Abstract: Disclosed is a light-emitting diode which includes a light-emitting epitaxial layered unit, an insulation layer, a transparent conductive layer, a protective layer, a first electrode, and a second electrode. The light-emitting epitaxial layered unit includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between the first and second semiconductor layers, and has a first electrode region which includes a pad area and an extension area. The insulation layer is disposed on the first semiconductor layer and at the extension area of the first electrode region. Also disclosed is a method for manufacturing the light-emitting diode.

Abstract: A semiconductor device includes a semiconductor layered structure, an electrode unit, and an anti-adsorption layer. The electrode unit is disposed on an electrode connecting region of the semiconductor layered structure, and is a multi-layered structure. The anti-adsorption layer is disposed on a top surface of the electrode unit opposite to the semiconductor layered structure. Also disclosed herein is a light-emitting system including the semiconductor device.

Abstract: A high-voltage flip-chip semiconductor light-emitting device includes a substrate, at least two semiconductor light-emitting units, an isolation trench, a conducting layer, an isolating layer, a connecting layer, and a Bragg reflection layer. The semiconductor light-emitting units and the conducting layer are sequentially disposed on the substrate. The isolation trench is formed between the semiconductor light-emitting units. The isolating layer partially covers the conducting layer. The connecting layer is disposed on the isolating layer and electrically connects the semiconductor light-emitting units. The Bragg reflection layer covers the connecting layer and the isolating layer.

Abstract: A light-emitting diode (LED) device includes a substrate, an epitaxial layered structure disposed on the substrate, a current-spreading layer disposed on the epitaxial layered structure, a current-blocking unit disposed on the current-spreading layer, and a distributed Bragg reflector. The epitaxial layered structure, the current-spreading layer and the current-blocking unit are covered by the distributed Bragg reflector. One of the current-spreading layer, the current-blocking unit, and a combination thereof has a patterned rough structure. A method for manufacturing the LED device is also disclosed.

Abstract: A light-emitting device includes a carrier substrate, a flip-chip light-emitting diode (LED) mounted onto the carrier substrate, and an electrode unit disposed between the carrier substrate and the flip-chip LED. The electrode unit includes first and second connecting electrodes that have opposite conductivity. Each of the first and second connecting electrodes includes an intermediate metal layer and a binding layer that are sequentially disposed on the flip-chip LED in such order. The binding layer includes a first portion being adjacent to the carrier substrate and forming an eutectic system with tin, and a second portion located between the first portion and the intermediate metal layer.

Abstract: A semiconductor device includes a semiconductor layered structure, an electrode unit, and an anti-adsorption layer. The electrode unit is disposed on an electrode connecting region of the semiconductor layered structure. The anti-adsorption layer is disposed on a top surface of the electrode unit opposite to the semiconductor layered structure and is electrically connected to the electrode unit. The anti-adsorption layer has an adsorption capacity for at least one of gaseous contaminants and particulate contaminants which is lower than that of the electrode unit. Also disclosed herein is a light-emitting system including the semiconductor device.

Abstract: A light-emitting diode (LED) includes a substrate, an epitaxial structure disposed on the substrate, and first and second electrode units disposed on the epitaxial structure. The first and second electrode units are electrically connected to first and second semiconductor layers of the epitaxial structure, respectively. A surface of the epitaxial structure opposite to the substrate has an operating zone to be pushed by an ejector pin during a packaging process. A projection of the second electrode unit on the substrate bypasses a projection of the operating zone on the substrate, and extends toward the first electrode unit.

Abstract: A light-emitting diode (LED) device includes a substrate, an epitaxial layered structure disposed on the substrate, a current-spreading layer disposed on the epitaxial layered structure, a current-blocking unit disposed on the current-spreading layer, and a distributed Bragg reflector. The epitaxial layered structure, the current-spreading layer and the current-blocking unit are covered by the distributed Bragg reflector. One of the current-spreading layer, the current-blocking unit, and a combination thereof has a patterned rough structure. A method for manufacturing the LED device is also disclosed.

Abstract: A flip-chip light-emitting diode (LED) includes: a substrate having a patterned surface formed with a protrusion unit including first and second protrusions; a light-emitting epitaxial layer that is disposed on the second protrusions and that includes first and second semiconductor layers and an active layer interposed therebetween; first and second electrodes connected to the first and second semiconductor layers, respectively; and a passivation layer having an epitaxial-covering portion and a substrate-covering portion. The substrate-covering portion of the passivation layer has a top surface with hillocks having a height lower than that of the second protrusions. A high-voltage light-emitting device is also disclosed.

Abstract: An LED device includes an epitaxial layered structure, a current spreading layer, a first insulating layer and a reflective structure. The current spreading layer is formed on a surface of the epitaxial layered structure. The first insulating layer is formed over the current spreading layer, and is formed with at least one first through hole to expose the current spreading layer. The reflective structure is formed on the first insulating layer, extends into the first through hole, and contacts with the current spreading layer. The current spreading layer is formed with at least one opening structure to expose the surface of the epitaxial layered structure.

Abstract: A light-emitting diode includes a light-transmissive substrate, a light-emitting unit disposed on the light-transmissive substrate, an insulating layer, a first electrode and a second electrode. The insulating layer includes a first insulating portion and a second insulating portion which respectively cover an upward surface and a lateral surface of the light-emitting unit. The first and second electrodes are separately disposed on the insulating layer. At least one of the first and second electrodes extends on the first insulating portion and over a juncture between the first insulating portion and the second insulating portion.

Abstract: A light-emitting device includes: a light-emitting mesa structure having a first top surface and a peripheral surface connected to the first top surface; a transparent conductive layer that is disposed on the first top surface and that has a second top surface; a first insulating structure that is at least disposed on the peripheral surface and that has a third top surface and an inner tapered surface indented from the third top surface, the inner tapered surface having an acute angle with respect to the second top surface; and a reflective layer that is disposed on the transparent conductive layer and that has a first side surface in contact with the inner tapered surface. A method for manufacturing the light-emitting device is also disclosed.

Abstract: A light-emitting diode (LED) device includes multiple LED chips, a first protecting layer, and first and second electrical connection structures. The LED chips are separated from each other by a trench. Each LED chip is formed in a mesa structure, and includes first and second semiconductor layers and an active layer sandwiched therebetween. The first protecting layer covers a trench-defining wall of the trench, and the mesa structure of each LED chip. The first and second electrical connection structures penetrate through the first protecting layer to electrically and respectively connect in parallel with the first and second semiconductor layer of each LED chip.

Abstract: A light-emitting diode chip includes a substrate. The substrate has a side surface configured as a serrated surface, which includes a plurality of laser inscribed features disposed along a thickness direction of the substrate and spaced apart from each other. A method for manufacturing the light-emitting diode chip is also disclosed herein.

Abstract: A light-emitting diode includes a substrate, a distributed Bragg reflector (DBR) structure and a semiconductor layered structure. The DBR structure is disposed on the substrate. The semiconductor layered structure is disposed on the DBR structure opposite to the substrate, and is configured to emit a light having a first wavelength. The DBR structure has a reflectance of not greater than 30% for the light having the first wavelength, and a reflectance of not smaller than 50% for a laser beam having a second wavelength that is different from the first wavelength.

Abstract: A light-emitting diode (LED) includes a transmissible substrate, an epitaxial layered structure, a distributed Bragg reflector (DBR) structure, a first electrode, and a second electrode. The epitaxial layered structure is disposed on the transmissible substrate. The DBR structure is disposed on the epitaxial layered structure opposite to the transmissible substrate. The DBR structure has at least one first through hole and at least one second through hole, and is formed with a plurality of voids. The first electrode and the second electrode are electrically connected to the first semiconductor layer and the second semiconductor layer, respectively. An LED packaged module including the LED is also disclosed.

Abstract: A light-emitting diode includes a semiconductor light-emitting stack, a transparent conductive layer, a first current blocking layer, and a first electrode pad. The transparent conductive layer is disposed on the semiconductor light-emitting stack, and is formed with a first opening defined by an inner edge thereof. The first current blocking layer is formed on the semiconductor light-emitting stack, and is surrounded by and spaced apart from the inner edge of the transparent conductive layer by a first gap. The first electrode pad fully covers the first current blocking layer so as to permit the first electrode pad to be in contact with the semiconductor light-emitting stack through the first gap.

Abstract: A light-emitting diode (LED) includes a light-transmissive substrate which has a first surface, an epitaxial structure which is disposed on the first surface, a first insulation layer, and a second insulation layer. The epitaxial structure has an upper surface opposite to the first surface, and a side wall interconnecting the upper surface and the first surface. The first insulation layer covers the side wall and the upper surface. The second insulation layer covers a portion of the first surface that is not covered by the epitaxial structure and the first insulation layer, and has a light transmittance greater than that of the first insulation layer. An LED package, an LED module, and a display device including the LEDs are also disclosed.

Abstract: A light emitting diode device includes a light emitting epitaxial layered structure and a current spreading layer formed on the light emitting epitaxial layered structure. The current spreading layer has a top surface and a bottom surface that are respectively distal from and proximal to the light emitting epitaxial layered structure, and a peripheral surface that interconnects the top surface and the bottom surface and that is formed with a first patterned structure. The peripheral surface and the bottom surface cooperatively define an interior angle included therebetween which is greater than 90° and smaller than 180°.

Abstract: An LED device includes an epitaxial layered structure, a current spreading layer, a first insulating layer and a reflective structure. The current spreading layer is formed on a surface of the epitaxial layered structure. The first insulating layer is formed over the current spreading layer, and is formed with at least one first through hole to expose the current spreading layer. The reflective structure is formed on the first insulating layer, extends into the first through hole, and contacts with the current spreading layer. The current spreading layer is formed with at least one opening structure to expose the surface of the epitaxial layered structure.