting a stress-impaired signal in a circuit, a calibration circuit produces a first calibrated voltage based on a base-emitter voltage of one or more pnp transistors, a second calibrated voltage based on a base-emitter voltage of one or more npn transistors, and a voltage proportional to absolute temperature. A set of reference values are generated based on these voltages. A gain correction factor is calculated based on a function of the set of reference values and a set of temperature-dependent values, and the stress-impaired signal is corrected based on the gain correction factor.

Abstract: In a system and method for correcting a stress-impaired signal in a circuit, a calibration circuit produces a first calibrated voltage based on a base-emitter voltage of one or more pnp transistors, a second calibrated voltage based on a base-emitter voltage of one or more npn transistors, and a voltage proportional to absolute temperature. A set of reference values are generated based on these voltages. A gain correction factor is calculated based on a function of the set of reference values and a set of temperature-dependent values, and the stress-impaired signal is corrected based on the gain correction factor.

Abstract: The data retention time of a non-volatile memory array containing multiple non-volatile memory cells, each cell having a floating gate, may be tested. The method may include: baking the non-volatile memory array at a first temperature for a first duration and at a second temperature that is materially different than the first temperature for a second duration; testing the non-volatile memory array before and after each baking; and deciding whether to use or sell the tested non-volatile memory array based on results of the testing before and after each baking.

Abstract: A radiation sensor (27) includes a radiation sensor chip (1) including first (7) and second (8) thermopile junctions connected to form a thermopile (7,8). The first thermopile junction is disposed in a floating portion of a dielectric membrane (3) thermally insulated from a silicon substrate (2) of the chip, and the second thermopile junction is disposed in the dielectric membrane directly adjacent to the substrate. Bump conductors (28) are bonded to corresponding bonding pads (28A) coupled to the thermopile (7,8) to physically and electrically connect the chip to conductors on a printed circuit board (23). The silicon substrate transmits infrared radiation to the thermopile while blocking visible light.

Abstract: A semiconductor device includes a semiconductor layer (2) and a dielectric stack (3) on the semiconductor layer. A plurality of etchant openings (24-1,2 . . . ) are formed through the dielectric stack (3) for passage of etchant for etching a plurality of overlapping sub-cavities (4-1,2 . . . ), respectively. The etchant is introduced through the etchant openings to etch a composite cavity (4) in the semiconductor layer by simultaneously etching the plurality of overlapping sub-cavities into the semiconductor layer.

Abstract: In one embodiment, a current sensing circuit corrects for the transient and steady state temperature measurement errors due to physical separation between a resistive sense element and a temperature sensor. The sense element has a temperature coefficient of resistance. The voltage across the sense element and a temperature signal from the temperature sensor are received by processing circuitry. The processing circuitry determines a power dissipated by the sense element, which may be instantaneous or average power, and determines an increased temperature of the sense element. The resistance of the sense element is changed by the increased temperature, and this derived resistance Rs is used to calculate the current through the sense element using the equation I=V/R or other related equation. The process is iterative to continuously improve accuracy and update the current.

Abstract: A radiation sensor (27) includes a radiation sensor chip (1) including first (7) and second (8) thermopile junctions connected to form a thermopile (7,8). The first thermopile junction is disposed in a floating portion of a dielectric membrane (3) thermally insulated from a silicon substrate (2) of the chip, and the second thermopile junction is disposed in the dielectric membrane directly adjacent to the substrate. Bump conductors (28) are bonded to corresponding bonding pads (28A) coupled to the thermopile (7,8) to physically and electrically connect the chip to conductors on a printed circuit board (23). The silicon substrate transmits infrared radiation to the thermopile while blocking visible light.

Abstract: An inertial sensor (16) includes a differential thermocouple (13) including first (4A) and second (4B) metal traces, a poly trace (6) with a first end connected to a first end of the first metal trace to form a first (?) thermocouple junction and a second end connected to a first end of the second metal trace to form a second (+) thermocouple junction. A gas mass (10) located symmetrically with respect to the thermocouple junctions is heated by a heater (8). Acceleration or tilting of the sensor shifts the relative location of the gas mass relative to the thermocouple junctions, causing differential heating thereof and generation of a corresponding thermocouple output signal.

Abstract: A radiation sensor (27) includes a radiation sensor chip (1) including first (7) and second (8) thermopile junctions connected to form a thermopile (7,8). The first thermopile junction is disposed in a floating portion of a dielectric membrane (3) thermally insulated from a silicon substrate (2) of the chip, and the second thermopile junction is disposed in the dielectric membrane directly adjacent to the substrate. Bump conductors (28) are bonded to corresponding bonding pads (28A) coupled to the thermopile (7,8) to physically and electrically connect the chip to conductors on a printed circuit board (23). The silicon substrate transmits infrared radiation to the thermopile while blocking visible light.

Abstract: Here, an apparatus is provided. The apparatus generally comprises a substrate and a thermopile. The thermopile includes a cavity that is etched into the substrate, a functional area that is formed over the substrate (where the cavity is generally coextensive with the functional area), and a metal ring formed over the substrate along the periphery of the functional area (where the metal ring is thermally coupled to the substrate).

Abstract: There has been very little (if any) attention to address contamination diffusion within an integrated circuit (IC) because there are very few applications where a protective overcoat will be penetrated as part of the manufacturing process. Here, a sealing ring is provided that address this problem. Preferably, the sealing ring uses the combination of electrically conductive barrier rings and the tortuous migration path to allow an electronic device (i.e., thermopile), where a protective overcoat is penetrated during manufacture, to communicate with external devices while being isolated to prevent contamination.

Abstract: In conventional membrane infrared (IR) sensors, little to no attention has been paid toward transmissivity of IR near metal traces. Here, because the substrate of an integrated circuit carrying the sensor is used as a visible light filter, reflection of IR radiation back into the substrate can affect the operation and reliability of the IR sensor. As a result, an arrangement is provided that reduces the area occupied by metal lines by reducing the pitch and compacting the routing so as to reduce the effects from the reflection of IR radiation by metal traces.