Publication number: 20200303919
Abstract: Provided are a differential protection method and system, applied to a multi-terminal T-connection transmission line. The method includes: selecting two slaves without a connection and connecting the two slaves to construct a slave group; determining a target slave and an auxiliary slave in the slave group, where a first communication path is connected along a channel one, a channel two and a channel three, and a second communication path is connected along the channel three, the channel two and the channel one; transmitting, by the target slave, two frames of messages, and acquiring a delay difference between a transceiving delay of the first communication path and a transceiving delay of the second communication path, where a first frame of messages is transmitted to the target slave via the first communication path, a second frame of messages is transmitted to the target slave via the second communication path.
Type:
Application
Filed:
December 27, 2018
Publication date:
September 24, 2020
Applicants:
TAIZHOU POWER SUPPLY COMPANY OF STATE GRID ZHEJIANG ELECTRIC POWER, STATE GRID CORPORATION OF CHINA
Inventors:
Ping ZHAO, Yiping SHEN, Yutao QIU, Hua XU, Hao TAN, Rijun WANG, Yuande ZHENG, Hao LI, Zaibing ZHOU, Guode YING, Kang WANG, Jian WU, Tao ZHU, Ben LI, Xiaochun XU, Qingchun ZHAO, Xiaotong ZHU, Zhen HUANG
Publication number: 20200279995
Abstract: A magnetic tunnel junction with perpendicular magnetic anisotropy (PMA MTJ) is disclosed wherein a free layer interfaces with a tunnel barrier and has a second interface with an oxide layer. A lattice-matching layer adjoins an opposite side of the oxide layer with respect to the free layer and is comprised of CoXFeYNiZLWMV or an oxide or nitride of Ru, Ta, Ti, or Si, wherein L is one of B, Zr, Nb, Hf, Mo, Cu, Cr, Mg, Ta, Ti, Au, Ag, or P, and M is one of Mo, Mg, Ta, Cr, W, or V, (x+y+z+w+v)=100 atomic %, x+y>0, and each of v and w are >0. The lattice-matching layer grows a BCC structure during annealing thereby promoting BCC structure growth in the oxide layer that results in enhanced free layer PMA and improved thermal stability.
Type:
Application
Filed:
May 18, 2020
Publication date:
September 3, 2020
Inventors:
Huanlong Liu, Yuan-Jen Lee, Jian Zhu, Guenole Jan, Luc Thomas, Po-Kang Wang, Ru-Ying Tong, Jodi Iwata