Abstract: Target 1 that is arranged in the disc direction is sprayed from nozzle 2 that has a slit-shaped aperture. Target 1 is conveyed on a gas stream. He gas is used in this example. Nozzle 2 may be vibrated by a piezo apparatus to spray disc-shaped target 1. Target 1 that is sprayed from nozzle 2 reaches the irradiation position of laser light with its direction unchanged since the exterior of nozzle 2 is maintained in a high vacuum. Synchronized with delivery of target 1, pulse laser light 5 from Nd:YAG light source 4 is focused by lens 3 and irradiated onto target 1. The spot diameter of the laser is the same 1 mm diameter as that of target 1. The thickness is not more than 1000 nm. Therefore, virtually the entire target is converted into plasma, debris generation is inhibited and the conversion efficiency is elevated.

Abstract: An optical apparatus comprises a plurality of multilayer-film reflective mirrors that are capable of reflecting an electromagnetic wave in an extreme ultraviolet region. The multilayer-film reflective mirrors are arranged along an optical axis of the electromagnetic wave, and at least two of the multilayer-film reflective mirrors have reflecting wavelength characteristics being different from each other, in a wavelength region other than the extreme ultraviolet region.

Abstract: An optical apparatus comprises a plurality of multilayer-film reflective mirrors that are capable of reflecting a electromagnetic wave in an extreme ultraviolet region. The multilayer-film reflective mirrors are arranged along an optical axis of the electromagnetic wave, and at least two of the multilayer-film reflective mirrors have reflecting, wavelength characteristics being different from each other, in a wavelength region other than the extreme ultraviolet region.

Abstract: A multilayer mirror aims to reduce incidence angle dependence of reflectivity. A substrate is made of low thermal polished expansion glass with 0.2 nm RMS or less roughness of the surface. On the surface thereof formed is a Ru/Si multilayer having a wide full-width half maximum of peak reflectivity, and on the Ru/Si multilayer formed is a Mo/Si multilayer having a high peak reflectivity value. This enables higher reflectivity than when Ru/Si alone provided and a reflectivity peak having a wider full-width half maximum than when the Mo/Si multilayer alone provided. Since Ru absorbs EUV ray more than Mo does, higher reflectivity is obtainable than that of a structure having the Ru/Si multilayer formed on the Mo/Si multilayer. The multilayer with a wide full-width half maximum has small incidence angle dependence of reflectivity in spectral reflectivity, thereby achieving high imaging performance in projection optical system.

Abstract: An extreme ultraviolet exposure apparatus comprising a light source that emits extreme ultraviolet light, a plurality of illumination reflective mirrors that direct the extreme ultraviolet light emitted from the light source to a mask, a plurality of projection reflective mirrors that direct the extreme ultraviolet light reflected by the mask onto a sensitive substrate and that project and focus an image of the mask on this sensitive substrate, and a projection system optical housing that accommodates at least one of the projection reflective mirrors and at least one of the illumination reflective mirrors.

Abstract: A light source unit of EUV light is provided as a light source unit comprising a plasma light source for emitting EUV light, a collective mirror which has a reflecting surface of an ellipsoid of revolution and at a first focal point of which the plasma light source is located, and an auxiliary collective mirror which has a reflecting surface of a spherical surface and a spherical center of which is located as displaced from a position of the plasma light source.

Abstract: A multilayer mirror aims to reduce incidence angle dependence of reflectivity. A substrate is made of low thermal polished expansion glass with 0.2 nm RMS or less roughness of the surface. On the surface thereof formed is a Ru/Si multilayer having a wide full-width half maximum of peak reflectivity, and on the Ru/Si multilayer formed is a Mo/Si multilayer having a high peak reflectivity value. This enables higher reflectivity than when Ru/Si alone provided and a reflectivity peak having a wider full-width half maximum than when the Mo/Si multilayer alone provided. Since Ru absorbs EUV ray more than Mo does, higher reflectivity is obtainable than that of a structure having the Ru/Si multilayer formed on the Mo/Si multilayer. The multilayer with a wide full-width half maximum has small incidence angle dependence of reflectivity in spectral reflectivity, thereby achieving high imaging performance in projection optical system.

Abstract: There is disclosed an optical element, comprising, a supporting substrate, a multilayer film being supported on the substrate and reflecting extreme ultraviolet light, and an alloy layer provided between the multilayer film and the substrate.

Abstract: A liquid in which fine solid Sn particles are dispersed in a resin is accommodated inside the heated tank 4. The resin pressurized by a pressurizing pump is conducted to a nozzle 1, so that a liquid-form resin is caused to jet from the tip end of the nozzle 1 that is disposed inside a vacuum chamber 7. The liquid-form resin which is caused to jet from the nozzle 1 assumes a spherical shape as a result of surface tension, and is solidified by being cooled in a vacuum, so that a solid-form target 2 is formed. A laser introduction window 10 used for the introduction of laser light is formed in the vacuum chamber 7, and laser light generated from a laser light source 8 disposed on the outside of the vacuum chamber 7 is focused by a lens 9 and conducted into the vacuum chamber 7, so that the target is converted into a plasma, thus generating EUV light.

Abstract: A multilayer mirror aims to reduce incidence angle dependence of reflectivity. A substrate is made of low thermal polished expansion glass with 0.2 nm RMS or less roughness of the surface. On the surface thereof formed is a Ru/Si multilayer having a wide full-width half maximum of peak reflectivity, and on the Ru/Si multilayer formed is a Mo/Si multilayer having a high peak reflectivity value. This enables higher reflectivity than when Ru/Si alone provided and a reflectivity peak having a wider full- width half maximum than when the Mo/Si multilayer alone provided. Since Ru absorbs EUV ray more than Mo does, higher reflectivity is obtainable than that of a structure having the Ru/Si multilayer formed on the Mo/Si multilayer. The multilayer with a wide full-width half maximum has small incidence angle dependence of reflectivity in spectral reflectivity, thereby achieving high imaging performance in projection optical system.

Abstract: Target 1 that is arranged in the disc direction is sprayed from nozzle 2 that has a slit-shaped aperture. Target 1 is conveyed on a gas stream. He gas is used in this example. Nozzle 2 may be vibrated by a piezo apparatus to spray disc-shaped target 1. Target 1 that is sprayed from nozzle 2 reaches the irradiation position of laser light with its direction unchanged since the exterior of nozzle 2 is maintained in a high vacuum. Synchronized with delivery of target 1, pulse laser light 5 from Nd:YAG light source 4 is focused by lens 3 and irradiated onto target 1. The spot diameter of the laser is the same 1 mm diameter as that of target 1. The thickness is not more than 1000 nm. Therefore, virtually the entire target is converted into plasma, debris generation is inhibited and the conversion efficiency is elevated.

Abstract: A multilayer mirror aims to reduce incidence angle dependence of reflectivity. A substrate is made of low thermal polished expansion glass with 0.2 nm RMS or less roughness of the surface. On the surface thereof formed is a Ru/Si multilayer having a wide full-width half maximum of peak reflectivity, and on the Ru/Si multilayer formed is a Mo/Si multilayer having a high peak reflectivity value. This enables higher reflectivity than when Ru/Si alone provided and a reflectivity peak having a wider full-width half maximum than when the Mo/Si multilayer alone provided. Since Ru absorbs EUV ray more than Mo does, higher reflectivity is obtainable than that of a structure having the Ru/Si multilayer formed on the Mo/Si multilayer. The multilayer with a wide full-width half maximum has small incidence angle dependence of reflectivity in spectral reflectivity, thereby achieving high imaging performance in projection optical system.

Abstract: A light source unit of EUV light is provided as a light source unit comprising a plasma light source for emitting EUV light, a collective mirror which has a reflecting surface of an ellipsoid of revolution and at a first focal point of which the plasma light source is located, and an auxiliary collective mirror which has a reflecting surface of a spherical surface and a spherical center of which is located as displaced from a position of the plasma light source.

Abstract: An extreme ultraviolet exposure apparatus comprising a light source that emits extreme ultraviolet light, a plurality of illumination reflective mirrors that direct the extreme ultraviolet light emitted from the light source to a mask, a plurality of projection reflective mirrors that direct the extreme ultraviolet light reflected by the mask onto a sensitive substrate and that project and focus an image of the mask on this sensitive substrate, and a projection system optical housing that accommodates at least one of the projection reflective mirrors and at least one of the illumination reflective mirrors.

Abstract: Multilayer mirrors are disclosed for use especially in “Extreme Ultraviolet” (“soft X-ray,” or “EUV”) optical systems. Each multilayer mirror includes a stack of alternating layers of a first material and a second material, respectively, to form an EUV-reflective surface. The first material has a refractive index substantially the same as a vacuum, and the second material has a refractive index that differs sufficiently from the refractive index of the first material to render the mirror reflective to EUV radiation. The wavefront profile of EUV light reflected from the surface is corrected by removing (“machining” away) at least one surficial layer of the stack in selected region(s) of the surface of the stack. Machining can be performed such that machined regions have smooth tapered edges rather than abrupt edges. The stack can include first and second layer groups that allow the unit of machining to be very small, thereby improving the accuracy with which wavefront-aberration correction can be conducted.

Abstract: An optical unit of the invention includes an X-ray optical device, an airtight container housing the X-ray optical device in an airtight state, and valves or opening mechanisms fitted to an X-ray inlet and X-ray outlet of the airtight container. An X-ray exposure system of the invention includes an X-ray source generating X-rays, an illumination optical system irradiating X-rays from the X-ray source onto a mask, and an optical unit housing an X-ray optical device which constitutes a projection optical system projecting a pattern image formed on the mask onto a photosensitive substrate. With the optical unit and the X-ray exposure system, contamination on the surface of the optical device can be suppressed, thereby suppressing deterioration in reflectance of the optical device, and that in throughput of the exposure system.

Abstract: Apparatus and methods are disclosed for milling selected regions on the surface of a multilayer-film reflective surface of an X-ray mirror to correct the reflected wavefront produced by the mirror, thereby producing a more uniform or otherwise more desirable phase distribution of the reflected wavefront. The milled multilayer films include multiple lamina sets each including respective layers of at least two respective substances. The layers usually are “stacked” alternatingly at a fixed period length on a mirror substrate. By selectively removing one or more surficial layers in selected locations, local corrections of the phase shift of the reflective wavefront are achieved. At each milling location, the depth profile can be stepwise or smoothly gradated. Milling methods can include lapping, ion-beam bombardment, plasma-enhanced chemical vapor machining (CVM), reactive-ion etching, photochemical reactions, or laser ablation.

Abstract: Devices and methods are disclosed that provide effective utilization of light beams produced from multiple EUV-light sources, especially such sources that have been bundled. An embodiment of an EUV-source device comprises multiple individual EUV-light sources each providing a respective point-light source of EUV radiation propagating as a respective beam from each point-light source. A reflective focusing-optical system is situated downstream of the EUV-light sources, and is configured to focus the beams from the point-light sources at a focus point. A variable-angle mirror is situated downstream of the focusing-optical system and is configured to reflect light of the respective beams from the point-light sources that has been reflected by the focusing-optical system. A mirror-tilting mechanism is coupled to the variable-angle mirror. The mechanism, when activated, tilts the mirror by a respective angle corresponding to the particular beam from one of the point-light sources that is incident on the mirror.

Abstract: Devices and methods are disclosed that provide effective utilization of light beams produced from multiple EUV-light sources, especially such sources that have been bundled. An embodiment of an EUV-source device comprises multiple individual EUV-light sources each providing a respective point-light source of EUV radiation propagating as a respective beam from each point-light source. A reflective focusing-optical system is situated downstream of the EUV-light sources, and is configured to focus the beams from the point-light sources at a focus point. A variable-angle mirror is situated downstream of the focusing-optical system and is configured to reflect light of the respective beams from the point-light sources that has been reflected by the focusing-optical system. A mirror-tilting mechanism is coupled to the variable-angle mirror. The mechanism, when activated, tilts the mirror by a respective angle corresponding to the particular beam from one of the point-light sources that is incident on the mirror.

Abstract: Reflective optical components are disclosed for use in an X-ray optical system. The components (e.g., multilayer-film mirrors or reflective reticles) suppress contamination (e.g., carbon contamination) of their reflective surfaces during use. The multilayer film comprises alternating layers of first and second substances configured so as to confer high reflectivity to incident X-radiation (including perpendicularly incident radiation). The multilayer film includes a protective layer 1 formed of a material including a photocatalytic material) desirably formed on the uppermost layer of the multilayer film. If the optical component is a reticle, a patterned absorbing-body layer covers at least a portion of the multilayer film. A protective layer can be formed between the multilayer film and the absorbing-body layer, or in a blanketing manner over units of the absorbing-body layer and exposed portions of the multilayer film.

Abstract: Disclosed herein is a composition comprising an isocyanate-reactive compound and a catalyst comprising a bismuth carboxylate and a zirconium carboxylate, wherein the catalyst is present in an amount sufficient to catalyze a reaction with the isocyanate-reactive compound and a polyisocyanate. Also disclosed is a process for preparing a composition, which comprises contacting an isocyanate-reactive compound with a polyisocyanate, in the presence of an effective amount of a catalyst comprising a bismuth carboxylate and a zirconium carboxylate, under reaction conditions sufficient to form a composition containing at least one urethane group.