Abstract: A photovoltaic device comprises a photovoltaic layer, a transparent electrode layer provided on the photovoltaic layer in close contact, and a transparent protective layer further provided in contact therewith, wherein the transparent electrode layer comprises Zn.sub.2 In.sub.2 O.sub.5. This photovoltaic device can prevent reflection of light and improves conversion efficiency.

Abstract: A process for stably producing a zinc oxide thin film by electrolysis with excellent adhesion to a substrate is described. In particular, a zinc oxide thin film suitably used as a light confining layer of a photoelectric conversion element is formed on a conductive substrate by applying a current between a conductive substrate immersed in an aqueous solution containing at least nitrate ions, zinc ions, and a carbohydrate, and an electrode immersed in the solution.

Abstract: A method for manufacturing a photovoltaic device comprising a metal layer, a first transparent conductive layer, a semiconductor layer, and a second transparent conductive layer sequentially stacked on a substrate comprising iron, comprises the steps of forming the metal layer by electro-deposition of the metal layer from a solution and forming the first transparent conductive layer by electro-deposition of the first transparent conductive layer from a solution.

Abstract: Disclosed is a process for fabricating an array of photovoltaic elements connected in series, which can be used as a high-efficiency solar battery, at low cost and with high reliability. The process for fabricating the array of photovoltaic elements connected in series is characterized in that a step (.alpha.) for forming insulating strips of second electrode material is carried out by immersing in a solution a substrate having a first electrode thereon, and on which the second electrode is deposited, and an opposed electrode of a concentrated electric field type positioned opposite the surface of the second electrode in the vicinity thereof and applying a voltage between the first electrode and the opposed electrode. Further, it is characterized in that a step (.beta.

Abstract: A photovoltaic device, such as a solar cell, of improved photoelectric conversion efficiency and improved reliability is provided with a metal layer, a transparent layer formed on the metal layer, and a semiconductor layer formed n the transparent layer and capable of photoelectric conversion. The metal layer is composed of aluminum containing silicon, copper, zinc and/or manganese, or of copper containing silicon, aluminum, zinc, tin and/or beryllium.

Abstract: An electrophotographic apparatus employs a charger for charging a cylindrical photosensitive member having a photoconductive layer of amorphous silicon containing 10 to 40 atomic % hydrogen; an exposing station for imagewise exposing the member to form an electrostatic latent image; a developer station for developing the latent image to form a toner image; a transfer station for transferring the toner image to an image receiving sheet and a blade for cleaning the surface of the cylindrical member.

Abstract: An image-forming member for electro-photography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.

Abstract: A microwave plasma CVD method for continuously forming a large area and length functional deposited film, the method comprises: continuously moving a substrate web in the longitudinal direction by paying out it by a pay-out mechanism and taking up it by a take-up mechanism; establishing a substantially enclosed film-forming chamber by curving and projecting said moving substrate web to form a columnar portion to be the circumferential wall of said film forming chamber on the way moving from said pay-out mechanism toward said take-up mechanism; introducing a film-forming raw material gas through a gas feed means into said film-forming chamber; at the same time, radiating a microwave energy in said film-forming chamber by using a microwave applicator means, which is so designed that it can radiate a microwave energy in the direction parallel to the microwave propagating direction, to generate microwave plasma in said film-forming chamber, whereby continuously forming a deposited film on the inner wall face of s

Abstract: A method of making a semiconductor body includes the steps of preparing a sheet-like substrate having an insulating film and holes which pass through the insulating film, the holes being disposed at a uniform density, preparing a solution in which a semiconductor material is dissolved, and conveying the sheet-like substrate along a surface of the solution so as to grow a single crystal nucleus from each of the holes and thereby form a set of single crystal semiconductors on the sheet-like substrate. A solar cell can be manufactured by forming a semiconductor active area on the sheet-like support member made of a conductive material by a process containing the above-described semiconductor body forming method, and then by forming an electrode which makes a pair with the sheet-like support member.

Abstract: A layer of amorphous silicon containing H, preferably 10-40 atomic % H, is used as a photoconductive layer for electrophotographic photosensitive member.

Abstract: An electrophotographic process is conducted by charging a cylindrical photosensitive member having a photoconductive layer of amorphous silicon containing 10 to 40 atomic % hydrogen; imagewise exposing the member to form an electrostatic latent image; developing the latent image to form a toner image; transferring the toner image to an image receiving sheet and thereafter cleaning the surface of the cylindrical member with a cleaning blade.

Abstract: A photoelectric conversion device having a photoelectric conversion section and a transistor for transferring or amplification of the photoelectric conversion signal or an accumulating section of a photo carrier. The photoelectric conversion section and the transistor or the accumulating section have common semiconductor layer.

Abstract: A photovoltaic device comprises a metal with a smooth surface; a transparent conductive layer formed on the smooth surface; and a photoelectric conversion layer formed on the transparent conductive layer. The transparent conductive layer has an irregular surface at a side opposite to the smooth surface.

Abstract: A layer of amorphous silicon containing H, preferably 10-40 atomic % H, which is used as a photoconductive layer for electrophotographic photosensitive member, is formed by plasma CVD using a silane gas of a higher than monosilane.

Abstract: A CVD process of forming a hydrogenated amorphous silicon film comprising not more than 40 atomic percent of hydrogen atoms is disclosed, which comprises introducing a silicon-containing gas and a gas containing impurity for controlling conductivity of said film into a film-forming space, wherein the concentration of the gas containing the impurity is controlled during film formation to vary the content of the impurity in the thickness direction of the amorphous silicon film.

Abstract: An image-forming member for electro-photography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.

Abstract: An apparatus for continuously forming a functional deposited film with a large area according to a microwave plasma CVD process is described. The apparatus comprises the elements of a continuous traveling band-shaped member containing a conductive member along its length during which a pillar-shaped film-forming space capable of being kept substantially in vacuum therein is established by the use of the traveling band-shaped member as a side wall for the film-forming space, charging starting gases for film formation through a gas feed means into the film-forming space, and simultaneously radiating a microwave through a microwave antenna in all directions vertical to the direction of movement of the microwave so that microwave power is supplied to the film-forming space to initiate a plasma in the space whereby the film is deposited on the surface of the continuously traveling band-shaped member which constitutes the side wall exposed to the plasma.

Abstract: A method for continuously forming a large area functional deposited film by a microwave plasma CVD process, said method comprises: continuously moving a substrate web in the longitudinal direction; establishing a substantially enclosed film-forming chamber having a film-forming space by curving and projecting said moving substrate web to form a columnar portion to be the circumferential wall of said film forming chamber on the way moving; introducing a film-forming raw material gas through a gas feed means into said film-forming space; at the same time, radiating or propagating microwave energy into said film-forming space by using a microwave applicator means capable of radiating or propagating said microwave energy with a directivity in one direction of microwave energy to propagate to generate microwave plasma in said film-forming space, whereby continuously forming a functional deposited film on the inner face of said continuously moving circumferential wall to be exposed to said microwave plasma.

Abstract: A microwave plasma CVD method for continuously forming a large area and length functional deposited film, the method comprises: continuously moving a substrate web in the longitudinal direction by paying out it by a pay-out mechanism and taking it up by a take-up mechanism; establishing a substantially enclosed film-forming chamber by curving and projecting the moving substrate web to form a columnar portion to be the circumferential wall of the film-forming chamber as the substrate is moving from the pay-out mechanism toward the take-up mechanism; introducing a film-forming raw material gas through a gas feeder into the film-forming chamber; and simultaneously, radiating a microwave energy in the film-forming chamber by using a microwave applicator, which is so designed that it can radiate a microwave energy in the direction parallel to the microwave propagating direction, to generate plasma in the film-forming chamber, thereby continuously forming a deposited film on the inner wall face of the continuously

Abstract: Image-forming member for electrophotography comprising a charge generation layer composed of hydrogenated amorphous silicon.