Abstract: In one embodiment, a substrate processing liquid contains phosphoric acid as a primary component and contains water and ketone. In another embodiment, a substrate processing method includes processing a substrate in a substrate processing bath with a substrate processing liquid containing phosphoric acid, water and ketone. The method further includes discharging the substrate processing liquid from the substrate processing bath to a circulating flow channel, heating the substrate processing liquid flowing through the circulating flow channel at a temperature between 50° C. and 90° C., and supplying the substrate processing liquid again from the circulating flow channel to the substrate processing bath to circulate the substrate processing liquid under heating.

Abstract: In one embodiment, a substrate processing apparatus includes a substrate retainer and a substrate rotator to retain and rotate a substrate, liquid feeders to supply a cleaning liquid, a rinse liquid and a first coating liquid to a first face of the substrate, a heater to heat the substrate from a second face of the substrate, and a controller to control processing of the substrate. The controller supplies the first coating liquid to the first face while rotating the substrate at a first number of revolution. The controller heats the substrate from the second face while rotating the substrate at a second number of revolution that is different from the first number of revolution after the first coating liquid is supplied, to evaporate a solvent from the first coating liquid to form a coating film containing a solute of the first coating liquid on the first face.

Abstract: A method of manufacturing a semiconductor device including attaching, by a liquid treatment, a first liquid to a surface of a semiconductor substrate having a fine pattern formed therein; substituting the first liquid attached to the surface of the semiconductor substrate with a solution, the solution comprising a sublimate dissolved in a second liquid; vaporizing the second liquid and precipitating the sublimate to the surface of the semiconductor substrate to forma solid precipitate comprising the sublimate; and removing the precipitate by sublimation. For example, the sublimate may be a material having at least two carboxyl groups bonded to cyclohexane or a material formed of two carboxyl groups bonded to benzene with the bonding sites of the two carboxyl groups being adjacent to one another.

Abstract: According to one embodiment, a method for manufacturing a semiconductor device includes the following processes. Second layers and first layers are alternately stacked on a substrate to form a stack. A mask layer is formed on the first layer in a surface of the stack. A part of the mask layer is removed to expose part of the first layer, and a protective layer is formed in a surface layer of the mask layer. The exposed first layer is etched with a first etching solution to expose part of the second layer after forming the protective layer. The exposed second layer is etched with a second etching solution after etching the first layer. The mask layer is etched with a third etching solution to further expose part of the first layer, after etching the first layer and etching the second layer.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device is provided. The element isolation insulating bodies form active areas extending in one direction along a surface of a semiconductor substrate in a surface region of the semiconductor substrate, and partition the surface region into the active areas. The tunnel insulating films are formed on the active areas respectively. The floating gate electrodes are formed on the tunnel insulating films respectively. The inter-gate insulating films are formed on the floating gate electrodes. The control gate electrodes are provided on the inter-gate insulating films. The source regions and drain regions are formed in the active areas respectively. Each of the active areas has steps at side surfaces. A width of a portion of each of the active areas deeper than the steps is larger than that of a portion of each of the active areas shallower than the steps.

Abstract: An operating device includes: a substrate on which a plurality of electrode patterns are formed; and a sliding electrode which has three contact points sliding on the plurality of electrode patterns, which is held by an operating member that is displaced relative to the substrate according to an input operation, and whose state of connection with each of the plurality of electrode patterns at the three contact points is switched according to the displacement of the operating member. Three gaps located on three trajectories, on which the three contact points move according to the displacement of the operating member, are provided between the two adjacent electrode patterns. In a state in which any one of the contact points is located in one of the gaps, the other two or more contact points are in contact with any one of the plurality of electrode patterns.

Abstract: A method of manufacturing a semiconductor device including attaching, by a liquid treatment, a first liquid to a surface of a semiconductor substrate having a fine pattern formed therein; substituting the first liquid attached to the surface of the semiconductor substrate with a solution, the solution comprising a sublimate dissolved in a second liquid; vaporizing the second liquid and precipitating the sublimate to the surface of the semiconductor substrate to form a solid precipitate comprising the sublimate; and removing the precipitate by sublimation. For example, the sublimate may be a material having at least two carboxyl groups bonded to cyclohexane or a material formed of two carboxyl groups bonded to benzene with the bonding sites of the two carboxyl groups being adjacent to one another.

Abstract: A substrate treatment apparatus according to an embodiment includes a treatment part, a cyclic path, a heater, and a first injector. The treatment part is supplied with an etchant containing phosphoric acid and a silica deposition suppressor, and brings a substrate having a silicon nitride film on a surface thereof into contact with the etchant to remove the silicon nitride film from the substrate. The cyclic path circulates the etchant in the treatment part. The heater heats the etchant. The first injector is provided on the cyclic path, and injects the silica deposition suppressor into the etchant.

Abstract: A substrate processing method according to an embodiment is a substrate processing method for drying a substrate. The substrate processing method includes supplying a solution in which a sublimation material is dissolved in a first solvent to a surface of a cleaned substrate. The substrate processing method includes eliminating at least a portion of association states of the sublimation material. The substrate processing method includes precipitating the sublimation material on the surface of the substrate. The substrate processing method includes removing the precipitated sublimation material by sublimation.

Abstract: An electrostatic coating device comprising a nozzle section that discharges a liquid to a substrate, a counter electrode that is disposed in such a way as to face the nozzle section and supports the substrate and a power source device that applies a voltage between the nozzle section and the counter electrode further comprises an instantaneous stop circuit that selectively grounds the nozzle section. When the nozzle section is grounded by the instantaneous stop circuit, a charge remaining in the nozzle section goes to the ground and the charge remaining in the nozzle section disappears. For this reason, after the power source device is turned off, dripping of the liquid from the nozzle section can be completed as quickly as possible.

Abstract: A substrate treatment apparatus includes a processing chamber configured to be capable of storing a substrate; a substrate holder disposed in the processing chamber and configured to be capable of holding the substrate; a sublimation removing unit configured to remove, by sublimation, a sublimating material filled between structures formed on a surface of a substrate held by the substrate holder, and a sublimation status detecting unit configured to detect a progress or an end point of sublimation removal of the sublimating material.

Abstract: In one embodiment, a substrate treatment method includes cleaning and rinsing a surface of a substrate provided with a pattern, and supplying a solidifying agent containing liquid that contains a solidifying agent to the cleaned and rinsed surface of the substrate. The method further includes precipitating the solidifying agent as solid on the surface of the substrate, and decomposing and gasifying the solid to remove the solid from the surface of the substrate. Furthermore the solidifying agent contains an ammonium salt, and the ammonium salt contains an ammonium ion or an ion having a structure in which at least one of four hydrogen atoms of an ammonium ion is substituted with another atom or an atom group.

Abstract: The substrate treatment apparatus includes a first nozzle, a second nozzle, a detector, and a controller. The first nozzle supplies an organic sublimable material-containing liquid capable of displacing a rinsing liquid, to a surface of a substrate treated with the rinsing liquid. The second nozzle supplies vapor of a solvent in which the organic sublimable material is capable of dissolving, to the surface of the substrate. The detector detects a first physical amount of the vapor on the surface of the substrate. The controller controls a second physical amount of the vapor according to the first physical amount.

Abstract: According to one embodiment, a processing apparatus includes a first supply section, a second supply section, a gas supply section, and a sublimation section. The first supply section supplies a first fluid on surfaces of a plurality of workpieces. The second supply section supplies a fluid containing a sublimable material on the surfaces of the plurality of workpieces to which the first fluid is supplied. The gas supply section supplies gas on the surfaces of the plurality of workpieces to which a fluid containing the sublimable material is supplied. The sublimation section sublimates a layer containing the sublimable material formed on each surface of the plurality of workpieces. The gas supply section controls a thickness of the layer containing the sublimable material formed each surface of the plurality of workpieces by controlling a flow velocity of the gas in each surface of the plurality of workpieces.

Abstract: A substrate treatment apparatus includes a processing chamber configured to be capable of storing a substrate; a substrate holder disposed in the processing chamber and configured to be capable of holding the substrate; a sublimation removing unit configured to remove, by sublimation, a sublimating material filled between structures formed on a surface of a substrate held by the substrate holder, and a sublimation status detecting unit configured to detect a progress or an end point of sublimation removal of the sublimating material.

Abstract: An image holding member for an image forming apparatus includes a support and a photosensitive layer disposed on the support. The photosensitive layer contains a charge generating material and a compound represented by the following formula (II-1): wherein in the formula (II-1), Y1's each independently represent a substituted or unsubstituted divalent hydrocarbon group; A1 represents a group represented by formula (II-2); R2's each independently represent a hydrogen atom, an alkyl group, a substituted or unsubstituted aryl group, or a substituted or unsubstituted aralkyl group; m's each independently represent an integer of from 1 to 5; and p represents an integer of from 5 to 5,000.

Abstract: According to one embodiment, a substrate processing apparatus includes a first processor and a second processor. The first processor causes an amount of a solvent at a front surface of a substrate to decrease after supplying a first liquid to the front surface. The first liquid includes the solvent and a substance. The substance is transformable from a solid phase to a vapor phase. An unevenness pattern is provided in the front surface. The second processor includes a first processing chamber. The first processing chamber contains the substrate having the decreased amount of the solvent at the front surface. The first processing chamber removes the substance by causing at least a portion of the substance at the front surface to transform from the solid phase to the vapor phase by heating the substrate in a state in which an interior of the first processing chamber is depressurized.

Abstract: A method of manufacturing a semiconductor device including attaching, by a liquid treatment, a first liquid to a surface of a semiconductor substrate having a fine pattern formed therein; substituting the first liquid attached to the surface of the semiconductor substrate with a solution, the solution comprising a sublimate dissolved in a second liquid; vaporizing the second liquid and precipitating the sublimate to the surface of the semiconductor substrate to form a solid precipitate comprising the sublimate; and removing the precipitate by sublimation. For example, the sublimate may be a material having at least two carboxyl groups bonded to cyclohexane or a material formed of two carboxyl groups bonded to benzene with the bonding sites of the two carboxyl groups being adjacent to one another.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device is provided. The element isolation insulating bodies form active areas extending in one direction along a surface of a semiconductor substrate in a surface region of the semiconductor substrate, and partition the surface region into the active areas. The tunnel insulating films are formed on the active areas respectively. The floating gate electrodes are formed on the tunnel insulating films respectively. The inter-gate insulating films are formed on the floating gate electrodes. The control gate electrodes are provided on the inter-gate insulating films. The source regions and drain regions are formed in the active areas respectively. Each of the active areas has steps at side surfaces. A width of a portion of each of the active areas deeper than the steps is larger than that of a portion of each of the active areas shallower than the steps.

Abstract: Provided is an organic electroluminescent element which includes a pair of electrodes composed of a positive electrode and a negative electrode, with at least one of the electrodes being transparent or semi-transparent, and an organic compound layer interposed between the pair of electrodes and containing one or more charge transporting polyesters represented by the following formula (I) [in the formula (I), A1 represents at least one selected from structures represented by the following formula (II); and in the formula (II), X represents a group represented by the following formula (III)]: