Abstract: Disclosed are a cantilever-type near-field probe capable of easily improving an optical throughput and being applied to a head of an optical data storage and a method of manufacturing the same. An oxide film is formed on a silicon substrate having dielectric films formed as a mask layer on upper and lower portions thereof, and a circular dielectric film formed on the upper mask layer and providing a function of a holder. A distal end of the probe has a parabolic structure by use of an effect of a bird's peak provided due to a difference of growth rate of the oxide film produced by the dielectric film, thereby forming the initial probe. After the dielectric film is removed from the initial probe, a bottom surface of the silicon substrate is removed, thereby providing the probe with the near-field aperture having a high throughput.

Abstract: A method of manufacturing a head for recording and reading optical data. The method includes: providing a silicon substrate on which a silicon oxide film and a silicon deposition layer are stacked; etching the bottom of the silicon substrate by a given depth to form an opening; forming an aperture having a given slant angle in the silicon deposition layer located on the opening; etching the portion of the silicon oxide film, exposed through the opening; forming a dielectric layer on the silicon deposition layer including the aperture; removing an exposed portion of the bottom of the silicon deposition layer by a given thickness to expose a portion of the dielectric layer, forming a probe on the exposed portion of the dielectric layer and the silicon deposition layer exposed through the opening; and burying the aperture with a non-linear material.

Abstract: The present invention relates to an information storage medium and an optical device for reproducing information recorded in the information storage medium. In the information storage medium, the initial phase of any cell in the information layer is a crystal phase or an amorphous phase, and either of the two phases is changed into the other phase by electronic heating. Since reflectivity to incident light is different in accordance with phase of the cell, information recorded on the medium may be reproduced by using the above property.

Abstract: An apparatus capable of tracking a sample surface level in a z direction and oscillating a cantilever at resonant frequency by using a frequency separation scheme in non-contact mode and method thereof. The inventive apparatus includes a sensing unit for sensing a sample surface; a frequency transforming unit for transforming the sensed signal; a frequency combining unit for combining signals; and an actuating unit for actuating the sensing unit.

Abstract: The present invention relates to a head for recording/reading optical data and method of manufacturing the same. The present invention completely buries an aperture with a material a third non-linear coefficient of which is great in order to induce self-focusing. Thus, the present invention can reduce the amount of beam by about one half wavelength and focus the beam in a parabolic shape having almost no optical loss. Therefore, the present invention can improve the transmissivity of the probe by several hundreds times compared to a conventional optical fiver probe, by effectively exciting a near-field scanning optical microscopy for the aperture at an end portion of the probe.

Abstract: A micro-integrated probe type head and an optical recording system using the same for recording/reading-out high-density optical information in a near field recording (NFR) manner are provided. The provided micro-integrated probe type head and the optical recording system using the same use a concept of a head that records/reproduces the information by focusing a beam to a probe through a wave guide, a microlens, and a micro-mirror, and by detecting a reflected beam. In this case, the probe is formed by a silicon process to have an aperture with a size of tens of nanometers. By driving the head in a disk actuation structure, high-density near-field optical information having a recording size of 50 to 100 nm is recorded/reproduced at a high speed in a manner of possibly using a conventional tracking technology of an optical disk drive (ODD) or a hard disk drive (HDD).

Abstract: The present invention provides a technology of manufacturing and driving a high speed/high density optical storage system using one-dimensional multi-function/multiple probe columns. The present invention employs a scanning type multi-function probe to perform high-density data recording/reading in excess of a diffraction limit of light. Also, the present invention adopts a multiple probe array shape arranged in a row in order to be easily implemented with rotating disk media. Thus, as each of the probes divides data to perform recording/reading, the transfer rate of data can be increased by the number of the probes. Each of the probes is manufactured using electrical and thermal conductive materials and is attached to an AFM (atomic force microscopy) type cantilever. Thus, as a gap of the probes can be independently controlled, the probes can contact the media as necessary. Thereby, recording by light can be performed or recording can be performed using electricity or heat.

Abstract: In the apparatus for recording and reproducing high-density information using a multi-functional probe, media is locally heated not only by near-field optics come out of an aperture and but also by current induced from an end of an conducting cantilever, to record information and thereby increase a recording speed. The apparatus and method for recording and reproducing the high-density information using the multi-functional probe includes a conducting cantilever, in which a cantilever stage and a near-field optical aperture probe are formed in one body, the media is locally heated not only by the near-field optics from a near-field optical aperture probe but also by the current induced from the probe to the media or induced from the probe itself, and then the information is recorded; and an optical detector for reproducing the recorded information with a reflectivity of light come out of the near-field optical aperture probe or a transmission onto the media.

Abstract: This invention relates to a method for manufacturing silicon nitride films on a silicon substrate through chemical reaction of a surface, and then manufacturing a silicon nanometer structure using the silicon nitride films under ultra high vacuum condition. A method for manufacturing silicon nano structures using silicon nitride film, includes the following steps: performing a cleaning process of the silicon surface and implanting nitrogen ions having low energy into the silicon substrate; performing first heat treatment of the silicon substrate having ions implanted therin, and cooling the silicon substrate to room temperature to form monolayer thick silicon nitride islands; implanting oxygen gas on the silicon surface on which silicon nitride islands are used as masks while maintaining the surface of the silicon substrate at a temperature of 750 to 800.degree. C.

Abstract: This invention relates to a fabrication method of field emission device by using a carbon nano-tubes and, more particularly, to a fabrication method of field emission device by using the carbon nano-tubes, gathering much attention as a new material, as a field emission tips which have thin and stiff edges so that a threshold voltage required for emitting electron of the field emission device is to be lowered drastically. This invention provides a fabrication method of the field emission device using a thermally and chemically stable carbon nano-tubes, which have very stiff and nano-meter-thick edges, as a field emission tips so that the field emission device using the carbon nano-tubes as the tips, which have an excellent electron beam coherency, can emit electrons at a very low voltage and very stable during a long period.

Abstract: The present invention provides a metal semiconductor optical device which is capable of thinly uniformly growing a metal film on a semiconductor substrate using a layer functioning as an interface active agent and decreasing the density of interface energy state occurring between the metal thin film and the semiconductor, to thereby enhance the optical absorption efficiency of light beam. The interface single atomic layer is formed by one of the group V elements, e.g., one of antimony(Sb) or arsenic(As). Additionally, the metal thin film has a thickness of approximately 30 .ANG..

Abstract: A new conceptional transistor and a method for manufacturing, which increases the integration of semiconductor devices using conventional MOS devices are provided. The present invention provides a transistor in which a structure of metal-insulator film-metal dot-metal (MIMIM), metal-insulator film-metal dot-semiconductor (MIMS), or semiconductor-metal dot-semiconductor (SMS) is formed, using junction of electrodes operating as a source and a drain having a metal dot of nm therebetween, and the current flow between source and drain is controlled by controlling tunneling and Schottky barrier formed between the source and the metal dot using the method of controlling electrical potential of metal dot through charging effect of gate electrode isolated by a thick insulator.

Abstract: The present invention provides a method for making semiconductor nanometer-scale wire. The method comprises the steps of: forming a nitride film on a semiconductor substrate by implanting a nitrogen ions at a high temperature; forming a nitride film pattern with several nanometer line width and spaced by several nanometer therebetween by using an Atomic Force Microscope; forming a silicon oxide film by selectively thermal-oxidizing an exposed portion of the semiconductor substrate; removing the nitride film pattern by using the Atomic Force Microscope; forming a semiconductor layer by using Molecular Beam Epitaxy method on the surface of the silicon oxide film and on the surface of the semiconductor substrate exposed by removing the nitride film pattern; and selectively removing the silicon oxide film and the semiconductor layer on the surface of the silicon oxide film through thermal treatment.

Abstract: The present invention provides a method for forming a diamond selectively on the topmost part of a pointed tip by applying negative bias to the tip in a chemical vapor deposition system. High temperature tungsten filament is placed above the sharp tip, which is biased negatively to induce selective nucleation and growth of diamond on the topmost part of it.

Abstract: A method for the manufacture of a single electron transistor (SET) in a vacuum state, wherein the SET operates in room temperature, comprises the steps of: approaching an Au tip of a scanning tunneling microscopy (STM) on top of a silicon-substrate having a silicon oxide layer on top thereof to maintain a distance from top of the oxide layer to end of the Au tip of the STM; forming an Au cluster on top of the oxide layer by using a low field evaporation method employing the STM, thereby forming a two dimensional island structure on top of the oxide layer, wherein the low field evaporation method employing the STM generates an electronic pulse between top of the oxide layer and end of the Au tip of the STM by applying a voltage to the Au tip of the STM; forming a source and a drain to both sides of the Au cluster in the two dimensional island structure, respectively, in such a way that the Au cluster in the two dimensional island structure maintains a gap with the source and the drain, thereby forming an elect

Abstract: A surface adsorption apparatus for dissociating H.sub.2 molecules into atomic hydrogen in a vacuum vessel and adsorbing the atomic hydrogen on a sample surface is disclosed. A vacuum tube is mounted in the vacuum vessel. A nozzle is connected to the vacuum tube having a plurality of bent portions. A heating member receives electrical power from a power supply source and heats the nozzle to a predetermined temperature. A heat shielding member is located in a path of the atomic hydrogen between one end of the nozzle and the sample surface for shielding the sample surface from heat radiating from the nozzle. The H.sub.2 molecules collide with inner wall surfaces of the bent portions to be readily dissociate into the atomic hydrogen. The atomic dissociated hydrogen propagates toward the sample surface and is adsorbed on the sample surface. Since the nozzle comprises bent portions, H.sub.2 molecules frequently collide with inner wall surfaces of the nozzle to readily dissociate into atomic hydrogen. The H.sub.