Patents by Inventor Karin Takagi

Karin Takagi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200098790
    Abstract: A memory device includes first electrode layers stacked in a first direction, a first semiconductor layer piercing the first electrode layers in a first direction, a first insulating film surrounding the first semiconductor layer, and a semiconductor base connected to the first semiconductor layer. The first insulating film includes a first film, a second film, and a third film provided in order in a second direction from the first semiconductor layer toward one of first electrode layers. Spacing in the first direction between the second film and the semiconductor base is wider than a film thickness of the third film in the second direction. A minimum width of an outer perimeter of the first semiconductor layer is substantially the same as a width of an outer perimeter at a portion of the first semiconductor layer piercing the most proximal first electrode layer.
    Type: Application
    Filed: November 26, 2019
    Publication date: March 26, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Reiko KOMIYA, Tatsuo IZUMI, Takaya YAMANAKA, Takeshi NAGATOMO, Karin TAKAGI
  • Patent number: 10529735
    Abstract: A memory device includes first electrode layers stacked in a first direction, a first semiconductor layer piercing the first electrode layers in a first direction, a first insulating film surrounding the first semiconductor layer, and a semiconductor base connected to the first semiconductor layer. The first insulating film includes a first film, a second film, and a third film provided in order in a second direction from the first semiconductor layer toward one of first electrode layers. Spacing in the first direction between the second film and the semiconductor base is wider than a film thickness of the third film in the second direction. A minimum width of an outer perimeter of the first semiconductor layer is substantially the same as a width of an outer perimeter at a portion of the first semiconductor layer piercing the most proximal first electrode layer.
    Type: Grant
    Filed: September 11, 2018
    Date of Patent: January 7, 2020
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Reiko Komiya, Tatsuo Izumi, Takaya Yamanaka, Takeshi Nagatomo, Karin Takagi
  • Publication number: 20190287997
    Abstract: A memory device includes first electrode layers stacked in a first direction, a first semiconductor layer piercing the first electrode layers in a first direction, a first insulating film surrounding the first semiconductor layer, and a semiconductor base connected to the first semiconductor layer. The first insulating film includes a first film, a second film, and a third film provided in order in a second direction from the first semiconductor layer toward one of first electrode layers. Spacing in the first direction between the second film and the semiconductor base is wider than a film thickness of the third film in the second direction. A minimum width of an outer perimeter of the first semiconductor layer is substantially the same as a width of an outer perimeter at a portion of the first semiconductor layer piercing the most proximal first electrode layer.
    Type: Application
    Filed: September 11, 2018
    Publication date: September 19, 2019
    Applicant: Toshiba Memory Corporation
    Inventors: Reiko Komiya, Tatsuo Izumi, Takaya Yamanaka, Takeshi Nagatomo, Karin Takagi