Abstract: In an optical disk substrate film-formation apparatus which prepared an optical disk by forming a thin film on a substrate, the optical disk substrate is held by a holder section. A contact support surface is provided to the holder section which closely contacts at least a portion of the surface of the optical disk substrate rear to the surface where the think film is formed.

Abstract: In an optical disk substrate film-formation apparatus which prepared an optical disk by forming a thin film on a substrate, the optical disk substrate is held by a holder section. A contact support surface is provided to the holder section which closely contacts at least a portion of the surface of the optical disk substrate rear to the surface where the think film is formed.

Abstract: An optical information recording medium having a substrate, a first dielectric layer provided on the substrate, a recording layer provided on the first dielectric layer, a second dielectric layer provided on the recording layer, a light reflection and heat dissipation layer provided on the light reflection and heat dissipation layer, and a crystallization accelerating layer provided in contact with at least a portion of the recording layer and made of a material including a substance selected from Bi, Bi-containing compounds, Al, Al-containing compounds, In, In-containing compounds, Tl and Tl-containing compounds.

Abstract: A phase-change recording medium with Sb3Te compounds which are formed by initialization-less process steps is provided through the formation of recording media having layered structure including suitably selected materials together with methods for fabricating such recording media, thereby leading to DVD-ROM compatible recording media capable of achieving recording density of 2.6 GB or more on a disc of 120 mm in diameter. The recording medium includes an Sb3Te recording layer and a crystallization accelerating layer formed contiguously with the recording layer. The crystallization accelerating layer is formed to suitably include impurities as record stabilization agents. At least one additional impurity layer may be formed contiguous to said recording and/or crystallization accelerating layer.

Abstract: A method for forming ohmic contact has the steps of a) a process for forming an insulating film having a predetermined thickness on a diffusive layer formed on a semiconductor substrate; b) a process for forming a mask on the insulating film; the mask having a small selective ratio with respect to the insulating film and having an opening portion for a contact hole; c) a process for implanting ions into the diffusive layer through the opening portion; d) a process for taking heat treatment to electrically activate the implanted ions; e) a process for completely removing the mask and forming the contact hole by simultaneously etching the mask and the insulating film exposed through the opening portion of the mask; and f) a process for making an electrode come in ohmic contact with the semiconductor substrate exposed from the formed contact hole. In this method, the ohmic contact is formed with high accuracy with respect to a fine contact hole.

Abstract: A method of fabricating a semiconductor device includes the steps of forming a contact hole in an insulator layer, filling the contact hole by a conductor material, removing the conductor material from the upper major surface of the insulator layer to form a conductive plug such that the conductive plug fills the contact hole, applying an anisotropic etching process upon the insulator layer, such that the anisotropic etching process acts substantially vertically and selectively to the insulator layer, with an etching rate substantially larger than an etching rate for the conducive plug.

Abstract: In a manufacturing method of a semiconductor device, a gate insulating film is grown in an active region. Thereafter, an N-type polysilicon film is formed on the gate insulating film and is patterned so that a gate electrode and a polysilicon electrode are formed. Next, arsenic ions are implanted onto entire faces of the gate and polysilicon electrodes so that a source-drain region is formed on a substrate. An interlayer insulating film is then formed on an entire face of the source-drain region, etc. Thereafter, a contact hole is formed on a drain region in a position in which the drain region partially overlaps the polysilicon electrode. A surface portion of the polysilicon electrode is exposed into the contact hole. Thereafter, phosphoric ions are implanted through the contact hole with the interlayer insulating film as a mask. The implanted ions are thermally processed to activate these implanted ions. Thereafter, metal wiring is formed.

Abstract: A semiconductor integrated circuit device includes a substrate formed with semiconductor elements and a metal wiring having a laminated structure and provided on the substrate. The metal wiring includes a first layer including aluminum as a main component, and a second layer formed on the first layer. The second layer includes titanium and nitrogen as main components. The second layer includes more titanium than nitrogen in number of atoms. A third layer may be formed between the first and second layers. The third layer includes a compound of aluminum and titanium as a main component. A fourth layer may further be formed between the second and third layers. The fourth layer includes titanium as a main component and is free of aluminum.

Abstract: A polycrystal silicon electrode and a side wall are formed in a method for manufacturing a semiconductor device. Thereafter, air is exhausted from a film forming chamber until a vacuum degree of 4.times.10.sup.-8 Torr. A mixing gas of N.sub.2 and argon (At) is introduced into this chamber with 60 sccm and a pressure within the chamber is set to 2.0 mTorr. A percentage of N.sub.2 to argon (Ar) in this mixing gas atmosphere is set to 10%. Direct current power 6 kW is applied to a titanium target having 99.998% in purity and 12 inches in length so that the titanium target is sputtered and formed as a titanium film including nitrogen. The titanium film is processed rapidly and thermally for 30 seconds at a temperature of 750 .degree. C. by using a xenon (Xe) arc lamp. Thus, a silicide film is uniformly formed selectively on a silicon substrate and the polycrystal silicon electrode.