Abstract: The present invention provides a power supply controlling module, which is suitable for a power supply controlling device. The power supply controlling device comprises a power source and a plurality of connecting ports. The power supply controlling module comprises a plurality of control units and a resistance. Each of the control units respectively connects with each of the connecting ports. The control units comprise a first control unit and at least one second control unit. The resistance electrically connects with the control units. The first control unit comprises a detecting circuit and a first control circuit, which respectively connects with the resistance. Each of the at least one second control unit comprises a second control circuit, which respectively connects with the resistance.

Abstract: A touch sensor apparatus includes a grid of intersecting sensor lines, a plurality of input/output (IO) pins, a plurality of diodes, a processor coupled to the IO pins. More specifically, each intersection includes a capacitor coupling together the intersecting sensor lines. Each diode is coupled to a corresponding IO pin, wherein each IO pin couples through its corresponding diode to a channel of intersection points of the sensor lines and, without the diode, each IO pin couples to a different channel of intersecting points of the sensor lines. The processor is configured to sequentially provide a transmit signal through each IO pin while detecting a response signal on the other IO pins.

Abstract: The present disclosure provides a method for recovering the efficacy of solar cell modules and a device thereof. The method includes providing a solar cell module and scanning the solar cell module with a light-beam. The light-beam has a power density between 20 W/cm2 and 200 W/cm2, a width between 1 mm and 156 mm. The light-beam scans a solar cell module with a scanning speed between 50 mm/sec and 200 mm/sec. Furthermore, the present disclosure also provides a portable device for recovering the efficacy of solar cell modules. The portable device includes two types such as placed type and hand-held type. The aforementioned devices can perform a hydrogenating process on solar cell modules to improve the degree of light-induced degradation (LID) so as to improve the photovoltaic conversion efficiency of solar cell modules.

Abstract: The present invention relates to a light emitting device comprising a transparent substrate which light can pass through and at least one LED chip emitting light omni-directionally. Wherein the LED chip is disposed on one surface of the substrate and the light emitting angle of the LED chip is wider than 180°, and the light emitted by the LED chip will penetrate into the substrate and at least partially emerge from another surface of the substrate. According to the present invention, the light emitting device using LED chips can provide sufficient lighting intensity and uniform lighting performance.

Abstract: A touch sensor apparatus includes a grid of intersecting sensor lines, a plurality of input/output (IO) pins, a plurality of diodes, a processor coupled to the IO pins. More specifically, each intersection includes a capacitor coupling together the intersecting sensor lines. Each diode is coupled to a corresponding IO pin, wherein each IO pin couples through its corresponding diode to a channel of intersection points of the sensor lines and, without the diode, each IO pin couples to a different channel of intersecting points of the sensor lines. The processor is configured to sequentially provide a transmit signal through each IO pin while detecting a response signal on the other IO pins.

Abstract: A light emitting device including a light emitting component is provided, wherein said light emitting comprising an integrated light emitting diode and a semiconductor field effect transistor. The semiconductor field effect transistor may prevent situations such as overheating and voltage instability by controlling a current passing through the light emitting diode as well as enhancing the ability to withstand electrostatic discharge and reducing cost of the light emitting device in multiple aspects.

Abstract: A semiconductor device has a semiconductor die mounted to a carrier. An encapsulant is deposited over the semiconductor die and carrier. The carrier is removed. A first insulating layer is formed over the encapsulant and semiconductor die. First vias are formed through the first insulating layer to expose contact pads of the semiconductor die. A first conductive layer is formed over the first insulating layer and into the first vias to electrically connect to the contact pads of the semiconductor die. A second insulating layer is formed over the first insulating layer and first conductive layer. Second vias are formed through the second insulating layer by laser direct ablation and aligned or offset with the first vias to expose the first conductive layer. A second conductive layer is formed over the second insulating layer and into the second vias. Conductive vias can be formed through the encapsulant.

Abstract: This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting diode, a metal bump, and a reflective insulation layer. The light-emitting diode includes an active layer, an insulation layer formed on the active layer and having a side surface, and a pad electrically connected to the active layer. The metal bump is formed on the pad. The reflective insulation layer covers the side surface.

Abstract: The present disclosure provides a buffer circuit comprising a plurality of operational amplifiers and a switch module. Each operational amplifier forms a buffer. The operational amplifier has an output stage. The stage has a first transistor and a second transistor. The first transistor and the second transistor are connected to an output terminal. The first transistor has a first control terminal. The second transistor has a second control terminal. The switch module is connected to the first control terminal of the first transistor and the second control terminal of the second transistor. The switch module connects together at least two of the first terminals of the first transistor according to a control signal. The switch module connects together at least two of the second terminals of the second transistor according to the control signal.

Abstract: A semiconductor light emitting element includes a transparent substrate and a plurality of light emitting diode (LED) chips. The transparent substrate has a support surface and a second main surface disposed opposite to each other. At least some of the LED structures are disposed on the support surface and form a first main surface where light emitted from with a part of the support surface without the LED structures. Each of the LED structures includes a first electrode and a second electrode. Light emitted from at least one of the LED structures passes through the transparent substrate and emerges from the second main surface. An illumination device includes the semiconductor light emitting element and a supporting base. The semiconductor light emitting element is disposed on the supporting base, and an angle is formed between the semiconductor light emitting element and the supporting base.

Abstract: A touch sensor apparatus includes a grid of intersecting sensor lines, a plurality of input/output (IO) pins, a plurality of diodes, a processor coupled to the IO pins. More specifically, each intersection includes a capacitor coupling together the intersecting sensor lines. Each diode is coupled to a corresponding IO pin, wherein each IO pin couples through its corresponding diode to a channel of intersection points of the sensor lines and, without the diode, each IO pin couples to a different channel of intersecting points of the sensor lines. The processor is configured to sequentially provide a transmit signal through each IO pin while detecting a response signal on the other IO pins.

Abstract: A light-emitting diode (LED) is provided. An LED die includes a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a first electrode and a second electrode. At least a part of the first semiconductor is exposed from the light emitting layer and the second semiconductor layer. The first electrode and the second electrode is disposed on top of the exposed first semiconductor layer and the second semiconductor layer respectively. At least two metal pads are disposed on top of the first electrode and the second electrode of the LED die respectively. Each of the metal pads has a side surface. A fluorescent layer is disposed on a surface of the LED die. The fluorescent layer directly contacts with the side surfaces of the metal pads and fills a gap between the metal pads.

Abstract: A method of manufacturing an oxynitride phosphor is revealed. A precursor is sintered under 0.1-1000 MPa nitrogen pressure for synthesis of an oxynitride phosphor. The general formula of the oxynitride phosphors is Ba3-XSi6O12N2:EuxBa3-XSi6O6N6:Eux or Ba3-XSi6O9N4:Eux (0.00001?x?5; 0.00001). Thus pure phosphor can be mass-produced.

Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a semiconductor substrate having a first region and a second region, forming a high-k dielectric layer over the semiconductor substrate, forming a capping layer over the high-k dielectric layer in the first region, forming a first metal layer over capping layer in the first region and over the high-k dielectric in the second region, thereafter, forming a first gate stack in the first region and a second gate stack in the second region, protecting the first metal layer in the first gate stack while performing a treatment process on the first metal layer in the second gate stack, and forming a second metal layer over the first metal layer in the first gate stack and over the treated first metal layer in the second gate stack.

Abstract: The present invention relates to a light emitting device comprising a transparent substrate which light can pass through and at least one LED chip emitting light omni-directionally. Wherein the LED chip is disposed on one surface of the substrate and the light emitting angle of the LED chip is wider than 180°, and the light emitted by the LED chip will penetrate into the substrate and at least partially emerge from another surface of the substrate. According to the present invention, the light emitting device using LED chips can provide sufficient lighting intensity and uniform lighting performance.

Abstract: A phase-locked loop circuit using a multi-curve voltage-controlled oscillator (VCO) having a set of operating curves, each operating curve corresponding to a different frequency range over a control voltage range. The phase-locked loop circuit includes a digital control circuit configured to generate a curve select signal using a closed loop curve search operation to select one of the operating curves in the multi-curve VCO, the selected operating curve being used by the VCO to generate an output signal with an output frequency being equal or close to a target frequency of the phase-locked loop. In one embodiment, the digital control circuit implements a binary jump method and an operating curve is selected when the operating curve has an output frequency meeting the target frequency with the control voltage being within a first voltage range being a narrowed and centered voltage range within the control voltage range.

Abstract: A light emitting device including a light emitting component is provided, wherein said light emitting comprising an integrated light emitting diode and a semiconductor field effect transistor. The semiconductor field effect transistor may prevent situations such as overheating and voltage instability by controlling a current passing through the light emitting diode as well as enhancing the ability to withstand electrostatic discharge and reducing cost of the light emitting device in multiple aspects.

Abstract: The present disclosure provides a buffer circuit comprising a plurality of operational amplifiers and a switch module. Each operational amplifier forms a buffer. The operational amplifier has an output stage. The stage has a first transistor and a second transistor. The first transistor and the second transistor are connected to an output terminal. The first transistor has a first control terminal. The second transistor has a second control terminal. The switch module is connected to the first control terminal of the first transistor and the second control terminal of the second transistor. The switch module connects together at least two of the first terminals of the first transistor according to a control signal. The switch module connects together at least two of the second terminals of the second transistor according to the control signal.

Abstract: A light-emitting diode (LED) chip including a first semiconductor layer; an active layer disposed on the first semiconductor layer; a second semiconductor layer disposed on said active layer; at least one indentation comprising a bottom part extending downward to reach the first semiconductor layer and exposing the first semiconductor layer; a first metal layer disposed on the second semiconductor layer, connecting to the first semiconductor layer at the bottom part of the indention; and an first insulating layer deposited on the second semiconductor layer and between the first metal layer and the second semiconductor layer to isolate the first metal layer from the second semiconductor layer.