Abstract: Provided is a metal-covered gadolinium wire rod including: a gadolinium wire including gadolinium as a main component, as a core; and a clad layer including, as a main component, a metal other than gadolinium, the clad layer covering the periphery of the core.

Abstract: Provided is a gadolinium wire rod including gadolinium as a main component, wherein the average particle size of a segregated phase containing fluorine atom and/or chlorine atom is 2 ?m or less. The present invention can provide a gadolinium wire rod high in strength and excellent in processability.

Abstract: Provided is a heat exchanger 10 including: wires 121 formed of a magnetocaloric material having a magnetocaloric effect; and a case 13 filled with the wires 121, wherein a wire diameter of the wire 121 is smaller than 1 mm. According to the invention, it is possible to provide a heat exchanger capable of improving a heat exchange efficiency without causing an increase in size of a device.

Abstract: A semiconductor device includes a layered body, a gate electrode, a source electrode, a drain electrode, and a cap layer. The layered body includes a channel layer and a first low resistance region. The channel layer is made of a compound semiconductor. The first low resistance region is provided in a portion on surface side of the layered body. The gate electrode, the source electrode, and the drain electrode are each provided on top surface side of the layered body. The cap layer is provided between the first low resistance region and one or both of the source electrode and the drain electrode.

Abstract: A semiconductor device includes: a channel layer made of a compound semiconductor; a barrier layer provided above the channel layer and made of a compound semiconductor in which an energy band on a carrier travel side in a junction with respect to the channel layer is farther from an intrinsic Fermi level in the channel layer than in the channel layer; a low-resistance region provided in a surface layer of the barrier layer, in which resistance is kept lower than portions around by containing impurity; a source electrode and a drain electrode connected to the barrier layer at positions sandwiching the low-resistance region; agate insulating layer provided on the low-resistance region; and a gate electrode provided above the low-resistance region through the gate insulating layer.

Abstract: A running board apparatus including a first component with a hollow cross-section having an open end, the first component extending in a longitudinal direction; a second component with a closed cross-section that slides relative to the first component in a lateral direction, the second component extending in the longitudinal direction; and a positioning device with a first end attached to the first component and a second end attached to the second component. The positioning device is configured to move the second component with respect to the first component in the lateral direction and lock the second component and the first component in a plurality of positions.

Abstract: A running board apparatus including a first component with a hollow cross-section having an open end, the first component extending in a longitudinal direction; a second component with a closed cross-section that slides relative to the first component in a lateral direction, the second component extending in the longitudinal direction; and a positioning device with a first end attached to the first component and a second end attached to the second component. The positioning device is configured to move the second component with respect to the first component in the lateral direction and lock the second component and the first component in a plurality of positions.

Abstract: A fuel injection device (fuel supply system) of a common rail type fuel injection system for an engine includes a pressure sensor disposed in a fuel inlet of an injector for measuring a fuel pressure at a position where the sensor is disposed and an ECU for sensing various kinds of pressure fluctuations associated with the injection including a pressure leak due to an injection operation of the injector and waving characteristics due to actual injection thereof based on sensor outputs from the pressure sensor. The ECU serially obtains the sensor outputs from the pressure sensor at intervals of 20 ?sec.

Abstract: Provided is a semiconductor device that includes a drain electrode and a source electrode, a gate electrode, one or more gate-electrode extensions, and a link. The drain electrode and the source electrode have a planar shape of combs in mesh with each other. The gate electrode is provided between the drain electrode and the source electrode, and has a meandering planar shape. The one or more gate-electrode extensions are projected from the gate electrode. The link is confronted with one or both of the drain electrode and the source electrode, and couples the one or more gate-electrode extensions together.

Abstract: A semiconductor device includes: a laminated body including a channel layer that is configured of a compound semiconductor; and at least one gate electrode that is provided on a top surface side of the laminated body, wherein the laminated body includes a first low-resistance region that is provided on the top surface side of the laminated body, the first low-resistance region facing the at least one gate electrode, and a second low-resistance region that is provided externally of the first low resistance region on the top surface side of the laminated body, the second low-resistance region being continuous with the first low-resistance region.

Abstract: A vehicle headrest, including two side wings at opposite ends of the headrest that rotate around respective axes; and a locking mechanism that locks each of the side wings, and backwards movement is restricted by the locking mechanism when each side member is rotated around the respective axis.

Abstract: A semiconductor device includes: a channel layer made of a compound semiconductor; a barrier layer provided above the channel layer and made of a compound semiconductor in which an energy band on a carrier travel side in a junction with respect to the channel layer is farther from an intrinsic Fermi level in the channel layer than in the channel layer; a low-resistance region provided in a surface layer of the barrier layer, in which resistance is kept lower than portions around by containing impurity; a source electrode and a drain electrode connected to the barrier layer at positions sandwiching the low-resistance region; agate insulating layer provided on the low-resistance region; and a gate electrode provided above the low-resistance region through the gate insulating layer.

Abstract: A noise-cancellation headrest for a vehicle including a slidable side wing on a side of headrest; a plurality of microphones configured to detect an audio-noise signal and output a first plurality of electrical signals; a plurality of speakers configured to receive a second plurality of electrical signals and output an acoustic signal; and noise-cancellation circuitry configured to receive the first plurality of electrical signals and output the second plurality of electrical signals.

Abstract: A semiconductor device includes: a laminated body including a channel layer that is configured of a compound semiconductor; and at least one gate electrode that is provided on a top surface side of the laminated body, wherein the laminated body includes a first low-resistance region that is provided on the top surface side of the laminated body, the first low-resistance region facing the at least one gate electrode, and a second low-resistance region that is provided externally of the first low resistance region on the top surface side of the laminated body, the second low-resistance region being continuous with the first low-resistance region.

Abstract: A semiconductor device includes: a laminated body including a channel layer that is configured of a compound semiconductor; and at least one gate electrode that is provided on a top surface side of the laminated body, wherein the laminated body includes a first low-resistance region that is provided on the top surface side of the laminated body, the first low-resistance region facing the at least one gate electrode, and a second low-resistance region that is provided externally of the first low resistance region on the top surface side of the laminated body, the second low-resistance region being continuous with the first low-resistance region.

Abstract: Provided is a semiconductor apparatus including a channel layer, an upper barrier layer that is provided on the channel layer, a first barrier layer that constitutes a boundary layer on a side of the channel layer in the upper barrier layer, a second barrier layer that is provided in a surface layer of the upper barrier layer, a low-resistance region that is provided in at least a surface layer in the second barrier layer, a source electrode and a drain electrode that are connected to the second barrier layer, at positions across the low-resistance region, a gate insulating film that is provided on the low-resistance region, and a gate electrode that is provided above the low-resistance region via the gate insulating film.

Abstract: A semiconductor device includes: a channel layer made of a compound semiconductor; a barrier layer provided above the channel layer and made of a compound semiconductor in which an energy band on a carrier travel side in a junction with respect to the channel layer is farther from an intrinsic Fermi level in the channel layer than in the channel layer; a low-resistance region provided in a surface layer of the barrier layer, in which resistance is kept lower than portions around by containing impurity; a source electrode and a drain electrode connected to the barrier layer at positions sandwiching the low-resistance region; a gate insulating layer provided on the low-resistance region; and a gate electrode provided above the low-resistance region through the gate insulating layer.

Abstract: A side camera of a vehicle, including a camera housing rotatable in a first axis and a second axis each relative to an exterior surface of the vehicle, and a camera attached to the camera housing that captures image data. The camera is positioned in a plurality of positions by rotating the camera housing along the first axis and the second axis.

Abstract: A semiconductor device includes a channel layer; and a high resistance layer that is provided on the channel layer, and is made of a semiconductor with high resistance which has a conduction band position higher than that of the semiconductor which forms the channel layer. The semiconductor device includes a first conduction-type low resistance region provided on a surface layer of the high resistance layer, and is made of a semiconductor including first conduction type impurities. The semiconductor device includes: a source electrode and a drain electrode that are connected to the high resistance layer, in a position crossing the low resistance region; a gate insulating film provided on the low resistance region; and a gate electrode provided on the low resistance region via the gate insulating film. The semiconductor device includes current block regions between the low resistance region, and between the source electrode and the drain electrode respectively.

Abstract: Provided is a semiconductor apparatus including a channel layer, an upper barrier layer that is provided on the channel layer, a first barrier layer that constitutes a boundary layer on a side of the channel layer in the upper barrier layer, a second barrier layer that is provided in a surface layer of the upper barrier layer, a low-resistance region that is provided in at least a surface layer in the second barrier layer, a source electrode and a drain electrode that are connected to the second barrier layer, at positions across the low-resistance region, a gate insulating film that is provided on the low-resistance region, and a gate electrode that is provided above the low-resistance region via the gate insulating film.