Abstract: An ultraviolet light-emitting diode includes a semiconductor layered stack, an ohmic contact layer, a metal current spreading layer, and a reflective layer. The semiconductor layered stack includes a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, and generating light by electron-hole recombination. The ohmic contact layer is formed on the second semiconductor layer, and forms an ohmic contact with the second semiconductor layer. The metal current spreading layer is formed on the ohmic contact layer, and electrically connected to the second semiconductor layer through the ohmic contact layer. The reflective layer is formed on the metal current spreading layer, and covers an exposed surface of the second semiconductor layer. A light-emitting device including the ultraviolet light-emitting diode is also provided.

Abstract: Disclosed is a light-emitting diode which includes a light-emitting epitaxial layered unit, an insulation layer, a transparent conductive layer, a protective layer, a first electrode, and a second electrode. The light-emitting epitaxial layered unit includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between the first and second semiconductor layers, and has a first electrode region which includes a pad area and an extension area. The insulation layer is disposed on the first semiconductor layer and at the extension area of the first electrode region. Also disclosed is a method for manufacturing the light-emitting diode.

Abstract: An information handling system, including a cover structure including a plurality of coupling members positioned on a surface of the cover structure, each of the coupling members defining a cavity; and a computing module having a perimeter and including a plurality of protruding members positioned on the perimeter, wherein each of a subset of the plurality of protruding members corresponds to a respective coupling member of the plurality of coupling members, wherein, when the computing module is coupled to the cover structure, each of subset of the plurality of protruding members is positioned with the cavity of the corresponding coupling member of the plurality of coupling members to maintain a positioning of the computing module with respect to the cover structure.

Abstract: A fastening system, including: a fastener including: a hollow shaft; a threaded portion positioned on an outer surface of the hollow shaft; a first protrusion extending from an inner surface of the hollow shaft, the first protrusion including: a first angled surface; a first engagement surface; a nut corresponding to the fastener, including: a cavity having threaded portion; a projection positioned within the cavity of the nut, the projection including: a first locking feature positioned on an outer surface of the projection, the first locking feature including: a second angled surface; a first locking surface; wherein, in a first state of engagement of the fastener with the nut, the first angled surface of the first protrusion of the fastener engages with the second angled surface of the first locking feature of the projection to rotate the fastener with respect to the nut in response to downward force on the fastener.

Abstract: A fastening system, including a fastener including a threaded portion positioned on an outer surface of the fastener; a protrusion positioned on an outer surface of the fastener, the protrusion including a first angled surface; and an engagement surface; a nut corresponding to the fastener, including a threaded portion positioned on an inner surface of the nut; a first locking feature positioned on an inner surface of the nut, the first locking feature including a second angled surface; a first locking surface; a second locking feature positioned on the inner surface of the nut, the second locking feature including a third angled surface; a second locking surface.

Abstract: A micro light emitting device includes an epitaxial structure, a conductive layer, and a first insulating layer. The epitaxial structure has a first surface and a second surface opposite to the first surface, and includes a first semiconductor layer, an active layer and a second semiconductor layer that are arranged in such order in a direction from the first surface to the second surface. The conductive layer is formed on a surface of the first semiconductor layer away from the active layer. The first insulating layer is formed on the surface of the first semiconductor layer away from the active layer, and exposes at least a part of the conductive layer.

Abstract: A duty cycle calibration circuit includes delay, temperature compensation, differential, and phase adjustment units. The delay adjustment unit receives a single-ended input clock signal to be calibrated and an adjustment voltage and outputs a single-ended clock signal adjusted by the adjustment voltage. The temperature compensation adjustment unit determines the adjustment voltage output by the temperature compensation adjustment unit, and provides the adjustment voltage to the delay adjustment unit to eliminate the influence of the temperature on the duty cycle. The differential adjustment unit converts the single-ended clock signal into a differential clock signal, and adjusts delay of the differential clock signal.

Abstract: A light-emitting device includes a semiconductor laminate, a first contact electrode, and a second contact electrode. The semiconductor laminate includes a first semiconductor layer, an active layer, and a second semiconductor layer being laminated in a thickness direction. The semiconductor laminate has a first portion having a patterned structure that has a first surface constituted by the first semiconductor layer, a second surface opposite to the first surface and away from the first semiconductor layer, and a side surface interconnecting the first surface and the second surface, and a second portion being a light-emitting area. The first contact electrode is formed on the first portion, electrically connected to the first semiconductor layer and in contact with the first surface, the second surface and the side surface of the patterned structure. The second contact electrode is formed on the second portion and electrically connected to the second semiconductor layer.

Abstract: A light-emitting diode includes a substrate, a distributed Bragg reflector (DBR) structure and a semiconductor layered structure. The DBR structure is disposed on the substrate. The semiconductor layered structure is disposed on the DBR structure opposite to the substrate, and is configured to emit a light having a first wavelength. The DBR structure has a reflectance of not greater than 30% for the light having the first wavelength, and a reflectance of not smaller than 50% for a laser beam having a second wavelength that is different from the first wavelength.

Abstract: A foldable light-shielding hood includes a plate body, a first supporting portion, a second supporting portion, a hanging portion, a first folded portion, and a second folded portion. The first supporting portion, the second supporting portion, and the hanging portion are foldably disposed to the plate body. The first folded portion is foldably disposed to the first supporting portion. The second folded portion is foldably disposed to the second supporting portion. The foldable light-shielding hood is adapted for hanging on a portable electronic device through the hanging portion. The first folded portion, the second folded portion, the hanging portion, the first supporting portion, the second supporting portion, and the plate body surround a shielding space, and the first folded portion, the second folded portion, and the hanging portion are adapted for being combined with the portable electronic device, and a display surface is located in the shielding space.

Abstract: According to the disclosure, the light emitting device includes a substrate, a semiconductor structure, a first electrode unit, a second electrode unit, a plurality of micro elements. The substrate has a first surface and a second surface opposite to the first surface. The semiconductor structure located on top of the first surface of the substrate, and has a first semiconductor layer, an active layer, and a second semiconductor layer that are stacked sequentially. The first electrode unit is electrically connected to the first semiconductor layer. The second electrode unit is electrically connected to the second semiconductor layer. The plurality of micro elements are located on the second surface of the substrate. Each of the micro elements has a base that is protrusion that has a base diameter ranging from 400 nm to 1000 nm.

Abstract: A light-emitting diode (LED) includes a light-transmissive substrate having a first surface, an epitaxial structure disposed on the first surface, an insulation structure, and first and second electrodes. The epitaxial structure has an upper surface opposite to the first surface, and a side wall interconnecting the upper surface and the first surface. The insulation structure includes a first insulation layer covering the side wall and the upper surface, and a second insulation layer covering a portion of the first surface that is exposed from the epitaxial structure and the first insulation layer. The first insulation layer is formed with first and second holes through which the first and second electrodes are electrically connected to the epitaxial structure. The second insulation layer is formed with an opening. The insulation structure is made of at least one material selected from silicon oxide, silicon nitride, magnesium fluoride, Al2O3, TiO2 and Ti2O5.

Abstract: The application provides a calibration method, a calibration device and a multi-phase clock circuit. The method includes: gating each of multi-phase clock signals as a first primary clock signal and gating a corresponding clock signal as a first auxiliary clock signal according to a first preset rule; gating each of the multi-phase clock signals as a second primary clock signal and gating a corresponding clock signal as a second auxiliary clock signal according to a second preset rule; obtaining a time difference between each primary clock signal and its corresponding auxiliary clock signal under the first preset rule and the second preset rule; determining a delay adjustment amount of each primary clock signal according to the time difference, and obtaining a phase error between the multi-phase clock signals according to the delay adjustment amount; and obtaining a calibration amount of the multi-phase clock signals according to the phase error.

Abstract: A light emitting device includes a semiconductor stack, and an insulating layer partially covering the semiconductor stack. The semiconductor stack includes a first conductivity type semiconductor layer, a light emitting layer and a second conductivity type semiconductor layer that are stacked in sequence. A reflective layer is disposed in the insulating layer, and includes a metal reflective layer and an anti-oxidation layer stacked one on top of the other. A light emitting apparatus is also disclosed.

Abstract: A federated learning method includes: determining at least one candidate feature from data features corresponding to a training data-set, the candidate feature corresponding to at least two decision trends in a decision tree model; obtaining n first decision tree models by taking the at least one candidate feature as a model construction foundation, value of n corresponding to number of the at least one candidate feature; determining at least one second decision tree model from the n first decision tree models based on prediction results of the n first decision tree models on training data in the training data-set; and transmitting the second decision tree model to a second computing device, the second computing device being configured to fuse at least two decision tree models that comprise the second decision tree model to obtain a federated learning model.

Abstract: An LED device includes an epitaxial layered structure, a current spreading layer, a first insulating layer and a reflective structure. The current spreading layer is formed on a surface of the epitaxial layered structure. The first insulating layer is formed over the current spreading layer, and is formed with at least one first through hole to expose the current spreading layer. The reflective structure is formed on the first insulating layer, extends into the first through hole, and contacts the current spreading layer. The current spreading layer is formed with at least one opening structure to expose the surface of the epitaxial layered structure.

Abstract: A light-emitting diode (LED) includes a light-transmissive substrate which has a first surface, an epitaxial structure which is disposed on the first surface, a first insulation layer, and a second insulation layer. The epitaxial structure has an upper surface opposite to the first surface, and a side wall interconnecting the upper surface and the first surface. The first insulation layer covers the side wall and the upper surface. The second insulation layer covers a portion of the first surface that is not covered by the epitaxial structure and the first insulation layer, and has a light transmittance greater than that of the first insulation layer. An LED package, an LED module, and a display device including the LEDs are also disclosed.

Abstract: A light-emitting diode includes a semiconductor light-emitting stack, a transparent conductive layer, a first current blocking layer, and a first electrode pad. The semiconductor light-emitting stack includes, in sequence from bottom to top, a second conductivity type semiconductor layer, a light-emitting layer, and a first conductivity type semiconductor layer. The transparent conductive layer is disposed on the first conductivity type semiconductor layer, and is formed with a first opening which is defined by an inner edge of the transparent conductive layer. The first current blocking layer is formed on the first conductivity type semiconductor layer. The first electrode pad is formed on and in contact with both the first current blocking layer and on the first conductivity type semiconductor layer. The first electrode pad has a width not greater than a dimension of the first opening.

Abstract: A light-emitting diode (LED) device includes a substrate, an epitaxial layered structure disposed on the substrate, a current-spreading layer disposed on the epitaxial layered structure, a current-blocking unit disposed on the current-spreading layer, and a distributed Bragg reflector. The epitaxial layered structure, the current-spreading layer and the current-blocking unit are covered by the distributed Bragg reflector. One of the current-spreading layer, the current-blocking unit, and a combination thereof has a patterned rough structure. A method for manufacturing the LED device is also disclosed.