Patents by Inventor Katsuko Yamamoto

Katsuko Yamamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10829379
    Abstract: Nano polycrystalline diamond is composed of carbon, an element of different type which is an element other than carbon and is added to be dispersed in carbon at an atomic level, and an inevitable impurity. The polycrystalline diamond has a crystal grain size not greater than 500 nm. The polycrystalline diamond can be fabricated by subjecting graphite in which the element of different type which is an element other than carbon has been added to be dispersed in carbon at an atomic level to heat treatment within high-pressure press equipment.
    Type: Grant
    Filed: May 15, 2018
    Date of Patent: November 10, 2020
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Kazuhiro Ikeda, Keiko Arimoto, Katsuko Yamamoto, Hitoshi Sumiya, Takeshi Sato
  • Publication number: 20200340140
    Abstract: In a diamond polycrystal, a value of a ratio (a?/a) of a? to a is less than or equal to 0.99 in a Knoop hardness test performed under a condition defined in JIS Z 2251:2009, where the a represents a length of a longer diagonal line of a first Knoop indentation formed in a surface of the diamond polycrystal when a Knoop indenter with a test load of 4.9 N is pressed onto the surface of the diamond polycrystal, and the a? represents a length of a longer diagonal line of a second Knoop indentation remaining in the surface of the diamond polycrystal after releasing the test load.
    Type: Application
    Filed: July 20, 2018
    Publication date: October 29, 2020
    Inventors: Hitoshi SUMIYA, Katsuko YAMAMOTO
  • Publication number: 20200340139
    Abstract: In a diamond polycrystal, a value of a ratio (d?/d) of d? to d is less than or equal to 0.98 in a Vickers hardness test performed under a condition defined in JIS Z 2244:2009, where the d represents a length of a diagonal line of a first Vickers indentation formed in a surface of the diamond polycrystal when a Vickers indenter with a test load of 4.9 N is pressed onto the surface of the diamond polycrystal, and the d? represents a length of a diagonal line of a second Vickers indentation remaining in the surface of the diamond polycrystal after releasing the test load.
    Type: Application
    Filed: July 20, 2018
    Publication date: October 29, 2020
    Inventors: Hitoshi SUMIYA, Katsuko YAMAMOTO
  • Publication number: 20200325596
    Abstract: A synthetic single crystal diamond contains nitrogen atoms at a concentration of more than 600 ppm and 1500 ppm or less, and the nitrogen atoms do not include any isolated substitutional nitrogen atom.
    Type: Application
    Filed: August 29, 2018
    Publication date: October 15, 2020
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Hitoshi SUMIYA, Kensei HAMAKI, Minori TERAMOTO, Katsuko YAMAMOTO
  • Publication number: 20200290881
    Abstract: A diamond polycrystal is a diamond polycrystal basically composed of a diamond single phase, wherein the diamond polycrystal is composed of a plurality of diamond grains having an average grain size of less than or equal to 30 nm, and the diamond polycrystal has a carbon dangling bond density of more than or equal to 10 ppm.
    Type: Application
    Filed: November 13, 2018
    Publication date: September 17, 2020
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Hitoshi SUMIYA, Yuh ISHIDA, Kensei HAMAKI, Katsuko YAMAMOTO
  • Publication number: 20200283927
    Abstract: Provided is a synthetic single crystal diamond containing nitrogen atoms at a concentration of more than 600 ppm and 1500 ppm or less. The Raman shift ?? (cm?1) of a peak in a primary Raman scattering spectrum of the synthetic single crystal diamond and the Raman shift ? (cm?1) of a peak in a primary Raman scattering spectrum of a synthetic type IIa single crystal diamond containing nitrogen atoms at a content of 1 ppm or less satisfy the following expression (1): ??????0.10??(1).
    Type: Application
    Filed: August 2, 2018
    Publication date: September 10, 2020
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Hitoshi SUMIYA, Kensei HAMAKI, Minori TERAMOTO, Katsuko YAMAMOTO
  • Publication number: 20200062601
    Abstract: Provided is polycrystalline diamond having a diamond single phase as basic composition, in which the polycrystalline diamond includes a plurality of crystal grains and contains boron, at least either of nitrogen and silicon, and a remainder including carbon and trace impurities; the boron is dispersed in the crystal grains at an atomic level, and greater than or equal to 90 atomic % of the boron is present in an isolated substitutional type; the nitrogen and the silicon are present in an isolated substitutional type or an interstitial type in the crystal grains; each of the crystal grains has a grain size of less than or equal to 500 nm; and the polycrystalline diamond has a surface covered with a protective film.
    Type: Application
    Filed: November 29, 2017
    Publication date: February 27, 2020
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Kazuhiro IKEDA, Keiko ARIMOTO, Katsuko YAMAMOTO, Hitoshi SUMIYA
  • Patent number: 10562822
    Abstract: It is an object to provide a cubic boron nitride polycrystalline material excellent in toughness. A cubic boron nitride polycrystalline material containing fine cubic boron nitride which is granular, has a maximum grain size not greater than 100 nm, and has an average grain size not greater than 70 nm and at least one of plate-shaped cubic boron nitride in a form of a plate having an average major radius not smaller than 50 nm and not greater than 10000 nm and coarse cubic boron nitride which is granular, has a minimum grain size exceeding 100 nm, and has an average grain size not greater than 1000 nm is provided.
    Type: Grant
    Filed: January 13, 2016
    Date of Patent: February 18, 2020
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Yuh Ishida, Katsuko Yamamoto, Hitoshi Sumiya
  • Patent number: 10562776
    Abstract: The present diamond single crystal is a diamond single crystal containing nitrogen atoms, in which a concentration of the nitrogen atoms changes periodically along a crystal orientation of the diamond single crystal, and an arithmetic average value Aave, a maximum value Amax, and a minimum value Amin of the distance of one period along the crystal orientation satisfy the relationship expressed by the following equation (I): (Amax)/1.25?(Aave)?(Amin)/0.75??(I).
    Type: Grant
    Filed: June 1, 2016
    Date of Patent: February 18, 2020
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Katsuko Yamamoto, Keiko Arimoto, Hitoshi Sumiya
  • Patent number: 10519068
    Abstract: A cubic boron nitride polycrystal includes cubic boron nitride, the cubic boron nitride having an average grain size of not more than 150 nm, the cubic boron nitride polycrystal having a crack generation load of not less than 25 N in a breaking strength test in which an R200 ?m diamond indenter is used to apply a load at a rate of 100 N/min.
    Type: Grant
    Filed: January 18, 2016
    Date of Patent: December 31, 2019
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Yuh Ishida, Keiko Arimoto, Katsuko Yamamoto, Hitoshi Sumiya
  • Publication number: 20190300439
    Abstract: Provided is polycrystalline diamond having a diamond single phase as basic composition, in which the polycrystalline diamond includes a plurality of crystal grains and contains boron, hydrogen, oxygen, and the remainder including carbon and trace impurities; the boron is dispersed in the crystal grains at an atomic level, and greater than or equal to 90 atomic % of the boron is present in an isolated substitutional type; hydrogen and oxygen are present in an isolated substitutional type or an interstitial type in the crystal grains; each of the crystal grains has a grain size of less than or equal to 500 nm; and the polycrystalline diamond has a surface covered with a protective film.
    Type: Application
    Filed: November 29, 2017
    Publication date: October 3, 2019
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Kazuhiro IKEDA, Keiko ARIMOTO, Katsuko YAMAMOTO, Hitoshi SUMIYA
  • Publication number: 20190293536
    Abstract: An indenter is made of polycrystalline diamond and has a tip having a spherical surface with a radius of 10 to 2000 ?m.
    Type: Application
    Filed: March 29, 2018
    Publication date: September 26, 2019
    Inventors: Kensei Hamaki, Katsuko Yamamoto, Hitoshi Sumiya, Yuh Ishida
  • Patent number: 10421129
    Abstract: A polycrystalline diamond body contains diamond particles, the diamond particles have a mean particle size of 50 nm or less, and a crack initiation load is 10 N or more as measured in a fracture strength test by pressing a diamond indenter D with a tip radius Dr of 50 ?m against a surface of the polycrystalline diamond body at a load rate F of 100 N/min. Accordingly, a polycrystalline diamond body that is tough and has a small diamond particle size, a cutting tool, a wear-resistant tool, a grinding tool, and a method for producing the polycrystalline diamond body are provided.
    Type: Grant
    Filed: January 20, 2016
    Date of Patent: September 24, 2019
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Yuh Ishida, Keiko Arimoto, Katsuko Yamamoto, Hitoshi Sumiya
  • Publication number: 20180265416
    Abstract: It is an object to provide a cubic boron nitride polycrystalline material excellent in toughness. A cubic boron nitride polycrystalline material containing fine cubic boron nitride which is granular, has a maximum grain size not greater than 100 nm, and has an average grain size not greater than 70 nm and at least one of plate-shaped cubic boron nitride in a form of a plate having an average major radius not smaller than 50 nm and not greater than 10000 nm and coarse cubic boron nitride which is granular, has a minimum grain size exceeding 100 nm, and has an average grain size not greater than 1000 nm is provided.
    Type: Application
    Filed: January 13, 2016
    Publication date: September 20, 2018
    Inventors: Yuh Ishida, Katsuko Yamamoto, Hitoshi Sumiya
  • Publication number: 20180257992
    Abstract: Nano polycrystalline diamond is composed of carbon, an element of different type which is an element other than carbon and is added to be dispersed in carbon at an atomic level, and an inevitable impurity. The polycrystalline diamond has a crystal grain size not greater than 500 nm. The polycrystalline diamond can be fabricated by subjecting graphite in which the element of different type which is an element other than carbon has been added to be dispersed in carbon at an atomic level to heat treatment within high-pressure press equipment.
    Type: Application
    Filed: May 15, 2018
    Publication date: September 13, 2018
    Inventors: Kazuhiro Ikeda, Keiko Arimoto, Katsuko Yamamoto, Hitoshi Sumiya, Takeshi Sato
  • Publication number: 20180141818
    Abstract: The present diamond single crystal is a diamond single crystal containing nitrogen atoms, in which a concentration of the nitrogen atoms changes periodically along a crystal orientation of the diamond single crystal, and an arithmetic average value Aave, a maximum value Amax, and a minimum value Amin of the distance of one period along the crystal orientation satisfy the relationship expressed by the following equation (I): (Amax)/1.25?(Aave)?(Amin)/0.75??(I).
    Type: Application
    Filed: June 1, 2016
    Publication date: May 24, 2018
    Inventors: Katsuko Yamamoto, Keiko Arimoto, Hitoshi Sumiya
  • Publication number: 20180079010
    Abstract: A polycrystalline diamond body contains diamond particles, the diamond particles have a mean particle size of 50 nm or less, and a crack initiation load is 10 N or more as measured in a fracture strength test by pressing a diamond indenter D with a tip radius Dr of 50 ?m against a surface of the polycrystalline diamond body at a load rate F of 100 N/min. Accordingly, a polycrystalline diamond body that is tough and has a small diamond particle size, a cutting tool, a wear-resistant tool, a grinding tool, and a method for producing the polycrystalline diamond body are provided.
    Type: Application
    Filed: January 20, 2016
    Publication date: March 22, 2018
    Inventors: Yuh Ishida, Keiko Arimoto, Katsuko Yamamoto, Hitoshi Sumiya
  • Publication number: 20180029942
    Abstract: A cubic boron nitride polycrystal includes cubic boron nitride, the cubic boron nitride having an average grain size of not more than 150 nm, the cubic boron nitride polycrystal having a crack generation load of not less than 25 N in a breaking strength test in which an R200 ?m diamond indenter is used to apply a load at a rate of 100 N/min.
    Type: Application
    Filed: January 18, 2016
    Publication date: February 1, 2018
    Inventors: Yuh Ishida, Keiko Arimoto, Katsuko Yamamoto, Hitoshi Sumiya
  • Patent number: 9878914
    Abstract: Nano polycrystalline diamond is composed of carbon and a plurality of impurities other than carbon. A concentration of each of the plurality of impurities is not higher than 0.01 mass %, and the nano polycrystalline diamond has a crystal grain size (a maximum length) not greater than 500 nm. The nano polycrystalline diamond can be fabricated by preparing graphite in which a concentration of an impurity is not higher than 0.01 mass % and converting graphite to diamond by applying an ultra-high pressure and a high temperature to graphite.
    Type: Grant
    Filed: April 18, 2016
    Date of Patent: January 30, 2018
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Kazuhiro Ikeda, Katsuko Yamamoto, Hitoshi Sumiya
  • Patent number: 9878956
    Abstract: Nano polycrystalline diamond is composed of carbon, an element of different type which is an element other than carbon and is added to be dispersed in carbon at an atomic level, and an inevitable impurity. The polycrystalline diamond has a crystal grain size not greater than 500 nm. The polycrystalline diamond can be fabricated by subjecting graphite in which the element of different type which is an element other than carbon has been added to be dispersed in carbon at an atomic level to heat treatment within high-pressure press equipment.
    Type: Grant
    Filed: May 27, 2016
    Date of Patent: January 30, 2018
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Kazuhiro Ikeda, Keiko Arimoto, Katsuko Yamamoto, Hitoshi Sumiya, Takeshi Sato