Abstract: According to one embodiment, there is provided an actinic ray- or radiation-sensitive resin composition including (A) a compound represented by a general formula (1) below that generates an acid when exposed to actinic rays or radiation, and (B) a resin.

Abstract: There is provided a pattern forming method comprising (1) a step of forming a film by using an electron beam-sensitive or extreme ultraviolet-sensitive resin composition containing (A) a resin that contains a repeating unit having a partial structure represented by the specific formula and can decrease the solubility for a developer containing an organic solvent by the action of an acid, and (B) a compound capable of generating an acid upon irradiation with an electron beam or an extreme ultraviolet ray, (2) a step of exposing the film by using an electron beam or an extreme ultraviolet ray, and (4) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern.

Abstract: According to one embodiment, there is provided an actinic ray- or radiation-sensitive resin composition containing (A) a resin containing a repeating unit represented by general formula (1) below and a repeating unit that is decomposed by an action of an acid to generate an alkali-soluble group, and (B) a compound that generates the acid when exposed to actinic rays or radiation, where L represents a bivalent connecting group, R1 represents a hydrogen atom or an alkyl group, and Z represents a cyclic acid anhydride structure.

Abstract: A pattern forming method contains: (i) a step of forming a first film on a substrate by using a first resin composition (I), (ii) a step of forming a second film on the first film by using a second resin composition (II) different from the resin composition (I), (iii) a step of exposing a multi-layered film having the first film and the second film, and (iv) a step of developing the first film and the second film in the exposed multi-layered film by using an organic solvent-containing developer to form a negative pattern.

Abstract: A pattern forming method comprising (i) a step of forming a film from a chemical amplification resist composition (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the chemical amplification resist composition contains (A) a resin containing a repeating unit having two or more hydroxyl groups, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (C) a crosslinking agent and (D) a solvent; a pattern formed by the pattern forming method; a chemical amplification resist composition used in the pattern forming method; and a resist film formed using the chemical amplification resist composition.

Abstract: A pattern forming method contains: (i) a step of forming a bottom anti-reflective coating on a substrate by using a first resin composition (I), (ii) a step of forming a resist film on the bottom anti-reflective coating by using a second resin composition (II), (iii) a step of exposing a multi-layered film having the bottom anti-reflective coating and the resist film, and (iv) a step of developing the bottom anti-reflective coating and the resist film in the exposed multi-layered film by using an organic solvent-containing developer to form a negative pattern.

Abstract: Provided is an actinic ray-sensitive or radiation-sensitive resin composition including: (A) a resin capable of increasing the solubility in an alkali developer by the action of an acid, the resin containing (a) a repeating unit represented by the following formula (AN-01), (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a resin that contains at least either a fluorine atom or a silicon atom and contains a repeating unit having a group capable of decomposing by the action of an alkali developer to increase the solubility in an alkali developer: wherein the variables in formula (AN-01) are defined in the description.

Abstract: Provided is an actinic ray-sensitive or radiation-sensitive resin composition including: (A) a resin capable of increasing the solubility in an alkali developer by the action of an acid, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a resin which contains (c) a repeating unit having at least one polarity conversion group and has at least either a fluorine atom or a silicon atom.

Abstract: There is provided a pattern forming method comprising (1) a step of forming a film by using an electron beam-sensitive or extreme ultraviolet-sensitive resin composition, (2) a step of exposing the film by using an electron beam or an extreme ultraviolet ray, and (3) a step of developing the exposed film by using an organic solvent-containing developer, wherein the electron beam-sensitive or extreme ultraviolet-sensitive resin composition contains (A) a resin containing (R) a repeating unit having a structural moiety capable of decomposing upon irradiation with an electron beam or an extreme ultraviolet ray to generate an acid, and (B) a solvent.

Abstract: Provided is an actinic-ray- or radiation-sensitive resin composition, including any of compounds of general formula (1) below that when exposed to actinic rays or radiation, is decomposed to thereby generate an acid and a resin that when acted on by an acid, is decomposed to thereby increase its solubility in an alkali developer.

Abstract: A pattern forming method includes: (i) forming a film from a chemical amplification resist composition that contains (A) a resin, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation and (C) a tertiary alcohol; (ii) exposing the film; and (iii) performing development by using a developer containing an organic solvent.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition, includes: (A) a resin capable of increasing the solubility of the resin (A) in an alkali developer by the action of an acid; and (C) a resin having at least either a fluorine atom or a silicon atom and containing (c) a repeating unit having at least two or more polarity conversion groups.

Abstract: A pattern forming method comprising: (i) a step of forming a film from a chemical amplification resist composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the resist composition contains: (A) a resin, (B) a nonionic compound capable of generating an acid upon irradiation with an actinic ray or radiation, (C) a crosslinking agent, and (D) a solvent.

Abstract: A pattern forming method includes: (i) forming a film from a chemical amplification resist composition that contains (A) a resin, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation and (C) a tertiary alcohol; (ii) exposing the film; and (iii) performing development by using a developer containing an organic solvent.

Abstract: Provided is a method of forming pattern including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, and (c) developing the exposed film with a developer containing a first organic solvent, wherein in the developer, particles each having a diameter of 0.3 ?m or greater amount to a density of 30 particles/ml or less.

Abstract: There is provided a pattern forming method comprising: (i) a step of forming a first film on a substrate by using a first resin composition (I), (ii) a step of forming a second film on the first film by using a second resin composition (II) different from the resin composition (I), (iii) a step of exposing a multi-layered film having the first film and the second film, and (iv) a step of developing the first film and the second film in the exposed multi-layered film by using an organic solvent-containing developer to form a negative pattern.

Abstract: Provided is a method of forming pattern including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, and (c) developing the exposed film with a developer containing a first organic solvent, wherein in the developer, particles each having a diameter of 0.3 ?m or greater amount to a density of 30 particles/ml or less.

Abstract: According to one embodiment, an actinic-ray- or radiation-sensitive resin composition comprises a hydrophobic resin (HR) containing a fluorine atom, wherein the hydrophobic resin (HR) comprises any of repeating units (a) of general formula (I) or (II) below:

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition, wherein when a film having a film thickness of 100 nm is formed from the actinic ray-sensitive or radiation-sensitive resin composition, the film has a transmittance of 55 to 80% for light at a wavelength of 193 nm, and a pattern forming method using the composition are provided.

Abstract: A negative pattern forming method, includes: (i) forming a film having a film thickness of 200 nm or more from a chemical amplification resist composition containing (A) a resin capable of increasing a polarity of the resin (A) by an action of an acid to decrease a solubility of the resin (A) for a developer containing one or more organic solvents, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent; (ii) exposing the film, so as to form an exposed film; and (iii) developing the exposed film with a developer containing one or more organic solvents.