Patents by Inventor Kao-Tsair Tsai

Kao-Tsair Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7598155
    Abstract: A method of manufacturing an overlay mark is provided. Two first X-direction isolation structures, two first Y-direction isolation structures, two second X-direction isolation structures, and two second Y-direction isolation structures are formed in a substrate, where the first X-direction isolation structures and the first Y-direction isolation structures are arranged to a first rectangle, and the second X-direction isolation structures and the second Y-direction isolation structures are arranged to a second rectangle. The second rectangle is located in the first rectangle. A first dielectric layer and a conductive layer are formed sequentially on the substrate. A planarization process is performed to remove a portion of the conductive layer till the isolation structures are exposed. A second dielectric layer is formed on the substrate. A rectangle pattern is formed on the second dielectric layer. The sides of the rectangle pattern are located above the isolation structures.
    Type: Grant
    Filed: April 29, 2008
    Date of Patent: October 6, 2009
    Assignee: Winbond Electronics Corp.
    Inventors: Min-Hung Chen, Kao-Tsair Tsai
  • Patent number: 7223527
    Abstract: An immersion lithography process is described. First, a photoresist layer on a material layer is formed. Then, an acid compensation layer is formed on the photoresist layer. An immersion exposure step is performed on the acid compensation layer and the photoresist layer. The acid compensation layer contains a photo-acid generator with a concentration of the photo-acid higher than that produced by a photo-acid generator in the photoresist layer after the immersion exposure step. Then, a development step is performed to pattern the acid compensation layer and the photoresist layer.
    Type: Grant
    Filed: April 21, 2005
    Date of Patent: May 29, 2007
    Assignee: Winbond Electronics Corp.
    Inventors: Kao-Tsair Tsai, Jan-Nan Oue
  • Publication number: 20060238727
    Abstract: An immersion lithography process is described. First, a photoresist layer on a material layer is formed. Then, an acid compensation layer is formed on the photoresist layer. An immersion exposure step is performed on the acid compensation layer and the photoresist layer. The acid compensation layer contains a photo-acid generator with a concentration of the photo-acid higher than that produced by a photo-acid generator in the photoresist layer after the immersion exposure step. Then, a development step is performed to pattern the acid compensation layer and the photoresist layer.
    Type: Application
    Filed: April 21, 2005
    Publication date: October 26, 2006
    Inventors: Kao-Tsair Tsai, Jan-Nan Oue
  • Patent number: 7008729
    Abstract: First of all, a substrate applied in the lithography process is provided, and then a high transmission attenuate layer (HTAL) is formed on the substrate. Then an opaque layer is formed on the high transmission attenuate layer (HTAL), and then an ion-implanting process is performed in the high transmission attenuate layer (HTAL). Afterward, the opaque layer is etched to define a first phase region and a second phase region on the high transmission attenuate layer (HTAL). Subsequently, a photoresist layer is formed on the second phase region and the opaque layer to expose a partial surface of the high transmission attenuate layer (HTAL) that is located the first phase region. Then the partial surface of the high transmission attenuate layer (HTAL) that is located on the first phase region is etched through until a predetermined depth in the substrate.
    Type: Grant
    Filed: October 22, 2002
    Date of Patent: March 7, 2006
    Assignee: Winbond Electronics Corporation
    Inventors: Kao-Tsair Tsai, Chii-Ming Shiah, Yu-Cheng Tung
  • Patent number: 6791668
    Abstract: A semiconductor apparatus and method for upgrading uniformity of critical dimension by compensating the flare effect at wafer edge are disclosed. In one embodiment of the invention, the invention uses an exposure plate mounted on tilt pincettes which can protrude and retract from a wafer stage of a stepper to eliminate the alteration of uniformity of critical dimension at wafer edge. The exposure plate uses the tilt pincettes to tilt along with a wafer so as to keep planar with the wafer.
    Type: Grant
    Filed: August 13, 2002
    Date of Patent: September 14, 2004
    Assignee: Winbond Electronics Corporation
    Inventors: Kao-Tsair Tsai, Yasuko Tabata
  • Publication number: 20040076890
    Abstract: First of all, a substrate applied in the lithography process is provided, and then a high transmission attenuate layer (HTAL) is formed on the substrate. Then an opaque layer is formed on the high transmission attenuate layer (HTAL), and then an ion-implanting process is performed in the high transmission attenuate layer (HTAL). Afterward, the opaque layer is etched to define a first phase region and a second phase region on the high transmission attenuate layer (HTAL). Subsequently, a photoresist layer is formed on the second phase region and the opaque layer to expose a partial surface of the high transmission attenuate layer (HTAL) that is located the first phase region. Then the partial surface of the high transmission attenuate layer (HTAL) that is located on the first phase region is etched through until a predetermined depth in the substrate.
    Type: Application
    Filed: October 22, 2002
    Publication date: April 22, 2004
    Inventors: Kao-Tsair Tsai, Chii-Ming Shiah, Yu-Cheng Tung
  • Publication number: 20040032577
    Abstract: A semiconductor apparatus and method for upgrading uniformity of critical dimension by compensating the flare effect at wafer edge are disclosed. In one embodiment of the invention, the invention uses an exposure plate mounted on tilt pincettes which can protrude and retract from a wafer stage of a stepper to eliminate the alteration of uniformity of critical dimension at wafer edge. The exposure plate uses the tilt pincettes to tilt along with a wafer so as to keep planar with the wafer.
    Type: Application
    Filed: August 13, 2002
    Publication date: February 19, 2004
    Inventors: Kao-Tsair Tsai, Yasuko Tabata
  • Patent number: 6544695
    Abstract: A photomask set and a photolithographic operation suitable for forming a desired pattern on a photoresist layer. The photomask set includes a plurality of photomasks each having a different pattern thereon. To form an overall pattern on the photoresist layer, each photomask is used in turn in a multi-exposure operation.
    Type: Grant
    Filed: April 11, 2001
    Date of Patent: April 8, 2003
    Assignee: Winbond Electronics Corp.
    Inventors: Li-Ming Wang, Kao-Tsair Tsai
  • Patent number: 6509137
    Abstract: A multilayer photoresist process in photolithography, which is applicable on a substrate having a composite photoresist layer with a desired thickness formed thereon. The present invention provides a process, comprising the following steps. A photoresist layer is formed on a substrate, and subsequently exposed through a photomask, followed by the developing process to pattern the photoresist. Then, the patterned photoresist layer is stabilized. This sequence is repeated untill at least another one layer is deposited and patterned on the substrate. Each photoresist layer has almost the same pattern with the underlying patterned photoresist layer. Many thin photoresist layers are accumulated to form a composite photoresist layer with a desired thickness.
    Type: Grant
    Filed: May 24, 2000
    Date of Patent: January 21, 2003
    Assignee: Winbond Electronics Corp.
    Inventors: Li-Ming Wang, Kao-Tsair Tsai
  • Publication number: 20020150841
    Abstract: A photomask set and a photolithographic operation suitable for forming a desired pattern on a photoresist layer. The photomask set includes a plurality of photomasks each having a different pattern thereon. To form an overall pattern on the photoresist layer, each photomask is used in turn in a multi-exposure operation.
    Type: Application
    Filed: April 11, 2001
    Publication date: October 17, 2002
    Inventors: Li-Ming Wang, Kao-Tsair Tsai
  • Patent number: 6465160
    Abstract: A method for the mitigation of the generation of side-lobes in a photolithography process is described. The method includes the steps of forming a photoresist layer on a semiconductor substrate. An exposure process is conducted on the photoresist layer with a phase-shifting mask, transferring the pattern of the mask on the photoresist layer. After this, a post-exposure baking process is conducted on the photoresist layer after it has been exposed, followed by performing a development process to complete the patterning of the photoresist layer.
    Type: Grant
    Filed: February 24, 2000
    Date of Patent: October 15, 2002
    Assignee: Winbond Electronics Corp.
    Inventors: Li-Ming Wang, Kao-Tsair Tsai
  • Patent number: 6413685
    Abstract: A method of reducing the optical proximity effect of an exposed etch pattern occurred during a conventional photolithography process, wherein a primary pattern according to the present invention is first divided into a plurality of sub-patterns. Each of the sub-patterns formed on a photomask is then exposed under a light source to be sequentially transferred onto a corresponding photoresist layer during a photolithography process. Subsequently, the operating parameters of a stepper used in the photolithography process such as numerical perture, coherence, intensity of energy, and intensity of light are set according to the charts as shown in FIG. 5A, 5B, 6A, 6B, and 6C to obtain desirable critical dimensions, thereby reduces the optical proximity effect. Therefore, an etch pattern with different line pitches can be successfully transferred onto a photoresist layer with each critical dimension of the different line pitches accurately met according to the present invention.
    Type: Grant
    Filed: July 26, 2000
    Date of Patent: July 2, 2002
    Assignee: Winbond Electronics Corp.
    Inventors: Kao-Tsair Tsai, Li-Mimg Wang