Abstract: A method of reactive sputtering wherein inert gas and reactive gas are introduced into a reaction chamber provided with a pair of oppositely arranged electrodes, on one of which is placed a semiconductor substrate to be treated and a target material is placed on the other electrode, an RF power is applied to the latter electrode to generate plasma which activates the inert gas to eject silicon particles from the target material for reaction with nitrogen radical for forming a film of silicon nitride on the substrate, the invention improves the quality of the film as well as its growth rate by activating reactive gas before it is introduced into the reaction chamber. A microwave oscillator is used for activating the reactive gas, and the electrode on which the target material is placed comprises a magnetron.

Abstract: A selective oxidation process for producing a semiconductor device comprises the step of depositing a silicon oxynitride layer directly on a silicon substrate by a plasma chemical vapor deposition method. After a selective oxidation of the silicon substrate, the silicon oxynitride layer is removed.