Abstract: A flat hash table includes a plurality of entries, and each entry includes a hash function index and a usage bitmap. A method for block device level compression mapping using the flat hash table includes compressing uncompressed data to compressed data, retrieving an entry of the flat hash table using an uncompressed block address of the uncompressed data, determining a compressed block address of the compressed data by executing at least one hash function and by determining a hash function in the at least one hash function for mapping the uncompressed block address to the compressed block address that corresponds to a space in a block storage device, storing the compressed data to the space that corresponds to the compressed block address, and updating the hash function index of the entry of the flat hash table with an index indicative of the hash function.

Abstract: Described are examples for storing data on a storage device, including storing, in a live write stream cache, one or more logical blocks (LBs) corresponding to a data segment, writing, for each LB in the data segment, a cache element of a cache entry that points to the LB in the live write stream cache, where the cache entry includes multiple cache elements corresponding to the multiple LBs of the data segment, writing, for the cache entry, a table entry in a mapping table that points to the cache entry, and when a storage policy is triggered for the cache entry, writing the multiple LBs, pointed to by each cache element of the cache entry, to a stream for storing as contiguous LBs on the storage device, and updating the table entry to point to a physical address of a first LB of the contiguous LBs on the storage device.

Abstract: A method for obtaining a feature extraction model, a method for human fall detection and a terminal device are provided. The method for human fall detection includes: inputting a human body image into a feature extraction model for feature extraction to obtain a target image feature; in response to a distance between the target image feature and a pre-stored mean value of standing category image features being greater than or equal to a preset distance threshold, determining that the human body image is a human falling image; and in response to the distance being less than the preset distance threshold, determining that the human body image is a human standing image. The feature extraction model is obtained based on constraint training to aggregate standing category image features and separate falling category image features from the standing category image features.

Abstract: A computerized simulation validating method for a full-scale distribution network single phase-to-ground fault test is implemented by simulating a full-scale test system with external quantities being controlled to be conformant and validating the full-scale distribution network single phase-to-ground fault test based on a conformance check result between the internal quantities of the field testing and the internal quantities of the simulation testing. The simulation validating method for a full-scale distribution network single phase-to-ground fault test improves normalization and conformance of the full-scale distribution network ground fault test. The computerized simulation validating system, apparatus, and medium for a full-scale distribution network single phase-to-ground fault test also achieve the benefits noted above.

Abstract: An electric-vehicle frame includes a mid-section and an end section. The mid-section has first and second frame rails spaced from each other by a first distance along a cross-vehicle axis defining a battery compartment therebetween. The end-section has first and second frame rails spaced from each other by a second distance along the cross-vehicle axis smaller than the first distance. A first connector is fixed to the first frame rail of the mid-section and to the first frame rail of the end-section. A second connector is fixed to the second frame rail of the mid-section and to the second frame rail of the end-section.

Abstract: The present disclosure describes techniques of metadata management for transparent block level compression. A first area may be created in a backend solid state drive. The first area may comprise a plurality of entries. The plurality of entries may be indexed by addresses of a plurality of blocks of uncompressed data. Each of the plurality of entries comprises a first part configured to store metadata and a second part configured to store compressed data. Each of the plurality blocks of uncompressed data may be compressed individually to generate a plurality of compressed blocks. Metadata and at least a portion of compressed data associated with each of the plurality of compressed blocks may be stored in one of the plurality of entries based on an address of a corresponding block of uncompressed data. A second area may be created in the backend solid state drive for storing the rest of the compressed data.

Abstract: A device includes: a complementary transistor including: a first transistor having a first source/drain region and a second source/drain region; and a second transistor stacked on the first transistor, and having a third source/drain region and a fourth source/drain region, the third source/drain region overlapping the first source/drain region, the fourth source/drain region overlapping the second source/drain region. The device further includes: a first source/drain contact electrically coupled to the third source/drain region; a second source/drain contact electrically coupled to the second source/drain region; a gate isolation structure adjacent the first and second transistors; and an interconnect structure electrically coupled to the first source/drain contact and the second source/drain contact.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes forming a first transistor over a substrate, wherein the first transistor comprises a first source/drain feature; depositing an interlayer dielectric layer around the first transistor; etching an opening in the interlayer dielectric layer to expose the first source/drain feature; conformably depositing a semimetal layer over the interlayer dielectric layer, wherein the semimetal layer has a first portion in the opening in the interlayer dielectric layer and a second portion over a top surface of the interlayer dielectric layer; and forming a source/drain contact in the opening in the interlayer dielectric layer.

Abstract: A method is provided that includes depositing a catalyst layer along a surface of the opening and performing a selectivity enhancement process. The selectivity enhancement process alters a deposition rate of a metal component on at least one region of the catalyst layer. The metal component is deposited on the catalyst layer. Exemplary selectivity enhancement processes include a self-assembled monolayer (SAM), introducing an accelerator, and/or introducing a suppressor.

Abstract: A semiconductor device includes a substrate, a source/drain region disposed in the substrate, a silicide structure disposed on the source/drain region, a first dielectric layer disposed over the substrate, a conductive contact disposed in the first dielectric layer and over the silicide structure, a second dielectric layer disposed over the first dielectric layer, a via contact disposed in the second dielectric layer and connected to the conductive contact, and a first metal surrounding the via contact.

Abstract: A semiconductor device includes a source/drain portion, a metal silicide layer disposed over the source/drain portion, and a transition layer disposed between the source/drain portion and the metal silicide layer. The transition layer includes implantation elements, and an atomic concentration of the implantation elements in the transition layer is higher than that in each of the source/drain portion and the metal silicide layer so as to reduce a contact resistance between the source/drain portion and the metal silicide layer. Methods for manufacturing the semiconductor device are also disclosed.

Abstract: An electric-vehicle frame includes a mid-section and an end section. The mid-section has first and second frame rails spaced from each other by a first distance along a cross-vehicle axis defining a battery compartment therebetween. The end-section has first and second frame rails spaced from each other by a second distance along the cross-vehicle axis smaller than the first distance. A first connector is fixed to the first frame rail of the mid-section and to the first frame rail of the end-section. A second connector is fixed to the second frame rail of the mid-section and to the second frame rail of the end-section.

Abstract: Splayed front horn for vehicle frames are disclosed. An example apparatus disclosed herein includes a first structural member extending along an axial direction of a vehicle, a second structural member coupled to the first structural member, the second structural member splayed relative the first structural member, second structural member including a first section having a first material property, the first section adjacent to the first structural member, and a second section joined to the first section, the second section having a second material property, the first material property different than the second material property.

Abstract: An electric-vehicle frame includes a mid-section and an end section. The mid-section has first and second frame rails spaced from each other by a first distance along a cross-vehicle axis defining a battery compartment therebetween. The end-section has first and second frame rails spaced from each other by a second distance along the cross-vehicle axis smaller than the first distance. A first connector is fixed to the first frame rail of the mid-section and to the first frame rail of the end-section. A second connector is fixed to the second frame rail of the mid-section and to the second frame rail of the end-section.

Abstract: A semiconductor device includes a semiconductor substrate, an epitaxial structure, a silicide structure, a conductive structure, and a protection segment. The epitaxial structure is disposed in the semiconductor substrate. The silicide structure is disposed in the epitaxial structure. The conductive structure is disposed over the silicide structure and is electrically connected to the silicide structure. The protection segment is made of metal nitride, is disposed over the silicide structure, and is disposed between the silicide structure and the conductive structure.

Abstract: A wireless network device comprises a wireless signal driver, an application-driver framework that includes a bidirectional interface and an application interface. The application-driver framework is configured for application-agnostic and driver-agnostic communication. The bidirectional interface communicatively couples the wireless signal driver to the application-driver framework. The bidirectional interface includes an abstraction layer via which driver-agnostic command signals and driver-agnostic event signals are communicated with the application-driver framework and via which driver-specific command signals and driver-specific event signals are communicated with the wireless signal driver. The application interface is configured to interface with applications and with the application-driver framework.

Abstract: A wireless network device comprises a wireless signal driver, an application-driver framework that includes a bidirectional interface and an application interface. The application-driver framework is configured for application-agnostic and driver-agnostic communication. The bidirectional interface communicatively couples the wireless signal driver to the application-driver framework. The bidirectional interface includes an abstraction layer via which driver-agnostic command signals and driver-agnostic event signals are communicated with the application-driver framework and via which driver-specific command signals and driver-specific event signals are communicated with the wireless signal driver. The application interface is configured to interface with applications and with the application-driver framework.

Abstract: The present disclosure describes a semiconductor device with a rare earth metal oxide layer and a method for forming the same. The method includes forming fin structures on a substrate and forming superlattice structures on the fin structures, where each of the superlattice structures includes a first-type nanostructured layer and a second-type nanostructured layer. The method further includes forming an isolation layer between the superlattice structures, implanting a rare earth metal into a top portion of the isolation layer to form a rare earth metal oxide layer, and forming a polysilicon structure over the superlattice structures. The method further includes etching portions of the superlattice structures adjacent to the polysilicon structure to form a source/drain (S/D) opening and forming an S/D region in the S/D opening.

Abstract: A titanium precursor is used to selectively form a titanium silicide (TiSix) layer in a semiconductor device. A plasma-based deposition operation is performed in which the titanium precursor is provided into an opening, and a reactant gas and a plasma are used to cause silicon to diffuse to a top surface of a transistor structure. The diffusion of silicon results in the formation of a silicon-rich surface of the transistor structure, which increases the selectivity of the titanium silicide formation relative to other materials of the semiconductor device. The titanium precursor reacts with the silicon-rich surface to form the titanium silicide layer. The selective titanium silicide layer formation results in the formation of a titanium silicon nitride (TiSixNy) on the sidewalls in the opening, which enables a conductive structure such as a metal source/drain contact to be formed in the opening without the addition of another barrier layer.

Abstract: An electric-vehicle frame includes a mid-section and an end section. The mid-section has first and second frame rails spaced from each other by a first distance along a cross-vehicle axis defining a battery compartment therebetween. The end-section has first and second frame rails spaced from each other by a second distance along the cross-vehicle axis smaller than the first distance. A first connector is fixed to the first frame rail of the mid-section and to the first frame rail of the end-section. A second connector is fixed to the second frame rail of the mid-section and to the second frame rail of the end-section.