Patents by Inventor Kang Sub Yim

Kang Sub Yim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10553427
    Abstract: Embodiments described herein generally relate to methods of manufacturing an oxide/polysilicon (OP) stack of a 3D memory cell for memory devices, such as NAND devices. The methods generally include treatment of the oxide and/or polysilicon materials with precursors during PECVD processes to lower the dielectric constant of the oxide and reduce the resistivity of the polysilicon. In one embodiment, the oxide material is treated with octamethylcyclotetrasiloxane (OMCTS) precursor. In another embodiment, germane (GeH4) is introduced to a PECVD process to form SixGe(1-x) films with dopant. In yet another embodiment, a plasma treatment process is used to nitridate the interface between layers of the OP stack. The precursors and plasma treatment may be used alone or in any combination to produce OP stacks with low dielectric constant oxide and low resistivity polysilicon.
    Type: Grant
    Filed: April 20, 2018
    Date of Patent: February 4, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Xinhai Han, Kang Sub Yim, Zhijun Jiang, Deenesh Padhi
  • Publication number: 20180315592
    Abstract: Embodiments described herein generally relate to methods of manufacturing an oxide/polysilicon (OP) stack of a 3D memory cell for memory devices, such as NAND devices. The methods generally include treatment of the oxide and/or polysilicon materials with precursors during PECVD processes to lower the dielectric constant of the oxide and reduce the resistivity of the polysilicon. In one embodiment, the oxide material is treated with octamethylcyclotetrasiloxane (OMCTS) precursor. In another embodiment, germane (GeH4) is introduced to a PECVD process to form SixGe(1-x) films with dopant. In yet another embodiment, a plasma treatment process is used to nitridate the interface between layers of the OP stack. The precursors and plasma treatment may be used alone or in any combination to produce OP stacks with low dielectric constant oxide and low resistivity polysilicon.
    Type: Application
    Filed: April 20, 2018
    Publication date: November 1, 2018
    Inventors: Xinhai HAN, Kang Sub YIM, Zhijun JIANG, Deenesh PADHI
  • Patent number: 10113234
    Abstract: Embodiments described herein provide a method for sealing a porous low-k dielectric film. The method includes forming a sealing layer on the porous low-k dielectric film using a cyclic process. The cyclic process includes repeating a sequence of depositing a sealing layer on the porous low-k dielectric film and treating the sealing layer until the sealing layer achieves a predetermined thickness. The treating of each intermediate sealing layer generates more reactive sites on the surface of each intermediate sealing layer, which improves the quality of the resulting sealing layer.
    Type: Grant
    Filed: July 16, 2015
    Date of Patent: October 30, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Bo Xie, Alexandros T. Demos, Vu Ngoc Tran Nguyen, Kelvin Chan, He Ren, Kang Sub Yim, Mehul B. Naik
  • Patent number: 9850574
    Abstract: A low-k dielectric porous silicon oxycarbon layer is formed within an integrated circuit. In one embodiment, a porogen and bulk layer containing silicon oxycarbon layer is deposited, the porogens are selectively removed from the formed layer without simultaneously cross-linking the bulk layer, and then the bulk layer material is cross-linked. In other embodiments, multiple silicon oxycarbon sublayers are deposited, porogens from each sub-layer are selectively removed without simultaneously cross-linking the bulk material of the sub-layer, and the sub-layers are cross-linked separately.
    Type: Grant
    Filed: February 16, 2015
    Date of Patent: December 26, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Taewan Kim, Kang Sub Yim, Alexandros T. Demos
  • Patent number: 9659765
    Abstract: Embodiments described herein generally relate to methods for processing a dielectric film on a substrate with UV energy. In one embodiment, a precursor film is deposited on the substrate, and the precursor film includes a plurality of porogen molecules. The precursor film is first exposed to UV energy at a first temperature to initiate a cross-linking process. After a first predetermined time, the temperature of the precursor film is increased to a second temperature for a second predetermined time to remove porogen molecules and to continue the cross-linking process. The resulting film is a porous low-k dielectric film having improved elastic modulus and hardness.
    Type: Grant
    Filed: July 15, 2015
    Date of Patent: May 23, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Kang Sub Yim, Mahendra Chhabra, Kelvin Chan, Alexandros T. Demos, Priyanka Dash
  • Publication number: 20170125241
    Abstract: Methods of single precursor deposition of hardmask and ARC layers, are described. The resultant film is a SiOC layer with higher carbon content terminated with high density silicon oxide SiO2 layer with low carbon content. The method can include delivering a first deposition precursor to a substrate, the first deposition precursor comprising an SiOC precursor and a first flow rate of an oxygen containing gas; activating the deposition species using a plasma, whereby a SiOC containing layer over an exposed surface of the substrate is deposited. Then delivering a second precursor gas to the SiOC containing layer, the second deposition gas comprising different or same SiOC precursor with a second flow rate and a second flow rate of the oxygen containing gas and activating the deposition gas using a plasma, the second deposition gas forming a SiO2 containing layer over the hardmask, the SiO2 containing layer having very low carbon.
    Type: Application
    Filed: March 18, 2016
    Publication date: May 4, 2017
    Inventors: Shaunak MUKHERJEE, Kang Sub YIM, Deenesh PADHI, Kevin M. CHO, Khoi Anh PHAN, Chien-An CHEN, Priyanka DASH
  • Patent number: 9478460
    Abstract: Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. Embodiments described herein control selectivity of deposition by preventing damage to the dielectric surface, repairing damage to the dielectric surface, such as damage which can occur during the cobalt deposition process, and controlling deposition parameters for the cobalt layer.
    Type: Grant
    Filed: August 10, 2015
    Date of Patent: October 25, 2016
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Mei-yee Shek, Weifeng Ye, Li-Qun Xia, Kang Sub Yim, Kelvin Chan
  • Patent number: 9391024
    Abstract: Embodiments of the disclosure generally provide multi-layer dielectric stack configurations that are resistant to plasma damage. Methods are disclosed for the deposition of thin protective low dielectric constant layers upon bulk low dielectric constant layers to create the layer stack. As a result, the dielectric constant of the multi-layer stack is unchanged during and after plasma processing.
    Type: Grant
    Filed: September 10, 2015
    Date of Patent: July 12, 2016
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Bo Xie, Kang Sub Yim, Cheng Pan, Sure Ngo, Taewan Kim, Alexandros T. Demos
  • Publication number: 20160141203
    Abstract: Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. Embodiments described herein control selectivity of deposition by preventing damage to the dielectric surface, repairing damage to the dielectric surface, such as damage which can occur during the cobalt deposition process, and controlling deposition parameters for the cobalt layer.
    Type: Application
    Filed: August 10, 2015
    Publication date: May 19, 2016
    Inventors: MEI-YEE SHEK, Weifeng Ye, Li-Qun Xia, Kang Sub Yim, Kelvin Chan
  • Patent number: 9324571
    Abstract: A method and apparatus for depositing a low K dielectric film with one or more features is disclosed herein. A method of forming a dielectric layer can include positioning a substrate in a processing chamber, delivering a deposition gas to the processing chamber, depositing a dense organosilicon layer using the deposition gas on the surface of the substrate, the dense organosilicon layer comprising a porogenic carbon, transferring a pattern into the dense organosilicon layer, forming a pore-forming plasma from a reactant gas, exposing the dense organosilicon layer to the pore-forming plasma to create a porous organosilicon layer, wherein the pore-forming plasma removes at least a portion of the porogenic carbon and exposing the porous organosilicon layer to a desiccating post treatment.
    Type: Grant
    Filed: February 4, 2014
    Date of Patent: April 26, 2016
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Kang Sub Yim, Pendar Ardalan, Sure Ngo, Alexandros T. Demos
  • Publication number: 20160111373
    Abstract: Embodiments of the disclosure generally provide multi-layer dielectric stack configurations that are resistant to plasma damage. Methods are disclosed for the deposition of thin protective low dielectric constant layers upon bulk low dielectric constant layers to create the layer stack. As a result, the dielectric constant of the multi-layer stack is unchanged during and after plasma processing.
    Type: Application
    Filed: September 10, 2015
    Publication date: April 21, 2016
    Inventors: Bo XIE, Kang Sub YIM, Cheng PAN, Sure NGO, Taewan KIM, Alexandros T. DEMOS
  • Patent number: 9312167
    Abstract: Methods for reducing the k value of a layer using air gaps and devices produced by said methods are disclosed herein. Methods disclosed herein can include depositing a carbon containing stack over one or more features in a substrate, depositing a porous dielectric layer over the carbon containing stack, and curing the substrate to volatilize the carbon containing stack. The resulting device includes a substrate with one or more features formed therein, a porous dielectric layer formed over the features with an air gap formed in the features.
    Type: Grant
    Filed: October 3, 2014
    Date of Patent: April 12, 2016
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Taewan Kim, Kang Sub Yim, Alexandros T. Demos
  • Publication number: 20160099167
    Abstract: Methods for reducing the k value of a layer using air gaps and devices produced by said methods are disclosed herein. Methods disclosed herein can include depositing a carbon containing stack over one or more features in a substrate, depositing a porous dielectric layer over the carbon containing stack, and curing the substrate to volatilize the carbon containing stack. The resulting device includes a substrate with one or more features formed therein, a porous dielectric layer formed over the features with an air gap formed in the features.
    Type: Application
    Filed: October 3, 2014
    Publication date: April 7, 2016
    Inventors: Taewan KIM, Kang Sub YIM, Alexandros T. DEMOS
  • Publication number: 20160020090
    Abstract: Embodiments described herein generally relate to methods for processing a dielectric film on a substrate with UV energy. In one embodiment, a precursor film is deposited on the substrate, and the precursor film includes a plurality of porogen molecules. The precursor film is first exposed to UV energy at a first temperature to initiate a cross-linking process. After a first predetermined time, the temperature of the precursor film is increased to a second temperature for a second predetermined time to remove porogen molecules and to continue the cross-linking process. The resulting film is a porous low-k dielectric film having improved elastic modulus and hardness.
    Type: Application
    Filed: July 15, 2015
    Publication date: January 21, 2016
    Inventors: Kang Sub YIM, Mahendra CHHABRA, Kelvin CHAN, Alexandros T. DEMOS, Priyanka DASH
  • Publication number: 20160017495
    Abstract: Embodiments disclosed herein generally include methods for forming porous low k dielectric films. In one embodiment, a method of forming a porous low k dielectric film on a substrate using PECVD and in situ radical curing in a processing chamber is disclosed. The method includes introducing radicals into a processing region of the processing chamber, introducing a gas mixture into the processing region of the processing chamber, forming a plasma in the processing region and depositing the porous low k dielectric film on the substrate.
    Type: Application
    Filed: July 15, 2015
    Publication date: January 21, 2016
    Inventors: Yihong CHEN, Kelvin CHAN, Martin Jay SEAMONS, Shaunak MUKHERJEE, Abhijit Basu MALLICK, Jianhua ZHOU, Kang Sub YIM
  • Publication number: 20160017492
    Abstract: Embodiments described herein provide a method for sealing a porous low-k dielectric film. The method includes forming a sealing layer on the porous low-k dielectric film using a cyclic process. The cyclic process includes repeating a sequence of depositing a sealing layer on the porous low-k dielectric film and treating the sealing layer until the sealing layer achieves a predetermined thickness. The treating of each intermediate sealing layer generates more reactive sites on the surface of each intermediate sealing layer, which improves the quality of the resulting sealing layer.
    Type: Application
    Filed: July 16, 2015
    Publication date: January 21, 2016
    Inventors: Bo XIE, Alexandros T. DEMOS, Vu Ngoc Tran NGUYEN, Kelvin CHAN, He REN, Kang Sub YIM, Mehul B. NAIK
  • Publication number: 20150380265
    Abstract: A method and apparatus for depositing a low K dielectric film with one or more features is disclosed herein. A method of forming a dielectric layer can include positioning a substrate in a processing chamber, delivering a deposition gas to the processing chamber, depositing a dense organosilicon layer using the deposition gas on the surface of the substrate, the dense organosilicon layer comprising a porogenic carbon, transferring a pattern into the dense organosilicon layer, forming a pore-forming plasma from a reactant gas, exposing the dense organosilicon layer to the pore-forming plasma to create a porous organosilicon layer, wherein the pore-forming plasma removes at least a portion of the porogenic carbon and exposing the porous organosilicon layer to a desiccating post treatment.
    Type: Application
    Filed: February 4, 2014
    Publication date: December 31, 2015
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Kang Sub YIM, Pendar ARDALAN, Sure NGO, Alexandros T. DEMOS
  • Publication number: 20150368803
    Abstract: A low k porous dielectric film with improved mechanical strength and methods for making the same are disclosed herein. A method of forming a dielectric layer can include positioning a substrate in a processing chamber, delivering a deposition gas to the processing chamber, depositing a dense organosilicon layer using the deposition gas on the surface of the substrate, the dense organosilicon layer comprising a porogenic carbon, forming a pore-forming plasma from a reactant gas, exposing the dense organosilicon layer to the pore-forming plasma to create a porous organosilicon layer, wherein the pore-forming plasma removes at least a portion of the porogenic carbon and exposing the porous organosilicon layer to ultraviolet (UV) radiation.
    Type: Application
    Filed: February 13, 2014
    Publication date: December 24, 2015
    Inventors: Kang Sub YIM, Mahendra CHHABRA, Alexandros T. DEMOS
  • Patent number: 9165998
    Abstract: Embodiments of the present invention provide a film stack and method for depositing an adhesive layer for a low dielectric constant bulk layer without the need for an initiation layer. A film stack for use in a semiconductor device comprises of a dual layer low-K dielectric deposited directly on an underlying layer. The dual low-K dielectric consists of an adhesive layer deposited without a carbon free initiation layer.
    Type: Grant
    Filed: March 14, 2014
    Date of Patent: October 20, 2015
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Kang Sub Yim, Pendar Ardalan, Sure Ngo, Alexandros T. Demos
  • Publication number: 20150284849
    Abstract: Methods for making a low k porous dielectric film with improved mechanical strength are disclosed herein. A method of forming a dielectric layer can include delivering a deposition gas to a substrate in a processing chamber, the deposition gas comprising an acrylate precursor with a UV active side group and an oxygen containing precursor; activating the deposition gas to deposit an uncured carbon-containing layer on a surface of the substrate; and delivering UV radiation to the uncured carbon-containing layer to create a cured carbon-containing layer, the UV active side group crosslinking with a second group.
    Type: Application
    Filed: March 13, 2015
    Publication date: October 8, 2015
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Kang Sub YIM, Taewan KIM, Alexandros T. DEMOS