Patents by Inventor Kaoru Okamoto

Kaoru Okamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11556082
    Abstract: An intermediary transfer belt having surface resistivity ?s of 1×109 ?/square or more and volume resistivity ?v of 1×1012 ?·cm or less includes a thermoplastic resin material containing carbon black. The carbon black contained in the thermoplastic resin material has a weight ratio of 22.5-28.5 weight % and include first carbon black and second carbon black. The first carbon black of the carbon black contained in the thermoplastic resin material has a weight ratio of 50-90 weight % and dibutyl phthalate absorption of 93-127 ml/100 g, and the second carbon black of the carbon black contained in the thermoplastic resin material has a weight ratio of 10-50 weight % and dibutyl phthalate absorption of 36-79 ml/100 g.
    Type: Grant
    Filed: July 10, 2019
    Date of Patent: January 17, 2023
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Ryosuke Tsuruga, Toshiyuki Yoshida, Jun Ohira, Akeshi Asaka, Hiroto Sugimoto, Takanori Ueno, Koji Sato, Midai Suzuki, Atsushi Hori, Kaoru Okamoto, Megumi Uchino, Kazuhisa Shirayama, Naoto Kameyama, Kiyonori Soutome, Shigeo Kuroda, Akira Okano, Hiroshi Tominaga
  • Patent number: 11552448
    Abstract: A semiconductor optical amplifier integrated laser includes a semiconductor laser oscillator portion that oscillates laser light having a wavelength included in a gain band and a semiconductor optical amplifier portion that amplifies laser light output from the semiconductor laser oscillator portion. The semiconductor laser oscillator portion and the semiconductor optical amplifier portion have one common p-i-n structure, the common p-i-n structure includes an active layer, a cladding layer provided apart from the active layer, and a common functional layer formed in the cladding layer, and the common functional layer includes a first portion that reflects light having a wavelength within the gain band in the semiconductor laser oscillator portion and a second portion that transmits light having a wavelength within the gain band in the semiconductor optical amplifier portion.
    Type: Grant
    Filed: June 15, 2020
    Date of Patent: January 10, 2023
    Assignee: Lumentum Japan, Inc.
    Inventors: Atsushi Nakamura, Kaoru Okamoto, Masatoshi Arasawa, Tetsuya Nishida, Yasushi Sakuma, Shigetaka Hamada, Ryosuke Nakajima
  • Publication number: 20220274333
    Abstract: A three-dimensional shaping device includes: an ejection head including a nozzle configured to eject a binder containing water, a water-soluble resin, and a wetting agent, an individual liquid chamber communicating with the nozzle, an inflow path configured to flow the binder into the individual liquid chamber, and an outflow path configured to flow the binder out of the individual liquid chamber; and a circulation flow path configured to circulate the binder flowing out of the outflow path to the inflow path.
    Type: Application
    Filed: February 23, 2022
    Publication date: September 1, 2022
    Inventors: Eiji Okamoto, Toshimitsu Hirai, Kaoru Momose, Takayuki Yokoyama
  • Patent number: 11329450
    Abstract: A electro-absorption optical modulator includes a multiple quantum well composed of a plurality of layers including a plurality of quantum well layers and a plurality of barrier layers that are alternately stacked, the plurality of quantum well layers and the plurality of barrier layers including an acceptor and a donor; a p-type semiconductor layer in contact with an uppermost layer of the plurality of layers; and an n-type semiconductor layer in contact with a lowermost layer of the plurality of layers, the multiple quantum well being 10% or more and 150% or less of the p-type semiconductor layer in a p-type carrier concentration, and in the multiple quantum well, an effective carrier concentration which corresponds to a difference between the p-type carrier concentration and an n-type carrier concentration is ±10% or less of the p-type carrier concentration of the multiple quantum well.
    Type: Grant
    Filed: April 10, 2020
    Date of Patent: May 10, 2022
    Assignee: Lumentum Japan, Inc.
    Inventors: Atsushi Nakamura, Takeshi Kitatani, Kaoru Okamoto, Shigenori Hayakawa
  • Patent number: 11281128
    Abstract: An electrophotographic belt having an endless shape and including an endless-shaped base layer, an elastic layer on an outer peripheral surface of the base layer, and a surface layer on the outer peripheral surface of the elastic layer, and the surface layer contains a urethane resin as a binder, polytetrafluoroethylene particles, and a compound having a perfluoropolyether structure and an oxyalkylene structure.
    Type: Grant
    Filed: April 30, 2021
    Date of Patent: March 22, 2022
    Assignee: Canon Kabushiki Kaisha
    Inventors: Naoto Kameyama, Kaoru Okamoto, Atsushi Hori
  • Patent number: 11188011
    Abstract: An electrophotographic belt including: a base layer, an elastic layer formed on the base layer, and a surface layer formed on the elastic layer. The surface layer contains a binder resin and polytetrafluoroethylene particles. A content of the polytetrafluoroethylene particles is 200 parts by mass or more with respect to 100 parts by mass of the binder resin. The polytetrafluoroethylene particles have a number average particle diameter of 200 nm or less.
    Type: Grant
    Filed: April 27, 2021
    Date of Patent: November 30, 2021
    Assignee: Canon Kabushiki Kaisha
    Inventors: Kaoru Okamoto, Atsushi Hori, Naoto Kameyama
  • Publication number: 20210341858
    Abstract: An electrophotographic belt including: a base layer, an elastic layer formed on the base layer, and a surface layer formed on the elastic layer. The surface layer contains a binder resin and polytetrafluoroethylene particles. A content of the polytetrafluoroethylene particles is 200 parts by mass or more with respect to 100 parts by mass of the binder resin. The polytetrafluoroethylene particles have a number average particle diameter of 200 nm or less.
    Type: Application
    Filed: April 27, 2021
    Publication date: November 4, 2021
    Inventors: Kaoru Okamoto, Atsushi Hori, Naoto Kameyama
  • Publication number: 20210341859
    Abstract: An electrophotographic belt having an endless shape and including an endless-shaped base layer, an elastic layer on an outer peripheral surface of the base layer, and a surface layer on the outer peripheral surface of the elastic layer, and the surface layer contains a urethane resin as a binder, polytetrafluoroethylene particles, and a compound having a perfluoropolyether structure and an oxyalkylene structure.
    Type: Application
    Filed: April 30, 2021
    Publication date: November 4, 2021
    Inventors: Naoto Kameyama, Kaoru Okamoto, Atsushi Hori
  • Publication number: 20210234333
    Abstract: A semiconductor optical amplifier integrated laser includes a semiconductor laser oscillator portion that oscillates laser light having a wavelength included in a gain band and a semiconductor optical amplifier portion that amplifies laser light output from the semiconductor laser oscillator portion. The semiconductor laser oscillator portion and the semiconductor optical amplifier portion have one common p-i-n structure, the common p-i-n structure includes an active layer, a cladding layer provided apart from the active layer, and a common functional layer formed in the cladding layer, and the common functional layer includes a first portion that reflects light having a wavelength within the gain band in the semiconductor laser oscillator portion and a second portion that transmits light having a wavelength within the gain band in the semiconductor optical amplifier portion.
    Type: Application
    Filed: June 15, 2020
    Publication date: July 29, 2021
    Inventors: Atsushi NAKAMURA, Kaoru OKAMOTO, Masatoshi ARASAWA, Tetsuya NISHIDA, Yasushi SAKUMA, Shigetaka HAMADA, Ryosuke NAKAJIMA
  • Publication number: 20210057885
    Abstract: A electro-absorption optical modulator includes a multiple quantum well composed of a plurality of layers including a plurality of quantum well layers and a plurality of barrier layers that are alternately stacked, the plurality of quantum well layers and the plurality of barrier layers including an acceptor and a donor; a p-type semiconductor layer in contact with an uppermost layer of the plurality of layers; and an n-type semiconductor layer in contact with a lowermost layer of the plurality of layers, the multiple quantum well being 10% or more and 150% or less of the p-type semiconductor layer in a p-type carrier concentration, and in the multiple quantum well, an effective carrier concentration which corresponds to a difference between the p-type carrier concentration and an n-type carrier concentration is ±10% or less of the p-type carrier concentration of the multiple quantum well.
    Type: Application
    Filed: April 10, 2020
    Publication date: February 25, 2021
    Inventors: Atsushi NAKAMURA, Takeshi KITATANI, Kaoru OKAMOTO, Shigenori HAYAKAWA
  • Patent number: 10768557
    Abstract: An intermediary transfer belt includes a base layer; an elastic layer laminated on or above the base layer and formed with a silicone rubber as an elastic member; an intermediary layer laminated on or above the elastic layer; and a surface layer laminated on or above the intermediary layer. The elastic layer is 60 degrees or less in JIS-A hardness and is 5 degrees or more in JIS-E hardness. The intermediary layer is 0.1 g/m2·24 h or more and 600 g/m2·24 h or less in water vapor permeability coefficient and is 1 ?m or more and 15 ?m or less in average thickness.
    Type: Grant
    Filed: December 17, 2019
    Date of Patent: September 8, 2020
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Kaoru Okamoto, Kazuhisa Shirayama, Ryosuke Tsuruga, Yasutomo Tsuji
  • Publication number: 20200201209
    Abstract: An intermediary transfer belt includes a base layer; an elastic layer laminated on or above the base layer and formed with a silicone rubber as an elastic member; an intermediary layer laminated on or above the elastic layer; and a surface layer laminated on or above the intermediary layer. The elastic layer is 60 degrees or less in JIS-A hardness and is 5 degrees or more in JIS-E hardness. The intermediary layer is 0.1 g/m2·24 h or more and 600 g/m2·24 h or less in water vapor permeability coefficient and is 1 ?m or more and 15 ?m or less in average thickness.
    Type: Application
    Filed: December 17, 2019
    Publication date: June 25, 2020
    Inventors: Kaoru Okamoto, Kazuhisa Shirayama, Ryosuke Tsuruga, Yasutomo Tsuji
  • Publication number: 20200019093
    Abstract: An intermediary transfer belt having surface resistivity ?s of 1×109 ?/square or more and volume resistivity ?v of 1×1012 ?·cm or less includes a thermoplastic resin material containing carbon black. The carbon black contained in the thermoplastic resin material has a weight ratio of 22.5-28.5 weight % and include first carbon black and second carbon black. The first carbon black of the carbon black contained in the thermoplastic resin material has a weight ratio of 50-90 weight % and dibutyl phthalate absorption of 93-127 ml/100 g, and the second carbon black of the carbon black contained in the thermoplastic resin material has a weight ratio of 10-50 weight % and dibutyl phthalate absorption of 36-79 ml/100 g.
    Type: Application
    Filed: July 10, 2019
    Publication date: January 16, 2020
    Inventors: Ryosuke Tsuruga, Toshiyuki Yoshida, Jun Ohira, Akeshi Asaka, Hiroto Sugimoto, Takanori Ueno, Koji Sato, Midai Suzuki, Atsushi Hori, Kaoru Okamoto, Megumi Uchino, Kazuhisa Shirayama, Naoto Kameyama, Kiyonori Soutome, Shigeo Kuroda, Akira Okano, Hiroshi Tominaga
  • Patent number: 10312665
    Abstract: An optical semiconductor device includes an InP substrate; an active layer disposed above the InP substrate; a n-type semiconductor layer disposed below the active layer; and a p-type clad layer disposed above the active layer, wherein the p-type clad layer includes one or more p-type In1-xAlxP layers, the Al composition x of each of the one or more p-type In1-xAlxP layers is equal to or greater than a value corresponding to the doping concentration of a p-type dopant, and the absolute value of the average strain amount of the whole of the p-type clad layer is equal to or less than the absolute value of a critical strain amount obtained by Matthews' relational expression, using the entire layer thickness of the whole of the p-type clad layer as a critical layer thickness.
    Type: Grant
    Filed: June 4, 2018
    Date of Patent: June 4, 2019
    Assignee: Oclaro Japan, Inc.
    Inventors: Takeshi Kitatani, Kaoru Okamoto, Kouji Nakahara
  • Publication number: 20180366909
    Abstract: An optical semiconductor device includes an InP substrate; an active layer disposed above the InP substrate; a n-type semiconductor layer disposed below the active layer; and a p-type clad layer disposed above the active layer, wherein the p-type clad layer includes one or more p-type In1-xAlxP layers, the Al composition x of each of the one or more p-type In1-xAlxP layers is equal to or greater than a value corresponding to the doping concentration of a p-type dopant, and the absolute value of the average strain amount of the whole of the p-type clad layer is equal to or less than the absolute value of a critical strain amount obtained by Matthews' relational expression, using the entire layer thickness of the whole of the p-type clad layer as a critical layer thickness.
    Type: Application
    Filed: June 4, 2018
    Publication date: December 20, 2018
    Inventors: Takeshi KITATANI, Kaoru OKAMOTO, Kouji NAKAHARA
  • Patent number: 9012927
    Abstract: Provided is a display device including: a substrate; and multiple pixels provided on the substrate, the pixels each having an organic EL element obtained by laminating a lower electrode provided on the substrate, an organic compound layer, and an upper electrode in the stated order, and the lower electrode including an electrode independently placed for each of the pixels, in which: the lower electrode is formed of a first lower electrode layer provided on the substrate and a second lower electrode layer provided on the first lower electrode layer; the organic compound layer and the upper electrode cover the first lower electrode layer and the second lower electrode layer; and charge injection property from the second lower electrode layer into the organic compound layer is larger than charge injection property from an end portion of the first lower electrode layer into the organic compound layer.
    Type: Grant
    Filed: November 6, 2012
    Date of Patent: April 21, 2015
    Assignee: Canon Kabushiki Kaisha
    Inventors: Kaoru Okamoto, Shigeru Kido, Manabu Otsuka, Nobuhiko Sato
  • Patent number: 8860301
    Abstract: A dimming method of an organic EL displaying apparatus having a displaying unit constructed by combining pixels each having a substrate, an organic EL element formed over the substrate, a power supply line for supplying a power source to the organic EL element, and at least one TFT provided on a wiring path from the power supply line to the organic EL element. The TFT has a semiconductor layer which is arranged between a source electrode and a drain electrode and is electrically connected to the source electrode and the drain electrode. A laser beam is irradiated from a downward direction of the substrate to a region which does not overlap a gate electrode, the source electrode, the drain electrode, and the wiring layer when seen as a plan view in a plane region where the semiconductor layer is provided.
    Type: Grant
    Filed: November 15, 2011
    Date of Patent: October 14, 2014
    Assignee: Canon Kabushiki Kaisha
    Inventors: Junya Tamaki, Takashi Moriyama, Nobuhiko Sato, Kaoru Okamoto, Yasushi Iwakura, Masahiro Fushimi
  • Patent number: 8643570
    Abstract: An active matrix organic electroluminescence(EL) display comprises plural selection and data lines mutually crossed, and a pixel circuit connected to the selection and data lines and having switching devices, a storage capacitor and an organic EL device. In a part of a period that the pixel circuit connected to the selection line is being selected, an applied first data signal is held as a voltage at the storage capacitor of the selected pixel circuit. After the selection signal applying, a first current according to the held voltage is supplied to the organic EL device, and this emits light at luminance according to the first current. In another part of the period, a second current according to an applied second data signal is supplied to the organic EL device of the selected pixel circuit, and this emits light at luminance according to the second current.
    Type: Grant
    Filed: June 25, 2008
    Date of Patent: February 4, 2014
    Assignee: Canon Kabushiki Kaisha
    Inventors: Kaoru Okamoto, Tadahiko Hirai, Jun Sumioka
  • Patent number: 8488918
    Abstract: Provided is a semiconductor optical device, which has a buried heterostructure structure and is formed in a structure capable of reducing a parasitic capacitance to further improve characteristics thereof, and also provided are an optical transmitter module, an optical transceiver module, and an optical transmission equipment. The semiconductor optical device includes a modulator portion for modulating light input along an emitting direction and radiating the modulated light, the modulator portion including: a mesa-stripe structure, which includes an active layer and extends in the emitting direction; and a buried layer provided adjacent to each side of the mesa-stripe structure, in which a distance between a lower surface of the buried layer and a lower surface of the active layer is 20% or more of a distance between the lower surface and an upper surface of the buried layer.
    Type: Grant
    Filed: May 16, 2011
    Date of Patent: July 16, 2013
    Assignee: Oclaro Japan, Inc.
    Inventors: Seiji Sumi, Shigenori Hayakawa, Kaoru Okamoto, Shunya Yamauchi, Yasushi Sakuma
  • Patent number: 8395613
    Abstract: A display apparatus includes a plurality of pixels disposed in a matrix pattern, each of the pixels emitting light, an acquisition unit for acquiring degradation characteristics of an emission luminance of each pixel from a video signal or a signal output from the pixel, and a detection unit for detecting a boundary of pixels showing different degradation characteristics of the plurality of pixels based on the degradation characteristics acquired by the acquisition unit. A calculation unit calculates a correction amount of the video signal to the pixels in a periphery of the boundary such that the emission luminance is gently varied in the periphery of the boundary when the plurality of pixels in the periphery of the boundary detected by the detection unit are caused to emit light with a same video signal. In addition, a correction unit corrects the video signal based on the calculated correction amount, and a video image is displayed by the plurality of pixels based on the corrected video signal.
    Type: Grant
    Filed: June 29, 2009
    Date of Patent: March 12, 2013
    Assignee: Canon Kabushiki Kaisha
    Inventors: Kaoru Okamoto, Jun Sumioka, Tadahiko Hirai