Abstract: Devices include a substrate, a collector layer, and an emitter layer positively biased relative to the collector. Devices further include a semiconductor layer located between the collector and the emitter. The semiconductor layer includes an organic semiconductor polymer with a donor-acceptor structure.

Abstract: Devices include a substrate, a collector layer, and an emitter layer positively biased relative to the collector. Devices further include a semiconductor layer located between the collector and the emitter. The semiconductor layer includes an organic semiconductor polymer with a donor-acceptor structure.

Abstract: Devices include a substrate, a collector layer, and an emitter layer positively biased relative to the collector. Devices further include a semiconductor layer located between the collector and the emitter. The semiconductor layer includes an organic semiconductor polymer with a donor-acceptor structure.

Abstract: Described herein are electronics that incorporate heterocyclic organic compounds. More specifically, described herein are organic electronics systems that are combined with donor-acceptor organic semiconductors, along with methods for making such devices, and uses thereof.

Abstract: The THz waveguides disclosed herein are used to transmit signals having a THz frequency in the range from 0.1 THz to 10 THz and include an alumina core surrounded by an optional cladding. The core may have a diameter (D1) in the range from 10 ?m to 500 ?m and may be comprised of a ceramic ribbon having a dielectric constant (Dk). The optional cladding may have a dielectric constant (Dk) less than the core. The THz waveguides can be formed using a continuous firing process and nano-perforation technology that enables access to a wide form factor range. In one example, rectangular waveguides, or ribbons, may be fabricated in the 10 ?m to 200 ?m thick range at widths in the range from sub-millimeters to several meters and lengths in the range from millimeters to several hundred meters.

Abstract: A thin-film transistor (TFT), includes: a substrate (202); an organic semiconductor (OSC) layer (210) positioned on the substrate; a dielectric layer (214) positioned on the OSC layer; and a polymeric interlayer (212) disposed in-between the OSC layer and the dielectric layer, such that the dielectric layer is configured to exhibit a double layer capacitance effect. A method of forming a thin-film transistor, includes: providing a substrate; providing a bottom gate layer atop the substrate; disposing consecutively from the substrate, an organic semiconductor (OSC) layer, a dielectric layer, and a top gate layer; and patterning the OSC layer, the dielectric layer, and the top gate layer using a single mask.

Abstract: The THz waveguides disclosed herein are used to transmit signals having a THz frequency in the range from 0.1 THz to 10 THz and include an alumina core surrounded by an optional cladding. The core may have a diameter (D1) in the range from 10 ?m to 500 ?m and may be comprised of a ceramic ribbon having a dielectric constant (Dk). The optional cladding may have a dielectric constant (Dk) less than the core. The THz waveguides can be formed using a continuous firing process and nano-perforation technology that enables access to a wide form factor range. In one example, rectangular waveguides, or ribbons, may be fabricated in the 10 ?m to 200 ?m thick range at widths in the range from sub-millimeters to several meters and lengths in the range from millimeters to several hundred meters.

Abstract: A method of fabricating microstructures of polar elastomers includes coating a substrate with a dielectric material including a polar elastomer, coating the dielectric material with a photoresist, exposing the photoresist to ultraviolet (UV) light through a photomask to define a pattern on the photoresist, developing the photoresist to form the pattern on the photoresist, etching the dielectric material to transfer the pattern from the photoresist to the dielectric material, and removing the photoresist from the patterned dielectric material.

Abstract: Disclosed is a polymer blend comprising an organic semiconductor (OSC) polymer blended with an isolating polymer and method for making the same. The OSC polymer includes a diketopyrrolopyrrole fused thiophene polymeric material, and the fused thiophene is beta-substituted. The isolating polymer includes a non-conjugated backbone, and the isolating polymer may be one of polyacrylonitrile, alkyl substituted polyacrylonitrile, polystyrene, polysulfonate, polycarbonate, an elastomer block copolymer, derivatives thereof, copolymers thereof and mixtures thereof. The method includes blending the OSC polymer with an isolating polymer in an organic solvent to create a polymer blend and depositing a thin film of the polymer blend over a substrate. Also disclosed is an organic semiconductor device that includes a thin semiconducting film comprising OSC polymer.

Abstract: The present disclosure describes a method of crosslinking fluoroelastomers, or more precisely thermally-crosslinkable fluorine-containing polymers, and to devices such as OTFTs (organic thin film transistors) incorporating such polymers. In some embodiments, a method comprises mixing: a solvent, a thermally crosslinkable fluorine-containing polymer, and one or more organic bases to form a mixed solution. The mixed solution is deposited over a substrate to form a first layer. The first layer is then crosslinked by thermal treatment to form a crosslinked first layer. The polymer is selected from: homopolymers of vinylidene fluoride; and copolymers of vinylidene fluoride with fluorine-containing ethylenic monomers. The one or more organic bases each have a pKa of 10 to 14.

Abstract: A method of fabricating microstructures of polar elastomers includes coating a substrate with a dielectric material including a polar elastomer, coating the dielectric material with a photoresist, exposing the photoresist to ultraviolet (UV) light through a photomask to define a pattern on the photoresist, developing the photoresist to form the pattern on the photoresist, etching the dielectric material to transfer the pattern from the photoresist to the dielectric material, and removing the photoresist from the patterned dielectric material

Abstract: A method for forming a glass stack, comprising: obtaining a glass sheet; selecting a plurality of portions of the glass sheet having a matching glass characteristic, wherein the glass characteristic is at least one of warp, bow, total thickness variation (TTV), and wedge; cutting a plurality of glass wafers from the selected portions of the glass sheet, and stacking the plurality of glass wafers to form a glass stack.

Abstract: The THz waveguides disclosed herein are used to transmit signals having a THz frequency in the range from 0.1 THz to 10 THz and include an alumina core surrounded by an optional cladding. The core may have a diameter (D1) in the range from 10 ?m to 500 ?m and may be comprised of a ceramic ribbon having a dielectric constant (Dk). The optional cladding may have a dielectric constant (Dk) less than the core. The THz waveguides can be formed using a continuous firing process and nano-perforation technology that enables access to a wide form factor range. In one example, rectangular waveguides, or ribbons, may be fabricated in the 10 ?m to 200 ?m thick range at widths in the range from sub-millimeters to several meters and lengths in the range from millimeters to several hundred meters.

Abstract: A camera module includes an image sensor, a lens assembly, and a mechanical actuator. The lens assembly is positioned to focus an image on the image sensor and includes a variable focus lens. The mechanical actuator causes relative translation between the lens assembly and the image sensor in each of an X-direction parallel to a first lateral axis and a Y-direction parallel to a second lateral axis. The first lateral axis is substantially perpendicular to an optical axis of the lens assembly, and the second lateral axis substantially perpendicular to each of the optical axis and the first lateral axis. The lens assembly is fixed relative to the image sensor in each of a first rotational direction about the first lateral axis and a second rotational direction about the second lateral axis.

Abstract: Described herein are electronics that incorporate heterocyclic organic compounds. More specifically, described herein are organic electronics systems that are combined with donor-acceptor organic semiconductors, along with methods for making such devices, and uses thereof.

Abstract: Described herein are ultrasensitive gas sensors based on a vertical-channel organic semiconductor (OSC) diode, along with methods for making such devices, and uses thereof. The organic sensing layer comprises a fused thiophene-based organic polymer that connects top and bottom electrodes to deliver a vertical current flow. The nano-porous top-electrode structure enables the contact between ambient gas molecules and the vertical organic channel. The device has high sensitivity, is easy to process, and has a long shelf life.

Abstract: Disclosed is a polymer blend comprising an organic semiconductor (OSC) polymer blended with an isolating polymer and method for making the same. The OSC polymer includes a diketopyrrolopyrrole fused thiophene polymeric material, and the fused thiophene is beta-substituted. The isolating polymer includes a non-conjugated backbone, and the isolating polymer may be one of polyacrylonitrile, alkyl substituted polyacrylonitrile, polystyrene, polysulfonate, polycarbonate, an elastomer block copolymer, derivatives thereof, copolymers thereof and mixtures thereof. The method includes blending the OSC polymer with an isolating polymer in an organic solvent to create a polymer blend and depositing a thin film of the polymer blend over a substrate. Also disclosed is an organic semiconductor device that includes a thin semiconducting film comprising OSC polymer.

Abstract: A glass article, having SiO2 from about 61 wt. % to about 62 wt. %; Al2O3 from about 18 wt. % to about 18.4 wt. %; B2O3 from about 7.1 wt. % to about 8.3 wt. %; MgO from about 1.9 wt. % to about 2.2 wt. %; CaO from about 6.5 wt. % to about 6.9 wt. %; SrO from about 2.5 wt. % to about 3.6 wt. %; BaO from about 0.6 wt. % to about 1.0 wt. %; and SnO2 from about 0.1 wt. % to about 0.2 wt. %, a refractive index of about 1.515 to about 1.517 at an optical wavelength of about 589 nm; a VD of about 57 to about 67; less than or equal to about 5 ?m total thickness variation over a component diameter of about 200 mm, less than or equal to about 20 ?m warp over a component diameter of about 200 mm, and wedge less than or equal to about 0.1 arcmin.

Abstract: A polar elastomer dielectric layer is formed on a substrate by dynamically dispensing a solution containing the polar elastomer on the substrate and curing it at an elevated temperature. The polar elastomer can include poly(vinylidene fluoride-co-hexa-fluoropropylene) (e-PVDF-HFP). They dynamic dispensing process can include spinning the substrate at a first speed, depositing the polar elastomer solution on the substrate, and spinning the substrate at a second speed.

Abstract: A camera module includes an image sensor, a lens assembly, and a mechanical actuator. The lens assembly is positioned to focus an image on the image sensor and includes a variable focus lens. The mechanical actuator causes relative translation between the lens assembly and the image sensor in each of an X-direction parallel to a first lateral axis and a Y-direction parallel to a second lateral axis. The first lateral axis is substantially perpendicular to an optical axis of the lens assembly, and the second lateral axis substantially perpendicular to each of the optical axis and the first lateral axis. The lens assembly is fixed relative to the image sensor in each of a first rotational direction about the first lateral axis and a second rotational direction about the second lateral axis.