Abstract: A receiver circuit comprising: an input-pin; a receiver-input-node; a ground-pin; an internal-node that is connected to the input-pin; and a MOSFET. The MOSFET has a conduction channel connected in series between the internal-node and the receiver-input-terminal; and a gate terminal, the voltage at which sets the conductivity of the conduction channel. The receiver circuit also includes an amplifier that: has an input terminal that is connected to the internal-node; and provides a voltage control signal to the gate terminal of the MOSFET such that the voltage at the internal-node with respect to the ground-pin is constant.

Abstract: An integrated electro-static discharge (ESD) device has a set of metal layers. Each metal layer in the set has one or more first-terminal metal features interleaved with one or more second-terminal metal features in a lateral direction, and at least one first-terminal metal feature in a metal layer of the set overlaps in a normal direction at least one second-terminal metal feature in an adjacent metal layer of the set. By overlapping metal features in the normal direction, capacitance can be added to the ESD device, which improves its operating characteristics, without increasing the layout size of the ESD device.

Abstract: An integrated circuit can comprise an output terminal, a power transistor having a first current electrode coupled to the output terminal and a second current electrode coupled to a power supply terminal, a driver having an output coupled to a control electrode of the power switch, a capacitor having a first terminal coupled to the output terminal and a second terminal coupled to a circuit node, a first low pass filter coupled between the circuit node and an input of the driver, the first low pass filter having a first cut off frequency, a set of current sources, and a second low pass filter coupled between the circuit node and an output of the set of current sources. The second low pass filter can have a second cut off frequency that is higher than the first cut off frequency.

Abstract: Stabiliser circuits and methods are disclosed, for stabilizing a voltage at a gate driver terminal of a gate-driver for a driven transistor to a one of a high voltage and a low voltage, the stabilizer circuit comprising: a first transistor and a second transistor having respective first and second main terminals and connected in series between the gate voltage terminal and a first reference voltage terminal; and a low-pass filter connected between a control terminal of the first transistor and the gate driver terminal; wherein the first transistor is configured to have a threshold voltage which is less that a threshold voltage of the driven transistor; and the second transistor has a control terminal which is configured to be connected to a voltage which is an oppositive of the voltage at the gate driver terminal.

Abstract: A circuit is disclosed, comprising: an inverter comprising first and second inverter transistors, each having: a gate terminal connected in common to a drive node, a source terminal, connected to respective first and second voltage rails, and a drain terminal connected to a common first resistor, wherein an inverter output node is connected between the first resistor and the drain terminal of a shorting one of the transistors; a tying transistor connected between the drive node and the voltage rails to which the shorting transistor is connected; a biassing circuit connected to the tying transistor's control terminal and configured to be controlled by a local drive signal and bias the tying transistor control terminal to a voltage such that the tying transistor ties the drive node of the relevant voltage rail in response to the drive signal having a first state; and a circuit for providing the local drive signal.

Abstract: There is disclosed herein an SOI IC comprising an integrated capacitor comprising a parallel arrangement of a metal-insulator-metal, MIM, capacitor, a second capacitor, a third capacitor, and a fourth capacitor: wherein the second capacitor comprises as plates the substrate and a one of a plurality of semiconductor layers having an n-type doping, and comprises the buried oxide layer as dielectric; the third capacitor comprises as plates the polysilicon layer and a further one of a plurality of semiconductor layers having an n-type doping, and comprises an insulating layer between the plurality of semiconductor layers and the metallisation stack as dielectric; and the fourth capacitor comprises as plates the polysilicon plug and at least one of the plurality of semiconductor layers and comprises the oxide-lining as dielectric, wherein the oxide lining and the polysilicon plug form part of a lateral isolation (DTI) structure.

Abstract: An integrated circuit can comprise an output terminal, a power transistor having a first current electrode coupled to the output terminal and a second current electrode coupled to a power supply terminal, a driver having an output coupled to a control electrode of the power switch, a capacitor having a first terminal coupled to the output terminal and a second terminal coupled to a circuit node, a first low pass filter coupled between the circuit node and an input of the driver, the first low pass filter having a first cut off frequency, a set of current sources, and a second low pass filter coupled between the circuit node and an output of the set of current sources. The second low pass filter can have a second cut off frequency that is higher than the first cut off frequency.

Abstract: There is disclosed herein an SOI IC comprising an integrated capacitor comprising a parallel arrangement of a metal-insulator-metal, MIM, capacitor, a second capacitor, a third capacitor, and a fourth capacitor: wherein the second capacitor comprises as plates the substrate and a one of a plurality of semiconductor layers having an n-type doping, and comprises the buried oxide layer as dielectric; the third capacitor comprises as plates the polysilicon layer and a further one of a plurality of semiconductor layers having an n-type doping, and comprises an insulating layer between the plurality of semiconductor layers and the metallisation stack as dielectric; and the fourth capacitor comprises as plates the polysilicon plug and at least one of the plurality of semiconductor layers and comprises the oxide-lining as dielectric, wherein the oxide lining and the polysilicon plug form part of a lateral isolation (DTI) structure.

Abstract: An integrated electro-static discharge (ESD) device has a set of metal layers. Each metal layer in the set has one or more first-terminal metal features interleaved with one or more second-terminal metal features in a lateral direction, and at least one first-terminal metal feature in a metal layer of the set overlaps in a normal direction at least one second-terminal metal feature in an adjacent metal layer of the set. By overlapping metal features in the normal direction, capacitance can be added to the ESD device, which improves its operating characteristics, without increasing the layout size of the ESD device.

Abstract: A sensor interface circuit includes a continuous-time capacitance-to-voltage (C/V) converter having C/V input and output ends, the C/V input end being configured for electrical connection with first and second sense nodes of a capacitive sensor. A filter circuit is electrically coupled to the C/V output ends. The filter circuit has first and second resistors at corresponding first and second filter input ends of the filter circuit, a capacitor connected between first and second filter output ends of the filter circuit, and a chopper circuit interposed between the first and second filter input ends and the first and second filter output ends. A buffer circuit is electrically coupled with the first and second filter output ends of the filter circuit. The filter circuit applies low pass filtering of sense signals from the capacitive sensor before sampling and demodulation operations to reduce high-frequency interference in the sense signals.

Abstract: An integrated circuit for use in a differential network bus node comprising: a transceiver having a first transceiver input-output terminal and a second transceiver input-output terminal; a physical layer high terminal connected to the first transceiver input-output-terminal; a physical layer low terminal connected to the second transceiver input-output terminal; and a physical layer interface circuit comprising: a first low frequency RC matching circuit and a first high frequency RC matching circuit each connected between the first transceiver input-output-terminal and a first reference terminal; and a second low frequency RC matching circuit and a second high frequency RC matching circuit each connected between the second transceiver input-output terminal and a second reference terminal.

Abstract: An integrated circuit (202) for use in a differential network bus node (200) comprising: a transceiver (212) having a first transceiver input-output terminal (214) and a second transceiver input-output terminal (216); a physical layer high terminal (208) connected to the first transceiver input-output-terminal (214); a physical layer low terminal (210) connected to the second transceiver input-output terminal (216); and a physical layer interface circuit (234) comprising: a first low frequency RC matching circuit (236) and a first high frequency RC matching circuit (240) each connected between the first transceiver input-output-terminal (214) and a first reference terminal (238); and a second low frequency RC matching circuit (242) and a second high frequency RC matching circuit (246) each connected between the second transceiver input-output terminal (216) and a second reference terminal (244).

Abstract: An example apparatus that employs circuitry operating in response to digital clock signal circuitry. The apparatus includes first circuitry and second circuitry. The first circuitry produces a high-frequency digital clock signal characterized by a high frequency which carries radiative noise interference and by a modulated low-frequency digital clock signal characterized by a low frequency modulated by a first type of modulation. The second circuitry produces another low-frequency digital clock signal by combining a disparate modulation signal and a feedback signal derived from the other low-frequency digital clock signal, wherein the disparate modulation signal is characterized by modulating the feedback signal via a second type of modulation that is independent of the first type of modulation and by cancellation/blocking of the radiative noise interference manifested by the circuitry operating in response to the digital clock signal circuitry.

Abstract: An example apparatus that employs circuitry operating in response to digital clock signal circuitry. The apparatus includes first circuitry and second circuitry. The first circuitry produces a high-frequency digital clock signal characterized by a high frequency which carries radiative noise interference and by a modulated low-frequency digital clock signal characterized by a low frequency modulated by a first type of modulation. The second circuitry produces another low-frequency digital clock signal by combining a disparate modulation signal and a feedback signal derived from the other low-frequency digital clock signal, wherein the disparate modulation signal is characterized by modulating the feedback signal via a second type of modulation that is independent of the first type of modulation and by cancellation/blocking of the radiative noise interference manifested by the circuitry operating in response to the digital clock signal circuitry.

Abstract: A compensation circuit configured for coupling to a voltage source and a reference circuit. The voltage source is configured for supplying a supply voltage to the compensation circuit and the reference circuit. The reference circuit includes a first circuit node and a reference output electrically coupled to the first circuit node for outputting a reference signal having a constant reference amplitude. The compensation circuit includes a transient converter for converting a first transient perturbation of the supply voltage into a first compensation electrical signal proportional to said first transient perturbation, and an adder coupled to the transient converter for adding the first compensation electrical signal to an electrical signal at the first circuit node with a first polarity opposite to a disturbance polarity of a disturbance of the electrical signal in response to the first transient perturbation.

Abstract: A current regulator circuit to improve electromagnetic compatibility performance operation of an IC device includes an input to receive a regulated voltage signal, an output to provide an output voltage at a desired voltage level, the output voltage exhibiting noise from a load, a first field effect transistor FET including a first source electrode coupled to the input, a first drain electrode coupled to the output, and a first gate electrode, a voltage clamp circuit coupled to the output, the voltage clamp circuit configured to conduct a varying current based upon the noise, a constant current source to provide a constant current, and a second FET including a second source electrode coupled to the output, a second drain electrode coupled to the constant current source and to the first gate electrode, and a second gate electrode coupled to the voltage clamp circuit to mirror the varying current in the second FET.

Abstract: A current regulator circuit to improve electromagnetic compatibility performance operation of an IC device includes an input to receive a regulated voltage signal, an output to provide an output voltage at a desired voltage level, the output voltage exhibiting noise from a load, a first field effect transistor FET including a first source electrode coupled to the input, a first drain electrode coupled to the output, and a first gate electrode, a voltage clamp circuit coupled to the output, the voltage clamp circuit configured to conduct a varying current based upon the noise, a constant current source to provide a constant current, and a second FET including a second source electrode coupled to the output, a second drain electrode coupled to the constant current source and to the first gate electrode, and a second gate electrode coupled to the voltage clamp circuit to mirror the varying current in the second FET.

Abstract: A charging circuit for a bootstrap capacitor comprises a P MOSFET having a body diode and an N channel power MOSFET also having a body diode. The drain of the P MOSFET is coupled to the source of the N channel power MOSFET, and the source of the P MOSFET receives current from a vehicle's battery. The gate of the P MOSFET receives a control signal for turning the P MOSFET either on or off and the drain of the N channel power MOSFET is connected to a bootstrap capacitor The P MOSFET's body diode prevents current flow from the battery to the bootstrap capacitor when the P MOSFET is turned off and the N MOSFET's body diode prevents current flow from the bootstrap capacitor to the battery when the N MOSFET is turned off. The use of a power MOSFET device with its low ON resistance ensures that the capacitor is charged to a sufficiently high voltage even under low battery conditions.

Abstract: An integrated circuit die includes a stack of a substrate and multiple layers extending in parallel to the substrate. A number of integrated electronic components is formed in the stack, and connected to form an electronic circuit. The electronic circuit comprises a first electric contact, a second electric contact, and a coupling which couples the electric strips electrically to each other. The coupling includes a circuit via which extends through at least two of the layers. The die further includes an integrated current sensor having a coil arrangement for sensing a current flowing through a part of the electronic circuit. The coil arrangement is magnetically coupled to the circuit via over at least a part of a length of the circuit via to sensing a magnetic flux through the circuit via. A measurement unit can measure a parameter of the coil arrangement representative of a current flowing through the circuit via.

Abstract: A compensation circuit configured for coupling to a voltage source and a reference circuit. The voltage source is configured for supplying a supply voltage to the compensation circuit and the reference circuit. The reference circuit includes a first circuit node and a reference output electrically coupled to the first circuit node for outputting a reference signal having a constant reference amplitude. The compensation circuit includes a transient converter for converting a first transient perturbation of the supply voltage into a first compensation electrical signal proportional to said first transient perturbation, and an adder coupled to the transient converter for adding the first compensation electrical signal to an electrical signal at the first circuit node with a first polarity opposite to a disturbance polarity of a disturbance of the electrical signal in response to the first transient perturbation.