Patents by Inventor Kang L. Wang

Kang L. Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160099035
    Abstract: Voltage controlled magnetic tunnel junctions and memory devices are described which provide efficient high speed switching of non-volatile magnetic devices at high cell densities. Implementations are described which provide a wide range of voltage control alternatives with in-plane and perpendicular magnetization, bidirectionally switched magnetization, and control of domain wall dynamics.
    Type: Application
    Filed: December 14, 2015
    Publication date: April 7, 2016
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Pedram Khalili Amiri, Kang L. Wang, Kosmas Galatsis
  • Patent number: 9300251
    Abstract: A frequency conversion device, which may include a radiofrequency (RF) mixer device, includes a substrate and a ferromagnetic film disposed over a surface of the substrate. An insulator is disposed over the ferromagnetic film and at least one microstrip antenna is disposed over the insulator. The ferromagnetic film provides a non-linear response to the frequency conversion device. The frequency conversion device may be used for signal mixing and amplification. The frequency conversion device may also be used in data encryption applications.
    Type: Grant
    Filed: March 14, 2008
    Date of Patent: March 29, 2016
    Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Alexander Khitun, Igor V. Roshchin, Kosmas Galatsis, Mingqiang Bao, Kang L. Wang
  • Publication number: 20160027842
    Abstract: Embodiments of the technology implement DIOMEJ cells. In one embodiment, a DIOMEJ cell includes: an MEJ that includes, a ferromagnetic fixed layer, a ferromagnetic free layer, and a dielectric layer interposed between the fixed and free layers, where the fixed layer is magnetically polarized in a first direction, where the free layer has a first easy axis that is aligned with the first direction, and where the MEJ is configured such that when a potential difference is applied across it, the magnetic anisotropy of the free layer is altered such that the relative strength of the magnetic anisotropy along a second easy axis that is orthogonal to the first easy axis, as compared to the strength of the magnetic anisotropy along the first easy axis, is magnified for the duration of the application of the potential difference; and a diode, where the diode and the MEJ are arranged in series.
    Type: Application
    Filed: July 28, 2015
    Publication date: January 28, 2016
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Pedram Khalili Amiri, Kang L. Wang
  • Publication number: 20150332749
    Abstract: Voltage controlled magnetic tunnel junctions and memory devices are described which provide efficient high speed switching of non-volatile magnetic devices at high cell densities. Implementations are described which provide a wide range of voltage control alternatives with in-plane and perpendicular magnetization, bidirectionally switched magnetization, and control of domain wall dynamics.
    Type: Application
    Filed: July 30, 2015
    Publication date: November 19, 2015
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Pedram Khalili Amiri, Kang L. Wang, Kosmas Galatsis
  • Patent number: 9129691
    Abstract: Voltage controlled magnetic tunnel junctions and memory devices are described which provide efficient high speed switching of non-volatile magnetic devices at high cell densities. Implementations are described which provide a wide range of voltage control alternatives with in-plane and perpendicular magnetization, bidirectionally switched magnetization, and control of domain wall dynamics.
    Type: Grant
    Filed: November 16, 2013
    Date of Patent: September 8, 2015
    Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Pedram Khalili Amiri, Kang L. Wang, Kosmas Galatsis
  • Patent number: 9099641
    Abstract: Embodiments of the invention implement MEJs having improved read-write characteristics. In one embodiment, an MEJ includes: ferromagnetic fixed and free layers, a dielectric layer interposed between the ferromagnetic layers, and an additional dielectric layer proximate the free layer, where the fixed layer is magnetically polarized in a first direction, where the free layer has a first easy axis that is aligned with the first direction, and where the MEJ is configured such that when subject to a potential difference, the magnetic anisotropy of the free layer is altered such that the relative strength of the magnetic anisotropy along a second easy axis that is orthogonal to the first easy axis, compared to the strength of the magnetic anisotropy along the first easy axis, is magnified during the application of the potential difference, where the extent of the magnification is enhanced by the presence of the additional layer.
    Type: Grant
    Filed: November 6, 2013
    Date of Patent: August 4, 2015
    Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Pedram Khalili Amiri, Kang L. Wang
  • Patent number: 9048329
    Abstract: An integrated circuit device includes a transistor array having a vertical stack of independently controllable gate electrodes therein. A first semiconductor channel region is provided, which extends on a first sidewall of the vertical stack of independently controllable gate electrodes. A first electrically insulating layer is also provided, which extends between the first semiconductor channel region and the first sidewall of the vertical stack of independently controllable gate electrodes. Source and drain regions are provided, which are electrically coupled to first and second ends of the first semiconductor channel region, respectively.
    Type: Grant
    Filed: September 12, 2013
    Date of Patent: June 2, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ji-Young Kim, Kang L. Wang, Yong-Jik Park, Jeong-Hee Han, Augustin Jinwoo Hong
  • Patent number: 9047950
    Abstract: Voltage controlled magnetoelectric tunnel junction (MEJ) based content addressable memory is described which provides efficient high speed switching of MEJs toward eliminating any read disturbance of written data. Each cell of said CAM having two MEJs and transistor circuitry for performing a write at voltages of a first polarity, and reads at voltages of a second polarity. If the data searched does not equal the data written in the CAM, then the match line state is changed.
    Type: Grant
    Filed: August 30, 2013
    Date of Patent: June 2, 2015
    Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Pedram Khalili Amiri, Richard Dorrance, Dejan Markovic, Kang L. Wang
  • Publication number: 20150137292
    Abstract: A nanoscale tunnel magneto-resistance (TMR) sensor comprising an in-plane-magnetized reference layer and a free layer comprising interfacial perpendicular anisotropy, wherein the free layer comprises a sensing layer for sensing resistance as a function of applied magnetic field and is tunable to vary the direction of the sensing layer magnetization to be in-plane, canted, or out-of-plane.
    Type: Application
    Filed: January 27, 2015
    Publication date: May 21, 2015
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Pedram Khalili Amiri, Zhongming Zeng, Kang L. Wang
  • Patent number: 9036407
    Abstract: A memory cell including information that is stored in the state of a magnetic bit (i.e. in a free layer, FL), where the FL magnetization has two stable states that may be canted (form an angle) with respect to the horizontal and vertical directions of the device is presented. The FL magnetization may be switched between the two canted states by the application of a voltage (i.e. electric field), which modifies the perpendicular magnetic anisotropy of the free layer.
    Type: Grant
    Filed: December 9, 2013
    Date of Patent: May 19, 2015
    Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Kang L. Wang, Pedram Khalili Amiri, Juan G. Alzate
  • Publication number: 20150129995
    Abstract: A basic Spin-Orbit-Torque (SOT) structure with lateral structural asymmetry is provided that produces a new spin-orbit torque, resulting in zero-field current-induced switching of perpendicular magnetization. More complex structures can also be produced incorporating the basic structure of a ferromagnetic layer with a heavy non-magnetic metal layer having strong spin-orbit coupling on one side, and an insulator layer on the other side with a structural mirror asymmetry along the in-plane direction. The lateral structural asymmetry and new spin-orbit torque, in effect, replaces the role of the external in-plane magnetic field. The direction of switching is determined by the combination of the direction of applied current and the direction of symmetry breaking in the device.
    Type: Application
    Filed: October 30, 2014
    Publication date: May 14, 2015
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Kang L. Wang, Pedram Khalili Amiri, Guoqiang Yu, Pramey Upadhyaya
  • Patent number: 8988923
    Abstract: Voltage controlled magneto-electric tunnel junctions (MEJ) and associated memory devices are described which provide efficient high speed switching of non-volatile magnetic random access memory (MeRAM) devices at high cell densities with multiple word access mechanisms, including a burst mode write of multiple words, and a back-to-back read of two words in consecutive clock cycles. In at least one preferred embodiment, these accesses are performed in a manner that prevents any possibility of a read disturbance arising.
    Type: Grant
    Filed: August 30, 2013
    Date of Patent: March 24, 2015
    Assignee: The Regents of the University of California
    Inventors: Pedram Khalili Amiri, Richard Dorrance, Dejan Markovic, Kang L. Wang
  • Patent number: 8841739
    Abstract: Embodiments of the invention implement DIOMEJ cells. In one embodiment, a DIOMEJ cell includes: an MEJ that includes, a ferromagnetic fixed layer, a ferromagnetic free layer, and a dielectric layer interposed between said fixed and free layers, where the fixed layer is magnetically polarized in a first direction, where the free layer has a first easy axis that is aligned with the first direction, and where the MEJ is configured such that when a potential difference is applied across it, the magnetic anisotropy of the free layer is altered such that the relative strength of the magnetic anisotropy along a second easy axis that is orthogonal to the first easy axis, as compared to the strength of the magnetic anisotropy along the first easy axis, is magnified for the duration of the application of the potential difference; and a diode, where the diode and the MEJ are arranged in series.
    Type: Grant
    Filed: September 9, 2013
    Date of Patent: September 23, 2014
    Assignee: The Regents of the University of California
    Inventors: Pedram Khalili Amiri, Kang L. Wang
  • Publication number: 20140177327
    Abstract: Voltage controlled magnetic tunnel junctions and memory devices are described which provide efficient high speed switching of non-volatile magnetic devices at high cell densities. Implementations are described which provide a wide range of voltage control alternatives with in-plane and perpendicular magnetization, bidirectionally switched magnetization, and control of domain wall dynamics.
    Type: Application
    Filed: November 16, 2013
    Publication date: June 26, 2014
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Pedram Khalili Amiri, Kang L. Wang, Kosmas Galatsis
  • Publication number: 20140169085
    Abstract: A memory cell including information that is stored in the state of a magnetic bit (i.e. in a free layer, FL), where the FL magnetization has two stable states that may be canted (form an angle) with respect to the horizontal and vertical directions of the device is presented. The FL magnetization may be switched between the two canted states by the application of a voltage (i.e. electric field), which modifies the perpendicular magnetic anisotropy of the free layer.
    Type: Application
    Filed: December 9, 2013
    Publication date: June 19, 2014
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Kang L. Wang, Pedram Khalili Amiri, Juan G. Alzate
  • Patent number: 8735161
    Abstract: The disclosure provides sensor for gas sensing including CO2 gas sensors comprising a porous framework sensing area for binding an analyte gas.
    Type: Grant
    Filed: July 8, 2013
    Date of Patent: May 27, 2014
    Assignees: The Regents of the University of California, BASF SE
    Inventors: Omar M. Yaghi, Alexander U. Czaja, Bo Wang, Kosmas Galatsis, Kang L. Wang, Hiroyasu Furukawa
  • Publication number: 20140124882
    Abstract: Embodiments of the invention implement MEJs having improved read-write characteristics. In one embodiment, an MEJ includes: ferromagnetic fixed and free layers, a dielectric layer interposed between the ferromagnetic layers, and an additional dielectric layer proximate the free layer, where the fixed layer is magnetically polarized in a first direction, where the free layer has a first easy axis that is aligned with the first direction, and where the MEJ is configured such that when subject to a potential difference, the magnetic anisotropy of the free layer is altered such that the relative strength of the magnetic anisotropy along a second easy axis that is orthogonal to the first easy axis, compared to the strength of the magnetic anisotropy along the first easy axis, is magnified during the application of the potential difference, where the extent of the magnification is enhanced by the presence of the additional layer.
    Type: Application
    Filed: November 6, 2013
    Publication date: May 8, 2014
    Applicant: Inston, Inc.
    Inventors: Pedram Khalili Amiri, Kang L. Wang
  • Publication number: 20140071728
    Abstract: Voltage controlled magnetoelectric tunnel junction (MEJ) based content addressable memory is described which provides efficient high speed switching of MEJs toward eliminating any read disturbance of written data. Each cell of said CAM having two MEJs and transistor circuitry for performing a write at voltages of a first polarity, and reads at voltages of a second polarity. If the data searched does not equal the data written in the CAM, then the match line state is changed.
    Type: Application
    Filed: August 30, 2013
    Publication date: March 13, 2014
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Pedram Khalili Amiri, Richard Dorrance, Dejan Markovic, Kang L. Wang
  • Publication number: 20140071732
    Abstract: Voltage controlled magneto-electric tunnel junctions (MEJ) and associated memory devices are described which provide efficient high speed switching of non-volatile magnetic random access memory (MeRAM) devices at high cell densities with multiple word access mechanisms, including a burst mode write of multiple words, and a back-to-back read of two words in consecutive clock cycles. In at least one preferred embodiment, these accesses are performed in a manner that prevents any possibility of a read disturbance arising.
    Type: Application
    Filed: August 30, 2013
    Publication date: March 13, 2014
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Pedram Khalili Amiri, Richard Dorrance, Dejan Markovic, Kang L. Wang
  • Publication number: 20140070344
    Abstract: Embodiments of the invention implement DIOMEJ cells. In one embodiment, a DIOMEJ cell includes: an MEJ that includes, a ferromagnetic fixed layer, a ferromagnetic free layer, and a dielectric layer interposed between said fixed and free layers, where the fixed layer is magnetically polarized in a first direction, where the free layer has a first easy axis that is aligned with the first direction, and where the MEJ is configured such that when a potential difference is applied across it, the magnetic anisotropy of the free layer is altered such that the relative strength of the magnetic anisotropy along a second easy axis that is orthogonal to the first easy axis, as compared to the strength of the magnetic anisotropy along the first easy axis, is magnified for the duration of the application of the potential difference; and a diode, where the diode and the MEJ are arranged in series.
    Type: Application
    Filed: September 9, 2013
    Publication date: March 13, 2014
    Applicant: The Regents of the University of California
    Inventors: Pedram Khalili Amiri, Kang L. Wang