Abstract: A substrate includes a plurality of OLED, each having a conductor layer. A coating is formed over the OLEDs, the coating comprises a first inorganic layer formed over the OLED structures and at least partially over each of the contact layers, a buffer layer over the first inorganic layer, a second inorganic layer over the buffer layer, wherein the buffer layer comprises a first inorganic interface layer in contact with the first inorganic layer, a second inorganic interface layer in contact with the second inorganic layer, and an organic layer sandwiched between the first and second inorganic interface layers.

Abstract: A substrate includes a plurality of OLED, each having a conductor layer. A coating is formed over the OLEDs, the coating comprises a first inorganic layer formed over the OLED structures and at least partially over each of the contact layers, a buffer layer over the first inorganic layer, a second inorganic layer over the buffer layer, wherein the buffer layer comprises a first inorganic interface layer in contact with the first inorganic layer, a second inorganic interface layer in contact with the second inorganic layer, and an organic layer sandwiched between the first and second inorganic interface layers.

Abstract: A method for auto-sequencing of plasma processing system for concurrent processing of several substrates. The method autonomously sequence processing and move substrates in different directions as necessary. The method moves two substrate trays together into the processing chamber for substrate exchange, and remove the trays from the chamber one at a time. When needed, the method moves one tray into the processing chamber for removal of the susceptor without exposing the chamber to atmospheric environment.

Abstract: An apparatus and method for concurrent processing of several substrates. The system employs a novel architecture which, while being linear, may autonomously sequence processing and move substrates in different directions as necessary. The system moves several substrates concurrently; however, unlike the prior art it does not utilize trays.

Abstract: A showerhead for a plasma process apparatus for processing substrates, comprising a showerhead body comprising a top plate and a bottom plate defining a cavity in between; a gas inlet formed in the top plate; a perforated plate positioned between the top plate and the bottom plate and dissecting the cavity into an upper gas compartment and a lower gas compartment; and, wherein the bottom plate comprises a plurality of elongated diffusion slots on its lower surface and a plurality of diffusion holes on its upper surface, each of the diffusion holes making fluid connection from the lower gas compartment to more than one of the diffusion slots.

Abstract: A method for auto-sequencing of plasma processing system for concurrent processing of several substrates. The method autonomously sequence processing and move substrates in different directions as necessary. The method moves two substrate trays together into the processing chamber for substrate exchange, and remove the trays from the chamber one at a time. When needed, the method moves one tray into the processing chamber for removal of the susceptor without exposing the chamber to atmospheric environment.

Abstract: An apparatus and method for concurrent processing of several substrates. The system employs a novel architecture which, while being linear, may autonomously sequence processing and move substrates in different directions as necessary. The system moves several substrates concurrently; however, unlike the prior art it does not utilize trays.

Abstract: A susceptor for a plasma process apparatus, the susceptor having a graphite main body with a top surface for supporting at least one substrate, the top surface having a plasma sprayed aluminum oxide coating. A vacuum processing chamber, has a main chamber body, a showerhead provided at the ceiling of the chamber body, a pedestal provided inside the chamber body, and a susceptor coupled to the pedestal, the susceptor is made of a graphite main body having a top surface for supporting at least one substrate, the top surface having a dielectric coating such as, e.g., plasma sprayed aluminum oxide coating.

Abstract: An apparatus and method for concurrent processing of several substrates. The system employs a novel architecture which, while being linear, may autonomously sequence processing and move substrates in different directions as necessary. The system moves several substrates concurrently; however, unlike the prior art it does not utilize trays.

Abstract: An apparatus and method for concurrent processing of several substrates. The system employs a novel architecture which, while being linear, may autonomously sequence processing and move substrates in different directions as necessary. The system moves several substrates concurrently; however, unlike the prior art it does not utilize trays.

Abstract: A showerhead for a plasma process apparatus for processing substrates, comprising a showerhead body comprising a top plate and a bottom plate defining a cavity in between; a gas inlet formed in the top plate; a perforated plate positioned between the top plate and the bottom plate and dissecting the cavity into an upper gas compartment and a lower gas compartment; and, wherein the bottom plate comprises a plurality of elongated diffusion slots on its lower surface and a plurality of diffusion holes on its upper surface, each of the diffusion holes making fluid connection from the lower gas compartment to more than one of the diffusion slots.

Abstract: A processing method for depositing porous silica and doped silica films is provided. The method uses a cyclic scheme wherein each cycle comprises first codepositing silica with silicon, then selectively removing the silicon from the codeposit to form a porous structure. In a preferred embodiment, the codeposition is carried out by plasma enhanced chemical vapor deposition. After codeposition, the codeposit is exposed to a selective silicon removal reagent that can preferentially remove the silicon in the codeposit, leaving behind a porous structure. Repeated execution of the codeposition and the selective silicon removal steps build up thickness of the porous film. A porous film with highly uniform small pores and a desired porosity profile can be obtained with this method. This method is advantageous for forming a broad range of low-k dielectrics for semiconductor integrated circuit fabrication. The general method is also advantageous for forming other porous films for other applications.

Abstract: A processing method for depositing porous silica and doped silica films is provided. The method uses a cyclic scheme wherein each cycle comprises first codepositing silica with silicon, then selectively removing the silicon to form a porous structure. In a preferred embodiment, the codeposition is carried out by plasma enhanced chemical vapor deposition. The reagent feed stream comprises a mixture of codeposition reagents and a selective silicon removal reagent. RF power modulation is used to control the codeposition and the selective silicon removal steps with the later proceeds whenever the RF power is turned off or reduced to a low level. A porous film with highly uniform small pores and a desired porosity profile can be obtained with this method. This method is advantageous for forming a broad range of low-k dielectrics for semiconductor integrated circuit fabrication. The method is also advantageous for forming other porous films for other applications.

Abstract: A plasma display panel including a low k dielectric layer. In one embodiment, the dielectric layer is comprises a fluorine-doped silicon oxide layer such as an SiOF layer. In another embodiment, the dielectric layer comprises a Black Diamond™ layer. In certain embodiments, a capping layer such as SiN or SiON is deposited over the dielectric layer.

Abstract: In one aspect, the invention provides methods and apparatus for forming optical devices on large area substrates. The large area substrates are preferably made of quartz, silica or fused silica. The large area substrates enable larger optical devices to be formed on a single die. In another aspect, the invention provides methods and apparatus for forming integrated optical devices on large area substrates, such as quartz, silica or fused silica substrates. In another aspect, the invention provides methods and apparatus for forming optical devices using damascene techniques on large area substrates or silicon substrates. In another aspect, methods for forming optical devices by bonding an upper cladding layer on a lower cladding and a core is provided.

Abstract: A method of etching a dielectric layer formed on a substrate including a sequence of processing cycles, wherein each cycle comprises steps of depositing an inactive polymeric film, activating the film to etch the structure, and removing the film is disclosed. In one embodiment, the method uses a fluorocarbon gas to form the polymeric film and a substrate bias to activate such film.

Abstract: A system and method for processing large area substrates. In one embodiment, a system for processing large area substrates includes prep station, a stamping station and a stamp that is automatically moved between the stamping station and the prep station. The stamping station is adapted to retain a large area substrate thereon. The stamp has a patterned bottom surface that is adapted for microcontact printing. The prep station is for applying a precursor to the patterned bottom surface of the stamp. In one embodiment, a method for processing large area substrates includes the steps of disposing a large area substrate on a platen, inking a stamp adapted for microcontact printing, and automatically contacting a bottom of the stamp to the large area substrate supported on a platen.

Abstract: Provided herein is a method for cleaning a process chamber for semiconductor and/or flat panel display manufacturing. This method comprises the steps of converting a non-cleaning feed gas to a cleaning gas in a remote location and then delivering the cleaning gas to the process chamber for cleaning. Such method may further comprise the step of activating the cleaning gas outside the chamber before the delivery of the gas to the chamber. Also provided is a method of eliminating non-cleaning feed gas from the cleaning gas by cryo condensation.

Abstract: An apparatus and method for holding a substrate on a support layer in a processing chamber. The method includes the steps of positioning the substrate a predetermined distance from the support layer, introducing a plasma in the processing chamber, lowering the substrate to a point where the substrate engages the support layer, and maintaining the plasma for a predetermined time. The apparatus is directed to a susceptor system for a processing chamber in which a substrate is electrostatically held essentially flat. The apparatus includes a substrate support and a support layer composed of a dielectric material disposed on the substrate support. At least one lift pin is used for supporting the substrate relative to the support layer. Means are provided for moving each lift pin relative to the support layer. Means are also provided for producing a plasma within the processing chamber.

Abstract: Methods are provided for forming a transistor for use in an active matrix liquid crystal display (AMLCD). In one aspect a method is provided for processing a substrate including providing a glass substrate, depositing a conductive seed layer on a surface of the glass substrate, depositing a resist material on the conductive seed layer, patterning the resist layer to expose portions of the conductive seed layer, and depositing a metal layer on the exposed portions of the conductive seed layer by an electrochemical technique.