Patents by Inventor Kartik Ramaswamy

Kartik Ramaswamy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods and apparatus for controlling characteristics of a plasma
    Patent number: 7777599
    Abstract: Methods and apparatus for controlling characteristics of a plasma, such as the spatial distribution of RF power and plasma uniformity, are provided herein. In some embodiments, an apparatus for controlling characteristics of a plasma includes a resonator for use in conjunction with a plasma reactor, the resonator including a source resonator for receiving an RF signal having a first frequency; a return path resonator disposed substantially coaxially with, and at least partially within, the source resonator; and an outer conductor having the source resonator and the return path resonator disposed substantially coaxially with, and at least partially within, the outer conductor, the outer conductor for providing an RF ground connection.
    Type: Grant
    Filed: November 2, 2007
    Date of Patent: August 17, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Steven C. Shannon, Daniel J. Hoffman, Matthew L. Miller, Olga Regelman, Kenneth S. Collins, Kartik Ramaswamy, Kallol Bera
  • Plasma immersion ion implantation reactor having an ion shower grid
    Patent number: 7767561
    Abstract: A plasma immersion ion implantation process for implanting a selected species at a desired ion implantation depth profile in a workpiece is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural elongate orifices oriented in a non-parallel direction relative to a surface plane of the ion shower grid.
    Type: Grant
    Filed: July 20, 2004
    Date of Patent: August 3, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Hiroji Hanawa, Tsutomu Tanaka, Kenneth S. Collins, Amir Al-Bayati, Kartik Ramaswamy, Andrew Nguyen
  • Substrate support having heat transfer system
    Patent number: 7768765
    Abstract: A support for a substrate processing chamber comprises a fluid circulating reservoir comprising a channel having serpentine convolutions. A fluid inlet supplies a heat transfer fluid to the fluid circulating reservoir and a fluid outlet discharges the heat transfer fluid. In one version, the channel is doubled over to turn back upon itself.
    Type: Grant
    Filed: March 8, 2007
    Date of Patent: August 3, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Andrew Nguyen, Wing Lau Cheng, Hiroji Hanawa, Semyon L. Kats, Kartik Ramaswamy, Yan Ye, Kwok Manus Wong, Daniel J. Hoffman, Tetsuya Ishikawa, Brian C. Lue
  • APPARATUS FOR CHARACTERIZING A MAGNETIC FIELD IN A MAGNETICALLY ENHANCED SUBSTRATE PROCESSING SYSTEM
    Publication number: 20100188077
    Abstract: Embodiments of sensor devices for characterizing magnetic fields formed in substrate processing systems and methods of use thereof are provided herein. In some embodiments, an apparatus for characterizing a magnetic field in a substrate processing system may include a carrier having a form substantially similar to a substrate to be processed in the substrate processing system. One or more magnetic sensors are disposed on the carrier for measuring a magnitude of a magnetic field formed in the processing system in an x-, y-, and z-direction. A microprocessor is coupled to the one or more magnetic sensors to sample data representative of the magnitude of the magnetic field in the x-, y-, and z-directions proximate a position of each sensor. A memory device is coupled to the microprocessor for storing the sampled data. A power source is provided to supply power to each magnetic sensor and the microprocessor.
    Type: Application
    Filed: January 27, 2009
    Publication date: July 29, 2010
    Applicant: APPLIED MATERIALS, INC.
    Inventors: KARTIK RAMASWAMY, HIROJI HANAWA, LAWRENCE WONG, CHINH DINH
  • Plasma immersed ion implantation process
    Patent number: 7732309
    Abstract: Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, the method for implanting ions into a substrate by a plasma immersion ion implantation process includes providing a substrate into a processing chamber, supplying a gas mixture including a reacting gas and a reducing gas into the chamber, and implanting ions from the gas mixture into the substrate. In another embodiment, the method includes providing a substrate into a processing chamber, supplying a gas mixture including reacting gas and a hydrogen containing reducing gas into the chamber, and implanting ions from the gas mixture into the substrate.
    Type: Grant
    Filed: December 8, 2006
    Date of Patent: June 8, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Shijian Li, Kartik Ramaswamy, Biagio Gallo, Dong Hyung Lee, Majeed A. Foad
  • EFFICIENT AND ACCURATE METHOD FOR REAL-TIME PREDICTION OF THE SELF-BIAS VOLTAGE OF A WAFER AND FEEDBACK CONTROL OF ESC VOLTAGE IN PLASMA PROCESSING CHAMBER
    Publication number: 20100136793
    Abstract: In a plasma reactor having an electrostatic chuck, wafer voltage may be determined from RF measurements at the bias input using previously determined constants based upon transmission line properties of the bias input, and this wafer voltage may be used to accurately control the DC wafer clamping voltage.
    Type: Application
    Filed: November 20, 2009
    Publication date: June 3, 2010
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Zhigang Chen, Shahid Rauf, Walter R. Merry, Leonid Dorf, Kartik Ramaswamy, Kenneth S. Collins
  • Plasma immersion ion implantation process using a plasma source having low dissociation and low minimum plasma voltage
    Patent number: 7700465
    Abstract: A method for ion implanting a species into a surface layer of a workpiece in a chamber includes placing the workpiece in a processing zone of the chamber bounded by a chamber side wall and a chamber ceiling facing said workpiece and between a pair of ports of the chamber near generally opposite sides to the processing zone and connected together by a conduit external of the chamber. The method further includes introducing into the chamber a process gas comprising the species to be implanted, and further generating from the process gas a plasma current and causing the plasma current to oscillate in a circulatory reentrant path comprising the conduit and the processing zone.
    Type: Grant
    Filed: August 22, 2003
    Date of Patent: April 20, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Kenneth S. Collins, Hiroji Hanawa, Kartik Ramaswamy, Andrew Nguyen, Amir Al-Bayati, Biagio Gallo, Gonzalo Antonio Monroy
  • Chemical vapor deposition plasma reactor having plural ion shower grids
    Patent number: 7695590
    Abstract: A plasma reactor for processing a semiconductor workpiece includes a reactor chamber and a set of plural parallel ion shower grids that divide the chamber into an upper ion generation region and a lower reactor region, each of the ion shower grids having plural orifices in mutual registration from grid to grid, each orifice being oriented in a non-parallel direction relative to a surface plane of the respective ion shower grid. A workpiece support in the process region faces the lowermost one of the ion shower grids. A reactive species source furnishes into the ion generation region a chemical vapor deposition precursor species. The reactor further includes a vacuum pump coupled to the reactor region, a plasma source power applicator for generating a plasma in the ion generation region and a grid potential source coupled to the set of ion shower grids.
    Type: Grant
    Filed: June 22, 2004
    Date of Patent: April 13, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Hiroji Hanawa, Tsutomu Tanaka, Kenneth S. Collins, Amir Al-Bayati, Kartik Ramaswamy, Andrew Nguyen
  • RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor
    Patent number: 7666464
    Abstract: A method of measuring ion dose in a plasma immersion ion implantation reactor during ion implantation of a selected species into a workpiece includes placing the workpiece on a pedestal in the reactor and feeding into the reactor a process gas comprising a species to be implanted into the workpiece, and then coupling RF plasma source power to a plasma in the reactor. It further includes coupling RF bias power to the workpiece by an RF bias power generator that is coupled to the workpiece through a bias feedpoint of the reactor and measuring RF current at the feedpoint to generate a current-related value, and then integrating the current-related over time to produce an ion implantation dose-related value.
    Type: Grant
    Filed: October 23, 2004
    Date of Patent: February 23, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Kenneth S. Collins, Hiroji Hanawa, Kartik Ramaswamy, Amir Al-Bayati, Andrew Nguyen, Biagio Gallo
  • FIELD ENHANCED INDUCTIVELY COUPLED PLASMA (FE-ICP) REACTOR
    Publication number: 20100025384
    Abstract: Embodiments of field enhanced inductively coupled plasma reactors and methods of use of same are provided herein. In some embodiments, a field enhanced inductively coupled plasma processing system may include a process chamber having a dielectric lid and a plasma source assembly disposed above the dielectric lid. The plasma source assembly includes one or more coils configured to inductively couple RF energy into the process chamber to form and maintain a plasma therein, one or more electrodes configured to capacitively couple RF energy into the process chamber to form the plasma therein, wherein the one or more electrodes are electrically coupled to one of the one or more coils, and an RF generator coupled to the one or more inductive coils and the one or more electrodes. In some embodiments, a heater element may be disposed between the dielectric lid and the plasma source assembly.
    Type: Application
    Filed: July 30, 2008
    Publication date: February 4, 2010
    Applicant: APPLIED MATERIALS, INC.
    Inventors: VALENTIN N. TODOROW, Samer Banna, Kartik Ramaswamy, Michael D. Willwerth
  • WORKPIECE SUPPORT FOR A PLASMA REACTOR WITH CONTROLLED APPORTIONMENT OF RF POWER TO A PROCESS KIT RING
    Publication number: 20100018648
    Abstract: In an electrostatic chuck, RF bias power is separately applied to a workpiece and to a process kit collar surrounding the workpiece. At least one variable impedance element governed by a system controller adjusts the apportionment of RF bias power between the workpiece and the process kit collar, allowing dynamic adjustment of the plasma sheath electric field at the extreme edge of the workpiece, for optimum electric field uniformity under varying plasma conditions, for example.
    Type: Application
    Filed: July 23, 2008
    Publication date: January 28, 2010
    Applicant: Applied Marterials, Inc.
    Inventors: KENNETH S. COLLINS, Douglas A. Buchberger, JR., Kartik Ramaswamy, Shahid Rauf, Hiroji Hanawa, Jennifer Y. Sun, Andrew Nguyen, Thorsten B. Lill, Meihua Shen
  • APPARATUS FOR MULTIPLE FREQUENCY POWER APPLICATION
    Publication number: 20100013572
    Abstract: Apparatus and methods are provided for a power matching apparatus for use with a processing chamber. In one aspect of the invention, a power matching apparatus is provided including a first RF power input coupled to a first adjustable capacitor, a second RF power input coupled to a second adjustable capacitor, a power junction coupled to the first adjustable capacitor and the second adjustable capacitor, a receiver circuit coupled to the power junction, a high voltage filter coupled to the power junction and the high voltage filter has a high voltage output, a voltage/current detector coupled to the power junction and a RF power output connected to the voltage/current detector.
    Type: Application
    Filed: July 21, 2009
    Publication date: January 21, 2010
    Applicant: APPLIED MATERIALS, INC.
    Inventors: STEVEN C. SHANNON, JANG GYOO YANG, MATTHEW L. MILLER, KARTIK RAMASWAMY, JAMES P. CRUSE
  • Semiconductor on insulator vertical transistor fabrication and doping process
    Patent number: 7642180
    Abstract: A process for conformally doping through the vertical and horizontal surfaces of a 3-dimensional vertical transistor in a semiconductor-on-insulator structure employs an RF oscillating torroidal plasma current to perform either conformal ion implantation, or conformal deposition of a dopant-containing film which can then be heated to drive the dopants into the transistor. Some embodiments employ both conformal ion implantation and conformal deposition of dopant containing films, and in those embodiments in which the dopant containing film is a pure dopant, the ion implantation and film deposition can be performed simultaneously.
    Type: Grant
    Filed: September 18, 2007
    Date of Patent: January 5, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Amir Al-Bayati, Kenneth S. Collins, Hiroji Hanawa, Kartik Ramaswamy, Biagio Gallo, Andrew Nguyen
  • RF POWER DELIVERY SYSTEM IN A SEMICONDUCTOR APPARATUS
    Publication number: 20090321019
    Abstract: Embodiments of the invention provide an apparatus which provide good RF uniformity within a processing chamber. In one embodiment, an apparatus includes a substrate support assembly, a terminal, and a dielectric insulator. The substrate support assembly has a center passage formed along a center axis. An RF transmission line is provided. The RF transmission line has a substantially vertical portion and a substantially horizontal portion, wherein the terminal is coupled to the substantially horizontal portion of the RF transmission line. The dielectric insulator circumscribes the substantially horizontal portion of the RF transmission line. The dielectric insulator has a first opening through which the terminal passes.
    Type: Application
    Filed: June 25, 2008
    Publication date: December 31, 2009
    Inventors: Zhigang Chen, Shahid Rauf, Kartik Ramaswamy
  • METHOD AND APPARATUS FOR REMOVING POLYMER FROM A SUBSTRATE
    Publication number: 20090302002
    Abstract: A method and an apparatus for removing polymer from a substrate are provided. In one embodiment, an apparatus utilized to remove polymer from a substrate includes a processing chamber having a chamber wall and a chamber lid defining a process volume, a substrate support assembly disposed in the processing chamber, and a remote plasma source coupled to the processing chamber through an outlet port formed within the chamber wall, the outlet port having an opening pointing toward an periphery region of a substrate disposed on the substrate support assembly, wherein the remote plasma source is fabricated from a material resistant to hydrogen species.
    Type: Application
    Filed: February 27, 2009
    Publication date: December 10, 2009
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Kenneth Collins, Martin Salinas, Walter Merry, Jie Yuan, Andrew Nguyen, Kartik Ramaswamy, Jennifer Sun, Ren-Guan Duan, Xiaoming He, Nancy Fung
  • METHOD OF PLASMA LOAD IMPEDANCE TUNING FOR ENGINEERED TRANSIENTS BY SYNCHRONIZED MODULATION OF AN UNMATCHED LOW POWER RF GENERATOR
    Publication number: 20090298287
    Abstract: A method is provided in plasma processing of a workpiece for stabilizing the plasma against engineered transients in applied RF power, by modulating an unmatched low power RF generator in synchronism with the transient.
    Type: Application
    Filed: May 29, 2008
    Publication date: December 3, 2009
    Applicant: Applied Materials, Inc.
    Inventors: Steven C. Shannon, Kartik Ramaswamy, Daniel J. Hoffman, Matthew L. Miller, Kenneth S. Collins
  • PLASMA REACTOR WITH HIGH SPEED PLASMA IMPEDANCE TUNING BY MODULATION OF SOURCE POWER OR BIAS POWER
    Publication number: 20090297404
    Abstract: A plasma reactor, having source and bias RF power generators of different frequencies, is provided with a controller responsive to fluctuations in plasma load impedance measured at one of the generators to modulate the output of the other generator to compensate for the fluctuations.
    Type: Application
    Filed: May 29, 2008
    Publication date: December 3, 2009
    Applicant: Applied Materials, Inc.
    Inventors: STEVEN C. SHANNON, Kartik Ramaswamy, Daniel J. Hoffman, Matthew L. Miller, Kenneth S. Collins
  • PLASMA REACTOR WITH PLASMA LOAD IMPEDANCE TUNING FOR ENGINEERED TRANSIENTS BY SYNCHRONIZED MODULATION OF AN UNMATCHED LOW POWER RF GENERATOR
    Publication number: 20090294061
    Abstract: A plasma reactor for processing a workpiece such as a semiconductor wafer using predetermined transients of plasma bias power or plasma source power has unmatched low power RF generators synchronized to the transients to minimize transient-induced changes in plasma characteristics.
    Type: Application
    Filed: May 29, 2008
    Publication date: December 3, 2009
    Applicant: Applied Materials, Inc.
    Inventors: Steven C. Shannon, Kartik Ramaswamy, Daniel J. Hoffman, Matthew L. Miller, Kenneth S. Collins
  • METHOD OF PLASMA LOAD IMPEDANCE TUNING BY MODULATION OF A SOURCE POWER OR BIAS POWER RF GENERATOR
    Publication number: 20090294275
    Abstract: A method of processing a workpiece in a plasma reactor chamber in which plasma RF source and bias power is delivered into the chamber, by sensing fluctuations in a plasma parameter such as load impedance or reflected power at one of the generators, and modulating the output of the other generator to minimize the fluctuation.
    Type: Application
    Filed: May 29, 2008
    Publication date: December 3, 2009
    Applicant: Applied Materials, Inc.
    Inventors: Steven C. Shannon, Kartik Ramaswamy, Daniel J. Hoffman, Matthew L. Miller, Kenneth S. Collins
  • PLASMA REACTOR WITH PLASMA LOAD IMPEDANCE TUNING FOR ENGINEERED TRANSIENTS BY SYNCHRONIZED MODULATION OF A SOURCE POWER OR BIAS POWER RF GENERATOR
    Publication number: 20090294062
    Abstract: In a plasma reactor employing source and bias RF power generators, plasma is stabilized against an engineered transient in the output of either the source or bias power generator by a compensating modulation in the other generator.
    Type: Application
    Filed: May 29, 2008
    Publication date: December 3, 2009
    Applicant: Applied Materials, Inc.
    Inventors: Steven C. Shannon, Kartik Ramaswamy, Daniel J. Hoffman, Matthew L. Miller, Kenneth S. Collins