Abstract: A surface emitting laser element includes a first reflecting mirror; an active layer over the first reflecting mirror; a second reflecting mirror over the active layer; and a multilayer film over the second reflecting mirror. The multilayer film has a side surface including one film and inclined with respect to a principal surface of the second reflecting mirror. The multilayer film includes, in a thickness direction, two or more pairs of a first film having a first refractive index and a second film having a second refractive index higher than the first refractive index. The multilayer film has a center portion and a peripheral portion around the center portion in plan view in a direction perpendicular to the principal surface. The peripheral portion includes the side surface.

Abstract: A surface emitting laser element includes a first reflecting mirror; an active layer over the first reflecting mirror; a second reflecting mirror over the active layer; and a multilayer film over the second reflecting mirror. The multilayer film has a side surface including one film and inclined with respect to a principal surface of the second reflecting mirror. The multilayer film includes, in a thickness direction, two or more pairs of a first film having a first refractive index and a second film having a second refractive index higher than the first refractive index. The multilayer film has a center portion and a peripheral portion around the center portion in plan view in a direction perpendicular to the principal surface. The peripheral portion includes the side surface.

Abstract: A surface emitting laser includes a substrate, a plurality of surface emitting laser elements on a first surface of the substrate, a first electrode electrically connected to a first conductive semiconductor of the surface emitting laser elements; and a second electrode electrically connected to a second conductive semiconductor of the surface emitting laser elements. Each of the surface emitting laser elements includes a first reflecting mirror on the substrate; an active layer on the first reflecting mirror; and a second reflecting mirror on the active layer. When a first contact region in which the first electrode and the first conductive semiconductor are connected to each other is on the first surface or in the first conductive semiconductor of the surface emitting laser elements. The first electrode is electrically connected to the light emitting units. The second electrode is electrically connected to each of the light emitting units.

Abstract: A surface-emitting laser array and a laser device including the surface-emitting laser array. The surface-emitting laser array includes a layered product including a lower reflecting mirror having two layers with different refractive indexes, an upper reflecting mirror, and an active layer disposed between the lower reflecting mirror and the upper reflecting mirror, a first separation trench from which the upper reflecting mirror, the active layer, and the lower reflecting mirror are removed, the first separation trench separating the surface-emitting laser array from an adjacent chip, and a second separation trench disposed between the first separation trench and a light-emitting unit that emits a laser beam, the second separation trench having a prescribed depth.

Abstract: A surface-emitting laser device includes a transparent dielectric layer provided in an emitting region and configured to cause a reflectance at a peripheral part to be different from a reflectance at a central part in the emitting region. In the surface-emitting laser device, the thickness of a contact layer is different between a region having a relatively high reflectance and a region having a relatively low reflectance in the emitting region. The contact layer is provided on the high refractive index layer of an upper multilayer film reflecting mirror, and the total optical thickness of the high refractive index layer and the contact layer in the region having the relatively low reflectance is deviated from an odd number multiple of a one quarter oscillation wavelength of laser light emitted from the emitting region.

Abstract: A surface emitting laser array element is disclosed that includes a lower distributed bragg reflector (DBR) that is formed on a substrate, an active layer that is formed on the lower DBR, and an upper DBR that is formed on the active layer. A mesa and a dummy mesa that is arranged at a periphery of the mesa are created by removing a portion of the upper DBR. The mesa forms a surface emitting laser, and a wiring is connected to an electrode that is formed on an upper face of the mesa. The wiring includes a portion that is arranged over an upper face of the dummy mesa, a side face of the dummy mesa, and a bottom face at a peripheral region of the dummy mesa extending along a longitudinal direction of the wiring.

Abstract: A surface-emitting laser device includes a transparent dielectric layer provided in an emitting region and configured to cause a reflectance at a peripheral part to be different from a reflectance at a central part in the emitting region. In the surface-emitting laser device, the thickness of a contact layer is different between a region having a relatively high reflectance and a region having a relatively low reflectance in the emitting region. The contact layer is provided on the high refractive index layer of an upper multilayer film reflecting mirror, and the total optical thickness of the high refractive index layer and the contact layer in the region having the relatively low reflectance is deviated from an odd number multiple of a one quarter oscillation wavelength of laser light emitted from the emitting region.

Abstract: A surface-emitting laser device includes a transparent dielectric layer provided in an emitting region and configured to cause a reflectance at a peripheral part to be different from a reflectance at a central part in the emitting region. In the surface-emitting laser device, the thickness of a contact layer is different between a region having a relatively high reflectance and a region having a relatively low reflectance in the emitting region. The contact layer is provided on the high refractive index layer of an upper multilayer film reflecting mirror, and the total optical thickness of the high refractive index layer and the contact layer in the region having the relatively low reflectance is deviated from an odd number multiple of a one quarter oscillation wavelength of laser light emitted from the emitting region.

Abstract: A disclosed vertical cavity surface emitting laser element includes a substrate, a laminated body sandwiching a semiconductor active layer with an upper reflecting mirror and a lower reflecting mirror, a lower electrode, and an upper electrode. The laser element emits laser light in a direction perpendicular to the surface of the substrate when an electric current is supplied between the upper electrode and the lower electrode. The laser element further includes a selective oxidation layer in the upper reflecting mirror having a current blocking structure made of an oxidized region and an unoxidized region, and a detectable portion formed on a side surface of a mesa structure shaped by the upper reflecting mirror including the selective oxidation layer and the active layer, thereby enabling detecting the position of the selective oxidation layer from a top of the laminated body in a depth direction of the laminated body.

Abstract: A surface emitting laser array element is disclosed that includes a lower distributed bragg reflector (DBR) that is formed on a substrate, an active layer that is formed on the lower DBR, and an upper DBR that is formed on the active layer. A mesa and a dummy mesa that is arranged at a periphery of the mesa are created by removing a portion of the upper DBR. The mesa forms a surface emitting laser, and a wiring is connected to an electrode that is formed on an upper face of the mesa. The wiring includes a portion that is arranged over an upper face of the dummy mesa, a side face of the dummy mesa, and a bottom face at a peripheral region of the dummy mesa extending along a longitudinal direction of the wiring.

Abstract: A surface-emitting laser device includes a transparent dielectric layer provided in an emitting region and configured to cause a reflectance at a peripheral part to be different from a reflectance at a central part in the emitting region. In the surface-emitting laser device, the thickness of a contact layer is different between a region having a relatively high reflectance and a region having a relatively low reflectance in the emitting region. The contact layer is provided on the high refractive index layer of an upper multilayer film reflecting mirror, and the total optical thickness of the high refractive index layer and the contact layer in the region having the relatively low reflectance is deviated from an odd number multiple of a one quarter oscillation wavelength of laser light emitted from the emitting region.

Abstract: A surface-emitting laser element includes a substrate; a plurality of semiconductor layers laminated on the substrate, the plural semiconductor layers including a resonator structural body including an active layer and semiconductor multilayer film reflection mirrors having the resonator structural body sandwiched therebetween; an electrode provided in such a manner as to surround a emitting region on a surface of the surface-emitting laser element from which light is emitted; and a dielectric film provided in the emitting region such that a reflection ratio of a peripheral part of the emitting region is different from a reflection ratio of a center part of the emitting region. Edge portions that are near edges of the dielectric film are tilted with respect to the surface.

Abstract: A disclosed vertical cavity surface emitting laser element includes a substrate, a laminated body sandwiching a semiconductor active layer with an upper reflecting mirror and a lower reflecting mirror, a lower electrode, and an upper electrode. The laser element emits laser light in a direction perpendicular to the surface of the substrate when an electric current is supplied between the upper electrode and the lower electrode. The laser element further includes a selective oxidation layer in the upper reflecting mirror having a current blocking structure made of an oxidized region and an unoxidized region, and a detectable portion formed on a side surface of a mesa structure shaped by the upper reflecting mirror including the selective oxidation layer and the active layer, thereby enabling detecting the position of the selective oxidation layer from a top of the laminated body in a depth direction of the laminated body.

Abstract: The present invention provides a process for producing inexpensively and effectively a stamper utilized for producing multi-valued ROM discs, which comprises: (i) irradiating a light onto a laminate, thereby producing reacted portions within a thermo reactive layer, (ii) maintaining the reacted portions, which are produced by irradiating the light, within the thermo reactive layer, (iii) maintaining an optical absorption layer under the reacted portions, (iv) maintaining a substrate under the reacted portions, and (v) removing the maintained optical absorption layer and the maintained thermo reactive layer, wherein the laminate comprises the optical absorption layer and the thermo reactive layer on the substrate, the optical absorption layer and the thermo reactive layer are disposed adjacently.

Abstract: A surface-emitting laser element includes a substrate; a plurality of semiconductor layers laminated on the substrate, the plural semiconductor layers including a resonator structural body including an active layer and semiconductor multilayer film reflection mirrors having the resonator structural body sandwiched therebetween; an electrode provided in such a manner as to surround a emitting region on a surface of the surface-emitting laser element from which light is emitted; and a dielectric film provided in the emitting region such that a reflection ratio of a peripheral part of the emitting region is different from a reflection ratio of a center part of the emitting region. Edge portions that are near edges of the dielectric film are tilted with respect to the surface.

Abstract: It is an object of the present invention to provide an optical recording medium containing a substrate, and a reflective layer, a second dielectric layer, a recording layer and a first dielectric layer which are disposed over the substrate in this order, wherein the recording layer contains a phase-change recording material containing any one of GeSbSnMn and GeSbSnMnGa, and the second dielectric layer contains an oxide of two or more elements of Nb, Si and Ta.

Abstract: An optical recording medium which comprises a phase-change recording layer utilizing optical constants associated with a reversible-phase-change induced by laser beam irradiation between an amorphous phase and a crystalline phase. The phase-change recording layer comprises Ge, Sb, Sn, Mn, and X. X represents at least one element selected from In, Bi, Te, Ag, Al, Zn, Co, Ni, and Cu. When the relation of respective contents thereof is represented by Ge?Sb?Sn?Mn?X?, elements of ?, ?, ?, ?, and ? respectively satisfy the following numerical expressions: 5???25, 45???75, 10???30, 0.5???20, and 0???15 (atomic %) when ?+?+?+?+?=100), and the total content of of Ge, Sb, Sn, Mn, and X is 95 atomic % of the entire content of the phase-change recording layer.

Abstract: In an optical disk substrate film-formation apparatus which prepared an optical disk by forming a thin film on a substrate, the optical disk substrate is held by a holder section. A contact support surface is provided to the holder section which closely contacts at least a portion of the surface of the optical disk substrate rear to the surface where the think film is formed.

Abstract: The present invention provides a process for producing inexpensively and effectively a stamper utilized for producing multi-valued ROM discs, which comprises: (i) irradiating a light onto a laminate, thereby producing reacted portions within a thermo reactive layer, (ii) maintaining the reacted portions, which are produced by irradiating the light, within the thermo reactive layer, (iii) maintaining an optical absorption layer under the reacted portions, (iv) maintaining a substrate under the reacted portions, and (v) removing the maintained optical absorption layer and the maintained thermo reactive layer, wherein the laminate comprises the optical absorption layer and the thermo reactive layer on the substrate, the optical absorption layer and the thermo reactive layer are disposed adjacently.

Abstract: In an optical disk substrate film-formation apparatus which prepared an optical disk by forming a thin film on a substrate, the optical disk substrate is held by a holder section. A contact support surface is provided to the holder section which closely contacts at least a portion of the surface of the optical disk substrate rear to the surface where the think film is formed.