Patents by Inventor Katherina Babich
Katherina Babich has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11094805Abstract: Structures for a heterojunction bipolar transistor and methods of forming a structure for a heterojunction bipolar transistor. A first portion of a first semiconductor layer defines an emitter, a first portion of a second semiconductor layer defines a collector, and a base includes respective second portions of the first and second semiconductor layers that are laterally positioned between the first portion of the first semiconductor layer and the first portion of the second semiconductor layer. The first portion of the first semiconductor layer has a first thickness, and the first portion of the second semiconductor layer has a second thickness that is greater than the first thickness. The first portion and the second portion of the first semiconductor layer adjoin at a first junction having the first thickness. The first portion and the second portion of the second semiconductor layer adjoin at a second junction having the second thickness.Type: GrantFiled: January 17, 2020Date of Patent: August 17, 2021Assignee: GLOBALFOUNDRIES U.S. INC.Inventors: Alexander Derrickson, Edmund K. Banghart, Alexander Martin, Ryan Sporer, Jagar Singh, Katherina Babich, George R. Mulfinger
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Publication number: 20210226044Abstract: Structures for a heterojunction bipolar transistor and methods of forming a structure for a heterojunction bipolar transistor. A first portion of a first semiconductor layer defines an emitter, a first portion of a second semiconductor layer defines a collector, and a base includes respective second portions of the first and second semiconductor layers that are laterally positioned between the first portion of the first semiconductor layer and the first portion of the second semiconductor layer. The first portion of the first semiconductor layer has a first thickness, and the first portion of the second semiconductor layer has a second thickness that is greater than the first thickness. The first portion and the second portion of the first semiconductor layer adjoin at a first junction having the first thickness. The first portion and the second portion of the second semiconductor layer adjoin at a second junction having the second thickness.Type: ApplicationFiled: January 17, 2020Publication date: July 22, 2021Inventors: Alexander Derrickson, Edmund K. Banghart, Alexander Martin, Ryan Sporer, Jagar Singh, Katherina Babich, George R. Mulfinger
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Patent number: 10580684Abstract: A method of forming an SDB that is self-aligned to a dummy gate and the resulting device are provided. Embodiments include providing a plurality of gates over a SOI layer above a BOX layer, each gate having a pair of sidewall spacers and a cap layer, and a raised S/D epitaxial regions over the SOI layer between each gate; removing a gate of the plurality of gates and a portion of the SOI layer exposed by the removing of the gate, and a portion of the BOX layer underneath the SOI layer, the removing forms a trench; forming a liner of a first dielectric material over and along sidewalls of the trench; and filling the trench with a second dielectric material.Type: GrantFiled: April 11, 2018Date of Patent: March 3, 2020Assignee: GLOBALFOUNDRIES INC.Inventors: Jin Wallner, Katherina Babich, Sunil Kumar Singh
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Publication number: 20190318955Abstract: A method of forming an SDB that is self-aligned to a dummy gate and the resulting device are provided. Embodiments include providing a plurality of gates over a SOI layer above a BOX layer, each gate having a pair of sidewall spacers and a cap layer, and a raised S/D epitaxial regions over the SOI layer between each gate; removing a gate of the plurality of gates and a portion of the SOI layer exposed by the removing of the gate, and a portion of the BOX layer underneath the SOI layer, the removing forms a trench; forming a liner of a first dielectric material over and along sidewalls of the trench; and filling the trench with a second dielectric material.Type: ApplicationFiled: April 11, 2018Publication date: October 17, 2019Inventors: Jin WALLNER, Katherina BABICH, Sunil Kumar SINGH
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Patent number: 9059000Abstract: Increased protection of areas of a chip are provided by both a mask structure of increased robustness in regard to semiconductor manufacturing processes or which can be removed with increased selectivity and controllability in regard to underlying materials, or both. Mask structures are provided which exhibit an interface of a chemical reaction, grain or material type which can be exploited to enhance either or both types of protection. Structures of such masks include TERA material which can be converted or hydrated and selectively etched using a mixture of hydrogen fluoride and a hygroscopic acid or organic solvent, and two layer structures of similar or dissimilar materials.Type: GrantFiled: April 21, 2008Date of Patent: June 16, 2015Assignee: International Business Machines CorporationInventors: Deok-kee Kim, Kenneth T. Settlemyer, Jr., Kangguo Cheng, Ramachandra Divakaruni, Carl J. Radens, Dirk Pfeiffer, Timothy Dalton, Katherina Babich, Arpan P. Mahorowala, Harald Okorn-Schmidt
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Patent number: 8895352Abstract: Techniques for forming a thin coating of a material on a carbon-based material are provided. In one aspect, a method for forming a thin coating on a surface of a carbon-based material is provided. The method includes the following steps. An ultra thin silicon nucleation layer is deposited to a thickness of from about two angstroms to about 10 angstroms on at least a portion of the surface of the carbon-based material to facilitate nucleation of the coating on the surface of the carbon-based material. The thin coating is deposited to a thickness of from about two angstroms to about 100 angstroms over the ultra thin silicon layer to form the thin coating on the surface of the carbon-based material.Type: GrantFiled: June 2, 2009Date of Patent: November 25, 2014Assignee: International Business Machines CorporationInventors: Katherina Babich, Alessandro Callegari, Zhihong Chen, Edward Kiewra, Yanning Sun
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Patent number: 8816333Abstract: Techniques for forming a thin coating of a material on a carbon-based material are provided. In one aspect, a method for forming a thin coating on a surface of a carbon-based material is provided. The method includes the following steps. An ultra thin silicon nucleation layer is deposited to a thickness of from about two angstroms to about 10 angstroms on at least a portion of the surface of the carbon-based material to facilitate nucleation of the coating on the surface of the carbon-based material. The thin coating is deposited to a thickness of from about two angstroms to about 100 angstroms over the ultra thin silicon layer to form the thin coating on the surface of the carbon-based material.Type: GrantFiled: May 29, 2012Date of Patent: August 26, 2014Assignee: International Business Machines CorporationInventors: Katherina Babich, Alessandro Callegari, Zhihong Chen, Edward Kiewra, Yanning Sun
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Publication number: 20130224944Abstract: Methods for fabricating integrated circuits using tailored chamfered gate liner profiles are provided. In an exemplary embodiment, a method for fabricating an integrated circuit includes forming a dummy gate electrode overlying a semiconductor substrate and forming a liner on sidewalls of the dummy gate electrode. A dielectric material is deposited overlying the dummy gate electrode, the liner, and the substrate. The dummy gate electrode is exposed by chemical mechanical planarization. A portion of the dummy gate electrode is removed and the liner is isotropically etched such that it has a chamfered surface. A remainder of the dummy gate electrode is removed to form an opening that is filled with a metal.Type: ApplicationFiled: February 27, 2012Publication date: August 29, 2013Applicant: GLOBALFOUNDRIES Inc.Inventors: Puneet Khanna, Dae-han Choi, Katherina Babich, Catherine Labelle
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Publication number: 20120235119Abstract: Techniques for forming a thin coating of a material on a carbon-based material are provided. In one aspect, a method for forming a thin coating on a surface of a carbon-based material is provided. The method includes the following steps. An ultra thin silicon nucleation layer is deposited to a thickness of from about two angstroms to about 10 angstroms on at least a portion of the surface of the carbon-based material to facilitate nucleation of the coating on the surface of the carbon-based material. The thin coating is deposited to a thickness of from about two angstroms to about 100 angstroms over the ultra thin silicon layer to form the thin coating on the surface of the carbon-based material.Type: ApplicationFiled: May 29, 2012Publication date: September 20, 2012Applicant: International Business Machines CorporationInventors: Katherina Babich, Alessandro Callegari, Zhihong Chen, Edward Kiewra, Yanning Sun
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Patent number: 7998871Abstract: Methods of forming a mask for implanting a substrate and implanting using an implant stopping layer with a photoresist provide lower aspect ratio masks that cause minimal damage to trench isolations in the substrate during removal of the mask. In one embodiment, a method of forming a mask includes: depositing an implant stopping layer over the substrate; depositing a photoresist over the implant stopping layer, the implant stopping layer having a density greater than the photoresist; forming a pattern in the photoresist by removing a portion of the photoresist to expose the implant stopping layer; and transferring the pattern into the implant stopping layer by etching to form the mask. The implant stopping layer may include: hydrogenated germanium carbide, nitrogenated germanium carbide, fluorinated germanium carbide, and/or amorphous germanium carbon hydride (GeHX), where X includes carbon. The methods/mask reduce scattering during implanting because the mask has higher density than conventional masks.Type: GrantFiled: June 25, 2008Date of Patent: August 16, 2011Assignee: International Business Machines CorporationInventors: Katherina Babich, Todd C. Bailey, Richard A. Conti, Ryan P. Deschner
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Publication number: 20100301336Abstract: Techniques for forming a thin coating of a material on a carbon-based material are provided. In one aspect, a method for forming a thin coating on a surface of a carbon-based material is provided. The method includes the following steps. An ultra thin silicon nucleation layer is deposited to a thickness of from about two angstroms to about 10 angstroms on at least a portion of the surface of the carbon-based material to facilitate nucleation of the coating on the surface of the carbon-based material. The thin coating is deposited to a thickness of from about two angstroms to about 100 angstroms over the ultra thin silicon layer to form the thin coating on the surface of the carbon-based material.Type: ApplicationFiled: June 2, 2009Publication date: December 2, 2010Applicant: International Business Machines CorporationInventors: Katherina Babich, Alessandro Callegari, Zhihong Chen, Edward Kiewra, Yanning Sun
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Patent number: 7651947Abstract: Methods of forming a mask for implanting a substrate and implanting using an implant stopping layer with a photoresist provide lower aspect ratio masks that cause minimal damage to trench isolations in the substrate during removal of the mask. In one embodiment, a method of forming a mask includes: depositing an implant stopping layer over the substrate; depositing a photoresist over the implant stopping layer, the implant stopping layer having a density greater than the photoresist; forming a pattern in the photoresist by removing a portion of the photoresist to expose the implant stopping layer; and transferring the pattern into the implant stopping layer by etching to form the mask. The implant stopping layer may include: hydrogenated germanium carbide, nitrogenated germanium carbide, fluorinated germanium carbide, and/or amorphous germanium carbon hydride (GeHX), where X includes carbon. The methods/mask reduce scattering during implanting because the mask has higher density than conventional masks.Type: GrantFiled: May 25, 2006Date of Patent: January 26, 2010Assignee: International Business Machines CorporationInventors: Katherina Babich, Todd C. Bailey, Richard A. Conti, Ryan P. Deschner
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Patent number: 7648820Abstract: Antireflective hardmask compositions and techniques for the use of antireflective hardmask compositions for processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask layer for lithography is provided. The antireflective hardmask layer comprises a carbosilane polymer backbone comprising at least one chromophore moiety and at least one transparent moiety; and a crosslinking component. In another aspect of the invention, a method for processing a semiconductor device is provided. The method comprises the steps of: providing a material layer on a substrate; forming an antireflective hardmask layer over the material layer. The antireflective hardmask layer comprises a carbosilane polymer backbone comprising at least one chromophore moiety and at least one transparent moiety; and a crosslinking component.Type: GrantFiled: December 21, 2006Date of Patent: January 19, 2010Assignee: International Business Machines CorporationInventors: Katherina Babich, Elbert Huang, Arpan P. Mahorowala, David R. Medeiros, Dirk Pfeiffer, Karen Temple
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Patent number: 7611758Abstract: A method and apparatus for improving the post-development photoresist profile on a deposited dielectric film. The method includes depositing a TERA film having tunable optical and etch resistant properties on a substrate using a plasma-enhanced chemical vapor deposition process and post processing the TERA film using a plasma process. The apparatus includes a chamber having an upper electrode coupled to a first RF source and a substrate holder coupled to a second RF source; and a showerhead for providing multiple precursors and process gasses.Type: GrantFiled: November 6, 2003Date of Patent: November 3, 2009Assignees: Tokyo Electron Limited, International Business Machines CorporationInventors: Noriaki Fukiage, Katherina Babich
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Patent number: 7497959Abstract: Increased protection of areas of a chip are provided by both a mask structure of increased robustness in regard to semiconductor manufacturing processes or which can be removed with increased selectivity and controllability in regard to underlying materials, or both. Mask structures are provided which exhibit an interface of a chemical reaction, grain or material type which can be exploited to enhance either or both types of protection. Structures of such masks include TERA material which can be converted or hydrated and selectively etched using a mixture of hydrogen fluoride and a hygroscopic acid or organic solvent, and two layer structures of similar or dissimilar materials.Type: GrantFiled: May 11, 2004Date of Patent: March 3, 2009Assignee: International Business Machines CorporationInventors: Deok-kee Kim, Kenneth T. Settlemyer, Jr., Kangguo Cheng, Ramachandra Divakaruni, Carl J. Radens, Dirk Pfeiffer, Timothy Dalton, Katherina Babich, Arpan P. Mahorowala, Harald Okorn-Schmidt
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Publication number: 20090004869Abstract: Methods of forming a mask for implanting a substrate and implanting using an implant stopping layer with a photoresist provide lower aspect ratio masks that cause minimal damage to trench isolations in the substrate during removal of the mask. In one embodiment, a method of forming a mask includes: depositing an implant stopping layer over the substrate; depositing a photoresist over the implant stopping layer, the implant stopping layer having a density greater than the photoresist; forming a pattern in the photoresist by removing a portion of the photoresist to expose the implant stopping layer; and transferring the pattern into the implant stopping layer by etching to form the mask. The implant stopping layer may include: hydrogenated germanium carbide, nitrogenated germanium carbide, fluorinated germanium carbide, and/or amorphous germanium carbon hydride (GeHX), where X includes carbon. The methods/mask reduce scattering during implanting because the mask has higher density than conventional masks.Type: ApplicationFiled: June 25, 2008Publication date: January 1, 2009Inventors: Katherina Babich, Todd C. Bailey, Richard A. Conti, Ryan P. Deschner
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Publication number: 20080286545Abstract: Methods of forming a mask for implanting a substrate and implanting using an implant stopping layer with a photoresist provide lower aspect ratio masks that cause minimal damage to trench isolations in the substrate during removal of the mask. In one embodiment, a method of forming a mask includes: depositing an implant stopping layer over the substrate; depositing a photoresist over the implant stopping layer, the implant stopping layer having a density greater than the photoresist; forming a pattern in the photoresist by removing a portion of the photoresist to expose the implant stopping layer; and transferring the pattern into the implant stopping layer by etching to form the mask. The implant stopping layer may include: hydrogenated germanium carbide, nitrogenated germanium carbide, fluorinated germanium carbide, and/or amorphous germanium carbon hydride (GeHX), where X includes carbon. The methods/mask reduce scattering during implanting because the mask has higher density than conventional masks.Type: ApplicationFiled: June 25, 2008Publication date: November 20, 2008Inventors: Katherina Babich, Todd C. Bailey, Richard A. Conti, Ryan P. Deschner
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Publication number: 20080261128Abstract: Increased protection of areas of a chip are provided by both a mask structure of increased robustness in regard to semiconductor manufacturing processes or which can be removed with increased selectivity and controllability in regard to underlying materials, or both. Mask structures are provided which exhibit an interface of a chemical reaction, grain or material type which can be exploited to enhance either or both types of protection. Structures of such masks include TERA material which can be converted or hydrated and selectively etched using a mixture of hydrogen fluoride and a hygroscopic acid or organic solvent, and two layer structures of similar or dissimilar materials.Type: ApplicationFiled: April 21, 2008Publication date: October 23, 2008Inventors: Deok-kee Kim, Kenneth T. Settlemyer, Kangguo Cheng, Ramachandra Divakaruni, Carl J. Radens, Dirk Pfeiffer, Thimothy Dalton, Katherina Babich, Arpan P. Mahorowala, Harald Okorn-Schmidt
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Publication number: 20080093640Abstract: A method that allows for uniform, simultaneous epitaxial growth of a semiconductor material on dissimilarly doped semiconductor surfaces (n-type and p-type) that does not impart substrate thinning via a novel surface preparation scheme, as well as a structure that results from the implementation of this scheme into the process integration flow for integrated circuitry are provided. The method of the present invention can by used for the selective or nonselective epitaxial growth of semiconductor material from the dissimilar surfaces.Type: ApplicationFiled: December 17, 2007Publication date: April 24, 2008Applicant: International Business Machines CorporationInventors: Katherina Babich, Bruce Doris, David Medeiros, Devendra Sadana
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Publication number: 20070275563Abstract: Methods of forming a mask for implanting a substrate and implanting using an implant stopping layer with a photoresist provide lower aspect ratio masks that cause minimal damage to trench isolations in the substrate during removal of the mask. In one embodiment, a method of forming a mask includes: depositing an implant stopping layer over the substrate; depositing a photoresist over the implant stopping layer, the implant stopping layer having a density greater than the photoresist; forming a pattern in the photoresist by removing a portion of the photoresist to expose the implant stopping layer; and transferring the pattern into the implant stopping layer by etching to form the mask. The implant stopping layer may include: hydrogenated germanium carbide, nitrogenated germanium carbide, fluorinated germanium carbide, and/or amorphous germanium carbon hydride (GeHX), where X includes carbon. The methods/mask reduce scattering during implanting because the mask has higher density than conventional masks.Type: ApplicationFiled: May 25, 2006Publication date: November 29, 2007Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Katherina Babich, Todd C. Bailey, Richard A. Conti, Ryan P. Deschner