Abstract: A light-emitting diode chip includes a substrate. The substrate has a side surface configured as a serrated surface, which includes a plurality of laser inscribed features disposed along a thickness direction of the substrate and spaced apart from each other. A method for manufacturing the light-emitting diode chip is also disclosed herein.

Abstract: A light-emitting diode includes a semiconductor layer sequence. The semiconductor layer sequence includes a first semiconductor layer, a second semiconductor layer and an active layer, and further includes a first mesa and a second mesa. The first mesa has a current blocking structure adjacent to the second mesa and a current conduction portion located below the current blocking structure. The first semiconductor has a first surface facing away from the active layer, the first mesa is provided with a second surface facing away from the first surface, a distance between the second surface and the first surface is greater than or equal to a half of a thickness of the first semiconductor layer, and the current conduction portion has a height in a thickness direction of the semiconductor layer sequence being ? to ½ of the thickness of the first semiconductor layer. The light-emitting diode can improve carrier injection efficiency.

Abstract: An integrated circuit includes a first transistor coupled between a power input and a power output, the first transistor being an N-type transistor and having a first transistor control input; a first amplifier stage having a reference input, a feedback input, and a first amplifier output, the feedback input coupled to the power output; a second amplifier stage having an amplifier input and a second amplifier output, the amplifier input coupled to the first amplifier output, and the second amplifier output coupled to the first transistor control input; and a first biasing circuit coupled to the first transistor control input, the first biasing circuit having an electrical control input coupled to the power output.

Abstract: An example apparatus includes: first circuitry configured to verify a set of reference voltages is stable; and second circuitry including a first transistor, a second transistor, a first number of parallel transistors, and a second number of parallel transistors, the second circuitry configured to, in response to the verification: produce a trip voltage based on: a comparison of a threshold voltage of the first transistor and a threshold voltage of the second transistor; and a reference voltage selected from the set and provided to a control terminal of the first transistor; and adjust the value of the trip voltage based on a comparison between a first current mirror having a first number of parallel transistors and a second current mirror connected to a second number of parallel transistors.

Abstract: The present invention is directed to a curable and debondable two-part (2K) adhesive composition comprising: i) a first part comprising: (meth)acrylate monomer; co-polymerizable acid; and, an electrolyte; and, ii) a second part comprising: a first curing agent for the monomers of said first part; a second curing agent for the monomers of said first part; a wax; and, a solubilizer, wherein said two-part (2K) adhesive composition further comprises a toughener, an oxygen scavenger and a rheology control agent and further wherein said two-part (2K) adhesive composition is characterized in that said electrolyte comprises or consists of at least one salt in accordance with Formula (I) or Formula (II):

Abstract: A light-emitting device includes: a light-emitting mesa structure having a first top surface and a peripheral surface connected to the first top surface; a transparent conductive layer that is disposed on the first top surface and that has a second top surface; a first insulating structure that is at least disposed on the peripheral surface and that has a third top surface and an inner tapered surface indented from the third top surface, the inner tapered surface having an acute angle with respect to the second top surface; and a reflective layer that is disposed on the transparent conductive layer and that has a first side surface in contact with the inner tapered surface. A method for manufacturing the light-emitting device is also disclosed.

Abstract: A cryptography system comprising a first node having a unique identifier generator configured to generate at least one physical unclonable function (PUF); and a second node configured to remotely send an attestation request to the first node is disclosed. In some embodiments, the cryptography system may form at least part of a distributed ledger and the PUF is configured to respond to the attestation request.

Abstract: A flip-chip light-emitting diode (LED) includes: a substrate having a patterned surface formed with a protrusion unit including first and second protrusions; a light-emitting epitaxial layer that is disposed on the second protrusions and that includes first and second semiconductor layers and an active layer interposed therebetween; first and second electrodes connected to the first and second semiconductor layers, respectively; and a passivation layer having an epitaxial-covering portion and a substrate-covering portion. The substrate-covering portion of the passivation layer has a top surface with hillocks having a height lower than that of the second protrusions. A high-voltage light-emitting device is also disclosed.

Abstract: Disclosed are an analog front-end (AFE) circuit and an offset voltage correction method thereof. The offset voltage correction method includes: obtaining the first offset voltage generated by the differential input transistor pair of the first amplifier in the AFE circuit, and generating first information according to the first offset voltage; obtaining a second offset voltage generated by a tail current source of the first amplifier in the AFE circuit, and generating second information according to the second offset voltage and the first information; obtaining a predetermined first DC gain and a predetermined second DC gain, and generating first compensation information by performing calculation based on the first DC gain, the second DC gain, the first information and the second information; and correcting an output voltage generated by the first amplifier based on the first compensation information.

Abstract: A fastening system, including: a fastener including: a hollow shaft; a threaded portion positioned on an outer surface of the hollow shaft; a first protrusion extending from an inner surface of the hollow shaft, the first protrusion including: a first angled surface; a first engagement surface; a nut corresponding to the fastener, including: a cavity having threaded portion; a projection positioned within the cavity of the nut, the projection including: a first locking feature positioned on an outer surface of the projection, the first locking feature including: a second angled surface; a first locking surface; wherein, in a first state of engagement of the fastener with the nut, the first angled surface of the first protrusion of the fastener engages with the second angled surface of the first locking feature of the projection to rotate the fastener with respect to the nut in response to downward force on the fastener.

Abstract: Disclosed is a light-emitting diode which includes a light-emitting epitaxial layered unit, an insulation layer, a transparent conductive layer, a protective layer, a first electrode, and a second electrode. The light-emitting epitaxial layered unit includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between the first and second semiconductor layers, and has a first electrode region which includes a pad area and an extension area. The insulation layer is disposed on the first semiconductor layer and at the extension area of the first electrode region. Also disclosed is a method for manufacturing the light-emitting diode.

Abstract: A light-emitting diode includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer, having an upper surface providing a first electrode area containing a pad area and an extended area; a transparent conductive layer over the first semiconductor layer having a first opening to expose a portion of a surface of the first semiconductor layer corresponding to the pad area; a protective layer over the transparent conductive layer having a second opening and a third opening respectively at positions corresponding to the pad area and the extended area, while exposing a portion of the surface of the first semiconductor layer corresponding to the pad area and a portion of a surface of the transparent conductive layer corresponding to the extended area; and a first electrode over the protective layer directly contacting the first semiconductor layer corresponding to the pad area via the first and second openings.

Abstract: A light-emitting diode (LED) includes a light-transmissive substrate having a first surface, an epitaxial structure disposed on the first surface, an insulation structure, and first and second electrodes. The epitaxial structure has an upper surface opposite to the first surface, and a side wall interconnecting the upper surface and the first surface. The insulation structure includes a first insulation layer covering the side wall and the upper surface, and a second insulation layer covering a portion of the first surface that is exposed from the epitaxial structure and the first insulation layer. The first insulation layer is formed with first and second holes through which the first and second electrodes are electrically connected to the epitaxial structure. The second insulation layer is formed with an opening. The insulation structure is made of at least one material selected from silicon oxide, silicon nitride, magnesium fluoride, Al2O3, TiO2 and Ti2O5.

Abstract: A light-emitting device includes a semiconductor light-emitting stack, first and second electrodes, an insulating layer, and a passivation layer. Each of the first and second electrodes is disposed on the semiconductor light-emitting stack. The insulating layer at least partially covers the semiconductor light-emitting stack. The passivation layer is disposed on the insulating layer, and covers the semiconductor light-emitting stack and a side surface of each of the first and second electrodes, to expose an upper surface of each of the first and second electrodes. The first electrode and the second electrode are separated by a distance that is greater than 0 ?m and that is not greater than 80 ?m.

Abstract: A semiconductor device includes a semiconductor layered structure, an electrode unit, and an anti-adsorption layer. The electrode unit is disposed on an electrode connecting region of the semiconductor layered structure, and is a multi-layered structure. The anti-adsorption layer is disposed on a top surface of the electrode unit opposite to the semiconductor layered structure. Also disclosed herein is a light-emitting system including the semiconductor device.

Abstract: An ultraviolet light-emitting diode includes a semiconductor layered stack, an ohmic contact layer, a metal current spreading layer, and a reflective layer. The semiconductor layered stack includes a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, and generating light by electron-hole recombination. The ohmic contact layer is formed on the second semiconductor layer, and forms an ohmic contact with the second semiconductor layer. The metal current spreading layer is formed on the ohmic contact layer, and electrically connected to the second semiconductor layer through the ohmic contact layer. The reflective layer is formed on the metal current spreading layer, and covers an exposed surface of the second semiconductor layer. A light-emitting device including the ultraviolet light-emitting diode is also provided.

Abstract: Disclosed is a light-emitting diode which includes a light-emitting epitaxial layered unit, an insulation layer, a transparent conductive layer, a protective layer, a first electrode, and a second electrode. The light-emitting epitaxial layered unit includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between the first and second semiconductor layers, and has a first electrode region which includes a pad area and an extension area. The insulation layer is disposed on the first semiconductor layer and at the extension area of the first electrode region. Also disclosed is a method for manufacturing the light-emitting diode.

Abstract: An information handling system, including a cover structure including a plurality of coupling members positioned on a surface of the cover structure, each of the coupling members defining a cavity; and a computing module having a perimeter and including a plurality of protruding members positioned on the perimeter, wherein each of a subset of the plurality of protruding members corresponds to a respective coupling member of the plurality of coupling members, wherein, when the computing module is coupled to the cover structure, each of subset of the plurality of protruding members is positioned with the cavity of the corresponding coupling member of the plurality of coupling members to maintain a positioning of the computing module with respect to the cover structure.

Abstract: A fastening system, including a fastener including a threaded portion positioned on an outer surface of the fastener; a protrusion positioned on an outer surface of the fastener, the protrusion including a first angled surface; and an engagement surface; a nut corresponding to the fastener, including a threaded portion positioned on an inner surface of the nut; a first locking feature positioned on an inner surface of the nut, the first locking feature including a second angled surface; a first locking surface; a second locking feature positioned on the inner surface of the nut, the second locking feature including a third angled surface; a second locking surface.