Abstract: The present invention enables easy finding of software that includes a functionality required by a user. A server 1 in an information processing system is provided with a reception unit 112, an expression form conversion unit 113, a selection condition setting unit 114, and a presentation unit 115. The reception unit 112 receives, in a form that includes a universal first expression form, a user request for software. The expression form conversion unit 113 converts the request received in the first expression form to a specialized second expression form. The selection condition setting unit 114 sets one or more selection conditions for selecting software on the basis of the request, which has been converted to the second expression form. The presentation unit 115 presents one or more pieces of software to a user on the basis of the one or more selection conditions.

Abstract: An electrophotographic member includes a base layer, an elastic layer, and a surface layer stacked in this order. The surface layer contains a fluorine resin and a fluorine rubber, the fluorine rubber is contained at a proportion of 0.5 parts by mass or more and 1.0 parts by mass or less with respect to 1 part by mass of the fluorine resin, and the surface layer further contains a compound represented by formula (1): CH3(CH2)m—O—((CH2)lO)n—OH??(1) In formula (1), m, l, and n each independently represent an integer of 1 or more.

Abstract: A semiconductor optical amplifier integrated laser includes a semiconductor laser oscillator portion that oscillates laser light having a wavelength included in a gain band and a semiconductor optical amplifier portion that amplifies laser light output from the semiconductor laser oscillator portion. The semiconductor laser oscillator portion and the semiconductor optical amplifier portion have one common p-i-n structure, the common p-i-n structure includes an active layer, a cladding layer provided apart from the active layer, and a common functional layer formed in the cladding layer, and the common functional layer includes a first portion that reflects light having a wavelength within the gain band in the semiconductor laser oscillator portion and a second portion that transmits light having a wavelength within the gain band in the semiconductor optical amplifier portion.

Abstract: An intermediary transfer belt having surface resistivity ?s of 1×109 ?/square or more and volume resistivity ?v of 1×1012 ?·cm or less includes a thermoplastic resin material containing carbon black. The carbon black contained in the thermoplastic resin material has a weight ratio of 22.5-28.5 weight % and include first carbon black and second carbon black. The first carbon black of the carbon black contained in the thermoplastic resin material has a weight ratio of 50-90 weight % and dibutyl phthalate absorption of 93-127 ml/100 g, and the second carbon black of the carbon black contained in the thermoplastic resin material has a weight ratio of 10-50 weight % and dibutyl phthalate absorption of 36-79 ml/100 g.

Abstract: A semiconductor optical amplifier integrated laser includes a semiconductor laser oscillator portion that oscillates laser light having a wavelength included in a gain band and a semiconductor optical amplifier portion that amplifies laser light output from the semiconductor laser oscillator portion. The semiconductor laser oscillator portion and the semiconductor optical amplifier portion have one common p-i-n structure, the common p-i-n structure includes an active layer, a cladding layer provided apart from the active layer, and a common functional layer formed in the cladding layer, and the common functional layer includes a first portion that reflects light having a wavelength within the gain band in the semiconductor laser oscillator portion and a second portion that transmits light having a wavelength within the gain band in the semiconductor optical amplifier portion.

Abstract: A electro-absorption optical modulator includes a multiple quantum well composed of a plurality of layers including a plurality of quantum well layers and a plurality of barrier layers that are alternately stacked, the plurality of quantum well layers and the plurality of barrier layers including an acceptor and a donor; a p-type semiconductor layer in contact with an uppermost layer of the plurality of layers; and an n-type semiconductor layer in contact with a lowermost layer of the plurality of layers, the multiple quantum well being 10% or more and 150% or less of the p-type semiconductor layer in a p-type carrier concentration, and in the multiple quantum well, an effective carrier concentration which corresponds to a difference between the p-type carrier concentration and an n-type carrier concentration is ±10% or less of the p-type carrier concentration of the multiple quantum well.

Abstract: An electrophotographic belt having an endless shape and including an endless-shaped base layer, an elastic layer on an outer peripheral surface of the base layer, and a surface layer on the outer peripheral surface of the elastic layer, and the surface layer contains a urethane resin as a binder, polytetrafluoroethylene particles, and a compound having a perfluoropolyether structure and an oxyalkylene structure.

Abstract: An electrophotographic belt including: a base layer, an elastic layer formed on the base layer, and a surface layer formed on the elastic layer. The surface layer contains a binder resin and polytetrafluoroethylene particles. A content of the polytetrafluoroethylene particles is 200 parts by mass or more with respect to 100 parts by mass of the binder resin. The polytetrafluoroethylene particles have a number average particle diameter of 200 nm or less.

Abstract: An electrophotographic belt including: a base layer, an elastic layer formed on the base layer, and a surface layer formed on the elastic layer. The surface layer contains a binder resin and polytetrafluoroethylene particles. A content of the polytetrafluoroethylene particles is 200 parts by mass or more with respect to 100 parts by mass of the binder resin. The polytetrafluoroethylene particles have a number average particle diameter of 200 nm or less.

Abstract: An electrophotographic belt having an endless shape and including an endless-shaped base layer, an elastic layer on an outer peripheral surface of the base layer, and a surface layer on the outer peripheral surface of the elastic layer, and the surface layer contains a urethane resin as a binder, polytetrafluoroethylene particles, and a compound having a perfluoropolyether structure and an oxyalkylene structure.

Abstract: A semiconductor optical amplifier integrated laser includes a semiconductor laser oscillator portion that oscillates laser light having a wavelength included in a gain band and a semiconductor optical amplifier portion that amplifies laser light output from the semiconductor laser oscillator portion. The semiconductor laser oscillator portion and the semiconductor optical amplifier portion have one common p-i-n structure, the common p-i-n structure includes an active layer, a cladding layer provided apart from the active layer, and a common functional layer formed in the cladding layer, and the common functional layer includes a first portion that reflects light having a wavelength within the gain band in the semiconductor laser oscillator portion and a second portion that transmits light having a wavelength within the gain band in the semiconductor optical amplifier portion.

Abstract: A electro-absorption optical modulator includes a multiple quantum well composed of a plurality of layers including a plurality of quantum well layers and a plurality of barrier layers that are alternately stacked, the plurality of quantum well layers and the plurality of barrier layers including an acceptor and a donor; a p-type semiconductor layer in contact with an uppermost layer of the plurality of layers; and an n-type semiconductor layer in contact with a lowermost layer of the plurality of layers, the multiple quantum well being 10% or more and 150% or less of the p-type semiconductor layer in a p-type carrier concentration, and in the multiple quantum well, an effective carrier concentration which corresponds to a difference between the p-type carrier concentration and an n-type carrier concentration is ±10% or less of the p-type carrier concentration of the multiple quantum well.

Abstract: An intermediary transfer belt includes a base layer; an elastic layer laminated on or above the base layer and formed with a silicone rubber as an elastic member; an intermediary layer laminated on or above the elastic layer; and a surface layer laminated on or above the intermediary layer. The elastic layer is 60 degrees or less in JIS-A hardness and is 5 degrees or more in JIS-E hardness. The intermediary layer is 0.1 g/m2·24 h or more and 600 g/m2·24 h or less in water vapor permeability coefficient and is 1 ?m or more and 15 ?m or less in average thickness.

Abstract: An intermediary transfer belt includes a base layer; an elastic layer laminated on or above the base layer and formed with a silicone rubber as an elastic member; an intermediary layer laminated on or above the elastic layer; and a surface layer laminated on or above the intermediary layer. The elastic layer is 60 degrees or less in JIS-A hardness and is 5 degrees or more in JIS-E hardness. The intermediary layer is 0.1 g/m2·24 h or more and 600 g/m2·24 h or less in water vapor permeability coefficient and is 1 ?m or more and 15 ?m or less in average thickness.

Abstract: An intermediary transfer belt having surface resistivity ?s of 1×109 ?/square or more and volume resistivity ?v of 1×1012 ?·cm or less includes a thermoplastic resin material containing carbon black. The carbon black contained in the thermoplastic resin material has a weight ratio of 22.5-28.5 weight % and include first carbon black and second carbon black. The first carbon black of the carbon black contained in the thermoplastic resin material has a weight ratio of 50-90 weight % and dibutyl phthalate absorption of 93-127 ml/100 g, and the second carbon black of the carbon black contained in the thermoplastic resin material has a weight ratio of 10-50 weight % and dibutyl phthalate absorption of 36-79 ml/100 g.

Abstract: An optical semiconductor device includes an InP substrate; an active layer disposed above the InP substrate; a n-type semiconductor layer disposed below the active layer; and a p-type clad layer disposed above the active layer, wherein the p-type clad layer includes one or more p-type In1-xAlxP layers, the Al composition x of each of the one or more p-type In1-xAlxP layers is equal to or greater than a value corresponding to the doping concentration of a p-type dopant, and the absolute value of the average strain amount of the whole of the p-type clad layer is equal to or less than the absolute value of a critical strain amount obtained by Matthews' relational expression, using the entire layer thickness of the whole of the p-type clad layer as a critical layer thickness.

Abstract: An optical semiconductor device includes an InP substrate; an active layer disposed above the InP substrate; a n-type semiconductor layer disposed below the active layer; and a p-type clad layer disposed above the active layer, wherein the p-type clad layer includes one or more p-type In1-xAlxP layers, the Al composition x of each of the one or more p-type In1-xAlxP layers is equal to or greater than a value corresponding to the doping concentration of a p-type dopant, and the absolute value of the average strain amount of the whole of the p-type clad layer is equal to or less than the absolute value of a critical strain amount obtained by Matthews' relational expression, using the entire layer thickness of the whole of the p-type clad layer as a critical layer thickness.

Abstract: Provided is a display device including: a substrate; and multiple pixels provided on the substrate, the pixels each having an organic EL element obtained by laminating a lower electrode provided on the substrate, an organic compound layer, and an upper electrode in the stated order, and the lower electrode including an electrode independently placed for each of the pixels, in which: the lower electrode is formed of a first lower electrode layer provided on the substrate and a second lower electrode layer provided on the first lower electrode layer; the organic compound layer and the upper electrode cover the first lower electrode layer and the second lower electrode layer; and charge injection property from the second lower electrode layer into the organic compound layer is larger than charge injection property from an end portion of the first lower electrode layer into the organic compound layer.

Abstract: A dimming method of an organic EL displaying apparatus having a displaying unit constructed by combining pixels each having a substrate, an organic EL element formed over the substrate, a power supply line for supplying a power source to the organic EL element, and at least one TFT provided on a wiring path from the power supply line to the organic EL element. The TFT has a semiconductor layer which is arranged between a source electrode and a drain electrode and is electrically connected to the source electrode and the drain electrode. A laser beam is irradiated from a downward direction of the substrate to a region which does not overlap a gate electrode, the source electrode, the drain electrode, and the wiring layer when seen as a plan view in a plane region where the semiconductor layer is provided.

Abstract: An active matrix organic electroluminescence(EL) display comprises plural selection and data lines mutually crossed, and a pixel circuit connected to the selection and data lines and having switching devices, a storage capacitor and an organic EL device. In a part of a period that the pixel circuit connected to the selection line is being selected, an applied first data signal is held as a voltage at the storage capacitor of the selected pixel circuit. After the selection signal applying, a first current according to the held voltage is supplied to the organic EL device, and this emits light at luminance according to the first current. In another part of the period, a second current according to an applied second data signal is supplied to the organic EL device of the selected pixel circuit, and this emits light at luminance according to the second current.