Abstract: A sputtering apparatus (SM) has a vacuum chamber in which is disposed a target. A plasma atmosphere is formed inside the vacuum chamber to thereby sputter the target. The sputtered particles splashed from the target are caused to get adhered to, and deposited on, a surface of a substrate disposed in the vacuum chamber, thereby forming a predetermined thin film thereon. At such a predetermined position inside the vacuum chamber as is subject to adhesion of the sputtered particles splashed from the target, there is disposed an adhesion body whose at least the surface of adhesion of the sputtered particles is made of a material equal in kind to that of the target. The adhesion body has connected thereto a bias power supply for applying a bias voltage having negative potential at the time of forming the plasma atmosphere.

Abstract: The sputtering apparatus has a vacuum chamber in which is disposed a target. While rotating a circular substrate at a predetermined rotational speed with a center of the substrate, the target is sputtered to form the thin film on the surface. The sputtering apparatus has: a stage for rotatably holding the substrate in a state in which the center of the substrate is offset by a predetermined distance to radially one side from the center of the target; and a shielding plate disposed between the target and the substrate on the stage. The shielding plate has an opening part allowing to pass sputtered particles scattered out of the target as a result of sputtering the target. The opening part has a contour in which, with a central region of the substrate serving as an origin, the area of the opening part gradually increases from the origin toward radially outward.

Abstract: A sputtering apparatus (SM) has a vacuum chamber in which is disposed a target. A plasma atmosphere is formed inside the vacuum chamber to thereby sputter the target. The sputtered particles splashed from the target are caused to get adhered to, and deposited on, a surface of a substrate disposed in the vacuum chamber, thereby forming a predetermined thin film thereon. At such a predetermined position inside the vacuum chamber as is subject to adhesion of the sputtered particles splashed from the target, there is disposed an adhesion body whose at least the surface of adhesion of the sputtered particles is made of a material equal in kind to that of the target. The adhesion body has connected thereto a bias power supply for applying a bias voltage having negative potential at the time of forming the plasma atmosphere.

Abstract: The sputtering apparatus has a vacuum chamber in which is disposed a target. While rotating a circular substrate at a predetermined rotational speed with a center of the substrate, the target is sputtered to form the thin film on the surface. The sputtering apparatus has: a stage for rotatably holding the substrate in a state in which the center of the substrate is offset by a predetermined distance to radially one side from the center of the target; and a shielding plate disposed between the target and the substrate on the stage. The shielding plate has an opening part allowing to pass sputtered particles scattered out of the target as a result of sputtering the target. The opening part has a contour in which, with a central region of the substrate serving as an origin, the area of the opening part gradually increases from the origin toward radially outward.

Abstract: A method of forming an internal stress control film on one surface of an object to be processed by a sputtering method, includes selecting a pressure of a process gas at the time of forming the internal stress control film from a pressure region higher than a threshold value of 5 (Pa) so that stress of the object to be processed when a bias is applied to the object to be processed becomes larger stress on a tensile side and the internal stress control film has higher density, as compared with stress in a case in which a bias is not applied thereto.

Abstract: A cathode device includes a rotation plate to which a magnetic circuit is fixed, a rotation mechanism including a rotation shaft that rotates the rotation plate when receiving power from a motor, and a linear motion parallel link mechanism. The parallel link mechanism includes an end effector, six links each having a distal end and a proximal end, and three linear motion mechanisms. The end effector rotationally supports the rotation shaft, the distal ends of the links are connected to the end effector, the links radially extend from the end effector, and the linear motion mechanisms move the proximal ends of adjacent two of the links in one direction when receiving power from respective linear actuators. A controller controls a change in position of the rotation shaft performed by a cooperative operation of the linear actuators, and controls rotation of the rotation shaft operated by the motor.

Abstract: A cathode device (20) includes a rotation plate (26) to which a magnetic circuit (27) is fixed, a rotation mechanism (21) including a rotation shaft (25) that rotates the rotation plate (26) when receiving power from a motor (21M), a linear motion parallel link mechanism (22 to 24), and a controller (30). The linear motion parallel link mechanism (22 to 24) includes an end effector (24), six links (23) each having a distal end and a proximal end, and three linear motion mechanisms (22). The end effector (24) rotationally supports the rotation shaft (25). The distal ends of the links (23) are connected to the end effector (24). The links (23) radially extend from the end effector (24). The linear motion mechanisms (22) move the proximal ends of adjacent two of the links (23) in one direction when receiving power from respective linear actuators (22M).

Abstract: A method of forming an internal stress control film on one surface of an object to be processed by a sputtering method, includes selecting a pressure of a process gas at the time of forming the internal stress control film from a pressure region higher than a threshold value of 5 (Pa) so that stress of the object to be processed when a bias is applied to the object to be processed becomes larger stress on a tensile side and the internal stress control film has higher density, as compared with stress in a case in which a bias is not applied thereto.

Abstract: A substrate processing device including an accommodation unit that accommodates a substrate. A gas supply unit supplies plasma generation gas. A plasma supply unit generates plasma from the plasma generation gas supplied by the gas supply unit and supplies the plasma to the accommodation unit. The plasma generation gas is a gas mixture of hydrogen gas and an additive gas or a gas combining the gas mixture and a rare gas. The additive gas includes at least either one of nitrogen atoms and oxygen atoms. The gas supply unit is configured to supply the plasma supply unit with the plasma generation gas so that a flow ratio that is a ratio of a flow of the additive gas relative to a flow of the hydrogen gas is 1/500 or greater.

Abstract: A curvilinear motion rolling guide unit is such that pipe members adapted to form return passages are disposed respectively at undercuts of wings of an arcuate casing, thereby reducing working costs. A slider has a casing and end caps fixed to respective opposite ends of the casing. Pipe members adapted to form return passages are disposed at the respective undercuts formed on the wings of the casing. Cover members have longitudinally extending grooves, respectively, for covering the pipe members. Fitting grooves formed at opposite ends of the grooves of the cover members are fitted to direction changing passages provided in the respective end caps, whereby the cover members are fixed to the end caps.

Abstract: A method of forming a hard mask includes depositing step for depositing a titanium nitride film on a surface of a to-be-processed object; adsorbing step for adsorbing oxygen-containing molecules onto a surface of the titanium nitride film; and heating step for heating the titanium nitride film to a predetermined temperature.

Abstract: A curvilinear motion rolling guide unit is such that pipe members adapted to form return passages are disposed respectively at undercuts of wings of an arcuate casing, thereby reducing working costs. A slider has a casing and end caps fixed to respective opposite ends of the casing. Pipe members adapted to form return passages are disposed at the respective undercuts formed on the wings of the casing. Cover members have longitudinally extending grooves, respectively, for covering the pipe members. Fitting grooves formed at opposite ends of the grooves of the cover members are fitted to direction changing passages provided in the respective end caps, whereby the cover members are fixed to the end caps.

Abstract: [Problem] To attain weight saving or the like of a light source unit. [Means for Solving the Problem] The present invention includes a light source portion 10 and a socket portion 11. The socket portion 11 is an integrated structural part which is composed of an insulation member 7, a thermo conductive resin member 8, and electric power feeding members 91 to 93. As a result, according to the present invention, the thermo conductive resin member 8 is used as a heat radiation member to radiate to the outside a heat which is generated at the light source portion 10 and thus it is possible to save the weight of the light source unit 1, save manufacturing costs, and improve durability of a die in comparison with that of a conventional die cast.

Abstract: A capacity of a sealing member is reduced to its required minimum. The present invention provides: a board 3; light emitting chips 40 to 44; a control element; wiring elements 51 to 56, 61 to 65, and 610 to 650; a bank member 18; and a sealing member 180. The sealing member 180 is injected into the bank member 18, and the light emitting chips 40 to 44 and a part of the wiring elements are sealed. The present invention is capable of reducing the capacity of the sealing member 180 to its required minimum by means of the bank member 18.

Abstract: In a conventional driving circuit, it has been inefficient and difficult to measure, classify, and rank (Vf) characteristics of a light emitting element that is in a bare-chip state. According to the present invention, a semiconductor-type light source is made of four light emitting chips (41 to 44) that are in a bare-chip state, the light emitting chips being randomly mounted on a board (3) without classifying (Vf) characteristics in advance. As the resistors, opening resistors (R2, R4, R6) and trimming resistors (R1, R3, R5) are disposed in parallel and then are connected in series to the four light emitting chips. Values of the resistors are adjusted so that a predetermined set current value or luminous flux value is reliably obtained with respect to the four light emitting chips. As a result, the present invention is capable of efficiently and easily mounting the four light emitting elements (41 to 44) and the resistors (R1 to R7) on the board (3).

Abstract: A method of forming a hard mask includes depositing step for depositing a titanium nitride film on a surface of a to-be-processed object; adsorbing step for adsorbing oxygen-containing molecules onto a surface of the titanium nitride film; and heating step for heating the titanium nitride film to a predetermined temperature.

Abstract: A hard mask is provided which, while having a film density to demonstrate etching resistance, is low in film stress. The hard mask HD of this invention, which is provided to restrict the range of processing to the surface of a to-be-processed object W at the time of performing a predetermined processing to the to-be-processed object, is constituted by a titanium nitride film. This titanium nitride film is made into a two-layer structure. A lower-side layer L1 has a film thickness h1 within a range of 5 to 50% of the total film thickness ht of the hard mask, and also has a film density within a range of 3.5 to 4.7 g/cm3. An upper-side layer has a film density within a range of 4.8 to 5.3 g/cm3.

Abstract: [Problem] To attain weight saving or the like of a light source unit. [Means for Solving the Problem] The present invention includes a light source portion 10 and a socket portion 11. The socket portion 11 is an integrated structural part which is composed of an insulation member 7, a thermo conductive resin member 8, and electric power feeding members 91 to 93. As a result, according to the present invention, the thermo conductive resin member 8 is used as a heat radiation member to radiate to the outside a heat which is generated at the light source portion 10 and thus it is possible to save the weight of the light source unit 1, save manufacturing costs, and improve durability of a die in comparison with that of a conventional die cast.

Abstract: The present invention includes a light source 10 and a socket 11. The light source 10 includes a base plate 3, light emitting chips 41 to 44 for a semiconductor-type light source, resistors 51, 52, diodes 53, 54 and wiring 6. The socket 11 includes an insulating member 7, a radiating member 8 and feed members 91 to 93. The light source 10 is attached to the socket 11. The base plate 3 is attached to the radiating member 8. Such a structure of the present invention can be implemented in reduced size and with an enhanced heat radiation effect.

Abstract: Disclosed is a surface-treated ceramic member which has a coating film-formed surface comprising a ceramic sintered body with a porosity of 1% or less and a sol-gel coating film of a silicon alkoxide compound polymer formed on at least a part of a ceramic sintered body, wherein the coating film and the surface of the body are coexistent in the coating film-formed surface. Specifically the area of the sol-gel coating film accounts for 5 to 80% of the total area of the coating film-formed surface. The surface-treated ceramic member has excellent corrosion resistance and is free from scattering of particles.