Abstract: A method for manufacturing a semiconductor device or a semiconductor wafer is provided, in which a removal of slurry that is adherently remained on the back surface of the semiconductor wafer can be ensured without a need for employing an increased dimension of apparatus. An edge portion of a semiconductor wafer is polished while a back surface of the semiconductor wafer is chucked to a chucking unit of a first polishing unit, and then, the polished semiconductor wafer is dechucked from the chucking unit of the first polishing unit. Next, a predetermined gap is formed in a location above the chucking unit of the second polishing unit, and the semiconductor wafer is disposed therein. Water is discharged form the chucking unit of the second polishing unit to clean the back surface of the semiconductor wafer W. Thereafter, the back surface of the semiconductor wafer is chucked to the chucking unit of the second polishing unit, and then the semiconductor wafer is polished.

Abstract: A removing solution for removing tungsten metal which causes a film formation on a semiconductor substrate or adheres to it, wherein orthoperiodic acid and water are contained.

Abstract: A method of collecting impurities existing on the surface of a semiconductor wafer and in a thin film formed on the semiconductor wafer is provided with a process for dripping collecting liquid on the surface of the semiconductor wafer to which hydrophobic processing is applied, a process for elongating the collecting liquid dripped and turned spherical by surface tension in a direction of the radius of the semiconductor wafer with the surface tension kept, a process for relatively rolling and scanning the elongated collecting liquid, touching the collecting liquid to the surface of the semiconductor wafer and incorporating impurities into the collecting liquid, a process for restoring the elongated collecting liquid to the original spherical shape after the impurities are incorporated and a process for withdrawing the collecting liquid restored to the spherical shape from the surface of the semiconductor wafer.

Abstract: A chemical solution treatment apparatus for dissolving and removing ruthenium-based metal adhering to a substrate by a chemical solution, includes: a chemical solution treatment unit; a reservoir unit; and a chemical solution circulation system. The chemical solution inside treatment unit comprises a chemical solution supplying nozzle, and a recovering mechanism. The reservior unit has a structure having a clearence part to be in contact with the chemical solution so that gas components derived from the ruthenium-based metal dissolved and removed in said chemical solution treatment are volatilized outside the chemical solution during circulation of the chemical solution, and comprises an exhaust duct.

Abstract: The present invention relates to a chemical solution treatment apparatus for dissolving and removing ruthenium-based metal adhering to a substrate by a chemical solution, comprising: a chemical solution treatment unit which make the substrate come into contact with said chemical solution; a reservoir unit for storing the chemical solution which is used in said chemical solution treatment unit; and a chemical solution circulation system having said reservoir unit, a chemical solution supplying means for supplying the chemical solution inside said reservoir unit to said chemical solution treatment unit, and a chemical solution returning means for returning the chemical solution, which is used and recovered in said chemical solution treatment unit, to said reservoir unit, wherein: said chemical solution treatment unit comprises a chemical solution supplying nozzle for supplying the chemical solution to the substrate, and a recovering mechanism for recovering the used chemical solution; said reservoir unit has a

Abstract: A method for removing contamination on a semiconductor substrate is disclosed. The contamination contains at least one element belonging to one of 3A group, 3B group and 4A group of long-period form of periodic system of elements. The method comprises first and second process steps. The first process is wet processing the semiconductor substrate by first remover liquid that contains one of acid and alkali. The second process is wet processing the semiconductor substrate by second remover liquid that contains oxidizing reagent and one of hydrofluoric acid and salt of hydrofluoric acid.

Abstract: A method of collecting impurities existing on the surface of a semiconductor wafer and in a thin film formed on the semiconductor wafer is provided with a process for dripping collecting liquid on the surface of the semiconductor wafer to which hydrophobic processing is applied, a process for elongating the collecting liquid dripped and turned spherical by surface tension in a direction of the radius of the semiconductor wafer with the surface tension kept, a process for relatively rolling and scanning the elongated collecting liquid, touching the collecting liquid to the surface of the semiconductor wafer and incorporating impurities into the collecting liquid, a process for restoring the elongated collecting liquid to the original spherical shape after the impurities are incorporated and a process for withdrawing the collecting liquid restored to the spherical shape from the surface of the semiconductor wafer.

Abstract: A ruthenium containing metal 6′ adhering to a periphery of a device forming area, an end face and a rear face in a silicon substrate 10 is removed using a first remover containing (a) at least one compound selected from the group consisting of salts containing chlorate, perchlorate, iodate, periodate, salts containing bromine oxide ion, salts containing manganese oxide ion and salts containing tetravalent cerium ion and (b) at least one acid selected from the group consisting of nitric acid, acetic acid, iodic acid and chloric acid. After the removing treatment, the substrate is washed with hydrofluoric acid to remove the residual remover.

Abstract: A method for removing a ruthenium-containing metal includes the step of applying a remover to a semiconductor substrate. The remover includes a cerium (IV) nitrate salt and nitric acid.

Abstract: A mixed aqueous solution containing HCl with a concentration of 10 to 25% by weight, H2O2 with a concentration of 2 to 5% by weight, and HF with a concentration of 0.01 to 2% by weight or a mixed aqueous solution containing H2SO4 with a concentration of 65 to 82% by weight, H2O2 with a concentration of 4 to 16% by weight, and HF with a concentration of 0.01 to 2% by weight is used as a platinum group impurity recovery liquid. The recovery liquid is dripped onto a silicon substrate surface or a film thereon so as to scan the entire surface of the substrate with the droplets. As a result, the platinum group impurity is dissolved into the recovery liquid, and the platinum group impurity is thus recovered.

Abstract: The present invention relates to a cleaning solution which can reliably remove the platinum group metal (e.g. Pt or Ir) contaminants adhering on the silicon-based insulating film (e.g. silicon oxide film) formed on a semiconductor substrate and further can prevent the readhesion of the removed contaminants, as well as to a cleaning method using said cleaning solution. Since the cleaning solution consists of HPFM or SPFM which is a mixture of a hydrochloric acid-hydrogen peroxide (HPM) or sulfuric acid-hydrogen peroxide (SPM) solution with a very small amount of hydrofluoric acid, the contaminants adhering on the silicon-based insulating film can be reduced to a level lower than 1×1010 atoms/cm2.

Abstract: This invention provides a remover comprising (a) a cerium (IV) nitrate salt and (b) at least one acid selected from the group consisting of nitric acid, perchloric acid and acetic acid.

Abstract: A ruthenium containing metal 6′ adhering to a periphery of a device forming area, an end face and a rear face in a silicon substrate 10 is removed using a first remover containing (a) at least one compound selected from the group consisting of salts containing chlorate, perchlorate, iodate, periodate, salts containing bromine oxide ion, salts containing manganese oxide ion and salts containing tetravalent cerium ion and (b) at least one acid selected from the group consisting of nitric acid, acetic acid, iodic acid and chloric acid. After the removing treatment, the substrate is washed with hydrofluoric acid to remove the residual remover.

Abstract: A process for producing, starting from a silicon substrate, a semiconductor device having a capacitor part comprising platinum group metal electrodes and a ferroelectric film, which process comprises a cleaning step of cleaning and removing the platinum group metal-derived contaminants adhering onto (1) the silicon-based insulating film formed in contact with the platinum group metal of the electrode(s) and (2) the back surface of the silicon substrate, by using a cleaning solution comprising a chemical solution for metal removal and very small amounts of hydrofluoric acid and a chelating agent. This process can remove platinum group metal-derived contaminants reliably and can prevent the re-adhesion of the once-removed contaminants.

Abstract: A semiconductor substrate surface analysis pre-processing apparatus has a substrate section which holds a decomposition/collecting liquid that is caused to come into contact with the entire surface of a substrate to be surface-analyzed, a substrate transport section which holds the substrate to be surface-analyzed, and which moves the substrate between a substrate carrier and the substrate processing section, a supply and ejection means for the decomposition/collecting liquid, and a processing operation means that performs either ultrasonic or heat processing with respect to the substrate processing section.

Abstract: In a wet processing apparatus, an electrolytic cell, a first storing cell for storing anode active water of the electrolytic cell, a first processing cell for processing a target with the anode active water of the first storing cell, a second storing cell for storing cathode active water of the electrolytic cell, and a second processing cell for processing a target with the cathode active water of the second storing cell are provided. Also, a first reactivating feedback path is provided between the first processing cell and an anode region of the electrolytic cell, and a second reactivating feedback path is provided between the second processing cell and a cathode region of the electrolytic cell.