Abstract: Aspects relate to roaming using multi-link communication. In some examples, a wireless station communicating with a first access point via a multi-link connection, using a first link and at least one other link, may identify a failure condition associated with the at least one other link. In this case, the wireless station may use one of the links to verify a connection to a second access point, while maintaining connectivity with the first access point via the first link Once connectivity to the second access point is verified, the wireless station may switch its multi-link connection to the second access point.

Abstract: A memory cell comprises a capacitor comprising a first capacitor electrode having laterally-spaced walls, a second capacitor electrode comprising a portion above the first capacitor electrode, and capacitor insulator material between the second capacitor electrode and the first capacitor electrode. The capacitor comprises an intrinsic current leakage path from one of the first and second capacitor electrodes to the other through the capacitor insulator material. A parallel current leakage path is between the second capacitor electrode and the first capacitor electrode. The parallel current leakage path is circuit-parallel with the intrinsic current leakage path, of lower total resistance than the intrinsic current leakage path, and comprises leaker material that is everywhere laterally-outward of laterally-innermost surfaces of the laterally-spaced walls of the first capacitor electrode. Other embodiments, including methods, are disclosed.

Abstract: Some embodiments include a method of forming an integrated assembly. Semiconductor material is patterned into a configuration which includes a set of first upwardly-projecting structures spaced from one another by first gaps, and a second upwardly-projecting structure spaced from the set by a second gap. The second gap is larger than the first gaps. Conductive material is formed along the first and second upwardly-projecting structures and within the first and second gaps. First and second segments of protective material are formed over regions of the conductive material within the second gap, and then an etch is utilized to pattern the conductive material into first conductive structures within the first gaps and into second conductive structures within the second gap. Some embodiments include integrated assemblies.

Abstract: A disclosed method may include (1) generating a configuration file that represents a specific configuration of a network device included in a network, (2) storing the configuration file that represents the specific configuration of the network device among a set of configuration files available via an NMS, (3) assigning to the configuration file via the NMS, a configuration identifier that uniquely identifies the configuration file among the set of configuration files available via the NMS, (4) receiving, via the NMS, a rollback request to restore the network device to the specific configuration based at least in part on the configuration identifier, and then in response to receiving the rollback request, (5) restoring the network device to the specific configuration based at least in part on the configuration file. Various other systems, methods, and computer-readable media are also disclosed.

Abstract: Some embodiments include a method of forming an integrated assembly. Semiconductor material is patterned into a configuration which includes a set of first upwardly-projecting structures spaced from one another by first gaps, and a second upwardly-projecting structure spaced from the set by a second gap. The second gap is larger than the first gaps. Conductive material is formed along the first and second upwardly-projecting structures and within the first and second gaps. First and second segments of protective material are formed over regions of the conductive material within the second gap, and then an etch is utilized to pattern the conductive material into first conductive structures within the first gaps and into second conductive structures within the second gap. Some embodiments include integrated assemblies.

Abstract: Some embodiments include a method of forming an integrated assembly. Semiconductor material is patterned into a configuration which includes a set of first upwardly-projecting structures spaced from one another by first gaps, and a second upwardly-projecting structure spaced from the set by a second gap. The second gap is larger than the first gaps. Conductive material is formed along the first and second upwardly-projecting structures and within the first and second gaps. First and second segments of protective material are formed over regions of the conductive material within the second gap, and then an etch is utilized to pattern the conductive material into first conductive structures within the first gaps and into second conductive structures within the second gap. Some embodiments include integrated assemblies.

Abstract: Some embodiments include a method of forming an integrated assembly. Semiconductor material is patterned into a configuration which includes a set of first upwardly-projecting structures spaced from one another by first gaps, and a second upwardly-projecting structure spaced from the set by a second gap. The second gap is larger than the first gaps. Conductive material is formed along the first and second upwardly-projecting structures and within the first and second gaps. First and second segments of protective material are formed over regions of the conductive material within the second gap, and then an etch is utilized to pattern the conductive material into first conductive structures within the first gaps and into second conductive structures within the second gap. Some embodiments include integrated assemblies.

Abstract: A rapid compression machine (RCM) employs an electrical drive to move a piston disposed within a chamber housing. The electrical drive converts electrical power into linear motion of the piston, for example, to compress contents in a reaction chamber defined by the chamber housing and the piston. The temperature and pressure changes induced by the compression can cause reaction of contents within the chamber, for example, autoignition of the contents. The RCM can thus be used to study chemical kinetics. In some embodiments, the electrical drive can also rapidly move the piston in reverse to expand a volume of the reaction chamber, for example, to quench the compression-induced reaction therein. In such embodiments, the RCM may be considered a rapid compression-expansion machine (RCEM) and can be used for speciation studies.

Abstract: A memory cell comprises a capacitor comprising a first capacitor electrode having laterally-spaced walls, a second capacitor electrode comprising a portion above the first capacitor electrode, and capacitor insulator material between the second capacitor electrode and the first capacitor electrode. The capacitor comprises an intrinsic current leakage path from one of the first and second capacitor electrodes to the other through the capacitor insulator material. A parallel current leakage path is between the second capacitor electrode and the first capacitor electrode. The parallel current leakage path is circuit-parallel with the intrinsic current leakage path, of lower total resistance than the intrinsic current leakage path, and comprises leaker material that is everywhere laterally-outward of laterally-innermost surfaces of the laterally-spaced walls of the first capacitor electrode. Other embodiments, including methods, are disclosed.

Abstract: A memory cell comprises a capacitor comprising a first capacitor electrode having laterally-spaced walls, a second capacitor electrode comprising a portion above the first capacitor electrode, and capacitor insulator material between the second capacitor electrode and the first capacitor electrode. The capacitor comprises an intrinsic current leakage path from one of the first and second capacitor electrodes to the other through the capacitor insulator material. A parallel current leakage path is between the second capacitor electrode and the first capacitor electrode. The parallel current leakage path is circuit-parallel with the intrinsic current leakage path, of lower total resistance than the intrinsic current leakage path, and comprises leaker material that is everywhere laterally-outward of laterally-innermost surfaces of the laterally-spaced walls of the first capacitor electrode. Other embodiments, including methods, are disclosed.

Abstract: Integrated circuitry comprises a plurality of features horizontally arrayed in a two-dimensional (2D) lattice. The 2D lattice comprises a parallelogram unit cell having four lattice points and four straight-line sides between pairs of the four lattice points. The parallelogram unit cell has a straight-line diagonal there-across between two diagonally-opposed of the four lattice points. The straight-line diagonal is longer than each of the four straight-line sides. Individual of the features are at one of the four lattice points and occupy a maximum horizontal area that is horizontally elongated along a direction that is horizontally angled relative to each of the four straight-line sides. Other embodiments, including methods, are disclosed.

Abstract: The present invention relates to a process for production of anisotropic coke from a hydrocarbon feedstock and a system for producing the same. More particularly, the present invention relates to a thermal cracking of heavy petroleum residue producing petroleum coke and lighter hydrocarbon products. The invented process utilizes a novel scheme for production of a premium quality coke from primarily, a clarified oil feedstock. Clarified oil from fluid catalytic cracking unit is routed through a process scheme comprising a separator column, hydrotreatment section and an aromatic extraction section to create an ad-mix of effluents which form the feedstock to a thermal cracking unit. Premium quality anisotropic coke is produced in the thermal cracker reactor drums under tailor made process conditions employing the said feedstock.

Abstract: A distribution unit for distributing a multi-phase fluid mixture is disclosed. The distribution unit includes a distribution body defining a first passage, and a first distal body portion having a plurality of first slots. The distribution body includes a second distal body portion having a plurality of second slots distributed on a side wall of the second distal body portion. Each of the plurality of second slots is adapted to accommodate a baffle plate. The second distal body portion includes at least one aperture formed on a bottom wall of the second distal body portion. The plurality of first slots, the plurality of second slots, and the at least one aperture are in fluid communication with the first passage to discharge the flow of the multi-phase fluid.

Abstract: A memory cell comprises a capacitor comprising a first capacitor electrode having laterally-spaced walls, a second capacitor electrode comprising a portion above the first capacitor electrode, and capacitor insulator material between the second capacitor electrode and the first capacitor electrode. The capacitor comprises an intrinsic current leakage path from one of the first and second capacitor electrodes to the other through the capacitor insulator material. A parallel current leakage path is between the second capacitor electrode and the first capacitor electrode. The parallel current leakage path is circuit-parallel with the intrinsic current leakage path, of lower total resistance than the intrinsic current leakage path, and comprises leaker material that is everywhere laterally-outward of laterally-innermost surfaces of the laterally-spaced walls of the first capacitor electrode. Other embodiments, including methods, are disclosed.

Abstract: Integrated circuitry comprises a plurality of features horizontally arrayed in a two-dimensional (2D) lattice. The 2D lattice comprises a parallelogram unit cell having four lattice points and four straight-line sides between pairs of the four lattice points. The parallelogram unit cell has a straight-line diagonal there-across between two diagonally-opposed of the four lattice points. The straight-line diagonal is longer than each of the four straight-line sides. Individual of the features are at one of the four lattice points and occupy a maximum horizontal area that is horizontally elongated along a direction that is horizontally angled relative to each of the four straight-line sides.

Abstract: The present invention relates to a process for production of anisotropic coke from a hydrocarbon feedstock and a system for producing the same. More particularly, the present invention relates to a thermal cracking of heavy petroleum residue producing petroleum coke and lighter hydrocarbon products. The invented process utilizes a novel scheme for production of a premium quality coke from primarily, a clarified oil feedstock. Clarified oil from fluid catalytic cracking unit is routed through a process scheme comprising a separator column, hydro-treatment section and an aromatic extraction section to create an ad-mix of effluents which form the feedstock to a thermal cracking unit. Premium quality anisotropic coke is produced in the thermal cracker reactor drums under tailor made process conditions employing the said feedstock.

Abstract: This invention relates to a process for hydro cracking of heavy oils. More particularly, this invention relates to a catalytic process for converting heavy oils, such as vacuum gas oil (VGO) and VGO containing a high proportion of vacuum resid (VR) to middle distillate products.

Abstract: The disclosed method may include (1) identifying, within a virtual network, a primary virtual network device and a backup virtual network device that is to handle traffic directed to the primary virtual network device following a failure of the primary virtual network device, (2) installing, on the primary virtual network device, a first virtual controller that manages the primary virtual network device, (3) installing, on the backup virtual network device, a second virtual controller that manages the backup virtual network device, (4) directing, by the first virtual controller, the second virtual controller to replicate a state of the primary virtual network device, (5) detecting the failure of the primary virtual network device, and then in response to detecting the failure of the primary virtual network device, (6) directing, by the first virtual controller, the second virtual controller to facilitate handling the traffic directed to the primary virtual network device.

Abstract: The present invention relates to a hydrocracking reactor system and a process utilizing the same for upgrading heavy hydrocarbonaceous material to value-added products. Accordingly, an aspect of the present invention includes dispersing a liquid feedstock pre-mixed with a catalyst from top of a reactor vessel to obtain dispersed droplets having a predetermined droplet size less than 500 ?m, introducing a gaseous feed comprising primarily of hydrogen from bottom of the reactor vessel to form a continuous gaseous phase throughout a cross-section of the reactor vessel, and allowing the dispersed droplets to contact the continuous gaseous phase throughout the cross-section of the reactor vessel to form reaction effluent comprising one or more lighter product hydrocarbons. The method may further include removing at least a top portion and at least a bottom portion of the reaction effluent from the reactor vessel.

Abstract: A distribution unit for distributing a multi-phase fluid mixture is disclosed. The distribution unit includes a distribution body defining a first passage, and a first distal body portion having a plurality of first slots. The distribution body includes a second distal body portion having a plurality of second slots distributed on a side wall of the second distal body portion. Each of the plurality of second slots is adapted to accommodate a baffle plate. The second distal body portion includes at least one aperture formed on a bottom wall of the second distal body portion. The plurality of first slots, the plurality of second slots, and the at least one aperture are in fluid communication with the first passage to discharge the flow of the multi-phase fluid.