Patents by Inventor Karl Boggs

Karl Boggs has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Passivative chemical mechanical polishing composition for copper film planarization
    Publication number: 20050255693
    Abstract: A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent and a method of use. Such CMP composition may be diluted during the CMP polish to minimize the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions in the CMP composition and at the copper/CMP composition interface during CMP processing.
    Type: Application
    Filed: April 28, 2005
    Publication date: November 17, 2005
    Inventors: Jun Liu, Mackenzie King, Michael Darsillo, Karl Boggs, Jeffrey Roeder, Thomas Baum
  • Chemical mechanical polishing compositions for copper and associated materials and method of using same
    Publication number: 20040229461
    Abstract: A CMP composition containing a rheology agent, e.g., in combination with oxidizing agent, chelating agent, inhibiting agent, abrasive and solvent. Such CMP composition advantageously increases the materials selectivity in the CMP process and is useful for polishing surfaces of copper elements on semiconductor substrates, without the occurrence of dishing or other adverse planarization deficiencies in the polished copper.
    Type: Application
    Filed: May 12, 2003
    Publication date: November 18, 2004
    Inventors: Michael Darsillo, Peter Wrschka, Karl Boggs
  • Passivative chemical mechanical polishing composition for copper film planarization
    Publication number: 20040108302
    Abstract: A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent. Such CMP composition advantageously is devoid of BTA, and is useful for polishing surfaces of copper elements on semiconductor substrates, without the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions, e.g., Cu2+, in the bulk CMP composition at the copper/CMP composition interface during CMP processing.
    Type: Application
    Filed: December 10, 2002
    Publication date: June 10, 2004
    Inventors: Jun Liu, Peter Wrschka, David Bernhard, MacKenzie King, Michael Darsillo, Karl Boggs