Abstract: A positive resist composition for electron beam, X-ray or EUV exposure, including (A) a resin capable of decomposing by the action of an acid to increase the solubility in an alkali developer; and (B) a compound capable of generating a sulfonic acid upon irradiation with an actinic ray or radiation, wherein the resin (A) is a resin having a phenolic hydroxyl group and having a weight average molecular weight of 1,500 to 3,500, the positive resist composition has a property of decomposing by the action of an acid and causing the dissolution rate in an aqueous 2.38 wt % tetramethylammonium hydroxide solution at 23° C. under normal pressure to increase in a range of 200 to 5,000 times, and the positive resist composition has a solid content concentration of from 2.5 to 4.5 mass %.

Abstract: A layout method of a semiconductor integrated circuit includes five steps. The first step is of extracting a wiring crowding place where wiring lines are crowded as compared with a predetermined condition, after carrying out a routing in a region where a placement of circuit elements is carried out. The second step is of generating routing prohibition regions where a routing is prohibited in an area including the wiring crowding place. The third step is of carrying out a routing by bypassing the routing prohibition regions. The fourth step is of deleting the routing prohibition regions. The fifth step is of carrying out a re-routing. The generating step includes: calculating a size and an interval of the routing prohibition regions based on a rate for generating a routing prohibition region in the area in each wiring layer, and generating the routing prohibition regions in the area on the basis of the calculating result.

Abstract: Provided are a radiation-sensitive composition including a compound (P) having a partial structure (A) having an ionic structural site and capable of decomposing upon irradiation with an actinic ray or radiation to generate an acid and a partial structure (B) having at least one phenolic hydroxyl group, a part or all of hydrogen atoms of the hydroxyl group or groups each being protected by a group capable of leaving by the action of an acid, wherein the ionic structural site of the partial structure (A) contained in the compound (P) is a structure capable of generating an acid anion in the compound (P) upon irradiation with an actinic ray or radiation; a pattern-forming method using the same; and a resin which is used in the composition.

Abstract: A metal-polishing composition includes colloidal silica particles, which has a ratio of minor axis/major axis of 0.2 to 0.8 and a surface at least partially covered with aluminum atoms, comprises in an amount of 50% or more with respect to total abrasives. The metal-polishing composition preferably includes an oxidizing agent, an organic acid or the like. The colloidal silica constituting the colloidal silica particles is preferably formed by hydrolysis of alkoxysilane. The major axis of the colloidal silica particles is preferably in a range of 20 nm to 100 nm.

Abstract: A sealed lamp device may include a discharge lamp burner; a concave mirror opened to a front direction and reflecting radiation light of the discharge lamp burner to the opened side, an optical axis of the concave mirror being aligned with an optical axis of the discharge lamp burner; a hollow casing structure having an opening section in a front side, to which the concave mirror opened out; and a front plate closing the opening section of the hollow casing structure and emitting the radiation light. The hollow casing structure may be made wider than an opening width of the concave mirror, so as to increase a sealed volume occupied by the discharge lamp burner.

Abstract: The invention provides a metal polishing liquid comprising an oxidizing agent and colloidal silica in which a part of a surface of the colloidal silica is covered with aluminum atoms, and a Chemical Mechanical Polishing method using the same. An amino acid, a compound having an isothiazoline-3-one skeleton, an organic acid, a passivated film forming agent, a cationic surfactant, a nonionic surfactant, and a water-soluble polymer may be contained. A metal polishing liquid which is used in Chemical Mechanical Polishing in manufacturing of a semiconductor device, attains low dishing of a subject to be polished, and can perform polishing excellent in in-plane uniformity of a surface to be polished.

Abstract: A positive resist composition for electron beam, X-ray or EUV includes a compound having a proton acceptor functional group and capable of producing an acid radical upon irradiation with an actinic ray or radiation to reduce or lose the acceptor property or to change the proton acceptor functional group to be acidic, wherein the positive resist composition has a solid content concentration of from 2.5 to 4.5 mass %.

Abstract: Provided is a actinic ray-sensitive or radiation-sensitive resin composition including (P) a resin containing (A) a repeating unit having an ionic structure moiety that contains a cation represented by formula (Ia) and is capable of producing an acid anion on the side chain upon irradiation with an actinic ray or radiation: wherein each of R1a to R13a independently represents a hydrogen atom or a monovalent substituent and may combine together to form a ring, and Z represents a single bond or a divalent linking group.

Abstract: A method for processing an organic solvent-containing air is disclosed. The method can be operated in spite of a rapid fluctuation of the concentration of the organic solvents in the air to be processed, specifically, the method does not increase the organic solvent content in the air to be emitted into the atmosphere after processing, even if the concentration of the organic solvents rapidly changes. The method comprises carrying out simultaneously and continuously an adsorbing-removing step, a regenerating step, and a combustion step, while mixing a purified air produced in the adsorbing-removing step with an exhaust gas from a combustion furnace produced in the combustion step, and decomposing the organic solvents in the mixture by oxidation.

Abstract: Provided is a positive resist composition for an electron beam, an X-ray or EUV, including: (A) a resin capable of decomposing by the action of an acid to increase the dissolution rate in an aqueous alkali solution; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, represented by the following formula (ZI) or (ZII); (C) a basic compound; and (D) an organic solvent, wherein a concentration of all solid contents in said composition is from 1.0 to 4.5 mass %, and a total amount of the compound represented by formula (ZI) or (ZII) is 12 mass % or more based on all solid contents in said composition: wherein symbols in the formulae are defined in the specification.

Abstract: A method for processing an organic solvent-containing air capable of being operated in spite of a rapid fluctuation of the concentration of organic solvents in the air to be processed and capable of using a combustion furnace exhaust gas as an air for regenerating dehumidifying member is provided. The method comprises carrying out simultaneously and continuously a dehumidification step (a), an adsorption-removing step (b), an adsorbing member-regeneration step (c), a combustion step (d), and a dehumidifying member-regeneration step (e) comprising mixing the adsorption-treated air produced in the adsorbing-removing step (b) with a combustion furnace exhaust gas produced in the combustion step (d) to obtain a mixed gas, decomposing the organic solvents in the mixed gas by oxidation, and causing the resulting purified gas to flow through the dehumidifying member which has adsorbed moisture, thereby regenerating the dehumidifying member.

Abstract: A positive resist composition for use with electron beam, X-ray or EUV and a pattern forming method using the positive resist composition are provided, the positive resist composition including: (A) a resin capable of decomposing under an action of an acid to increase a dissolution rate in an aqueous alkali solution; (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (C) a basic compound; and (D) an organic solvent, wherein the entire solid content concentration in the resist composition is from 1.0 to 4.5 mass % and a ratio of (B) the compound capable of generating an acid upon irradiation with actinic rays or radiation is from 10 to 50 mass % based on the entire solid content.

Abstract: A metal polishing composition comprising at least one of the compound represented by formula (1) defined herein and the compound represented by formula (2) defined herein, and an oxidizing agent, and a chemical mechanical polishing method comprising bringing the metal polishing composition into contact with a surface to be polished and providing a relative movement between the surface to be polished and a polishing surface.

Abstract: A positive resist composition for electron beam, X-ray or EUV includes a compound having a proton acceptor functional group and capable of producing an acid radical upon irradiation with an actinic ray or radiation to reduce or lose the acceptor property or to change the proton acceptor functional group to be acidic, wherein the positive resist composition has a solid content concentration of from 2.5 to 4.5 mass %.

Abstract: A positive resist composition for electron beam, X-ray or EUV exposure, including (A) a resin capable of decomposing by the action of an acid to increase the solubility in an alkali developer; and (B) a compound capable of generating a sulfonic acid upon irradiation with an actinic ray or radiation, wherein the resin (A) is a resin having a phenolic hydroxyl group and having a weight average molecular weight of 1,500 to 3,500, the positive resist composition has a property of decomposing by the action of an acid and causing the dissolution rate in an aqueous 2.38 wt % tetramethylammonium hydroxide solution at 23° C. under normal pressure to increase in a range of 200 to 5,000 times, and the positive resist composition has a solid content concentration of from 2.5 to 4.5 mass %.

Abstract: A positive resist composition for electron beam, X-ray or EUV includes (A) a compound represented by the following formula (I), and (B) a resin capable of decomposing by the action of an acid to increase solubility in an alkali developing solution, which includes a repeating unit represented by the following formula (II) and a repeating unit represented by the following formula (III):

Abstract: Disclosed herein is a lamp cooling device for cooling a lamp including a light emission source for emitting light, a front transparent plate, a reflector for reflecting light emitted by the light emission source toward the front transparent plate, the light emission source being disposed in an intralamp space surrounded by the front transparent plate and the reflector, said lamp cooling device including: a duct having joint ports defined in respective opposite ends thereof and communicating with said intralamp space, said duct having a continuously extending portion between said opposite ends which is disposed in a space outside of said intralamp space, for circulating a gas through said duct and said intralamp space in isolated relation to the space outside of said intralamp space.

Abstract: A sealed lamp device may include a discharge lamp burner; a concave mirror opened to a front direction and reflecting radiation light of the discharge lamp burner to the opened side, an optical axis of the concave mirror being aligned with an optical axis of the discharge lamp burner; a hollow casing structure having an opening section in a front side, to which the concave mirror opened out; and a front plate closing the opening section of the hollow casing structure and emitting the radiation light. The hollow casing structure may be made wider than an opening width of the concave mirror, so as to increase a sealed volume occupied by the discharge lamp burner.

Abstract: A sliding surface (2) of a valve lifter (1) or a shim (3) is subjected to a gaseous nitriding to have a surface hardness of Hv 660 or higher and a thickness of a compound layer (6) of 1 to 5 ?m. The nitrided layer on the surface is a dense compound layer (6) with a porosity of 5% or less.

Abstract: A metal-polishing composition includes colloidal silica particles, which has a ratio of minor axis/major axis of 0.2 to 0.8 and a surface at least partially covered with aluminum atoms, comprises in an amount of 50% or more with respect to total abrasives. The metal-polishing composition preferably includes an oxidizing agent, an organic acid or the like. The colloidal silica constituting the colloidal silica particles is preferably formed by hydrolysis of alkoxysilane. The major axis of the colloidal silica particles is preferably in a range of 20 nm to 100 nm.