Patents by Inventor Kan Takeuchi
Kan Takeuchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8093723Abstract: In a semiconductor integrated circuit device having plural layers of buried wirings, it is intended to prevent the occurrence of a discontinuity caused by stress migration at an interface between a plug connected at a bottom thereof to a buried wiring and the buried wiring. For example, in the case where the width of a first Cu wiring is not smaller than about 0.9 ?m and is smaller than about 1.44 ?m, and the width of a second Cu wiring and the diameter of a plug are about 0.18 ?m, there are arranged two or more plugs which connect the first wirings and the second Cu wirings electrically with each other.Type: GrantFiled: May 2, 2011Date of Patent: January 10, 2012Assignee: Renesas Electronics CorporationInventors: Takako Funakoshi, Eiichi Murakami, Kazumasa Yanagisawa, Kan Takeuchi, Hideo Aoki, Hizuru Yamaguchi, Takayuki Oshima, Kazuyuki Tsunokuni, Kousuke Okuyama
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Publication number: 20110204486Abstract: In a semiconductor integrated circuit device having plural layers of buried wirings, it is intended to prevent the occurrence of a discontinuity caused by stress migration at an interface between a plug connected at a bottom thereof to a buried wiring and the buried wiring. For example, in the case where the width of a first Cu wiring is not smaller than about 0.9 ?m and is smaller than about 1.44 ?m, and the width of a second Cu wiring and the diameter of a plug are about 0.18 ?m, there are arranged two or more plugs which connect the first wirings and the second Cu wirings electrically with each other.Type: ApplicationFiled: May 2, 2011Publication date: August 25, 2011Inventors: Takako FUNAKOSHI, Eiichi MURAKAMI, Kazumasa YANAGISAWA, Kan TAKEUCHI, Hideo AOKI, Hizuru YAMAGUCHI, Takayuki OSHIMA, Kazuyuki TSUNOKUNI, Kousuke OKUYAMA
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Patent number: 7977238Abstract: A manufacturing technique is disclosed for producing a semiconductor integrated circuit device having plural layers of buried wirings, and such that there is prevented the occurrence of a discontinuity caused by stress migration at an interface between a plug connected at a bottom thereof to a buried wiring and the buried wiring. For example, in the case where the width of a first Cu wiring is not smaller than about 0.9 ?m and is smaller than about 1.44 ?m, and the width of a second Cu wiring and the diameter of a plug are about 0.18 ?m, there are arranged two or more plugs which connect the first wirings and the second Cu wirings electrically with each other.Type: GrantFiled: April 21, 2010Date of Patent: July 12, 2011Assignee: Renesas Electronics CorporationInventors: Takako Funakoshi, Eiichi Murakami, Kazumasa Yanagisawa, Kan Takeuchi, Hideo Aoki, Hizuru Yamaguchi, Takayuki Oshima, Kazuyuki Tsunokuni, Kousuke Okuyama
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Patent number: 7786585Abstract: In a semiconductor integrated circuit device having plural layers of buried wirings, it is intended to prevent the occurrence of a discontinuity caused by stress migration at an interface between a plug connected at a bottom thereof to a buried wiring and the buried wiring. For example, in the case where the width of a first Cu wiring is not smaller than about 0.9 ?m and is smaller than about 1.44 ?m, and the width of a second Cu wiring and the diameter of a plug are about 0.18 ?m, there are arranged two or more plugs which connect the first wirings and the second Cu wirings electrically with each other.Type: GrantFiled: August 8, 2008Date of Patent: August 31, 2010Assignee: Renesas Electronics Corp.Inventors: Takako Funakoshi, Eiichi Murakami, Kazumasa Yanagisawa, Kan Takeuchi, Hideo Aoki, Hizuru Yamaguchi, Takayuki Oshima, Kazuyuki Tsunokuni, Kousuke Okuyama
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Publication number: 20100203724Abstract: A manufacturing technique is disclosed for producing a semiconductor integrated circuit device having plural layers of buried wirings, and such that there is prevented the occurrence of a discontinuity caused by stress migration at an interface between a plug connected at a bottom thereof to a buried wiring and the buried wiring. For example, in the case where the width of a first Cu wiring is not smaller than about 0.9 ?m and is smaller than about 1.44 ?m, and the width of a second Cu wiring and the diameter of a plug are about 0.18 ?m, there are arranged two or more plugs which connect the first wirings and the second Cu wirings electrically with each other.Type: ApplicationFiled: April 21, 2010Publication date: August 12, 2010Inventors: Takako FUNAKOSHI, Eiichi Murakami, Kazumasa Yanagisawa, Kan Takeuchi, Hideo Aoki, Hizuru Yamaguchi, Takayuki Oshima, Kazuyuki Tsunokuni, Kousuke Okuyama
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Publication number: 20080303158Abstract: In a semiconductor integrated circuit device having plural layers of buried wirings, it is intended to prevent the occurrence of a discontinuity caused by stress migration at an interface between a plug connected at a bottom thereof to a buried wiring and the buried wiring. For example, in the case where the width of a first Cu wiring is not smaller than about 0.9 ?m and is smaller than about 1.44 ?m, and the width of a second Cu wiring and the diameter of a plug are about 0.18 ?m, there are arranged two or more plugs which connect the first wirings and the second Cu wirings electrically with each other.Type: ApplicationFiled: August 8, 2008Publication date: December 11, 2008Inventors: Takako Funakoshi, Eiichi Murakami, Kazumasa Yanagisawa, Kan Takeuchi, Hideo Aoki, Hizuru Yamaguchi, Takayuki Oshima, Kazuyuki Tsunokuni, Kousuke Okuyama
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Patent number: 7411301Abstract: In a semiconductor integrated circuit device having plural layers of buried wirings, it is intended to prevent the occurrence of a discontinuity caused by stress migration at an interface between a plug connected at a bottom thereof to a buried wiring and the buried wiring. For example, in the case where the width of a first Cu wiring is not smaller than about 0.9 ?m and is smaller than about 1.44 ?m, and the width of a second Cu wiring and the diameter of a plug are about 0.18 ?m, there are arranged two or more plugs which connect the first wirings and the second Cu wirings electrically with each other.Type: GrantFiled: September 30, 2005Date of Patent: August 12, 2008Assignee: Renesas Technology Corp.Inventors: Takako Funakoshi, Eiichi Murakami, Kazumasa Yanagisawa, Kan Takeuchi, Hideo Aoki, Hizuru Yamaguchi, Takayuki Oshima, Kazuyuki Tsunokuni, Kousuke Okuyama
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Publication number: 20080061298Abstract: A semiconductor memory device includes a plurality of memory cells, each including, a source region formed of a semiconductor material, a drain region formed of the semiconductor material, and a first region formed of the semiconductor material and located between the source region and the drain region. First and second insulator films sandwich the first region and a first gate electrode is connected to the first region through the first insulator film. In this arrangement, the first region is adapted to accumulate charges corresponding to stored information.Type: ApplicationFiled: October 31, 2007Publication date: March 13, 2008Inventors: Kazuo YANO, Tomoyuki Ishii, Takashi Hashimoto, Koichi Seki, Masakazu Aoki, Takeshi Sakata, Yoshinobu Nakagome, Kan Takeuchi
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Patent number: 7309892Abstract: A field-effect semiconductor element implemented with a fewer number of elements and a reduced area and capable of storing data by itself without need for cooling at a cryogenic temperature, and a memory device employing the same. Gate-channel capacitance is set so small that whether or not a trap captures one electron or hole can definitely and distinctively be detected in terms of changes of a current of the semiconductor FET element. By detecting a change in a threshold voltage of the semiconductor element brought about by trapping of electron or hole in the trap, data storage can be realized at a room temperature.Type: GrantFiled: May 24, 2006Date of Patent: December 18, 2007Assignee: Hitachi, Ltd.Inventors: Kazuo Yano, Tomoyuki Ishii, Takashi Hashimoto, Koichi Seki, Masakazu Aoki, Takeshi Sakata, Yoshinobu Nakagome, Kan Takeuchi
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Publication number: 20060208315Abstract: A field-effect semiconductor element implemented with a fewer number of elements and a reduced area and capable of storing data by itself without need for cooling at a cryogenic temperature, and a memory device employing the same. Gate-channel capacitance is set so small that whether or not a trap captures one electron or hole can definitely and distinctively be detected in terms of changes of a current of the semiconductor FET element. By detecting a change in a threshold voltage of the semiconductor element brought about by trapping of electron or hole in the trap, data storage can be realized at a room temperature.Type: ApplicationFiled: May 24, 2006Publication date: September 21, 2006Inventors: Kazuo Yano, Tomoyuki Ishii, Takashi Hashimoto, Koichi Seki, Masakazu Aoki, Takeshi Sakata, Yoshinobu Nakagome, Kan Takeuchi
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Patent number: 7061053Abstract: A field-effect semiconductor element implemented with a fewer number of elements and a reduced area and capable of storing data by itself without need for cooling at a cryogenic temperature, and a memory device employing the same. Gate-channel capacitance is set so small that whether or not a trap captures one electron or hole can definitely and distinctively be detected in terms of changes of a current of the semiconductor FET element. By detecting a change in a threshold voltage of the semiconductor element brought about by trapping of electron or hole in the trap, data storage can be realized at a room temperature.Type: GrantFiled: August 31, 2004Date of Patent: June 13, 2006Assignee: Hitachi, Ltd.Inventors: Kazuo Yano, Tomoyuki Ishii, Takashi Hashimoto, Koichi Seki, Masakazu Aoki, Takeshi Sakata, Yoshinobu Nakagome, Kan Takeuchi
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Patent number: 7023091Abstract: In a semiconductor integrated circuit device having plural layers of buried wirings, it is intended to prevent the occurrence of a discontinuity caused by stress migration at an interface between a plug connected at a bottom thereof to a buried wiring and the buried wiring. For example, in the case where the width of a first Cu wiring is not smaller than about 0.9 ?m and is smaller than about 1.44 ?m, and the width of a second Cu wiring and the diameter of a plug are about 0.18 ?m, there are arranged two or more plugs which connect the first wirings and the second Cu wirings electrically with each other.Type: GrantFiled: June 20, 2003Date of Patent: April 4, 2006Assignee: Renesas Technology Corp.Inventors: Takako Funakoshi, Eiichi Murakami, Kazumasa Yanagisawa, Kan Takeuchi, Hideo Aoki, Hizuru Yamaguchi, Takayuki Oshima, Kazuyuki Tsunokuni
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Publication number: 20060027928Abstract: In a semiconductor integrated circuit device having plural layers of buried wirings, it is intended to prevent the occurrence of a discontinuity caused by stress migration at an interface between a plug connected at a bottom thereof to a buried wiring and the buried wiring. For example, in the case where the width of a first Cu wiring is not smaller than about 0.9 ?m and is smaller than about 1.44 ?m, and the width of a second Cu wiring and the diameter of a plug are about 0.18 ?m, there are arranged two or more plugs which connect the first wirings and the second Cu wirings electrically with each other.Type: ApplicationFiled: September 30, 2005Publication date: February 9, 2006Inventors: Takako Funakoshi, Eiichi Murakami, Kazumasa Yanagisawa, Kan Takeuchi, Hideo Aoki, Hizuru Yamaguchi, Takayuki Oshima, Kazuyuki Tsunokuni
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Publication number: 20050023615Abstract: A field-effect semiconductor element implemented with a fewer number of elements and a reduced area and capable of storing data by itself without need for cooling at a cryogenic temperature, and a memory device employing the same. Gate-channel capacitance is set so small that whether or not a trap captures one electron or hole can definitely and distinctively be detected in terms of changes of a current of the semiconductor FET element. By detecting a change in a threshold voltage of the semiconductor element brought about by trapping of electron or hole in the trap, data storage can be realized at a room temperature.Type: ApplicationFiled: August 31, 2004Publication date: February 3, 2005Inventors: Kazuo Yano, Tomoyuki Ishii, Takashi Hashimoto, Koichi Seki, Masakazu Aoki, Takeshi Sakata, Yoshinobu Nakagome, Kan Takeuchi
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Patent number: 6787841Abstract: A field-effect semiconductor element implemented with a fewer number of elements and a reduced area and capable of storing data by itself without need for cooling at a cryogenic temperature, and a memory device employing the same. Gate-channel capacitance is set so small that whether or not a trap captures one electron or hole can definitely and distinctively be detected in terms of changes of a current of the semiconductor FET element. By detecting a change in a threshold voltage of the semiconductor element brought about by trapping of electron or hole in the trap, data storage can be realized at a room temperature.Type: GrantFiled: August 29, 2003Date of Patent: September 7, 2004Assignee: Hitachi, Ltd.Inventors: Kazuo Yano, Tomoyuki Ishii, Takashi Hashimoto, Koichi Seki, Masakazu Aoki, Takeshi Sakata, Yoshinobu Nakagome, Kan Takeuchi
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Publication number: 20040065961Abstract: In a semiconductor integrated circuit device having plural layers of buried wirings, it is intended to prevent the occurrence of discontinuity caused by stress migration at an interface between a plug connected at a bottom thereof to a buried wiring and the buried wiring. For example, in the case where the width of a Cu wiring is not smaller than about 0.9 &mgr;m and smaller than about 1.44 &mgr;m and the width of another Cu wiring and the diameter of a plug are about 0.18 &mgr;m, there are arranged two or more plugs which connect the Cu wirings and another Cu wirings electrically with each other on the Cu wiring.Type: ApplicationFiled: June 20, 2003Publication date: April 8, 2004Inventors: Takako Funakoshi, Eiichi Murakami, Kazumasa Yanagisawa, Kan Takeuchi, Hideo Aoki, Hizuru Yamaguchi, Takayuki Oshima, Kazuyuki Tsunokuni
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Publication number: 20040041209Abstract: A field-effect semiconductor element implemented with a fewer number of elements and a reduced area and capable of storing data by itself without need for cooling at a cryogenic temperature, and a memory device employing the same. Gate-channel capacitance is set so small that whether or not a trap captures one electron or hole can definitely and distinctively be detected in terms of changes of a current of the semiconductor FET element. By detecting a change in a threshold voltage of the semiconductor element brought about by trapping of electron or hole in the trap, data storage can be realized at a room temperature.Type: ApplicationFiled: August 29, 2003Publication date: March 4, 2004Inventors: Kazuo Yano, Tomoyuki Ishii, Takashi Hashimoto, Koichi Seki, Masakazu Aoki, Takeshi Sakata, Yoshinobu Nakagome, Kan Takeuchi
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Patent number: 6674117Abstract: A field-effect semiconductor element implemented with a fewer number of elements and a reduced area and capable of storing data by itself without need for cooling at a cryogenic temperature, and a memory device employing the same. Gate-channel capacitance is set so small that whether or not a trap captures one electron or hole can definitely and distinctively be detected in terms of changes of a current of the semiconductor FET element. By detecting a change in a threshold voltage of the semiconductor element brought about by trapping of electron or hole in the trap, data storage can be realized at a room temperature.Type: GrantFiled: July 27, 2001Date of Patent: January 6, 2004Assignee: Hitachi, Ltd.Inventors: Kazuo Yano, Tomoyuki Ishii, Takashi Hashimoto, Koichi Seki, Masakazu Aoki, Takeshi Sakata, Yoshinobu Nakagome, Kan Takeuchi
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Patent number: 6643193Abstract: A semiconductor device whose characteristics are highly reliably regulated for circuits whose desired characteristics need to be realized without being affect by unevenness in device characteristics is to be provided. A replica MOS transistor for amperage measurement connected to an external measuring terminal is provided. A delay circuit and other circuits whose desired characteristics are to be realized have a constant current source MOS transistor formed in the same process as the replica MOS transistor, and a trimming voltage vtri is commonly applied to the respective gates of the constant current source MOS transistor and the replica MOS transistor. Trimming data determined on the basis of an amperage measured from the external measuring terminal are stored into a memory means such as an electrically rewritable non-volatile memory or the like. The trimming data determine the trimming voltage vtri.Type: GrantFiled: September 20, 2002Date of Patent: November 4, 2003Assignees: Hitachi, Ltd., Hitachi ULSI Systems Co., Ltd.Inventors: Takashi Yamaki, Kan Takeuchi, Mitsuru Hirakii, Toshihiro Tanaka, Yutaka Shinagawa, Masamichi Fujito
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Patent number: 6555882Abstract: A field-effect semiconductor element implemented with a fewer number of elements and a reduced area and capable of storing data by itself without need for cooling at a cryogenic temperature, and a memory device employing the same. Gate-channel capacitance is set so small that whether or not a trap captures one electron or hole can definitely and distinctively be detected in terms of changes of a current of the semiconductor FET element. By detecting a change in a threshold voltage of the semiconductor element brought about by trapping of electron or hole in the trap, data storage can be realized at a room temperature.Type: GrantFiled: August 31, 2001Date of Patent: April 29, 2003Assignees: Hitachi, Ltd., Hitachi Device Engineering Co., Ltd.Inventors: Kazuo Yano, Tomoyuki Ishii, Takashi Hashimoto, Koichi Seki, Masakazu Aoki, Takeshi Sakata, Yoshinobu Nakagome, Kan Takeuchi