Abstract: Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1-xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1-xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1-xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1-x

Abstract: Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1−xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1−xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1−xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semic

Abstract: A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1-x3)y3In1-y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1-x2)y2In1-y2N emission layer (5), and a Mg-doped (Alx1Ga1-x1)y1In1-y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 &mgr;m thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 &mgr;m thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 &mgr;m thickness. The p-layer 6 has about a 1.0 &mgr;m thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8).

Abstract: A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1−x3)y3In1−y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1−x2)y2In1−y2N emission layer (5), and a Mg-doped (Alx1Ga1−x1)y1In1−y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 &mgr;m thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 &mgr;m thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 &mgr;m thickness. The p-layer 6 has about a 1.0 &mgr;m thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8).

Abstract: A semiconductor device having an n-type layer of gallium nitride that is doped with silicon and has a resistively ranging from 3×10−1 &OHgr;cm to 8×10−3 &OHgr;cm or a carrier concentration ranging from 6×1016/cm3 to 3×1018/cm3.

Abstract: A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n.sup.+ -layer (3) of high carrier (n-type) concentration, a Si-doped (Al.sub.x3 Ga.sub.1-x3).sub.y3 In.sub.1-y3 N n.sup.+ -layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Al.sub.x2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N emission layer (5), and a Mg-doped (Al.sub.x1 Ga.sub.1-x1).sub.y1 In.sub.1-y1 N p-layer (6). The AlN layer (2)--is 500 .ANG. in thickness. The GaN N.sup.+ -layer (3) is about 2.0 .mu.m in thickness and has an electron concentration of about 2.times.10.sup.18 /cm.sup.3. The n.sup.+ -layer (4) is about 2.0 .mu.m in thickness and has an electron concentration of about 2.times.10.sup.18 /cn.sup.3. The emission layer (5) is about 0.5 .mu.m in thickness. The p-layer 6 is about 1.0 .mu.m in thickness and has a hole concentration of about 2.times.10.sup.17 /cm.sup.3. Nickel electrodes (7, 8) are connected to the p-layer (6) and n.sup.

Abstract: Disclosed is a light-emitting semiconductor device which comprises an N-layer of N-type nitrogen-Group III compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0 and x=y=0, a P-layer of P-type nitrogen-Group III compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0 and x=y=0 and a Zn doped semi-insulating I-layer of nitrogen-Group III compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0 and x=y=0. The semi-insulating I-layer has a 20 to 3000 .ANG. thickness and can emit light in the range of 485 to 490 nm. By employing the I-layer, the light-emitting diode as a whole can emit light in the range of 450 to 480 nm.

Abstract: A light-emitting semiconductor device using a gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N) having an i.sub.L -layer of insulating gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) containing a low concentration of p-type impurities. An i.sub.H -layer of insulating gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) containing a high concentration of p-type impurities is adjacent to the i.sub.L -layer. An n-layer of n-type gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) of low carrier concentration is adjacent to the i.sub.L -layer. An n.sup.+ -layer of n-type gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) of high carrier concentration doped with n-type impurities is adjacent to the n-layer.

Abstract: A light-emitting semiconductor device (100) suitable for use in multi-color flat panel displays includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n.sup.+ -layer (3) of high carrier (n-type) concentration, a Si-doped (Al.sub.x2 Ga.sub.1 -x.sub.2).sub.y2 In.sub.1-2 N n.sup.+ -layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped p-type (Al.sub.x1 Ga.sub.1-x1).sub.y1 In.sub.1-y1 N emission layer (5), and a Mg-doped (Al.sub.x2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N p-layer (6). The AlN layer (2) has a 500 .ANG. thickness. The GaN n.sup.+ -layer (3) is about a 2.0 .mu.m thick and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The n.sup.+ -layer (4) is about a 2.0 .mu.m in thickness and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The emission layer (5) is about 0.5 .mu.m thick. The p-layer 6 is about 1.0 .mu.m thick and has a 2.times.10.sup.17 /cm.sup.3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n.sup.

Abstract: A method of manufacturing two sapphireless layers (3a, 3b) at one time made of Group III nitride compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0, and x=y=0, and a LED (10) utilizing one of the semiconductor layers (3a, 3b) as a substrate (3) includes the steps of forming two zinc oxide (ZnO) intermediate layers (2a, 2b) on each side of a sapphire substrate (1), forming two Group III nitride compound semiconductor layers (3a, 3b) satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0, and x=y=0, each laminated on each of the intermediate ZnO layers (2a, 2b), and separating the intermediate ZnO layers (2a, 2b) from the sapphire substrate (1) by etching with an etching liquid only for the ZnO layers (2a, 2b).

Abstract: A gallium nitride group compound semiconductor laser diode (10) satisfying the formula (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N, inclusive of 0.ltoreq.x.ltoreq.1 and 0.ltoreq.y.ltoreq.1 comprises by a double hetero-junction structure sandwiching an active layer (5) between layers (4, 6) having wider band gaps than the active layer (5). The active layer (5) may comprise magnesium (Mg) doped p-type conductive gallium nitride group compound semiconductor satisfying the formula (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N, inclusive of 0.ltoreq.x.ltoreq.1 and 0.ltoreq.y.ltoreq.1 . In another embodiment, the active layer (5) is doped with silicon (Si).

Abstract: Disclosure is a process for producing a luminous element of III-group nitride semiconductor having a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) to which a II-group element is added, comprising the steps of forming a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) to which a II-group element is added; irradiating a low energy electron beam onto a topmost surface of the crystal layer to reform only the crystal layer; forming a thin film for absorbing optical energy on the topmost surface of the crystal layer; and pulse-heating the thin film for absorbing optical energy by heating means to reform only the crystal layer, thereby to produce a bluish green, blue or UV light emitting diode or a semiconductor laser diode with a high precision color purity.

Abstract: A light-emitting diode of GaN compound semiconductor emits a blue light from a plane rather than dots for improved luminous intensity. This diode includes a first electrode associated with a high-carrier density n.sup.+ layer and a second electrode associated with a high-impurity density i.sub.H -layer. These electrodes are made up of a first Ni layer (110 .ANG. thick), a second Ni layer (1000 .ANG. thick), an Al layer (1500 .ANG. thick), a Ti layer (1000 .ANG. thick), and a third Ni layer (2500 .ANG. thick). The Ni layers of dual structure permit a buffer layer to be formed between them. This buffer layer prevents the Ni layer from peeling. The direct contact of the Ni layer with GaN lowers a drive voltage for light emission and increases luminous intensity.

Abstract: Disclosed are a gallium nitride type semiconductor device that has a single crystal of (Ga.sub.1-x Al.sub.x).sub.1-y In.sub.y N, which suppresses the occurrence of crystal defects and thus has very high crystallization and considerably excellent flatness, and a method of fabricating the same. The gallium nitride type semiconductor device comprises a silicon substrate, an intermediate layer consisting of a compound containing at least aluminum and nitrogen and formed on the silicon substrate, and a crystal layer of (Ga.sub.1-x Al.sub.x).sub.1-y In.sub.y N (0.ltoreq.x.gtoreq.1, 0.ltoreq.y.ltoreq.1, excluding the case of x=1 and y=0). According to the method of fabricating a gallium nitride base semiconductor device, a silicon single crystal substrate is kept at a temperature of 400.degree. to 1300.degree. C.

Abstract: Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N) in which the n-layer of n-type gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N) is of double-layer structure including an n-layer of low carrier concentration and an n.sup.+ -layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an i.sub.L -layer of low impurity concentration containing p-type impurities in comparatively low concentration and an i.sub.

Abstract: A gallium nitride group compound semiconductor laser diode includes at least one pn junction layer disposed between an n-type layer and a p-type layer. The n-type layer is formed from a gallium nitride group compound semiconductor material defined by the composition equation (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N (where 0.ltoreq.x.ltoreq.1 and 0.ltoreq.y.ltoreq.1). The p-type layer, doped with an acceptor impurity, is obtained by electron beam irradiating a gallium nitride group compound semiconductor material defined by the composition equation (Al.sub.x' Ga.sub.1-x').sub.y' In.sub.1-y' N (where 0.ltoreq.x'.ltoreq.1, 0.ltoreq.y'.ltoreq.1, x=x' or x.noteq.x', and, y=y' or y.noteq.y'). The improved gallium nitride group semiconductor laser diode of the present invention is found to emit light in the visible short wavelength spectrum of light which includes the blue, violet and ultraviolet regions.

Abstract: Disclosed are a gallium nitride type semiconductor device that has a single crystal of (Ga.sub.l-x Al.sub.x).sub.l-y In.sub.y N, which suppresses the occurrence of crystal defects and thus has very high crystallization and considerably excellent flatness, and a method of fabricating the same. The gallium nitride type semiconductor device comprises a silicon substrate, an intermediate layer consisting of a compound containing at least aluminum and nitrogen and formed on the silicon substrate, and a crystal layer of (Ga.sub.l-x Al.sub.x).sub.l-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, excluding the case of x=1 and y=0). According to the method of fabricating a gallium nitride base semiconductor device, a silicon single crystal substrate is kept at a temperature of 400 to 1300.degree. C.

Abstract: A thin film of SiO.sub.2 is patterned on an N layer consisting of N-type Al.sub.x Ga.sub.1-x N (inclusive of x=0). Next, I-type Al.sub.x Ga.sub.1-x N (inclusive of x=0) is selectively grown and the portion on the N layer grows into an I-layer consisting an active layer of a light emitting diode, and that on the SiO.sub.2 thin film grows into a conductive layer. Electrodes are formed on the I-layer and conductive layer to constitute the light emitting diode. Also, on the surface a ({1120}) of a sapphire substrate, a buffer layer consisting of aluminum nitride is formed, onto which a gallium nitride group semiconductor is formed.

Abstract: A dry etching method for Al.sub.x Ga.sub.1-x N (0.ltoreq.x.ltoreq.1) semiconductor uses plasma of a boron trichloride (BCl.sub.3) gas. The etching rate of the method is 490 .ANG./min. No crystal defect is produced in the etched semiconductor by the dry etching with the plasma of a BCl.sub.3 gas. After etching with the plasma of a BCl.sub.3 gas, the semiconductor is successively etched by an inert gas. The electrode formed on the etched surface is contacted ohmicly with the semiconductor. Ohmic contact can be obtained without sintering. An LED is produced by the dry etching method. The LED comprises a substrate, an n-layer (Al.sub.x Ga.sub.1-x N; 0.ltoreq.x<1), an i-layer, an electrode formed on the etched surface of the n-layer through a through hole, the through hole being formed through the i-layer to the n-layer by the dry etching with the plasma of the born trichloride (BCl.sub.3) gas and being successively etched by the plasma of an inert gas, and an electrode formed on the surface of said i-layer.

Abstract: A light-emitting diode of GaN compound semiconductor emits a blue light from a plane rather than dots for improved luminous intensity. This diode includes a first electrode associated with a high-carrier density n.sup.+ layer and a second electrode associated with a high-impurity density .[.i.sub.H -layer.]. .Iadd.H-layer.Iaddend.. These electrodes are made up of a first Ni layer (110 .ANG. thick), a second Ni layer (1000 .ANG. thick), an Al layer (1500 .ANG. thick), a Ti layer (1000 .ANG. thick), and a third Ni layer (2500 .ANG. thick). The Ni layers of dual structure permit a buffer layer to be formed between them. This buffer layer prevents the Ni layer from peeling. The direct contact of the Ni layer with GaN lowers a drive voltage for light emission and increases luminous intensity.