Patents by Inventor Kaoru Umemura

Kaoru Umemura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5120925
    Abstract: A method for device transplantation includes the conveyance of a microminiature device, which has been premanufactured, to a desired place located on a sample, observation and fabrication of the new device with a focused beam, and repair of passive elements or active elements located on the sample. Additionally, the new microminiature devices may be transplanted based on the observed results.
    Type: Grant
    Filed: May 4, 1990
    Date of Patent: June 9, 1992
    Assignee: Hitachi, Ltd.
    Inventors: Tsuyoshi Ohnishi, Yoshimi Kawanami, Yuuichi Madokoro, Kaoru Umemura, Tohru Ishitani
  • Patent number: 4841143
    Abstract: A charged particle beam apparatus is disclosed, which comprises a charged particle source; focusing means for focusing a charged particle beam emitted by the charged particle source on a sample and irradiating it therewith; deflecting means for deflecting the charged particle beam so as to scan the sample therewith; secondary ion separating means disposed approximately symmetrically with respect to the axis of the charged particle beam at the proximity of said sample and separating positive and negative secondary ions generated by the irradiation of the sample into positive and negative ions; and mass analyzers for analyzing the mass of the separated positive and negative secondary ions, respectively.
    Type: Grant
    Filed: February 25, 1988
    Date of Patent: June 20, 1989
    Assignee: Hitachi, Ltd.
    Inventors: Hifumi Tamura, Hiroyasu Shichi, Kaoru Umemura
  • Patent number: 4774414
    Abstract: This invention relates to a liquid metal ion source which melts a source material and extracts ions. Stable extraction of ions of at least one element selected from among As, P and B for a long period of time can be attained by using as a source material an alloy having a composition represented by the formula L.sub.X R.sub.Y M.sub.A wherein X, Y and A each stands for atomic percentage; L at least one element selected from among Pt, Pd and Ag; R at least one element selected from among As, P and B; M at least one element selected from among Ge, Si and Sb; 5<A<50; 40<X<70; and X+Y+A=100.
    Type: Grant
    Filed: August 12, 1987
    Date of Patent: September 27, 1988
    Assignee: Hitachi, Ltd.
    Inventors: Kaoru Umemura, Tohru Ishitani, Toshiyuki Aida, Hifumi Tamura
  • Patent number: 4755685
    Abstract: In an ion micro beam apparatus which consists of an ion source, a beam focusing system which accelerates, focuses, mass-separates and deflects the ions emitted from said ion source, and a specimen plate for finely moving the specimen, the improvement comprising a mass separator which is constituted by: at least two stages of focusing lenses in said beam focusing system; four stages of E.times.B deflectors arranged between the two stages of lenses, each of said E.times.B deflectors being comprised of a pair of electrodes and a pair of magnetic pole pieces to generate an electric field and a magnetic field in the directions perpendicular to an ion optical axis, wherein among the four stages of E.times.B deflectors, the electric fields and magnetic fields generated by the E.times.B deflectors of the second and third stages as counted from the side of the ion source are set to be in parallel with, but opposite to, the electric field and magnetic field generated by the E.times.
    Type: Grant
    Filed: October 16, 1986
    Date of Patent: July 5, 1988
    Assignee: Hitachi, Ltd.
    Inventors: Yoshimi Kawanami, Tohru Ishitani, Kaoru Umemura, Hifumi Tamura
  • Patent number: 4740698
    Abstract: A hybrid charged particle apparatus includes a charged particle source which is made up of a field-emission electron source for emitting an electron beam, a liquid-metal ion source for emitting an ion beam, and changeover means for replacing one of the electron and ion sources by the other at a predetermined place without varying a vacuum state, hybrid focusing/deflecting means for focusing and deflecting each of the electron beam and the ion beam electrostatically and electromagnetically to irradiate a specimen with each of the electron beam and the ion beam, and image observing means for detecting secondary charged particles emitted from the specimen and for observing an image of a specimen surface formed by the secondary charged particles.
    Type: Grant
    Filed: March 26, 1987
    Date of Patent: April 26, 1988
    Assignee: Hitachi, Ltd.
    Inventors: Hifumi Tamura, Norio Saitou, Kaoru Umemura
  • Patent number: 4733134
    Abstract: A liquid metal ion source is disclosed, wherein it comprises an ion emitter tip, ion source material holder means holding ion source material for supplying liquid metal ion source material to said ion emitter tip, ion extracting means for extracting ions from said ion emitter tip, when a voltage is applied between the ion extracting means and the ion emitter tip, the pulsing means for pulsing the relative voltage applied between the ion extracting means and the ion emitter tip. A DC voltage corresponding to the threshold voltage V.sub.th for ion beam extraction is applied between the ion emitter tip and the extracting electrode, what permits to extract an ion beam having a high current density by superposing a pulsed voltage on the DC voltage.
    Type: Grant
    Filed: May 22, 1986
    Date of Patent: March 22, 1988
    Assignee: Hitachi, Ltd.
    Inventors: Hifumi Tamura, Tohru Ishitani, Kaoru Umemura, Yoshimi Kawanami
  • Patent number: 4697086
    Abstract: An apparatus for implanting an ion microbeam consists of an ion source; a beam-focusing system which accelerates ions emitted from the ion source, focuses the ions, separates the ions by mass, and deflects the ions; and a sample plate which minutely moves a sample. A Wien filter in which a uniform electric field intersects a uniform magnetic field at right angles is used to separate the ions by mass in the beam-focusing system. A linear optical axis is bent in the Wien filter so that the axis of the ion beam emitted from the ion source intersects the axis of an ion beam implanted into the sample.
    Type: Grant
    Filed: April 24, 1985
    Date of Patent: September 29, 1987
    Assignee: Hitachi, Ltd.
    Inventors: Tohru Ishitani, Hifumi Tamura, Kaoru Umemura
  • Patent number: 4631448
    Abstract: An ion source is disclosed in which a crucible for holding an ion source material is provided with an aperture in its bottom wall, an emitter chip is disposed within the crucible in a coaxial manner so that the edge of the emitter chip passes through the aperture, a semi-closed crucible made of a conductive material and having the form of a circular cone is disposed in the vicinity of the tip of the emitter chip so as to be coaxial with the emitter chip and to have the same electric potential as the emitter chip, a filament for emitting an electron beam is disposed in the vicinity of the emitter chip, an ion extracting electrode is disposed at a place which is a little spaced apart from the tip of the emitter chip, and a lid is inserted into the ion source material holding part so as to be placed on the above-mentioned semi-closed crucible, thereby preventing the ion source material from being scattered by evaporation.
    Type: Grant
    Filed: February 8, 1984
    Date of Patent: December 23, 1986
    Assignee: Hitachi, Ltd.
    Inventors: Hifumi Tamura, Clay Shepherd, Toru Ishitani, Kaoru Umemura
  • Patent number: 4624833
    Abstract: A liquid metal ion source for emitting P ions, wherein a Cu alloy which contains at most 25 at. % of P and if necessary, further contains Ag, C or Si, and/or B is melted and fed to an emitter tip so as to generate an ion beam under a high electric field.
    Type: Grant
    Filed: November 26, 1984
    Date of Patent: November 25, 1986
    Assignee: Hitachi, Ltd.
    Inventors: Kaoru Umemura, Tohru Ishitani, Toshiyuki Aida, Hifumi Tamura