Abstract: Provided is a system and method for assessing a design layout for a semiconductor device level and for determining and designating different features of the design layout to be formed by different photomasks by decomposing the design layout. The features are designated by markings that associate the various device features with the multiple photomasks upon which they will be formed and then produced on a semiconductor device level using double patterning lithography, DPL, techniques. The markings are done at the device level and are included on the electronic file provided by the design house to the photomask foundry. In addition to overlay and critical dimension considerations for the design layout being decomposed, various other device criteria, design criteria processing criteria and their interrelation are taken into account, as well as device environment and the other device layers, when determining and marking the various device features.

Abstract: A method for circuit design includes a parasitic aware library embedded with one or more parameterized cells. The parasitic aware library is used to insert nets representing some but not all parasitic effects of a circuit into a circuit schematic enabling a single circuit schematic to be used for simulation of the circuit, parasitic verification of the circuit and LVS (Layout Versus Schematic) check. Only the single circuit schematic is required for the circuit design process and to form a mask set. Critical paths of the single circuit schematic are identified and parasitic effects are extracted and inserted into the schematic, enabling a pre-estimation of parasitic verification to be carried out and the LVS check to be carried out using a circuit schematic with some parasitic effects prior to the post-layout simulation in which all parasitic components of the layout are included.

Abstract: A semiconductor device design system comprising at least one processor is configured to define a resistance-capacitance (RC) extraction tool for determining a distance between first and second through-semiconductor-vias extracted from a layout of a semiconductor device. The semiconductor device has a semiconductor substrate and the first and second through-semiconductor-vias in the semiconductor substrate. The semiconductor device design system comprising the at least one processor is also configured to extract parasitic parameters of a coupling in the semiconductor substrate based on the distance determined by the RC extraction tool and a model of the coupling included in a simulation tool.

Abstract: Among other things, one or more techniques and/or systems for performing design layout are provided. In an example, a design layout corresponds to a layout of a standard cell whose connectivity is described by a netlist. For example, the netlist specifies net types for respective vias of the standard cell. One or more connectivity rings are formed within the design layout to provide connectivity for one or more vias of the design layout. For example, a first connectivity ring is generated, such as from mandrel, to connect one or more ring one vias. A second connectivity ring is generated, such as from passive pattern, to connect one or more ring two vias. One or more cuts are generated within the design layout to isolate vias having different net types. In this way, the design layout is self-aligned double patterning (SADP) compliant.

Abstract: A method includes determining model parameters for forming an integrated circuit, and generating a techfile using the model parameters. The techfile includes at least two of a C_worst table, a C_best table, and a C_nominal table. The C_worst table stores greatest parasitic capacitances between layout patterns of the integrated circuit when lithography masks comprising the layout patterns shift relative to each other. The C_best table stores smallest parasitic capacitances between the layout patterns when the lithography masks shift relative to each other. The C_nominal table stores nominal parasitic capacitances between the layout patterns when the lithography masks do not shift relative to each other. The techfile is embodied on a tangible non-transitory storage medium.

Abstract: A method comprises: selecting a circuit pattern or network of circuit patterns in a layout of an integrated circuit (IC) to be fabricating using double patterning technology (DPT). Circuit patterns near the selected circuit pattern or network are grouped into one or more groups. For each group, a respective expected resistance-capacitance (RC) extraction error cost is calculated, which is associated with a mask alignment error, for two different sets of mask assignments. The circuit patterns in the one or more groups are assigned to be patterned by respective photomasks, so as to minimize a total of the expected RC extraction error costs.

Abstract: An integrated circuit (IC) simulation method comprises providing a device process model from a non-transitory machine readable storage medium into a programmed computer. The device process model includes one or more device variables. Each device variable defines a probability distribution of an active-device-level variation of devices in an IC. A conductive line model and/or a multi patterning technology (MPT) model is provided from the storage medium to the computer. The conductive line model includes one or more conductive line variables. Each conductive line variable defines a probability distribution of a conductive-line process-induced variation. The MPT model includes one or more MPT variables. Each MPT variable defines a probability distribution of a mask-misalignment-induced conductive line coupling variation. A Monte Carlo simulation is performed in the computer, including the device process model and the conductive line model or MPT model, to identify parasitic couplings in the IC.

Abstract: In a semiconductor device design method performed by at least one processor, first and second electrical components are extracted from a layout of a semiconductor device. The semiconductor device has a semiconductor substrate and the first and second electrical components in the semiconductor substrate. Parasitic parameters of a coupling in the semiconductor substrate between the first and second electrical components are extracted using a first tool. Intrinsic parameters of the first and second electrical components are extracted using a second tool different from the first tool. The extracted parasitic parameters and intrinsic parameters are combined into a model of the semiconductor device. The parasitic parameters of the coupling are extracted based on a model of the coupling included in the second tool.

Abstract: A method of generating masks for making an integrated circuit includes determining if a coupling capacitance value of a conductive path of a first and second groups of conductive paths of the integrated circuit is greater than a predetermined threshold value. The determination is performed based on at least a resistance-capacitance extraction result of the conductive path and a predetermined level of mask misalignment. The layout patterns are modified to increase an overall vertical distance between the first group of conductive paths and the second group of conductive paths if the coupling capacitance value is greater than the predetermined threshold value.

Abstract: Among other things, one or more techniques and/or systems are provided for modeling a discrete device as a macro device. That is, the discrete device can comprise one or more parasitic elements, such as parasitic resistances and/or capacitances. Because values of the parasitic elements are unknown during pre-simulation of the discrete device, the discrete device can be modeled as a macro device, which can be used during pre-simulation to take into account the parasitic elements. For example, specified parameters, such as channel length, can be used to obtain a set of RC values that specify predicted values for the one or more parasitic elements of the discrete device. The discrete device can be modeled as the macro device using the set of RC values. In this way, the macro device can be used during pre-simulation to take into account the parasitic effects of parasitic elements of the discrete device.

Abstract: A method of generating resistance-capacitance (RC) technology files is disclosed. The method comprises receiving a plurality of metal schemes from an IC foundry and dividing the plurality of metal schemes into one or more modular RC groups. The method further comprises identifying a modular RC structure; calculating capacitance values of the modular RC structure by means of a field solver; calculating an equivalent dielectric constant and an equivalent height of the RC structure based upon a variety of interconnect layers not having interconnects; calculating an equivalent dielectric constant and an equivalent height for each of the plurality of metal schemes; and deriving capacitance values of each of the plurality of metal schemes from the capacitance values of the modular RC structure.

Abstract: A method for analyzing an IC design, comprises: using a computer implemented electronic design automation tool to perform a parasitic RC extraction for a layout of the IC design, the parasitic RC extraction outputting for each of a plurality of routing paths, a nominal capacitive coupling, a minimum capacitive coupling and a maximum capacitive coupling, where the minimum and maximum capacitive couplings correspond to circuit patterning in the presence of double patterning mask misalignments; and performing one of a setup time analysis or a hold time analysis of the IC design using a computer implemented static timing analysis tool. For a given flip-flop having a launch path and a capture path, the setup or hold time analyses is performed using the minimum capacitive coupling for one of the launch and capture paths and the maximum capacitive coupling for the other of the launch and capture paths.

Abstract: A received layout identifies a plurality of circuit components to be included in an integrated circuit (IC) layer for double patterning the layer using two photomasks, the layout including a plurality of first patterns to be included in the first photomask and at least one second pattern to be included in the second photomask. A selected one of the first patterns has first and second endpoints, to be replaced by a replacement pattern connecting the first endpoint to a third endpoint. At least one respective keep-out region is provided adjacent to each respective remaining first pattern except for the selected first pattern. Data are generated representing the replacement pattern, such that no part of the replacement pattern is formed in any of the keep-out regions. Data representing the remaining first patterns and the replacement pattern are output.

Abstract: A method includes receiving data representing a layout of a DPT-layer of an integrated circuit generated by a place and route tool. The layout includes a plurality of polygons to be formed in the DPT-layer by a multi-patterning process. First and second ones of the plurality of polygons to be formed using first and second photomasks, respectively are identified. Any intervening polygons along a first path connecting the first polygon to the second polygon, and separator regions between adjacent polygons along the first path are identified. The separator regions have sizes less than a minimum threshold distance between polygons formed on the first photomask. The separator regions are counted. A multi-patterning conflict is identified, if the count of separator regions is even, prior to assigning all remaining ones of the plurality of polygons to the first or second masks.

Abstract: Integrated circuit libraries include a first standard cell having a first left boundary and a first right boundary, and a second standard cell having a second left boundary and a second right boundary. The first standard cell and the second standard cell are of a same cell variant. A first active region in the first standard cell has a different length of diffusion than a second active region in the second standard cell. The first active region and the second active region are corresponding active regions represented by a same component of a same circuit diagram representing both the first standard cell and the second standard cell.

Abstract: A method for analyzing an IC design, comprises: using a computer implemented electronic design automation tool to perform a parasitic RC extraction for a layout of the IC design, the parasitic RC extraction outputting for each of a plurality of routing paths, a nominal capacitive coupling, a minimum capacitive coupling and a maximum capacitive coupling, where the minimum and maximum capacitive couplings correspond to circuit patterning in the presence of double patterning mask misalignments; and performing one of a setup time analysis or a hold time analysis of the IC design using a computer implemented static timing analysis tool. For a given flip-flop having a launch path and a capture path, the setup or hold time analyses is performed using the minimum capacitive coupling for one of the launch and capture paths and the maximum capacitive coupling for the other of the launch and capture paths.

Abstract: Among other things, one or more techniques and/or systems are provided for modeling a discrete device as a macro device. That is, the discrete device can comprise one or more parasitic elements, such as parasitic resistances and/or capacitances. Because values of the parasitic elements are unknown during pre-simulation of the discrete device, the discrete device can be modeled as a macro device, which can be used during pre-simulation to take into account the parasitic elements. For example, specified parameters, such as channel length, can be used to obtain a set of RC values that specify predicted values for the one or more parasitic elements of the discrete device. The discrete device can be modeled as the macro device using the set of RC values. In this way, the macro device can be used during pre-simulation to take into account the parasitic effects of parasitic elements of the discrete device.

Abstract: A method includes extracting a first netlist from a first layout of a semiconductor circuit and estimating layout-dependent effect data based on the first netlist. A first simulation of the semiconductor circuit is performed based on the first netlist using an electronic design automation tool, and a second simulation of the semiconductor circuit is performed based on a circuit schematic using the electronic design automation tool. A weight and a sensitivity of the at least one layout-dependent effect are calculated, and the first layout of the semiconductor circuit is adjusted based on the weight and the sensitivity to provide a second layout of the semiconductor circuit. The second layout is stored in a non-transient storage medium.

Abstract: A method for analyzing an IC design, comprises: using a computer implemented electronic design automation tool to perform a parasitic RC extraction for a layout of the IC design, the parasitic RC extraction outputting for each of a plurality of routing paths, a nominal capacitive coupling, a minimum capacitive coupling and a maximum capacitive coupling, where the minimum and maximum capacitive couplings correspond to circuit patterning in the presence of double patterning mask misalignments; and performing one of a setup time analysis or a hold time analysis of the IC design using a computer implemented static timing analysis tool. For a given flip-flop having a launch path and a capture path, the setup or hold time analysis is performed using the minimum capacitive coupling for one of the launch and capture paths and the maximum capacitive coupling for the other of the launch and capture paths.

Abstract: A received layout identifies a plurality of circuit components to be included in an integrated circuit (IC) layer for double patterning the layer using two photomasks, the layout including a plurality of first patterns to be included in the first photomask and at least one second pattern to be included in the second photomask. A selected one of the first patterns has first and second endpoints, to be replaced by a replacement pattern connecting the first endpoint to a third endpoint. At least one respective keep-out region is provided adjacent to each respective remaining first pattern except for the selected first pattern. Data are generated representing the replacement pattern, such that no part of the replacement pattern is formed in any of the keep-out regions. Data representing the remaining first patterns and the replacement pattern are output.