Abstract: Fabricating a semiconductor substrate by (a) vertical etching a feature having sidewalls and a depth into one or more layers formed on the semiconductor substrate and (b) depositing an amorphous carbon liner onto the sidewalls of the feature. Steps (a) and optionally (b) are iterated until the vertical etch feature has reached a desired depth. With each iteration of (a), the feature is vertical etched deeper into the one or more layers, while the amorphous carbon liner resists lateral etching of the sidewalls of the feature. With each optional iteration of (b), the deposited amorphous carbon liner on the sidewalls of the feature is replenished.

Abstract: A method of improving usability and transparency of machine-learning aspects of applications providing various types of services is disclosed. Based on a request submitted through an administrative user interface, a data readiness check is performed on underlying data associated with the application. Based on a successful completion of the data readiness check, a configuration file is retrieved from an application server. The configuration file specifies a plurality of keys for generating a machine-learned model for the application. The machine-learned model is trained based on the plurality of keys specified in the configuration file. The machine-learned model is selected from a plurality of machine-learned models based on dry runs of the each of the plurality of models. The machine-learned model is activated with respect to the application. Scores are identified from the underlying data items based on the selected machine-learned model.

Abstract: A temperature sensor system for an integrated circuit includes at least one sensor configured to generate a sensor signal indicative of a temperature in a respective location of the integrated circuit and a sensing module configured to receive the sensor signal, determine a temperature of the at least one sensor based on the sensor signal, an electrical characteristic of the at least one sensor, and a relationship between the electrical characteristic and the temperature of the at least one sensor, the relationship corresponding to variations in the electrical characteristic at a known calibration temperature, and generate a temperature signal based on the determined temperature.

Abstract: The present invention relates to data communication and electrical circuits. More specifically, embodiments of the present invention provide a clock and data recovery (CDR) architecture implementation for high data rate wireline communication links. In an embodiment, a CDR device includes a phase detector, a loop filter, and a fractional-N PLL. The fractional-N PLL generates output clock signal based on output of the loop filter. There are other embodiments as well.

Abstract: Various embodiments herein relate to methods, apparatus, and systems for etching a feature in a substrate. Typically the feature is etched in a dielectric-containing stack. The etching process involves cyclically etching the feature and depositing a protective film on sidewalls of the partially etched feature. These stages are repeated until the feature reaches its final depth. The protective film may have a particular composition, for example including at least one of a tungsten carbonitride, a tungsten sulfide, tin, a tin-containing compound, molybdenum, a molybdenum-containing compound, a ruthenium carbonitride, a ruthenium sulfide, an aluminum carbonitride, an aluminum sulfide, zirconium, and a zirconium-containing compound. A number of optional steps may be taken including, for example, doping the mask layer, pre-treating the substrate prior to deposition, removing the protective film from the sidewalls, and oxidizing any remaining protective film.

Abstract: A temperature sensor system for an integrated circuit includes at least one sensor configured to generate a sensor signal indicative of a temperature in a respective location of the integrated circuit and a sensing module configured to receive the sensor signal, determine a temperature of the at least one sensor based on the sensor signal, an electrical characteristic of the at least one sensor, and a relationship between the electrical characteristic and the temperature of the at least one sensor, the relationship corresponding to variations in the electrical characteristic at a known calibration temperature, and generate a temperature signal based on the determined temperature.

Abstract: Fabricating a semiconductor substrate by (a) vertical etching a feature having sidewalls and a depth into one or more layers formed on the semiconductor substrate and (b) depositing an amorphous carbon liner onto the sidewalls of the feature. Steps (a) and optionally (b) are iterated until the vertical etch feature has reached a desired depth. With each iteration of (a), the feature is vertical etched deeper into the one or more layers, while the amorphous carbon liner resists lateral etching of the sidewalls of the feature. With each optional iteration of (b), the deposited amorphous carbon liner on the sidewalls of the feature is replenished.

Abstract: The present invention relates to data communication and electrical circuits. More specifically, embodiments of the present invention provide a clock and data recovery (CDR) architecture implementation for high data rate wireline communication links. In an embodiment, a CDR device includes a phase detector, a loop filter, and a fractional-N PLL. The fractional-N PLL generates output clock signal based on output of the loop filter. There are other embodiments as well.

Abstract: The present invention relates to integrated circuits. More specifically, embodiments of the present invention provide methods and systems for determining temperatures of an integrated circuit using an one-point calibration technique, where temperature is determined by a single temperature measurement and calculation using known electrical characteristics of the integrated circuit.

Abstract: Various embodiments herein relate to methods, apparatus, and systems for etching a feature in a substrate. Typically the feature is etched in a dielectric-containing stack. The etching process involves cyclically etching the feature and depositing a protective film on sidewalls of the partially etched feature. These stages are repeated until the feature reaches its final depth. The protective film may have a particular composition, for example including at least one of a tungsten carbonitride, a tungsten sulfide, tin, a tin-containing compound, molybdenum, a molybdenum-containing compound, a ruthenium carbonitride, a ruthenium sulfide, an aluminum carbonitride, an aluminum sulfide, zirconium, and a zirconium-containing compound. A number of optional steps may be taken including, for example, doping the mask layer, pre-treating the substrate prior to deposition, removing the protective film from the sidewalls, and oxidizing any remaining protective film.

Abstract: Methods and apparatuses for etching metal-doped carbon-containing materials are provided herein. Etching methods include using a mixture of an etching gas suitable for etching the carbon component of the metal-doped carbon-containing material and an additive gas suitable for etching the metal component of the metal-doped carbon-containing material and igniting a plasma to selectively remove metal-doped carbon-containing materials relative to underlayers such as silicon oxide, silicon nitride, and silicon, at high temperatures. Apparatuses suitable for etching metal-doped carbon-containing materials are equipped with a high temperature movable pedestal, a plasma source, and a showerhead between a plasma generating region and the substrate.

Abstract: According to examples, an apparatus may include a machine readable medium on which is stored machine readable instructions that may cause a processor to, for each of a plurality of resource setting levels, determine resource usage characteristics and execution times of executed workloads, assign, based on the resource usage characteristics of the executed workloads, each of the executed workloads into one of a plurality of resource bins, determine, for each of the resource bins, an average execution time of the executed workloads in the resource bin, determine a total average execution time of the executed workloads from the determined average execution times, identify a lowest total average execution time of the determined total average execution times, determine the resource setting level corresponding to the identified lowest total average execution time, and tune a resource setting to the determined resource setting level.

Abstract: Various embodiments of systems and methods for integrated services for form generation and maintenance on cloud are described herein. The method includes receiving a request for a form-related service from a client. The form-related service may comprise at least one of generating a form, printing the form, extracting one or more form templates, extracting one or more form schemas, and uploading one or more tenant-created form templates onto a cloud template store. The received request is authenticated. Upon a successful authentication, one or more actions may be performed to render an output based upon the request. The output may include one of a form, the one or more form templates, the one or more form schemas, and a notification for successful or unsuccessful uploading of the one or more tenant-created form templates onto the cloud template store. Upon unsuccessful authentication, an error message may be displayed.

Abstract: A method of improving usability and transparency of machine-learning aspects of applications providing various types of services is disclosed. Based on a request submitted through an administrative user interface, a data readiness check is performed on underlying data associated with the application. Based on a successful completion of the data readiness check, a configuration file is retrieved from an application server. The configuration file specifies a plurality of keys for generating a machine-learned model for the application. The machine-learned model is trained based on the plurality of keys specified in the configuration file. The machine-learned model is selected from a plurality of machine-learned models based on dry runs of the each of the plurality of models. The machine-learned model is activated with respect to the application. Scores are identified from the underlying data items based on the selected machine-learned model.

Abstract: The present invention relates to integrated circuits. More specifically, embodiments of the present invention provide methods and systems for determining temperatures of an integrated circuit using an one-point calibration technique, where temperature is determined by a single temperature measurement and calculation using known electrical characteristics of the integrated circuit.

Abstract: According to examples, an apparatus may include a machine readable medium on which is stored machine readable instructions that may cause a processor to, for each of a plurality of resource setting levels, determine resource usage characteristics and execution times of executed workloads, assign, based on the resource usage characteristics of the executed workloads, each of the executed workloads into one of a plurality of resource bins, determine, for each of the resource bins, an average execution time of the executed workloads in the resource bin, determine a total average execution time of the executed workloads from the determined average execution times, identify a lowest total average execution time of the determined total average execution times, determine the resource setting level corresponding to the identified lowest total average execution time, and tune a resource setting to the determined resource setting level.

Abstract: The present invention relates to integrated circuits. More specifically, embodiments of the present invention provide methods and systems for determining temperatures of an integrated circuit using an one-point calibration technique, where temperature is determined by a single temperature measurement and calculation using known electrical characteristics of the integrated circuit.

Abstract: Disclosed is a method to form arbitrarily shaped, uniform, lightweight, thermally insulating and acoustically absorptive automotive components with controllable density, thickness, porosity, and surface integrity. The method is based on natural cellulosic fibers such as those found in cardboard and paper and uses a thermoplastic fiber and particle slurry to form fusible components. The method produces components having the benefit of commercially available thermoformed fiber mats or open-cell extruded foam components with excellent acoustical properties, enhanced thermal insulation, and are light weight, which limits engine inefficiency, and the high cost of such parts so as to allow large scale implementation.

Abstract: Disclosed is a method to form arbitrarily shaped, uniform, lightweight, thermally insulating and acoustically absorptive automotive components with controllable density, thickness, porosity, and surface integrity. The method is based on natural cellulosic fibers such as those found in cardboard and paper and uses a thermoplastic fiber and particle slurry to form fusible components. The method produces components having the benefit of commercially available thermoformed fiber mats or open-cell extruded foam components with excellent acoustical properties, enhanced thermal insulation, and are light weight, which limits engine inefficiency, and the high cost of such products so as to allow large scale implementation.

Abstract: Methods and apparatuses for etching metal-doped carbon-containing materials are provided herein. Etching methods include using a mixture of an etching gas suitable for etching the carbon component of the metal-doped carbon-containing material and an additive gas suitable for etching the metal component of the metal-doped carbon-containing material and igniting a plasma to selectively remove metal-doped carbon-containing materials relative to underlayers such as silicon oxide, silicon nitride, and silicon, at high temperatures. Apparatuses suitable for etching metal-doped carbon-containing materials are equipped with a high temperature movable pedestal, a plasma source, and a showerhead between a plasma generating region and the substrate.