Abstract: A method for manufacturing a semiconductor device including: forming a resist film 11 on a film to be processed 32; baking the resist film 11; performing immersion exposure on the resist film 11 after the baking; performing post exposure bake on the resist film 11 after performing the immersion exposure; developing the resist film 11 after performing the post exposure bake; and after the post exposure bake is performed on the resist film 11, removing an edge 15 of the resist film 11, the edge not being exposed.

Abstract: A voltage having the positive polarity and a voltage having the negative polarity are alternately applied to a pixel between a counter electrode and a pixel electrode. A counter electrode voltage (Vcom) generating circuit or a source signal generating section is provided each of which controls effective voltages to be applied to the pixel for an identical tone so that an effective voltage having the positive polarity and an effective voltage having the negative polarity are asymmetrically applied to the pixel for all of the tones which can be displayed. The counter electrode voltage (Vcom) generating circuit or the source signal generating section shifts a counter electrode voltage Vcom-A or a source voltage by 0.3 V or more from a voltage causing the effective voltages to be symmetrically applied to the pixel.

Abstract: A method for manufacturing a semiconductor device including: forming a resist film 11 on a film to be processed 32; baking the resist film 11; performing immersion exposure on the resist film 11 after the baking; performing post exposure bake on the resist film 11 after performing the immersion exposure; developing the resist film 11 after performing the post exposure bake; and after the post exposure bake is performed on the resist film 11, removing an edge 15 of the resist film 11, the edge not being exposed.

Abstract: A method for manufacturing a semiconductor device, includes: supplying a liquid resist containing a water-repellent additive to a surface of a rotating semiconductor wafer fixed to a rotary support to form a resist film to a design thickness on the surface of the semiconductor wafer; spin drying the resist film; bringing a liquid into contact with the resist film and exposing the resist film through the liquid after the spin drying; developing the resist film to form a resist pattern; and performing processing on the semiconductor wafer. A condition for adjusting contact angle between the resist film surface and the liquid is controlled so that the contact angle assumes a desired value, the condition including at least one selected from the group consisting of spin drying time for the resist film, resist temperature during the supplying, pressure of an atmosphere above the semiconductor wafer surface, and humidity of the atmosphere above the semiconductor wafer surface.

Abstract: According to one embodiment, an imprint template includes a base substrate and a resin-based pattern transfer portion. The pattern transfer portion is formed on a major surface of the base substrate and includes a protrusion-depression pattern. A shape of the protrusion-depression pattern is transferred to a transfer target. The protrusion-depression portion is provided at the major surface of the base substrate. A major surface side of the pattern transfer portion is provided so as to fit into a depression of the protrusion-depression portion. In another embodiment, a pattern formation method is disclosed. The method can include providing the transfer target on the substrate, and using the imprint template to bring the pattern into contact with the transfer target. In addition, the method can include curing the transfer target and then releasing the imprint template from the transfer target to transfer the shape of the pattern to the transfer target.

Abstract: A driving circuit according to the present invention for driving a display apparatus based on display data and a control signal includes: a delay circuit for delaying the input control signal; and a data load section for loading the input display data to the display apparatus at a timing generated by the delayed control signal, where the delay circuit delays the control signal in such a manner that load timing at which the display data is loaded to the display apparatus varies according to fixed timing determined by a constant cycle.

Abstract: According to an embodiment, a template surface treatment method includes hydroxylating the surface of a template having an uneven pattern surface or absorbing water onto the surface to distribute OH radicals on the surface, and coupling a coupling agent onto the template surface on which the OH radicals are distributed. These processes are performed in an environment in which amines are controlled to be in a predetermined concentration or less.

Abstract: A loading mechanism (11) has first and second arm members (30, 30) rotated about first and second supporting points (31, 31), a cam mechanism (60) for rotating, by driving force from a drive source (71), at least either of the first and second arm members (30, 30) to hold and feed a disc (12), and a third arm member (80) independently rotated about a third supporting point (81), applying urging force to the disc (12) by an urging means (86) to hold the outer circumferential edge of the disc (12). In the holding and feeding of the disc, the center part of the disc (12) is present inside a figure obtained by connecting adjacent points out of three or more points of contact between the disc (12) and the first to third arm members (30, 30, 80).

Abstract: A method for manufacturing a semiconductor device, includes: supplying a liquid resist containing a water-repellent additive to a surface of a rotating semiconductor wafer fixed to a rotary support to form a resist film to a design thickness on the surface of the semiconductor wafer; spin drying the resist film; bringing a liquid into contact with the resist film and exposing the resist film through the liquid after the spin drying; developing the resist film to form a resist pattern; and performing processing on the semiconductor wafer. A condition for adjusting contact angle between the resist film surface and the liquid is controlled so that the contact angle assumes a desired value, the condition including at least one selected from the group consisting of spin drying time for the resist film, resist temperature during the supplying, pressure of an atmosphere above the semiconductor wafer surface, and humidity of the atmosphere above the semiconductor wafer surface.

Abstract: There is provided a production method in which bis(nitrato)platinum complex, optionally in the concurrent presence of dihalo-platinum complex, and poly(ethylene glycol)-block-poly(glutamic acid) are used at specific ratios and reacted. Coordination compound of an anti-tumor platinum complex with a block copolymer having carboxyl groups on its side chains is efficiently produced.

Abstract: A method for manufacturing a semiconductor device including: forming a resist film 11 on a film to be processed 32; baking the resist film 11; performing immersion exposure on the resist film 11 after the baking; performing post exposure bake on the resist film 11 after performing the immersion exposure; developing the resist film 11 after performing the post exposure bake; and after the post exposure bake is performed on the resist film 11, removing an edge 15 of the resist film 11, the edge not being exposed.

Abstract: A pattern forming method has forming a lower layer film on a film to be processed, forming a silicon-containing intermediate film containing a protecting group which is removed by an acid, on said lower layer film, forming a resist film on said silicon-containing intermediate film, exposing a predetermined region of said resist film to light, and developing said resist film with a developer.

Abstract: A voltage having the positive polarity and a voltage having the negative polarity are alternately applied to a pixel between a counter electrode and a pixel electrode. A counter electrode voltage (Vcom) generating circuit or a source signal generating section is provided each of which controls effective voltages to be applied to the pixel for an identical tone so that an effective voltage having the positive polarity and an effective voltage having the negative polarity are asymmetrically applied to the pixel for all of the tones which can be displayed. The counter electrode voltage (Vcom) generating circuit or the source signal generating section shifts a counter electrode voltage Vcom-A or a source voltage by 0.3 V or more from a voltage causing the effective voltages to be symmetrically applied to the pixel.

Abstract: A loading mechanism (11) has first and second arm members (30, 30) rotated about first and second supporting points (31, 31), a cam mechanism (60) for rotating, by driving force from a drive source (71), at least either of the first and second arm members (30, 30) to hold and feed a disc (12), and a third arm member (80) independently rotated about a third supporting point (81), applying urging force to the disc (12) by an urging means (86) to hold the outer circumferential edge of the disc (12). In the holding and feeding of the disc, the center part of the disc (12) is present inside a figure obtained by connecting adjacent points out of three or more points of contact between the disc (12) and the first to third arm members (30, 30, 80).

Abstract: A pixel charge-discharge circuit charges and discharges a series circuit of a capacitor by alternately connecting two types of auxiliary capacitance wires to a high voltage source and a low voltage source by using four types of switches. The high voltage source and the low voltage source are positive voltage sources, and a potential of the high voltage source is greater than that of the low voltage source. The low voltage source serving as a sink-current-flowing voltage source includes a stored energy adjustment section. The stored energy adjustment section discharges electrostatic energy from the high voltage source by turning ON and OFF two types of switches and causes the electrostatic energy to be balanced by energy supplied from the series circuit.

Abstract: There is provided a production method in which bis(nitrato)platinum complex, optionally in the concurrent presence of dihalo-platinum complex, and poly(ethylene glycol)-block-poly(glutamic acid) are used at specific ratios and reacted. Coordination compound of an anti-tumor platinum complex with a block copolymer having carboxyl groups on its side chains is efficiently produced.

Abstract: The object of the present invention is to provide a pump structure that can reduce a hydraulic force applied to a casing of a multi stage diffuser pump, which includes multiple stages of impellers fixed to a rotary shaft rotatably supported in the casing and multiple stages of guide vane diffusers and return blade passages fixed on the casing in correspondence with the multiple stages of impellers, thereby reducing the vibrations and noises of the pump. In a multi stage diffuser pump of the type which includes multiple stages of impellers fixed to the rotary shaft and multiple stages of guide vane diffusers and return blade passages fixed on circular disks in the casing in correspondence with the multiple stages of impellers, in the impellers of the two stages of front and rear stages, which are equivalent in the form and number of blades, the phases of positions in the peripheral direction of the blades of the impellers of at least one pair of front and rear stages are deviated from each other by 0.

Abstract: A pixel charge-discharge circuit charges and discharges a series circuit of a capacitor by alternately connecting two types of auxiliary capacitance wires to a high voltage source and a low voltage source by using four types of switches. The high voltage source and the low voltage source are positive voltage sources, and a potential of the high voltage source is greater than that of the low voltage source. The low voltage source serving as a sink-current-flowing voltage source includes a stored energy adjustment section. The stored energy adjustment section discharges electrostatic energy from the high voltage source by turning ON and OFF two types of switches and causes the electrostatic energy to be balanced by energy supplied from the series circuit.