Patents by Inventor Kan Takeuchi
Kan Takeuchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11821795Abstract: A semiconductor device according to an embodiment includes a holding circuit including a buffer configured to obtain a heat stress information having a temperature dependency every predetermined period and a stress counter configured to accumulate the heat stress information and hold the accumulated value as a cumulative stress count value, a control circuit including an operation determination threshold value, and a wireless communication circuit. According to the semiconductor device according to the embodiment, while reducing the power consumption, it is possible to wirelessly transmit the cumulative heat stress information.Type: GrantFiled: September 2, 2020Date of Patent: November 21, 2023Assignee: RENESAS ELECTRONICS CORPORATIONInventors: Kan Takeuchi, Yoshio Takazawa, Fumio Tsuchiya, Daisuke Oshida, Naoya Ota, Masaki Shimada, Shinya Konishi
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Patent number: 11407920Abstract: An object of the present invention is to provide a paint which is excellent in various performances such as resistance to various organic solvents and hydraulic fluid, corrosion resistance, weather resistance, heat resistance, adhesion to substrates, and coating film appearance, and which in particular, can be suitably used for aircraft applications. Specifically, the invention provides a paint which contains, as an essential component of a main agent, a polyester resin (A) having a hydroxyl value in a range of 150 to 400 mg KOH/g and a weight average molecular weight (Mw) in a range of 500 to 5,000, and a polyisocyanate compound (B) as an essential component of a curing agent; an aircraft paint using the paint; and an aircraft using the aircraft paint.Type: GrantFiled: December 6, 2018Date of Patent: August 9, 2022Assignee: DIC CorporationInventors: Kan Takeuchi, Ikue Hamamoto
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Patent number: 11125628Abstract: An object of the present invention is to provide a technique of duplexing monitor circuits in which a common cause failure can be eliminated. A semiconductor device has: a first monitor circuit monitoring that temperature or voltage of the semiconductor device is within a normal operation range; and a second monitor circuit monitoring normal operation of the first monitor circuit. The first and second monitor circuits generate information of temperature or voltage on the basis of different principles.Type: GrantFiled: September 10, 2018Date of Patent: September 21, 2021Assignee: RENESAS ELECTRONICS CORPORATIONInventors: Kan Takeuchi, Shinya Konishi, Fumio Tsuchiya, Masaki Shimada
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Patent number: 11068330Abstract: The semiconductor device has a module having a predetermined function, an error information acquisition circuit for acquiring error information about an error occurring in the module, a stress acquisition circuit for acquiring a stress accumulated value as an accumulated value of stress applied to the semiconductor device, and an analysis data storage for storing analysis data as data for analyzing the state of the semiconductor device, the error information and the stress accumulated value at the time of occurrence of the error being associated with each other.Type: GrantFiled: August 16, 2019Date of Patent: July 20, 2021Assignee: RENESAS ELECTRONICS CORPORATIONInventors: Naoya Ota, Kan Takeuchi, Fumio Tsuchiya, Masaki Shimada, Shinya Konishi, Daisuke Oshida
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Publication number: 20210080330Abstract: A semiconductor device according to an embodiment includes a holding circuit including a buffer configured to obtain a heat stress information having a temperature dependency every predetermined period and a stress counter configured to accumulate the heat stress information and hold the accumulated value as a cumulative stress count value, a control circuit including an operation determination threshold value, and a wireless communication circuit. According to the semiconductor device according to the embodiment, while reducing the power consumption, it is possible to wirelessly transmit the cumulative heat stress information.Type: ApplicationFiled: September 2, 2020Publication date: March 18, 2021Inventors: Kan TAKEUCHI, Yoshio TAKAZAWA, Fumio TSUCHIYA, Daisuke OSHIDA, Naoya OTA, Masaki SHIMADA, Shinya KONISHI
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Publication number: 20210017417Abstract: An object of the present invention is to provide a paint which is excellent in various performances such as resistance to various organic solvents and hydraulic fluid, corrosion resistance, weather resistance, heat resistance, adhesion to substrates, and coating film appearance, and which in particular, can be suitably used for aircraft applications. Specifically, the invention provides a paint which contains, as an essential component of a main agent, a polyester resin (A) having a hydroxyl value in a range of 150 to 400 mg KOH/g and a weight average molecular weight (Mw) in a range of 500 to 5,000, and a polyisocyanate compound (B) as an essential component of a curing agent; an aircraft paint using the paint; and an aircraft using the aircraft paint.Type: ApplicationFiled: December 6, 2018Publication date: January 21, 2021Inventors: Kan Takeuchi, Ikue Hamamoto
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Publication number: 20200081757Abstract: The semiconductor device has a module having a predetermined function, an error information acquisition circuit for acquiring error information about an error occurring in the module, a stress acquisition circuit for acquiring a stress accumulated value as an accumulated value of stress applied to the semiconductor device, and an analysis data storage for storing analysis data as data for analyzing the state of the semiconductor device, the error information and the stress accumulated value at the time of occurrence of the error being associated with each other.Type: ApplicationFiled: August 16, 2019Publication date: March 12, 2020Inventors: Naoya OTA, Kan TAKEUCHI, Fumio TSUCHIYA, Masaki SHIMADA, Shinya KONISHI, Daisuke OSHIDA
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Patent number: 10396802Abstract: In order to provide a semiconductor device capable of detecting HCI degradation of a semiconductor element in a simple structure, the semiconductor device includes an oscillation circuit including a plurality of logic gates of various driving forces which are formed by transistors and coupled in series, a frequency counter that measures an oscillation frequency of the oscillation circuit, and a comparator that compares the oscillation frequency of the oscillation circuit measured by the frequency counter with a predetermined value.Type: GrantFiled: June 10, 2016Date of Patent: August 27, 2019Assignee: RENESAS ELECTRONICS CORPORATIONInventors: Mitsuhiko Igarashi, Kan Takeuchi, Takeshi Okagaki
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Patent number: 10361685Abstract: There is to provide a semiconductor device capable of predicting a wear-out failure based on the degradation stress cumulative amount of power supply voltage and environmental temperature imposed on the device, which includes a ring oscillator having a plurality of stages of inverters, and a control circuit that emphasizes the voltage dependency and temperature dependency of an oscillation frequency of the ring oscillator or a control circuit that emphasizes the temperature dependency not the voltage dependency.Type: GrantFiled: December 1, 2016Date of Patent: July 23, 2019Assignee: RENESAS ELECTRONICS CORPORATIONInventors: Kan Takeuchi, Masaki Shimada, Takeshi Okagaki, Yoshio Takazawa
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Patent number: 10310007Abstract: An object of the invention is to provide a semiconductor apparatus capable of achieving conditions that are stricter than the conditions in which the stable operation is guaranteed, without increasing the circuit size. A semiconductor apparatus (10) includes a semiconductor circuit (11); a voltage generator (12) that selects one of at least two types of voltages and applies a power supply voltage, the at least two types of voltages including a normal voltage at which the semiconductor circuit (11) normally operates and a low voltage which is lower than the normal voltage; and a clock generator (13) that supplies the semiconductor circuit (11) with a clock signal having a constant frequency regardless of the power supply voltage.Type: GrantFiled: December 17, 2015Date of Patent: June 4, 2019Assignee: RENESAS ELECTRONICS CORPORATIONInventors: Masaki Shimada, Kan Takeuchi
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Publication number: 20190154518Abstract: An object of the present invention is to provide a technique of duplexing monitor circuits in which a common cause failure can be eliminated. A semiconductor device has: a first monitor circuit monitoring that temperature or voltage of the semiconductor device is within a normal operation range; and a second monitor circuit monitoring normal operation of the first monitor circuit. The first and second monitor circuits generate information of temperature or voltage on the basis of different principles.Type: ApplicationFiled: September 10, 2018Publication date: May 23, 2019Inventors: Kan TAKEUCHI, Shinya KONISHI, Fumio TSUCHIYA, Masaki SHIMADA
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Patent number: 10211620Abstract: In a semiconductor device, an abnormality monitor unit detects whether abnormal leakage current has been generated from a first functional module or a second functional module on the basis of a comparison between a change in voltage at a first node between the first functional module and a first power switch when the first power switch is in an off state and a change in voltage at a second node between the second functional module and a second power switch when the second power switch is in the off state.Type: GrantFiled: July 22, 2016Date of Patent: February 19, 2019Assignee: Renesas Electronics CorporationInventors: Kan Takeuchi, Mitsuhiko Igarashi, Makoto Ogasawara
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Publication number: 20180156859Abstract: To provide a semiconductor device that can predict wear-out failure with high accuracy based on an accumulated value of degradation stress, such as a power-source voltage or an environmental temperature, imposed to the semiconductor device, the semiconductor device includes a first circuit that holds a first accumulated degradation stress count value, a second circuit that holds a second accumulated degradation stress count value, a third circuit that holds a count value of an accumulated operating time or a value corresponding thereto, and a fourth circuit or an operating unit that receives the first accumulated degradation stress count value, the second accumulated degradation stress count value, and the count value of the accumulated operating time or the value corresponding to the value of the accumulated operating time.Type: ApplicationFiled: October 27, 2017Publication date: June 7, 2018Inventors: Kan Takeuchi, Fumio Tsuchiya, Shinya Konishi
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Publication number: 20170327720Abstract: The invention provides an adhesive coating material which realizes excellent adhesive strength and moist-heat resistance at the time of bonding a solar cell sealing material and a base sheet, a polyol composition for the coating material, a cured object of the adhesive coating material, an adhesive sheet obtained by being coated with adhesive coating material, and a solar cell module using the sheet. As a polyol component of the adhesive coating material which forms an adhesive layer b in a back sheet E of the solar cell module illustrated in Figure, a hydroxyl group-containing (meth)acrylic resin (I) and unsaturated double bond-containing polyester polyol (II) are used as essential components.Type: ApplicationFiled: February 25, 2016Publication date: November 16, 2017Applicant: DIC CORPORATIONInventors: Miho Takeda, Takatoshi Matsuo, Tatsuya Kouyama, Kan Takeuchi, Yasunobu Hirota
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Publication number: 20170187358Abstract: There is to provide a semiconductor device capable of predicting a wear-out failure based on the degradation stress cumulative amount of power supply voltage and environmental temperature imposed on the device, which includes a ring oscillator having a plurality of stages of inverters, and a control circuit that emphasizes the voltage dependency and temperature dependency of an oscillation frequency of the ring oscillator or a control circuit that emphasizes the temperature dependency not the voltage dependency.Type: ApplicationFiled: December 1, 2016Publication date: June 29, 2017Inventors: Kan TAKEUCHI, Masaki SHIMADA, Takeshi OKAGAKI, Yoshio TAKAZAWA
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Publication number: 20170063075Abstract: In a semiconductor device, an abnormality monitor unit detects whether abnormal leakage current has been generated from a first functional module or a second functional module on the basis of a comparison between a change in voltage at a first node between the first functional module and a first power switch when the first power switch is in an off state and a change in voltage at a second node between the second functional module and a second power switch when the second power switch is in the off state.Type: ApplicationFiled: July 22, 2016Publication date: March 2, 2017Applicant: Renesas Electronics CorporationInventors: Kan TAKEUCHI, Mitsuhiko IGARASHI, Makoto OGASAWARA
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Publication number: 20170038426Abstract: In order to provide a semiconductor device capable of detecting HCI degradation of a semiconductor element in a simple structure, the semiconductor device includes an oscillation circuit including a plurality of logic gates of various driving forces which are formed by transistors and coupled in series, a frequency counter that measures an oscillation frequency of the oscillation circuit, and a comparator that compares the oscillation frequency of the oscillation circuit measured by the frequency counter with a predetermined value.Type: ApplicationFiled: June 10, 2016Publication date: February 9, 2017Applicant: Renesas Electronics CorporationInventors: Mitsuhiko IGARASHI, Kan TAKEUCHI, Takeshi OKAGAKI
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Publication number: 20160291078Abstract: An object of the invention is to provide a semiconductor apparatus capable of achieving conditions that are stricter than the conditions in which the stable operation is guaranteed, without increasing the circuit size. A semiconductor apparatus (10) includes a semiconductor circuit (11); a voltage generator (12) that selects one of at least two types of voltages and applies a power supply voltage, the at least two types of voltages including a normal voltage at which the semiconductor circuit (11) normally operates and a low voltage which is lower than the normal voltage; and a clock generator (13) that supplies the semiconductor circuit (11) with a clock signal having a constant frequency regardless of the power supply voltage.Type: ApplicationFiled: December 17, 2015Publication date: October 6, 2016Inventors: Masaki SHIMADA, Kan TAKEUCHI
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Patent number: 8791214Abstract: A low dielectric constant, a low dielectric loss tangent, and heat resistance are achieved. An active ester resin that has a resin structure produced by reacting a polyfunctional phenolic compound (a1) with a monofunctional aromatic carboxylic acid or its chloride (a2) and an aromatic dicarboxylic acid or its chloride (a3). The polyfunctional phenolic compound (a1) is represented by structural formula (1) below: (where Ar represents a benzene ring, a naphthalene ring, a benzene ring nuclear-substituted by an alkyl group having 1 to 4 carbon atoms, or a naphthalene ring nuclear-substituted by an alkyl group having 1 to 4 carbon atoms, X represents a methylene group, a divalent cyclic aliphatic hydrocarbon group, a phenylene dimethylene group, or a biphenylene-dimethylene group, and n represents the number of repeating units and the average thereof is in a range of 0.5 to 10).Type: GrantFiled: May 25, 2012Date of Patent: July 29, 2014Assignee: DIC CorporationInventors: Kan Takeuchi, Etsuko Suzuki, Kunihiro Morinaga, Kazuo Arita
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Publication number: 20140151094Abstract: A low dielectric constant, a low dielectric loss tangent, and heat resistance are achieved. An active ester resin that has a resin structure produced by reacting a polyfunctional phenolic compound (a1) with a monofunctional aromatic carboxylic acid or its chloride (a2) and an aromatic dicarboxylic acid or its chloride (a3). The polyfunctional phenolic compound (a1) is represented by structural formula (1) below: (where Ar represents a benzene ring, a naphthalene ring, a benzene ring nuclear-substituted by an alkyl group having 1 to 4 carbon atoms, or a naphthalene ring nuclear-substituted by an alkyl group having 1 to 4 carbon atoms, X represents a methylene group, a divalent cyclic aliphatic hydrocarbon group, a phenylene dimethylene group, or a biphenylene-dimethylene group, and n represents the number of repeating units and the average thereof is in a range of 0.5 to 10).Type: ApplicationFiled: May 25, 2012Publication date: June 5, 2014Applicant: DIC CorporationInventors: Kan Takeuchi, Etsuko Suzuki, Kunihiro Morinaga, Kazuo Arita