Abstract: A light-emitting device includes a semiconductor laminate, a first contact electrode, and a second contact electrode. The semiconductor laminate includes a first semiconductor layer, an active layer, and a second semiconductor layer being laminated in a thickness direction. The semiconductor laminate has a first portion having a patterned structure that has a first surface constituted by the first semiconductor layer, a second surface opposite to the first surface and away from the first semiconductor layer, and a side surface interconnecting the first surface and the second surface, and a second portion being a light-emitting area. The first contact electrode is formed on the first portion, electrically connected to the first semiconductor layer and in contact with the first surface, the second surface and the side surface of the patterned structure. The second contact electrode is formed on the second portion and electrically connected to the second semiconductor layer.

Abstract: A light-emitting diode includes a substrate, a distributed Bragg reflector (DBR) structure and a semiconductor layered structure. The DBR structure is disposed on the substrate. The semiconductor layered structure is disposed on the DBR structure opposite to the substrate, and is configured to emit a light having a first wavelength. The DBR structure has a reflectance of not greater than 30% for the light having the first wavelength, and a reflectance of not smaller than 50% for a laser beam having a second wavelength that is different from the first wavelength.

Abstract: According to the disclosure, the light emitting device includes a substrate, a semiconductor structure, a first electrode unit, a second electrode unit, a plurality of micro elements. The substrate has a first surface and a second surface opposite to the first surface. The semiconductor structure located on top of the first surface of the substrate, and has a first semiconductor layer, an active layer, and a second semiconductor layer that are stacked sequentially. The first electrode unit is electrically connected to the first semiconductor layer. The second electrode unit is electrically connected to the second semiconductor layer. The plurality of micro elements are located on the second surface of the substrate. Each of the micro elements has a base that is protrusion that has a base diameter ranging from 400 nm to 1000 nm.

Abstract: A light-emitting diode (LED) includes a light-transmissive substrate having a first surface, an epitaxial structure disposed on the first surface, an insulation structure, and first and second electrodes. The epitaxial structure has an upper surface opposite to the first surface, and a side wall interconnecting the upper surface and the first surface. The insulation structure includes a first insulation layer covering the side wall and the upper surface, and a second insulation layer covering a portion of the first surface that is exposed from the epitaxial structure and the first insulation layer. The first insulation layer is formed with first and second holes through which the first and second electrodes are electrically connected to the epitaxial structure. The second insulation layer is formed with an opening. The insulation structure is made of at least one material selected from silicon oxide, silicon nitride, magnesium fluoride, Al2O3, TiO2 and Ti2O5.

Abstract: A light emitting device includes a semiconductor stack, and an insulating layer partially covering the semiconductor stack. The semiconductor stack includes a first conductivity type semiconductor layer, a light emitting layer and a second conductivity type semiconductor layer that are stacked in sequence. A reflective layer is disposed in the insulating layer, and includes a metal reflective layer and an anti-oxidation layer stacked one on top of the other. A light emitting apparatus is also disclosed.

Abstract: An LED device includes an epitaxial layered structure, a current spreading layer, a first insulating layer and a reflective structure. The current spreading layer is formed on a surface of the epitaxial layered structure. The first insulating layer is formed over the current spreading layer, and is formed with at least one first through hole to expose the current spreading layer. The reflective structure is formed on the first insulating layer, extends into the first through hole, and contacts the current spreading layer. The current spreading layer is formed with at least one opening structure to expose the surface of the epitaxial layered structure.

Abstract: A light-emitting diode (LED) includes a light-transmissive substrate which has a first surface, an epitaxial structure which is disposed on the first surface, a first insulation layer, and a second insulation layer. The epitaxial structure has an upper surface opposite to the first surface, and a side wall interconnecting the upper surface and the first surface. The first insulation layer covers the side wall and the upper surface. The second insulation layer covers a portion of the first surface that is not covered by the epitaxial structure and the first insulation layer, and has a light transmittance greater than that of the first insulation layer. An LED package, an LED module, and a display device including the LEDs are also disclosed.

Abstract: A light-emitting diode includes a semiconductor light-emitting stack, a transparent conductive layer, a first current blocking layer, and a first electrode pad. The semiconductor light-emitting stack includes, in sequence from bottom to top, a second conductivity type semiconductor layer, a light-emitting layer, and a first conductivity type semiconductor layer. The transparent conductive layer is disposed on the first conductivity type semiconductor layer, and is formed with a first opening which is defined by an inner edge of the transparent conductive layer. The first current blocking layer is formed on the first conductivity type semiconductor layer. The first electrode pad is formed on and in contact with both the first current blocking layer and on the first conductivity type semiconductor layer. The first electrode pad has a width not greater than a dimension of the first opening.

Abstract: A light-emitting diode (LED) device includes a substrate, an epitaxial layered structure disposed on the substrate, a current-spreading layer disposed on the epitaxial layered structure, a current-blocking unit disposed on the current-spreading layer, and a distributed Bragg reflector. The epitaxial layered structure, the current-spreading layer and the current-blocking unit are covered by the distributed Bragg reflector. One of the current-spreading layer, the current-blocking unit, and a combination thereof has a patterned rough structure. A method for manufacturing the LED device is also disclosed.

Abstract: A light-emitting device includes a light-emitting laminated structure, a first contact electrode, and an insulating layer. The light-emitting laminated structure has a first surface and a second surface opposite to the first surface, and includes a first semiconductor layer, a second semiconductor layer, and an active layer. The first contact electrode is disposed on the first surface and forms an ohmic contact with the light-emitting laminated structure. The insulating layer is disposed on the light-emitting laminated structure and covers the light-emitting laminated structure and the first contact electrode. The first contact electrode includes a first metal material that has a work function not less than 5 eV and that is in contact with the first surface. A method for producing the light-emitting device is also disclosed.

Abstract: A light-emitting device includes a substrate, a first type semiconductor layer, a protrusion, and a first reflection structure. The first type semiconductor layer is disposed on a surface of the substrate, and has a surface that has first and second conductive regions. The first type semiconductor layer is made of AlxGa1-xN, and x ranges from 0 to 1. A protrusion includes an active layer and a second type semiconductor layer that are sequentially disposed on the first conductive region of the surface of the first type semiconductor layer in such order. A first reflection structure is disposed in the protrusion, and penetrates through the second type semiconductor layer, the active layer of the protrusion and into the first type semiconductor layer. The light-emitting device emits light that has an emission wavelength ranging from 200 nm to 320 nm.

Abstract: A semiconductor light-emitting device includes a semiconductor light-emitting stack and an insulating light-transmissive layer. The semiconductor light-emitting stack includes an active layer and has a light-emitting surface. The insulating light-transmissive layer is disposed on the light-emitting surface and includes a base and a grade index structure. The base has a first refractive index. The grade index structure is disposed on the base in a way that the base is disposed between the semiconductor light-emitting stack and the graded index structure. The graded index structure includes at least two films and has a gradually varying refractive index which gradually decrease in a direction away from the base, and which is greater than the first refractive index. A light-emitting apparatus including the semiconductor light-emitting device and a sealing resin is also provided.

Abstract: A light-emitting diode includes a semiconductor light-emitting stack, a transparent conductive layer, a first current blocking layer, and a first electrode pad. The transparent conductive layer is disposed on the semiconductor light-emitting stack, and is formed with a first opening defined by an inner edge thereof. The first current blocking layer is formed on the semiconductor light-emitting stack, and is surrounded by and spaced apart from the inner edge of the transparent conductive layer by a first gap. The first electrode pad fully covers the first current blocking layer so as to permit the first electrode pad to be in contact with the semiconductor light-emitting stack through the first gap.

Abstract: An LED device includes an epitaxial layered structure, a current spreading layer, a first insulating layer and a reflective structure. The current spreading layer is formed on a surface of the epitaxial layered structure. The first insulating layer is formed over the current spreading layer, and is formed with at least one first through hole to expose the current spreading layer. The reflective structure is formed on the first insulating layer, extends into the first through hole, and contacts with the current spreading layer. The current spreading layer is formed with at least one opening structure to expose the surface of the epitaxial layered structure.

Abstract: Disclosed is a light-emitting diode which includes a light-emitting epitaxial layered unit, an insulation layer, a transparent conductive layer, a protective layer, a first electrode, and a second electrode. The light-emitting epitaxial layered unit includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between the first and second semiconductor layers, and has a first electrode region which includes a pad area and an extension area. The insulation layer is disposed on the first semiconductor layer and at the extension area of the first electrode region. Also disclosed is a method for manufacturing the light-emitting diode.

Abstract: A light-emitting device includes a semiconductor light-emitting stack and a distributed Bragg reflector (DBR) structure. The semiconductor light-emitting stack includes a light-emitting layer. The DBR structure is disposed on the semiconductor light-emitting stack and includes a plurality of first dielectric material layers and a plurality of second dielectric material layers that are alternately stacked on the semiconductor light-emitting stack. The first dielectric material layer has a first refractive index, and the second dielectric material layer has a second refractive index. The first refractive index is lower than the second refractive index. The second dielectric material layer has an optical thickness that is smaller than that of the first dielectric material layer.

Abstract: A light-emitting device includes a semiconductor light-emitting stack, first and second electrodes, an insulating layer, and a passivation layer. Each of the first and second electrodes is disposed on the semiconductor light-emitting stack. The insulating layer at least partially covers the semiconductor light-emitting stack. The passivation layer is disposed on the insulating layer, and covers the semiconductor light-emitting stack and a side surface of each of the first and second electrodes, to expose an upper surface of each of the first and second electrodes. The first electrode and the second electrode are separated by a distance that is greater than 0 ?m and that is not greater than 80 ?m.

Abstract: A semiconductor light-emitting device includes a light-transmissible substrate, and a semiconductor light-emitting stack. The light-transmissible substrate is made of a first material, and has a first surface and a second surface opposite to the first surface. The first surface has a first region, and a second region which is formed with a plurality of protruding portions and a plurality of recessed portions formed therebetween. The recessed portions are disposed at a level lower than that of the first region relative to the second surface. The semiconductor light-emitting stack is disposed on the first region of the first surface along a stacking direction.

Abstract: An ultraviolet light-emitting device includes a substrate including surface portions, a light-emitting structure including first and second semiconductor layers and an active layer, a first metallic contact electrode, and a second metallic contact electrode. The first and second metallic contact electrodes disposed on the light-emitting structure are respectively electrically connected to the first and second semiconductor layers. The first metallic contact electrode has at least one outer electrode section positioned between the active layer and a laser-cut surface portion. The active layer and the laser-cut surface portion are spaced apart by a minimum distance ranging from 30 ?m to 100 ?m.

Abstract: Disclosed is a light-emitting diode which includes a light-emitting epitaxial layered unit, an insulation layer, a transparent conductive layer, a protective layer, a first electrode, and a second electrode. The light-emitting epitaxial layered unit includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between the first and second semiconductor layers, and has a first electrode region which includes a pad area and an extension area. The insulation layer is disposed on the first semiconductor layer and at the extension area of the first electrode region. Also disclosed is a method for manufacturing the light-emitting diode.