Abstract: A Base Station (BS) antenna in a mobile communication system is provided, in which a reflective plate has a frontal surface onto which radiation elements are attached, and at least one protector is attached onto the reflective plate, surrounding at least part of the reflective plate.

Abstract: A water purifier includes a filter part to filter water, a storage part to store the water filtered by the filter part, and a separation unit to partition a space within the storage part into a plurality of spaces. A contact part is disposed between an inner surface of the storage part and the separation unit.

Abstract: A detergent case includes a remaining water discharge hole formed on a bottom surface of a liquid detergent accommodation space, and an opening and closing unit to open and close the remaining water discharge hole due to buoyancy of a liquid accommodated within the liquid detergent accommodation space.

Abstract: Disclosed is a radio frequency (RF) switch including: a circulator having first to third nodes, which are connected to first to third ports, respectively; and a slot line pattern unit installed in a connection line between the third node of the circulator and the third port so as to carry out signal transmission or interception, wherein the slot line pattern unit includes a switching circuit, which is installed at a predetermined location so as to transmit or intercept a signal by maintaining or short-circuiting a gap of a slot line corresponding to the installed location according to an external switching control signal.

Abstract: An image sensor and a method for manufacturing the same are disclosed. The image sensor can include a passivation layer on a substrate having a pad area and a pixel area, a color filter layer on the passivation layer over the pixel area, a first low temperature oxide layer on the substrate including the color filter layer, and a low temperature oxide layer microlens on the first low temperature oxide layer. The low temperature oxide layer microlens can include a seed microlens and a second low temperature oxide layer on the seed microlens. The seed microlens can be formed from the first low temperature oxide layer.

Abstract: A Base Station (BS) antenna in a mobile communication system is provided, in which a reflective plate has a frontal surface onto which radiation elements are attached, and at least one protector is attached onto the reflective plate, surrounding at least part of the reflective plate.

Abstract: Disclosed is a DPDT RF switch. The DPDT RF switch includes: first to fourth transmission lines for forming first to fourth ports, respectively; and first to fourth slot line pattern sections. The first slot line pattern section includes: a first slot line; and a first switching device for blocking signal transfer by short-circuiting a gap of a slot line. The third slot line pattern section includes: a third slot line; and a third switching device for blocking signal transfer by short-circuiting a gap of a slot line. The second slot line pattern section includes: a first loop-shaped slot line; a second slot line; and a second switching device for blocking signal transfer by short-circuiting a gap of a slot line. The fourth slot line pattern section includes: a second loop-shaped slot line; a fourth slot line; and a fourth switching device for blocking signal transfer by short-circuiting a gap of a slot line.

Abstract: An RF switch includes first, second and third transmission lines for forming ports, respectively, and first, second and third slot line pattern portions connected to one another, for transferring signals to the first, second and third transmission lines, respectively. The first slot line pattern portion has a slot line pattern for transferring a signal received from the first transmission line to a connection point with the other slot line pattern portions, and a switching circuit for shorting the gap of a corresponding slot line and thus blocking the signal transfer. The second slot line pattern portion includes a loop slot line formed by a first and a second half loop slot line, a second sub-slot line for transferring a signal received from the connection point to the second transmission line through the loop slot line, and a switching circuit for shorting the gap of a corresponding slot line.

Abstract: An image sensor includes a semiconductor substrate including a pixel region and a peripheral circuit region; interlayer insulating films including metal wires arranged on the pixel region and the peripheral circuit region; and a photodiode and an upper electrode disposed on the interlayer insulating film of the pixel region. Further, the image sensor includes a protective layer disposed on the semiconductor substrate including the upper electrode and the interlayer insulating film of the peripheral circuit region and having a sloping portion in a region corresponding to the sidewall of the photodiode; via holes disposed on the protective layer so as to selectively expose the upper electrode and the metal wires of the peripheral circuit region; and upper wiring disposed on the protective layer including the via holes.

Abstract: Disclosed is a radio frequency (RF) switch including: a circulator having first to third nodes, which are connected to first to third ports, respectively; and a slot line pattern unit installed in a connection line between the third node of the circulator and the third port so as to carry out signal transmission or interception, wherein the slot line pattern unit includes a switching circuit, which is installed at a predetermined location so as to transmit or intercept a signal by maintaining or short-circuiting a gap of a slot line corresponding to the installed location according to an external switching control signal.

Abstract: Disclosed is a DPDT RF switch. The DPDT RF switch includes: first to fourth transmission lines for forming first to fourth ports, respectively; and first to fourth slot line pattern sections. The first slot line pattern section includes: a first slot line; and a first switching device for blocking signal transfer by short-circuiting a gap of a slot line. The third slot line pattern section includes: a third slot line; and a third switching device for blocking signal transfer by short-circuiting a gap of a slot line. The second slot line pattern section includes: a first loop-shaped slot line; a second slot line; and a second switching device for blocking signal transfer by short-circuiting a gap of a slot line. The fourth slot line pattern section includes: a second loop-shaped slot line; a fourth slot line; and a fourth switching device for blocking signal transfer by short-circuiting a gap of a slot line.

Abstract: The present invention is directed to a method for fabricating a metal line of a semiconductor device. The method comprises the steps of forming an insulation layer, a metal layer and an organic anti-reflection coating in order on a semiconductor substrate on which devices or lower lines are formed, forming a photoresist pattern having an opening of certain width on the organic anti-reflection coating, forming a buffer layer of certain thickness on the photoresist pattern, and selectively removing the metal layer at a lower side of the opening by performing a dry etching process.

Abstract: An RF switch includes first, second and third transmission lines for forming ports, respectively, and first, second and third slot line pattern portions connected to one another, for transferring signals to the first, second and third transmission lines, respectively. The first slot line pattern portion has a slot line pattern for transferring a signal received from the first transmission line to a connection point with the other slot line pattern portions, and a switching circuit for shorting the gap of a corresponding slot line and thus blocking the signal transfer. The second slot line pattern portion includes a loop slot line formed by a first and a second half loop slot line, a second sub-slot line for transferring a signal received from the connection point to the second transmission line through the loop slot line, and a switching circuit for shorting the gap of a corresponding slot line.

Abstract: An RF switch is provided. In the RF switch, a T-junction slot line has a horizontal slot line and a vertical slot line. An open-end circuit is provided at each end portion of the horizontal and vertical slot lines. A first transmission line delivers signals from and to one portion of the horizontal slot line, and a second transmission line delivers signals from and to the other portion of the horizontal slot line. A third transmission line delivers signals from and to the vertical slot line. A switching circuit selectively switches the signal path of the one or the other portion of the horizontal slot line to the vertical slot line according to an external switching control signal.

Abstract: The present invention relates to a method of fabricating a MIM structure capacitor. The method includes sequentially depositing a nitride film, a Ti film, and a TiN film over a lower electrode metal layer, the nitride film being an insulating layer, and a combination of the Ti/TiN layers being a upper metal electrode, for the MIM structure capacitor. The method further includes coating a photoresist layer on the upper electrode metal layer and patterning the photoresist layer, then selectively etching the upper metal electrode layer, and the nitride film by using the patterned photoresist layer as an etch mask, and finally removing nitride remaining on sidewalls of the MIM structure capacitor through a wet cleaning process.

Abstract: An image sensor includes a semiconductor substrate including a pixel region and a peripheral circuit region; interlayer insulating films including metal wires arranged on the pixel region and the peripheral circuit region; and a photodiode and an upper electrode disposed on the interlayer insulating film of the pixel region. Further, the image sensor includes a protective layer disposed on the semiconductor substrate including the upper electrode and the interlayer insulating film of the peripheral circuit region and having a sloping portion in a region corresponding to the sidewall of the photodiode; via holes disposed on the protective layer so as to selectively expose the upper electrode and the metal wires of the peripheral circuit region; and upper wiring disposed on the protective layer including the via holes.

Abstract: A method of fabricating a semiconductor device is provided. A contact hole with a finer width can be formed by solving an exposure limit of KrF exposure apparatuses. The fabrication method includes forming a first insulation layer on a substrate; forming a photoresist pattern on the first insulation layer; forming a second insulation layer covering the photoresist pattern; forming a second insulation layer spacer in a sidewall of the photoresist pattern by etching the second insulation layer; forming a contact hole by etching the first insulation layer using the photoresist pattern and the second insulation layer spacer as a mask; removing the photoresist pattern; and removing the second insulation layer spacer.

Abstract: An image sensor according to an embodiment includes a semiconductor substrate including a photodiode; a protective layer pattern having a lower trench that is disposed on the semiconductor substrate to expose the photodiode; an insulating layer pattern having the upper trench that is disposed on the lower trench of the protective layer pattern to expose the photodiode; and a wave guide that is disposed in the lower trench and the upper trench.

Abstract: A method of fabricating a floating gate of a flash memory device is provided. The method includes: forming a tunneling oxide layer on a substrate; forming a conductive thin layer on the tunneling oxide layer; applying a photoresist on the conductive thin layer; defining a floating gate region by patterning the photoresist; forming polymer sidewalls on the sides of the patterned photoresist; and selectively removing the conductive thin layer using the photoresist and the polymer sidewalls as a mask to form a floating gate.

Abstract: An image sensor and a method for manufacturing the same are disclosed. The image sensor can include a passivation layer on a substrate having a pad area and a pixel area, a color filter layer on the passivation layer over the pixel area, a first low temperature oxide layer on the substrate including the color filter layer, and a low temperature oxide layer microlens on the first low temperature oxide layer. The low temperature oxide layer microlens can include a seed microlens and a second low temperature oxide layer on the seed microlens. The seed microlens can be formed from the first low temperature oxide layer.