Abstract: A method for measuring a physical variable in which a structure is put in resonant oscillations and a change in the oscillation frequency of the structure as a result of a change in the physical variable to be measured is detected, and a frequency-analog signal is provided. A structure oscillating with a resonance frequency receives an electrostatic force.

Abstract: A filter for electric signals has a substrate, a vibrating body capable of vibrating with at least two antipodes deflected in phase opposition relative to the substrate and has electrodes connected to a signal input and a signal output for electric excitation and for detection of the vibration of the vibrating body. The electrodes for detecting the vibration, each assigned to antipodes deflected in phase opposition, are connected to two separate terminals of the signal output.

Abstract: A micromechanical gradient sensor having a substrate, a ring body which is mounted elastically above the substrate with the assistance of a first spring device, a driving device which is connected to the ring body for driving the ring body to rotary motions about the ring axis, and an acceleration sensing device which is secured to the ring body via a second spring device. The acceleration sensing device is designed in such a manner that, as a result of the centrifugal force acting due to the rotary motions, and as a result of the force acting against the spring tension of the two spring devices due to the gravitational acceleration, the acceleration sensing device is able to travel out along the sensor axis connecting it, and running through the ring axis. Also included is an evaluation unit for determining the excursion of the acceleration sensing device and for determining the angle of inclination of sensor axis relative to the perpendicular component.

Abstract: An acceleration sensor, particularly a Coriolis rotation-rate sensor, having a swinging structure that is movably suspended on a substrate (base) and can be deflected due to an acceleration effect, the sensor further having an arrangement for generating a planar swinging movement of the swinging structure, particularly a rotational swinging movement, and an evaluating arrangement for detecting a deflection of the swinging structure that is stipulated by acceleration, particularly for detecting a Coriolis acceleration. The swinging structure (12) is rotatably suspended so as to perform a planar swinging movement, and should perform a planar, rotational swinging movement.

Abstract: In a sensor and a method for manufacturing a sensor, a movable element is patterned out of a silicon layer and is secured to a substrate. The conducting layer is subdivided into various regions, which are electrically insulated from one another. The electrical connection between the various regions of the silicon layer is established by a conducting layer, which is arranged between a first and a second insulating layer.

Abstract: A force sensor, especially an acceleration sensor or a pressure sensor, has a structure that vibrates in resonance, and its oscillation frequency is variable due to an acting force which is to be detected. The distance of an operating point of the force sensor from the point of its mechanical instability can be adjusted by applying an electric voltage.

Abstract: An acceleration sensing device includes a rotational speed sensor which is mounted on a substrate and detects rotational speed, at least one oscillating structure with a deflectable seismic mass, and an acceleration sensor that detects linear acceleration and has at least one additional seismic mass which is suspended on flexible elements so that it can be deflected. The seismic masses of the two sensors are deflected independently of one another.

Abstract: In a sensor and a method for manufacturing a sensor, a movable element is patterned out of a silicon layer and is secured to a substrate. The conducting layer is subdivided into various regions, which are electrically insulated from one another. The electrical connection between the various regions of the silicon layer is established by a conducting layer, which is arranged between a first and a second insulating layer.