Abstract: A silicone member used for a micro device and a micro device which achieve both electrification suppression and light transmittance are provided. The silicone member is used as a micro device and has a holding part for holding samples, or defines the holding part through the combination with a counterpart member. The silicone member includes a silicone material which has silicone and an ionic conductive agent, and the content of the ionic conductive agent is 0.01 part by mass or higher and 1 part by mass or lower with respect to 100 parts by mass of the silicone. The micro device includes the silicone member.

Abstract: A fluid device composite member includes: a silicone member that includes a body part which is made of silicone and which has a flow-path-defining section for defining a flow path on one surface of the body part, and that includes barrier layer having hydrophilicity or hydrophobicity disposed in at least a portion of the flow-path-defining section; and a resin substrate disposed on another surface of the body part opposite to the one surface. This method for manufacturing the fluid device composite member includes a layered body manufacturing step in which a liquid silicone material is placed on a surface of the resin substrate, and the liquid silicone material is cured at a temperature of 100° C. or less to obtain a layered body in which a silicone cured product is bonded to the resin substrate.

Abstract: A silicone member used for a micro device and a micro device which achieve both electrification suppression and light transmittance are provided. The silicone member is used as a micro device and has a holding part for holding samples, or defines the holding part through the combination with a counterpart member. The silicone member includes a silicone material which has silicone and an ionic conductive agent, and the content of the ionic conductive agent is 0.01 part by mass or higher and 1 part by mass or lower with respect to 100 parts by mass of the silicone. The micro device includes the silicone member.

Abstract: A fluid device composite member includes: a silicone member that includes a body part which is made of silicone and which has a flow-path-defining section for defining a flow path on one surface of the body part, and that includes barrier layer having hydrophilicity or hydrophobicity disposed in at least a portion of the flow-path-defining section; and a resin substrate disposed on another surface of the body part opposite to the one surface. This method for manufacturing the fluid device composite member includes a layered body manufacturing step in which a liquid silicone material is placed on a surface of the resin substrate, and the liquid silicone material is cured at a temperature of 100° C. or less to obtain a layered body in which a silicone cured product is bonded to the resin substrate.

Abstract: To provide a method for manufacturing a composite member including an aluminum die cast member and a polymer member firmly bonded by removing a carbide film on the surface of the aluminum die cast member to even the surface layer. The method includes: a melting step of melting a surface layer of a joint surface of the aluminum die cast member by irradiating the joint surface with a laser, the joint surface being joined with the polymer member; and a combining step of integrally molding a polymeric material on the joint surface. The method may have a removal step of removing the carbide film present on the joint surface by irradiating the joint surface with the laser before the melting step, and a modification step of irradiating the joint surface with plasma to impart a hydroxyl group to the joint surface after the melting step.

Abstract: A blade member 1 is used for removal of residual toner 5 remaining on a surface of a counterpart member 4 in an image forming device employing an electrophotographic system, by sliding contact with the counterpart member 4. The blade member 1 includes a blade body 11 made of a polyurethane rubber using diphenylmethane diisocyanate and a polyester polyol as main raw materials, and a film 12 that covers at least a surface of a sliding contact portion of the blade body 11 to contact with the counterpart member 4. The polyurethane rubber has an international rubber hardness degree of 65 to 85 IRHD, a tan ? peak temperature of 8° C. or lower, and a tan ? peak value of 1.1 or less. The film 12 contains a hydrocarbon polymer as a main component.

Abstract: A blade member 1 is used for removal of residual toner 5 remaining on a surface of a counterpart member 4 in an image forming device employing an electrophotographic system, by sliding contact with the counterpart member 4. The blade member 1 includes a blade body 11 made of a polyurethane rubber using diphenylmethane diisocyanate and a polyester polyol as main raw materials, and a film 12 that covers at least a surface of a sliding contact portion of the blade body 11 to contact with the counterpart member 4. The polyurethane rubber has an international rubber hardness degree of 65 to 85 IRHD, a tan ? peak temperature of 8° C. or lower, and a tan ? peak value of 1.1 or less. The film 12 contains a hydrocarbon polymer as a main component.

Abstract: In a plasma doping device according to the invention, a vacuum chamber is evacuated with a turbo-molecular pump as an exhaust device via a exhaust port while a predetermined gas is being introduced from a gas supply device in order to maintain the inside of the vacuum chamber to a predetermined pressure with a pressure regulating valve. A high-frequency power of 13.56 MHz is supplied by a high-frequency power source to a coil provided in the vicinity of a dielectric window opposed to a sample electrode to generate inductive-coupling plasma in the vacuum chamber. A high-frequency power source for supplying a high-frequency power to the sample electrode is provided. Uniformity of processing is enhanced by driving a gate shutter and covering a through gate.

Abstract: A plasma doping apparatus which introduces a predetermined mass flow of gas from a gas supply device into a vacuum chamber while discharging the gas through an exhaust port by a turbo-molecular pump, which is an exhaust device in order to maintain the vacuum chamber under a predetermined pressure by a pressure adjusting valve. A high-frequency power source supplies high-frequency power of 13.56 MHz to a coil disposed in the vicinity of a dielectric window opposite a sample electrode in order to generate an inductively coupled plasma in the vacuum chamber. A sum of an area of an opening of a gas flow-off port opposed to a center portion of the sample electrode is configured to be smaller than that of an area of an opening of the gas flow-off port opposed to a peripheral portion of the sample electrode in order to improve the uniformity.

Abstract: First and second gate insulating films are formed so as to cover at least the upper corner of first and second fin-shaped semiconductor regions. The radius of curvature r1? of the upper corner of the first fin-shaped semiconductor region located outside the first gate insulating film is greater than the radius of curvature r1 of the upper corner of the first fin-shaped semiconductor region located under the first gate insulating film and is less than or equal to 2×r1. The radius of curvature r2? of the upper corner of the second fin-shaped semiconductor region located outside the second gate insulating film is greater than the radius of curvature r2 of the upper corner of the second fin-shaped semiconductor region located under the second gate insulating film and is less than or equal to 2×r2.

Abstract: A method for fabricating a semiconductor device includes: forming a fin-type semiconductor region on a substrate; and introducing an n-type impurity into at least a side of the fin-type semiconductor region by a plasma doping process, thereby forming an n-type impurity region in the side of the fin-type semiconductor region. In the introducing the n-type impurity, when a source power in the plasma doping process is denoted by a character Y [W], the supply of a gas containing the n-type impurity per unit time and per unit volume is set greater than or equal to 5.1×10?8/((1.72.51/24.51)×(Y/500)) [mol/(min·L·sec)], and the supply of a diluent gas per unit time and per unit volume is set greater than or equal to 1.7×10?4/((202.51/24.51)×(Y/500)) [mol/(min·L·sec)].

Abstract: In a plasma doping device according to the invention, a vacuum chamber is evacuated with a turbo-molecular pump as an exhaust device via a exhaust port while a predetermined gas is being introduced from a gas supply device in order to maintain the inside of the vacuum chamber to a predetermined pressure with a pressure regulating valve. A high-frequency power of 13.56 MHz is supplied by a high-frequency power source to a coil provided in the vicinity of a dielectric window opposed to a sample electrode to generate inductive-coupling plasma in the vacuum chamber. A high-frequency power source for supplying a high-frequency power to the sample electrode is provided. Uniformity of processing is enhanced by driving a gate shutter and covering a through gate.

Abstract: A semiconductor device includes: a fin-type semiconductor region (13) formed on a substrate (11); a gate insulating film (14) formed so as to cover an upper surface and both side surfaces of a predetermined portion of the fin-type semiconductor region (13); a gate electrode (15) formed on the gate insulating film (14); and an impurity region (17) formed on both sides of the gate electrode (15) in the fin-type semiconductor region (13). An impurity blocking portion (15a) for blocking the introduction of impurities is provided adjacent both sides of the gate electrode (15) over an upper surface of the fin-type semiconductor region (13).

Abstract: In a plasma doping device according to the invention, a vacuum chamber (1) is evacuated with a turbo-molecular pump (3) as an exhaust device via a exhaust port 11 while a predetermined gas is being introduced from a gas supply device (2) in order to maintain the inside of the vacuum chamber (1) to a predetermined pressure with a pressure regulating valve (4). A high-frequency power of 13.56 MHz is supplied by a high-frequency power source (5) to a coil (8) provided in the vicinity of a dielectric window (7) opposed to a sample electrode (6) to generate inductive-coupling plasma in the vacuum chamber (1). A high-frequency power source (10) for supplying a high-frequency power to the sample electrode (6) is provided. Uniformity of processing is enhanced by driving a gate shutter (18) and covering a through gate (16).

Abstract: A plasma doping method and apparatus in which a prescribed gas is introduced into a vacuum container while being exhausted by a turbomolecular pump as an exhaust apparatus. The pressure in the vacuum container is kept at a prescribed value by a pressure regulating valve. High-frequency electric power of 13.56 MHz is supplied to a coil disposed close to a dielectric window which is opposed to a sample electrode, whereby induction-coupled plasma is generated in the vacuum container. Every time a prescribed number of samples have been processed, a dummy sample is subjected to plasma doping and then to heating. The conditions for processing of a sample are controlled so that the measurement value of the surface sheet resistance becomes equal to a prescribed value, whereby the controllability of the impurity concentration can be increased.

Abstract: An impurity is introduced into a fin-type semiconductor region (102) formed on a substrate (100) using a plasma doping process, thereby forming an impurity-introduced layer (105). Carbon is introduced into the fin-type semiconductor region (102) using a plasma doping process to overlap at least a part of the impurity-introduced layer (105), thereby forming a carbon-introduced layer.

Abstract: A fin-type semiconductor region (103) is formed on a substrate (101), and then a resist pattern (105) is formed on the substrate (101). An impurity is implanted into the fin-type semiconductor region (103) by a plasma doping process using the resist pattern (105) as a mask, and then at least a side of the fin-type semiconductor region (103) is covered with a protective film (107). Thereafter, the resist pattern (105) is removed by cleaning using a chemical solution, and then the impurity implanted into the fin-type semiconductor region (103) is activated by heat treatment.

Abstract: It is intended to provide a plasma doping method and apparatus which are superior in the controllability of the concentration of an impurity that is introduced into a surface layer of a sample. A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided. Every time a prescribed number of samples have been processed, a dummy sample is subjected to plasma doping and then to heating.

Abstract: A fin-type semiconductor region (103) is formed on a substrate (101), and then a resist pattern (105) is formed on the substrate (101). An impurity is implanted into the fin-type semiconductor region (103) by a plasma doping process using the resist pattern (105) as a mask, and then at least a side of the fin-type semiconductor region (103) is covered with a protective film (107). Thereafter, the resist pattern (105) is removed by cleaning using a chemical solution, and then the impurity implanted into the fin-type semiconductor region (103) is activated by heat treatment.

Abstract: A semiconductor region having an upper surface and a side surface is formed on a substrate. A first impurity region is formed in an upper portion of the semiconductor region. A second impurity region is formed in a side portion of the semiconductor region. The resistivity of the second impurity region is substantially equal to or smaller than that of the first impurity region.