Abstract: A fault detection system detecting malfunctions or deteriorations, which may result in an inverter fault, is provided. The system has a temperature sensor installed on a semiconductor module to monitor a temperature rise rate. It is judged that an abnormal condition has occurred if the thermal resistance is increased by the deterioration of a soldering layer of the semiconductor module or by drive circuit malfunctions and, as a result, the relation between an operation mode and the temperature rise rate falls outside a predetermined range.

Abstract: A fault detection system detecting malfunctions or deteriorations, which may result in an inverter fault, is provided. The system has a temperature sensor installed on a semiconductor module to monitor a temperature rise rate. It is judged that an abnormal condition has occurred if the thermal resistance is increased by the deterioration of a soldering layer of the semiconductor module or by drive circuit malfunctions and, as a result, the relation between an operation mode and the temperature rise rate falls outside a predetermined range.

Abstract: A fault detection system detecting malfunctions or deteriorations, which may result in an inverter fault, is provided. The system has a temperature sensor installed on a semiconductor module to monitor a temperature rise rate. It is judged that an abnormal condition has occurred if the thermal resistance is increased by the deterioration of a soldering layer of the semiconductor module or by drive circuit malfunctions and, as a result, the relation between an operation mode and the temperature rise rate falls outside a predetermined range.

Abstract: An airbag includes a first cloth with a gas introduction port; a second cloth superimposed on the first cloth, wherein the first and second cloths cooperate to define an airbag compartment; a third cloth interposed between the first and second cloths to cover the gas introduction port; a plurality of junctions for joining the first and third cloths together; an exhaust hole arranged in one of the junctions for communication with the outside of the airbag; and a band having one end connected to the third cloth and another end connected to the second cloth.

Abstract: A fault detection system detecting malfunctions or deteriorations, which may result in an inverter fault, is provided. The system has a temperature sensor installed on a semiconductor module to monitor a temperature rise rate. It is judged that an abnormal condition has occurred if the thermal resistance is increased by the deterioration of a soldering layer of the semiconductor module or by drive circuit malfunctions and, as a result, the relation between an operation mode and the temperature rise rate falls outside a predetermined range.

Abstract: A fault detection system detecting malfunctions or deteriorations, which may result in an inverter fault, is provided. The system has a temperature sensor installed on a semiconductor module to monitor a temperature rise rate. It is judged that an abnormal condition had occurred if the thermal resistance is increased by the deterioration of a soldering layer of the semiconductor module or by drive circuit malfunctions and, as a result, the relation between an operation mode and the temperature rise rate falls outside a predetermined range.

Abstract: An airbag includes a first cloth with a gas introduction port; a second cloth superimposed on the first cloth, wherein the first and second cloths cooperate to define an airbag compartment; a third cloth interposed between the first and second cloths to cover the gas introduction port; a plurality of junctions for joining the first and third cloths together; an exhaust hole arranged in one of the junctions for communication with the outside of the airbag; and a band having one end connected to the third cloth and another end connected to the second cloth.

Abstract: In a semiconductor device, such as a diode and thyristor, having at least one pn junction between a pair of main surfaces, a first main electrode formed on the surface of one of the main surfaces and a second main electrode formed on the surface of the other one of the main surfaces, a semiconductor lattice defect is formed such that its lattice defect density increases gradually in the direction from the first main electrode to the second main electrode. Since the distribution of the carrier density in the conduction state can be flattened, the reverse recovery charge can be reduced substantially without causing the ON-state voltage to increase.

Abstract: An air bag apparatus is provided which stably projects the air bag towards the front of a passenger. A retainer 12 stores therein an inflator 14 for injecting gas from gas injection holes at one end of the inflator, and an air bag 15 which is folded. A mid-retainer 16 is provided between inflator 14 and air bag 15. Mid-retainer 16 is provided with a plurality of guide fins 61, which are formed by making cuts in the mid-retainer and bending the cut portions. The direction of gas flow is adjusted by the inclination of each guide fin 61. The gas discharge rate is adjusted by setting various distances between each two adjacent guide fins 61 as to be greatest at the central part of the mid-retainer and either side of the center portion having a gas discharge rate approximately equal to its corresponding opposite side, thereby ensuring air bag 15 will be projected stably.

Abstract: A circuit for generating a dc high voltage supplied to an anode of a cathode-ray tube, having a simplified circuit structure and reduced size. A first horizontal deflection circuit applies a first flyback pulse across the primary coil of a flyback transformer, while a second horizontal deflection circuit supplies a second flyback pulse to a lower voltage side of the secondary coil of the flyback transformer through a coupling capacitor. A dc voltage supplied to the second horizontal deflection circuit is controlled in response to the output voltage of the secondary coil of the flyback transformer. A current detection circuit for automatic brightness limiting is coupled to the lower voltage side of the secondary coil of the flyback transformer for detecting changes in the secondary current of the flyback transformer.

Abstract: A strain gage load converter having a parallelogram shaped beam having strain gages on the top and bottom surfaces of the beam. These gage mounting surfaces are made reentrant concave shaped in order to eliminate occurrence of measurement loss due to lateral shift of load point against the main axis of the beam.

Abstract: A Schmitt trigger circuit including transistors Q12 and Q13 having a common emitter resistor R3 is thermally coupled to a power amplifier A in a monolithic IC chip, and the base of Q12 is biased at a cutoff potential under normal operating conditions. When the temperature rises to a first predetermined level V.sub.BE of Q12 drops below its biasing potential owing to the temperature characteristic of Q12, whereby Q12 conducts, which cuts off Q13 and, through transistor Q14, disables the amplifier. The common emitter feedback provides a thermal hysteresis characteristic, whereby Q12 is not cut off again until the temperature drops below a second predetermined level.