Abstract: An SERS unit includes a support 10 that includes a cavity 11 provided with an opening 12, an optical functional portion 20 that is disposed in the cavity 11 to face the opening 12 and causes surface enhanced Raman scattering, and a package 5 that accommodates the support 10 and is evacuated. The package 5 is in contact with at least an edge 12a of the opening 12, and is bent toward the optical functional portion 20 in a state in which the package 5 is spaced apart from the optical functional portion 20 in the opening 12.

Abstract: A light detection device includes: a Fabry-Perot interference filter provided with a light transmission region; a light detector configured to detect light transmitted through the light transmission region; a package having an opening and accommodating the Fabry-Perot interference filter and the light detector; and a light transmitting unit arranged on an inner surface of the package so as to close an opening, the light transmitting unit including a band pass filter configured to transmit light incident on the light transmission region. When viewed from a direction parallel to the line, an outer edge of the Fabry-Perot interference filter is positioned outside an outer edge of the opening, and an outer edge of the light transmitting unit is positioned outside the outer edge of the Fabry-Perot interference filter.

Abstract: A method of manufacturing a Fabry-Perot interference filter includes a forming step of forming a first mirror layer having a plurality of first mirror portions, a sacrificial layer having a plurality of portions expected to be removed, and a second mirror layer having a plurality of second mirror portions on a first main surface of a wafer which includes parts corresponding to a plurality of two-dimensionally arranged substrates and is expected to be cut into the plurality of substrates along each of a plurality of lines; a removing step of simultaneously removing the plurality of two-dimensionally arranged portions expected to be removed from the sacrificial layer through etching after the Ruining step; and a cutting step of cutting the wafer into the plurality of substrates along each of the plurality of lines after the removing step.

Abstract: An optical module 1A includes a mirror unit 2 including a movable mirror 22 and a fixed mirror 16, a beam splitter unit 3, a light incident unit 4, a first light detector 6, a second light source 7, a second light detector 8, a holding unit 130, a first mirror 51, a second mirror 52, and a third mirror 53. The holding unit 130 holds the first light detector 6, the second light detector 8, and the second light source 7 so as to face that same side, and to be aligned in this order. A length of an optical path between the unit 3 and the detector 6 is shorter than a length of an optical path between the unit 3 and the detector 8, and a length of an optical path between the unit 3 and the source 7.

Abstract: In an optical device, a base and a movable unit are constituted by a semiconductor substrate including a first semiconductor layer, an insulating layer, and a second semiconductor layer in this order from one side in a predetermined direction. The base is constituted by the first semiconductor layer, the insulating layer, and the second semiconductor layer. The movable unit includes an arrangement portion that is constituted by the second semiconductor layer. The optical function unit is disposed on a surface of the arrangement portion on the one side. The first semiconductor layer that constitutes the base is thicker than the second semiconductor layer that constitutes the base. A surface of the base on the one side is located more to the one side than the optical function unit.

Abstract: A mirror unit 2 includes a mirror device 20 including a base 21 and a movable mirror 22, an optical function member 13, and a fixed mirror 16 that is disposed on a side opposite to the mirror device 20 with respect to the optical function member 13. The optical function member 13 is provided with a light transmitting portion 14 that constitutes a part of an optical path between the beam splitter unit 3 and the fixed mirror 16. The light transmitting portion 14 is a portion that corrects an optical path difference that occurs between an optical path between the beam splitter unit 3 and the movable mirror 22 and the optical path between the beam splitter unit 3 and the fixed mirror 16. The second surface 21b of the base 21 and the third surface 13a of the optical function member 13 are joined to each other.

Abstract: A light detector includes: a support substrate; a light transmission substrate which forms an accommodation space along with the support substrate; a light detection element which is located in the accommodation space and includes a bolometer layer; a first base layer which includes a first corner portion; a second base layer which includes a second corner portion; a solder layer which is disposed between the first base layer and the second base layer, fixes the support substrate and the light transmission substrate to each other, and air-tightly seals the accommodation space; and a reinforcement portion which is integrally formed with the solder layer by the same material as that of the solder layer, in which the reinforcement portion reaches at least one of the first surface side and the second surface side inside the first corner portion and the second corner portion.

Abstract: An optical filter system includes a Fabry-Perot interference filter, and a controller that controls the Fabry-Perot interference filter. The Fabry-Perot interference filter includes a first mirror portion, a second mirror portion, a first driving electrode and a first monitor electrode provided with the first mirror portion, and a second driving electrode and a second monitor electrode provided with the second mirror portion. The controller includes a control unit that calculates an electrostatic capacitance between the first mirror portion and the second mirror portion based on an alternating voltage generated between the first monitor electrode and the second monitor electrode while an alternating current is applied between the first monitor electrode and the second monitor electrode.

Abstract: A method of manufacturing a semiconductor device includes a first process in which a first wiring 3 is provided on a first surface 2a of a semiconductor substrate 2; a second process in which a light transmitting substrate 5 is attached to the first surface 2a; a third process in which the semiconductor substrate 2 is thinned so that the thickness of the semiconductor substrate 2 is smaller than the thickness of the light transmitting substrate 5; a fourth process in which a through hole 7 is formed in the semiconductor substrate 2; a fifth process in which a dip coating method is performed using a first resin material and thus a resin insulating layer 10 is provided; a sixth process in which a contact hole 16 is formed in the resin insulating layer 10; and a seventh process in which a second wiring 8 is provided on a surface 10b of the resin insulating layer 10, and the first wiring 3 and the second wiring 8 are electrically connected via a contact hole 16.

Abstract: A semiconductor device includes a semiconductor substrate in which a through hole is formed, a first wiring, an insulating layer, and a second wiring that is electrically connected to the first wiring in an opening of the insulating layer. The insulating layer has a first curved portion that covers an inner surface of a through hole between a first opening and a second opening and a second curved portion that covers an edge of the second opening. A surface in the first curved portion is curved in a convex shape toward the side opposite the inner surface of the through hole. The surface in the second curved portion is curved in a convex shape toward the side opposite the inner surface of the through hole.