Abstract: An object of the invention is to provide a plasma doping method excellent in the uniformity of concentration of impurities introduced into the surface of a sample and a plasma processing device capable of uniformly performing plasma processing of a sample. In a plasma doping device according to the invention, a vacuum chamber (1) is evacuated with a turbo-molecular pump (3) as an exhaust device via a exhaust port 11 while a predetermined gas is being introduced from a gas supply device (2) in order to maintain the inside of the vacuum chamber (1) to a predetermined pressure with a pressure regulating valve (4). A high-frequency power of 13.56 MHz is supplied by a high-frequency power source (5) to a coil (8) provided in the vicinity of a dielectric window (7) opposed to a sample electrode (6) to generate inductive-coupling plasma in the vacuum chamber (1). A high-frequency power source (10) for supplying a high-frequency power to the sample electrode (6) is provided.

Abstract: A method for performing plasma doping which is high in uniformity. A prescribed gas is introduced into a vacuum container from gas supply apparatus while being exhausted through an exhaust hole by a turbomolecular pump as an exhaust apparatus. The pressure in the vacuum container is kept at a prescribed value by a pressure regulating valve. High-frequency power of 13.56 MHz is supplied from a high-frequency power source to a coil which is disposed close to a dielectric window which is opposed to a sample electrode, whereby induction-coupled plasma is generated in the vacuum container. The dielectric window is composed of plural dielectric plates, and grooves are formed in at least one surface of at least two dielectric plates opposed to each other. Gas passages are formed by the grooves and a flat surface(s) opposed to the grooves, and gas flow-out holes which are formed in the dielectric plate that is closest to the sample electrode communicate with the grooves inside the dielectric window.

Abstract: An object of the invention is to provide a method and an apparatus for plasma processing which can accurately monitor an ion current applied to the surface of a sample. Predetermined gas is exhausted via an exhaust port 11 by a turbo-molecular pump 3 while introducing the gas within the vacuum chamber 1 from a gas supply device 2, and the pressure within the vacuum chamber 1 is kept at a predetermined value by a pressure regulating valve 4. A high-frequency power supply 5 for a plasma source supplies a high-frequency power to a coil 8 provided near a dielectric window 7 to generate inductively coupled plasma within the vacuum chamber 1. A high-frequency power supply 10 for the sample electrode for supplying the high-frequency power to the sample electrode 6 is provided. A matching circuit 13 for the sample electrode and a high-frequency sensor 14 are provided between the sample electrode high-frequency power supply and the sample electrode 6.

Abstract: Gas supplied to gas flow passages of a top plate from a gas supply device by gas supply lines forms flow along a vertical direction along a central axis of a substrate, so that the gas blown from gas blow holes can be made to be uniform, and a sheet resistance distribution is rotationally symmetric around a substrate center.

Abstract: There are provided a plasma doping method and apparatus which is excellent in a repeatability and a controllability of an implanting depth of an impurity to be introduced into a sample or a depth of an amorphous layer. A plasma doping method of generating a plasma in a vacuum chamber and colliding an ion in the plasma with a surface of a sample to modify a surface of a crystal sample to be amorphous, includes the steps of carrying out a plasma irradiation over a dummy sample to perform an amorphizing treatment together with a predetermined number of samples, irradiating a light on a surface of the dummy sample subjected to the plasma irradiation, thereby measuring an optical characteristic of the surface of the dummy sample, and controlling a condition for treating the sample in such a manner that the optical characteristic obtained at the measuring step has a desirable value.

Abstract: A semiconductor device includes: a first semiconductor region formed on a substrate and having an upper surface and a side surface; a first impurity region of a first conductivity type formed in an upper portion of the first semiconductor region; a second impurity region of a first conductivity type formed in a side portion of the first semiconductor region; and a gate insulating film formed so as to cover at least a side surface and an upper corner of a predetermined portion of the first semiconductor region. A radius of curvature r? of an upper corner of a portion of the first semiconductor region located outside the gate insulating film is greater than a radius of curvature r of an upper corner of a portion of the first semiconductor region located under the gate insulating film and is less than or equal to 2r.

Abstract: A plasma doping method that can control a dose precisely is realized. In-plane uniformity of the dose is improved. It has been found that, if a bias is applied by irradiating B2H6/He plasma onto a silicon substrate, there is a time at which a dose of boron is made substantially uniform, and the saturation time is comparatively long and ease to stably use, compared with a time at which repeatability of an apparatus control can be secured. The invention has been finalized focusing on the result. That is, if plasma irradiation starts, a dose is initially increased, but a time at which the dose is made substantially uniform without depending on a time variation is continued. In addition, if the time is further increased, the dose is decreased. The dose can be accurately controlled through a process window of the time at which the dose is made substantially uniform without depending on the time variation.

Abstract: A semiconductor region having an upper surface and a side surface is formed on a substrate. A first impurity region is formed in an upper portion of the semiconductor region. A second impurity region is formed in a side portion of the semiconductor region. The resistivity of the second impurity region is substantially equal to or smaller than that of the first impurity region.

Abstract: To provide an impurity introducing method which can repeatedly carry out such a process that plasma irradiation for realization of amorphous and plasma doping were combined, in such a situation that steps are simple and through-put is high, without destroying an apparatus. At the time of switching over plasmas which are used in plasma irradiation for realization of amorphous and plasma doping, electric discharge is stopped, and an initial condition of a matching point of a high frequency power supply and a peripheral circuit is reset so as to adapt to plasma which is used in each step, or at the time of switching, a load, which is applied to the high frequency power supply etc., is reduced by increasing pressure and decreasing a bias voltage.

Abstract: It is intended to provide a plasma processing method and apparatus capable of increasing the uniformity of amorphyzation processing. A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 through a gas inlet 11 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus through an exhaust hole 12. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided and functions as a voltage source for controlling the potential of the sample electrode 6.

Abstract: There are provided a plasma doping method and an apparatus which have excellent reproducibility of the concentration of impurities implanted into the surfaces of samples. In a vacuum container, in a state where gas is ejected toward a substrate placed on a sample electrode through gas ejection holes provided in a counter electrode, gas is exhausted from the vacuum container through a turbo molecular pump as an exhaust device, and the inside of the vacuum container is maintained at a predetermined pressure through a pressure adjustment valve, the distance between the counter electrode and the sample electrode is set to be sufficiently small with respect to the area of the counter electrode to prevent plasma from being diffused outward, and capacitive-coupled plasma is generated between the counter electrode and the sample electrode to perform plasma doping. The gas used herein is a gas with a low concentration which contains impurities such as diborane or phosphine.

Abstract: There is provided a method of introducing impurity capable of efficiently realizing a shallow impurity introduction. The impurity introducing method includes a first step of making a surface of a semiconductor layer to be amorphous by reacting plasma composed of particles which are electrically inactive in the semiconductor layer to a surface of a solid base body including the semiconductor layer, and a second step of introducing impurity to the surface of the solid base body. After performing the first step, by performing the second step, an amorphous layer with fine pores is formed on the surface of the solid base body including the semiconductor layer, and impurity are introduced in the amorphous layer to form an impurity introducing layer.

Abstract: A plasma doping method that can control a dose precisely is realized. In-plane uniformity of the dose is improved. It has been found that, if a bias is applied by irradiating B2H6/He plasma onto a silicon substrate, there is a time at which a dose of boron is made substantially uniform, and the saturation time is comparatively long and ease to stably use, compared with a time at which repeatability of an apparatus control can be secured. The invention has been finalized focusing on the result. That is, if plasma irradiation starts, a dose is initially increased, but a time at which the dose is made substantially uniform without depending on a time variation is continued. In addition, if the time is further increased, the dose is decreased. The dose can be accurately controlled through a process window of the time at which the dose is made substantially uniform without depending on the time variation.

Abstract: A semiconductor region having an upper surface and a side surface is formed on a substrate. A first impurity region is formed in an upper portion of the semiconductor region. A second impurity region is formed in a side portion of the semiconductor region. The resistivity of the second impurity region is substantially equal to or smaller than that of the first impurity region.

Abstract: To provide an impurity introducing method which can repeatedly carry out such a process that plasma irradiation for realization of amorphous and plasma doping were combined, in such a situation that steps are simple and through-put is high, without destroying an apparatus. At the time of switching over plasmas which are used in plasma irradiation for realization of amorphous and plasma doping, electric discharge is stopped, and an initial condition of a matching point of a high frequency power supply and a peripheral circuit is reset so as to adapt to plasma which is used in each step, or at the time of switching, a load, which is applied to the high frequency power supply etc., is reduced by increasing pressure and decreasing a bias voltage.

Abstract: A plasma doping method, even though a plasma doping treatment is repeated, can make a dose from a film to a silicon substrate uniform for each time. The method includes preparing a vacuum chamber having a film containing an impurity formed on an inner wall thereof such that, when the film is attacked by ions in plasma, the amount of an impurity to be doped into the surface of a sample by sputtering is not changed even though the plasma containing the impurity ions is repeatedly generated in the vacuum chamber; placing the sample on the sample electrode; and irradiating the plasma containing the impurity ions so as to implant the impurity ions into the sample, and doping the impurity into the sample by sputtering from the film containing the impurity fixed to the inner wall of the vacuum chamber.

Abstract: A plasma doping method that can control a dose precisely is realized. In-plane uniformity of the dose is improved. It has been found that, if a bias is applied by irradiating B2H6/He plasma onto a silicon substrate, there is a time at which a dose of boron is made substantially uniform, and the saturation time is comparatively long and ease to stably use, compared with a time at which repeatability of an apparatus control can be secured. The invention has been finalized focusing on the result. That is, if plasma irradiation starts, a dose is initially increased, but a time at which the dose is made substantially uniform without depending on a time variation is continued. In addition, if the time is further increased, the dose is decreased. The dose can be accurately controlled through a process window of the time at which the dose is made substantially uniform without depending on the time variation.

Abstract: A plasma doping method, even though a plasma doping treatment is repeated, can make a dose from a film to a silicon substrate uniform for each time. The method includes preparing a vacuum chamber having a film containing an impurity formed on an inner wall thereof such that, when the film is attacked by ions in plasma, the amount of an impurity to be doped into the surface of a sample by sputtering is not changed even though the plasma containing the impurity ions is repeatedly generated in the vacuum chamber; placing the sample on the sample electrode; and irradiating the plasma containing the impurity ions so as to implant the impurity ions into the sample, and doping the impurity into the sample by sputtering from the film containing the impurity fixed to the inner wall of the vacuum chamber.

Abstract: The invention provides a method of doping impurities that includes a step of doping impurities in a solid base substance by using a plasma doping method, a step of forming a light antireflection layer that functions to reduce light reflection on the surface of the solid base substance, and a step of performing annealing by light radiation. According to the method, it is possible to reduce the reflectance of light radiated during annealing, to efficiently apply energy an impurity doped layer, to improve activation efficiency, to prevent diffusion, and to reduce sheet resistance of the impurity doped layer.

Abstract: An object is to provide a semiconductor device in which uniform properties are intended and high yields are provided. Process steps are provided in which variations are adjusted in doping and annealing process steps that are subsequent process steps so as to cancel in-plane variations in a substrate caused by dry etching to finally as well provide excellent in-plane consistency in a substrate.