Abstract: A technology disclosed in the present disclosure provides a Group III-V-based quantum dot including a seed which includes a Group III element, a Group V element, and an active metal having various oxidation numbers and in which a molar ratio of the Group III element and the active metal is 1:3 to 1:30, and a method of manufacturing the same.

Abstract: Apparatuses and methods for setting a duty cycler adjuster for improving clock duty cycle are disclosed. The duty cycle adjuster may be adjusted by different amounts, at least one smaller than another. Determining when to use the smaller adjustment may be based on duty cycle results. A duty cycle monitor may have an offset. A duty cycle code for the duty cycle adjuster may be set to an intermediate value of a duty cycle monitor offset. The duty cycle monitor offset may be determined by identifying duty cycle codes for an upper and for a lower boundary of the duty cycle monitor offset.

Abstract: This document describes apparatuses and techniques for multi-rail power transition. In various aspects, a power rail controller transitions a memory circuit (e.g., of a memory die) from a first power rail to a second power rail. The power rail controller then changes a voltage of the first power rail from a first voltage to a second voltage. The power rail controller may also adjust termination impedance or a clock frequency of the memory circuit before transitioning the memory circuit to the second power rail. The power rail controller then transitions the memory circuit from the second power rail to the first power rail to enable operation of the memory circuit at the second voltage. By so doing, the power rail controller may improve the reliability of memory operations when transitioning operation of the memory circuit from the first voltage to the second voltage.

Abstract: A value associated with a number of accesses of a word line and a length of said accesses may be stored on said word line. A timer may provide a periodic signal that increments a counter to update the value. The updated value may then be written back to the word line. In some examples, a memory device including the word lines may have a specification that prevents the word line from closing prior to writing the updated value to the word line.

Abstract: Methods, systems, and devices for centralized error correction circuit are described. An apparatus may include a non-volatile memory disposed on a first die and a volatile memory disposed on a second die (different than the first die). The apparatus may also include an interface controller disposed on a third die (different than the first die and the second die). The interface controller may be coupled with the non-volatile memory and the volatile memory and may include an error correction circuit that is configured to operate on one or more codewords received from the volatile memory.

Abstract: Apparatuses and techniques for implementing usage-based disturbance counter clearance are described. In example implementations, a memory device includes a memory array having multiple rows. The memory device also includes multiple usage-based disturbance counters that are associated with the memory array. The memory device further includes logic that performs a refresh operation on a row of the multiple rows responsive to a refresh command. The logic also clears a usage-based disturbance counter of the multiple usage-based disturbance counters responsive to the refresh command. Here, the usage-based disturbance counter stores a quantity of accesses to the row of the multiple rows. This can reduce a frequency of performing usage-based disturbance mitigation procedures that would otherwise be applied to the multiple usage-based disturbance counters, thereby saving power and avoiding denial-of-service periods with the memory array.

Abstract: Apparatuses and techniques for implementing collision avoidance for bank-shared circuitry that supports usage-based disturbance mitigation are described. A memory device includes bank-shared circuitry coupled to multiple banks. The bank-shared circuitry can support usage-based disturbance mitigation. By using the bank-shared circuitry to service multiple banks, the memory device can have a smaller footprint and can be cheaper to manufacture compared to other memory devices with circuitry dedicated for each bank. To avoid conflicts associated with some sequences of commands that may relate to a same bank or different banks and utilize the bank-shared circuitry, the memory controller applies an appropriate timing offset (or delay) between commands. The timing offset allows the memory device time to finish utilizing the bank-shared circuitry for usage-based disturbance mitigation prior to utilizing the bank-shared circuitry in accordance with a subsequent command.

Abstract: Apparatuses and techniques for implementing a data sense amplifier circuit with a hybrid architecture. With the hybrid architecture, the data sense amplifier circuit includes a first set of amplifiers that are shared by multiple banks and includes a second set of amplifiers with multiple subsets dedicated to different banks. The bank-shared amplifiers support memory operations (e.g., a read operation) across multiple banks. Each amplifier within the first set of amplifiers is coupled to at least two banks. The bank-specific amplifiers support usage-based disturbance mitigation for a corresponding bank. Each amplifier within the second set of amplifiers is coupled to one of the multiple banks. The bank-shared amplifiers enable the data sense amplifier circuit to have a smaller footprint while the bank-specific amplifiers enable the data sense amplifier circuit to support usage-based disturbance mitigation and avoid conflicts associated with some sequences of commands.

Abstract: Described apparatuses and methods are directed to equalization with pulse-amplitude modulation (PAM) signaling. As bus frequencies have increased, the time for correctly transitioning between voltage levels has decreased, which can lead to errors. Symbol decoding reliability can be improved with equalization, like with decision-feedback equalization (DFE). DFE, however, can be expensive for chip area and power usage. Therefore, instead of applying DFE to all voltage level determination paths in a receiver, DFE can be applied to a subset of such determination paths. With PAM4 signaling, for example, a DFE circuit can be coupled between an output and an input of a middle slicer. In some cases, symbol detection reliability can be maintained even with fewer DFE circuits by compressing a middle eye of the PAM4 signal. The other two eyes thus have additional headroom for expansion. Encoding schemes, impedance terminations, or reference voltage levels can be tailored accordingly.

Abstract: Methods, systems, and devices for selective access for grouped memory dies are described. A memory device may be configured with a select die access protocol for a group of memory dies that share a same channel. The protocol may be enabled by one or more commands from the host device, which may be communicated to each of the memory dies of the group via the channel. The command(s) may indicate a first set of one or more memory dies of the group for which a set of commands may be enabled and may also indicate a second set of one or more memory dies of the group for which at least a subset of the set of commands is disabled. When the select die access mode is enabled, the disabled memory dies may be restricted from performing the subset of commands received via the channel.

Abstract: Apparatuses and techniques for implementing a standalone mode are described. The standalone mode refers to a mode in which a die that is designed to operate as one of multiple dies that are interconnected can operate independently of another one of the multiple dies. Prior to connecting the die to the other die, the die can perform a standalone read operation and/or a standalone write operation in accordance with the standalone mode. In this way, testing (or debugging) can be performed during an earlier stage in the manufacturing process before integrating the die into an interconnected die architecture. For example, this type of testing can be performed at a wafer level or at a single-die-package (SDP) level. In general, the standalone mode can be executed independent of whether the die is connected to the other die.

Abstract: The subject application is directed to die location detection for grouped memory dies are described. A memory device may include multiple memory die that are coupled with a shared bus. In some examples, each memory die may include a circuit configured to output an identifier associated with a location of the respective memory die. For example, a first memory die may output a first identifier, based on receiving one or more signals, that identifies a location of the first memory die. Identifying the locations of the respective memory dies may allow for the dies to be individually accessed despite being coupled with a shared bus.

Abstract: Methods, systems, and devices for managing address access information are described. A device may receive a command for an address of a memory array. Based on or in response to the command, the device may read a first set of tag bits from the memory array. The first set of tag bits may indicate access information for a set of addresses that includes the address. The device may determine a second set of tag bits based on the command and the address. The second set of tag bits may indicate updated access information for the address. The device may generate a codeword based on the first set of tag bits and the second set of tag bits and may store the codeword in the memory array.

Abstract: Described apparatuses and methods provide configurable error correction code (ECC) circuitry and schemes that can utilize a shared ECC engine between multiple memory banks of a memory, including a low-power double data rate (LPDDR) memory. A memory device may include one or more dies with multiple memory banks. The configurable ECC circuitry can use an ECC engine that services a memory bank by producing ECC values based on data stored in the memory bank when data-masking functionality is enabled. When data-masking functionality is disabled, the configurable ECC circuitry can use the shared ECC engine that services at least two memory banks by producing ECC values with a larger quantity of bits based on respective data stored in the at least two memory banks. By using the shared ECC engine responsive to the data-masking functionality being disabled, the ECC functionality can provide higher data reliability with lower die area utilization.

Abstract: Described apparatuses and methods provide adaptive selection of a configuration-dependent operand. Adaptive selection enables a die to automatically detect its configuration and dynamically read from or write to configuration-dependent operands of one or more mode registers based on the configuration. In this manner, a memory device with dies having a first byte width (e.g., 1 byte) can be transparent to a memory channel having a second byte width that is larger than the first byte width (e.g., two bytes). For example, two 8-bit dies enabled with aspects of adaptive selection may be coupled to a 16-bit memory channel and each automatically detect its byte position (e.g., upper byte or lower byte). Based on the detected byte position or byte indicator, the 8-bit dies may be configured for use through respective mode registers that correspond to the byte position or assignment of the die.

Abstract: Apparatuses and methods for setting a duty cycler adjuster for improving clock duty cycle are disclosed. The duty cycle adjuster may be adjusted by different amounts, at least one smaller than another. Determining when to use the smaller adjustment may be based on duty cycle results. A duty cycle monitor may have an offset. A duty cycle code for the duty cycle adjuster may be set to an intermediate value of a duty cycle monitor offset. The duty cycle monitor offset may be determined by identifying duty cycle codes for an upper and for a lower boundary of the duty cycle monitor offset.

Abstract: Multilevel command and address (CA) signals are used to provide commands and memory addresses from a controller to a memory system. Using multilevel signals CA signals may allow for using fewer signals compared to binary signals to represent a same number of commands and/or address space, or using a same number of multilevel CA signals to represent a larger number of commands and/or address space. A number of external command/address terminals may be reduced without reducing a set of commands and/or address space. Alternatively, a number of external terminals may be maintained, but provide for an expanded set of commands and/or address space.

Abstract: Described apparatuses and methods are directed to equalization with pulse-amplitude modulation (PAM) signaling. As bus frequencies have increased, the time for correctly transitioning between voltage levels has decreased, which can lead to errors. Symbol decoding reliability can be improved with equalization, like with decision-feedback equalization (DFE). DFE, however, can be expensive for chip area and power usage. Therefore, instead of applying DFE to all voltage level determination paths in a receiver, DFE can be applied to a subset of such determination paths. With PAM4 signaling, for example, a DFE circuit can be coupled between an output and an input of a middle slicer. In some cases, symbol detection reliability can be maintained even with fewer DFE circuits by compressing a middle eye of the PAM4 signal. The other two eyes thus have additional headroom for expansion. Encoding schemes, impedance terminations, or reference voltage levels can be tailored accordingly.

Abstract: Apparatuses and methods including memory commands for semiconductor memories are described. A controller provides a memory system with memory commands to access memory. The commands are decoded to provide internal signals and commands for performing operations, such as operations to access the memory array. The memory commands provided for accessing memory may include timing command and access commands. Examples of access commands include a read command and a write command. Timing commands may be used to control the timing of various operations, for example, for a corresponding access command. The timing commands may include opcodes that set various modes of operation during an associated access operation for an access command.

Abstract: Methods, systems, and devices for die location detection for grouped memory dies are described. A memory device may include multiple memory die that are coupled with a shared bus. In some examples, each memory die may include a circuit configured to output an identifier associated with a location of the respective memory die. For example, a first memory die may output a first identifier, based on receiving one or more signals, that identifies a location of the first memory die. Identifying the locations of the respective memory dies may allow for the dies to be individually accessed despite being coupled with a shared bus.